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1.发明授权Method of manufacturing a semiconductor device comprising a field stop zone at a specific depth 有权制造半导体器件的方法，该半导体器件包括在特定深度的场阻挡区公开(公告)号：US07754590B2
公开(公告)日：2010-07-13
申请号：US11468372
申请日：2006-08-30
IPC分类号： H01L21/265
CPC分类号： H01L21/26586 , H01L29/66333
摘要： Some embodiments of the invention relate to manufacturing a semiconductor device with an implantation layer on a semiconductor substrate including a method of manufacturing such an implantation layer, wherein said implantation layer is formed in an implantation step at a predetermined depth of penetration, determined from a top surface of said semiconductor substrate, using a particle beam, by increasing its path distance to a main implantation peak and correspondingly increasing the energy level of said particle beam for producing an undamaged implantation layer having a thickness that is increased significantly compared with the thickness of an implantation layer that would be produced at said predetermined depth of penetration using a particle beam with non-increased path distance and energy level.
摘要翻译： 本发明的一些实施例涉及在半导体衬底上制造具有注入层的半导体器件，该半导体器件包括制造这种注入层的方法，其中所述注入层以从顶部确定的预定穿透深度的注入步骤形成 所述半导体衬底的表面使用粒子束，通过增加其到主注入峰的路径距离并相应地增加所述粒子束的能级，用于产生未损坏的注入层，其具有与其厚度相比显着增加的厚度 使用具有非增加的路径距离和能级的粒子束在所述预定的穿透深度下产生的植入层。
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2.发明申请METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING A FIELD STOP ZONE AT A SPECIFIC DEPTH 有权在特定深度制造包含现场停止区的半导体器件的方法公开(公告)号：US20080124902A1
公开(公告)日：2008-05-29
申请号：US11468372
申请日：2006-08-30
IPC分类号： H01L21/265
CPC分类号： H01L21/26586 , H01L29/66333
摘要： Some embodiments of the invention relate to manufacturing a semiconductor device with an implantation layer on a semiconductor substrate including a method of manufacturing such an implantation layer, wherein said implantation layer is formed in an implantation step at a predetermined depth of penetration, determined from a top surface of said semiconductor substrate, using a particle beam, by increasing its path distance to a main implantation peak and correspondingly increasing the energy level of said particle beam for producing an undamaged implantation layer having a thickness that is increased significantly compared with the thickness of an implantation layer that would be produced at said predetermined depth of penetration using a particle beam with non-increased path distance and energy level.
摘要翻译： 本发明的一些实施例涉及在半导体衬底上制造具有注入层的半导体器件，该半导体器件包括制造这种注入层的方法，其中所述注入层以从顶部确定的预定穿透深度的注入步骤形成 所述半导体衬底的表面使用粒子束，通过增加其到主注入峰的路径距离并相应地增加所述粒子束的能级，用于产生未损坏的注入层，其具有与其厚度相比显着增加的厚度 使用具有非增加的路径距离和能级的粒子束在所述预定的穿透深度下产生的植入层。
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公开(公告)号：US10651037B2
公开(公告)日：2020-05-12
申请号：US11232735
申请日：2005-09-22
IPC分类号： H01L21/265 , H01L29/66 , H01L21/304 , H01L29/10 , H01L21/324 , H01L21/263 , H01L29/08
摘要： One embodiment of the invention relates to a method for fabricating a doped semiconductor zone in a semiconductor body. The method includes implanting dopant particles via one side into the semiconductor body or applying a layer containing dopant particles to one side of the semiconductor body. The method also includes irradiating the semiconductor body via the one side with further particles at least in the region containing the dopant particles. The method finally includes carrying out a thermal treatment by means of which the semiconductor body is heated, at least in the region containing the dopant particles, to a predetermined temperature in order to activate the implanted dopant particles, said temperature being less than 700° C.
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公开(公告)号：US08252671B2
公开(公告)日：2012-08-28
申请号：US13186470
申请日：2011-07-20
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaeffer , Franz-Josef Niedernostheide
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaeffer , Franz-Josef Niedernostheide
IPC分类号： H01L21/425
CPC分类号： H01L29/861 , H01L21/263 , H01L21/265 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。
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5.发明授权Semiconductor device with trench structures including a recombination structure and a fill structure 有权具有包括复合结构和填充结构的沟槽结构的半导体器件公开(公告)号：US08921931B2
公开(公告)日：2014-12-30
申请号：US13487540
申请日：2012-06-04
CPC分类号： H01L29/861 , H01L21/761 , H01L21/76224 , H01L29/0619 , H01L29/0649 , H01L29/0692 , H01L29/872
摘要： A semiconductor body of a semiconductor device includes a doped layer of a first conductivity type and one or more doped zones of a second conductivity type. The one or more doped zones are formed between the doped layer and the first surface of a semiconductor body. Trench structures extend from one of the first and the second opposing surface into the semiconductor body. The trench structures are arranged between portions of the semiconductor body which are electrically connected to each other. The trench structures may be arranged for mitigating mechanical stress, locally controlling charge carrier mobility, locally controlling a charge carrier recombination rate and/or shaping buried diffusion zones.
摘要翻译： 半导体器件的半导体本体包括第一导电类型的掺杂层和第二导电类型的一个或多个掺杂区。 一个或多个掺杂区形成在半导体本体的掺杂层和第一表面之间。 沟槽结构从第一和第二相对表面之一延伸到半导体本体中。 沟槽结构布置在彼此电连接的半导体本体的部分之间。 沟槽结构可以被布置用于减轻机械应力，局部地控制电荷载流子迁移率，局部地控制电荷载流子复合速率和/或成形掩埋扩散区。
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公开(公告)号：US20060081923A1
公开(公告)日：2006-04-20
申请号：US11241866
申请日：2005-09-30
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaffer , Franz-Josef Niedernostheide
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaffer , Franz-Josef Niedernostheide
IPC分类号： H01L29/76
CPC分类号： H01L29/861 , H01L21/263 , H01L21/265 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device according to the invention has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
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公开(公告)号：US08741750B2
公开(公告)日：2014-06-03
申请号：US12571037
申请日：2009-09-30
IPC分类号： H01L21/26
CPC分类号： H01L21/26506 , H01L21/3242 , H01L29/66128 , H01L29/8611
摘要： A method for fabricating a semiconductor body is presented. The semiconductor body includes a p-conducting zone, an n-conducting zone and a pn junction in a depth T1 in the semiconductor body between the p-conducting zone and the n-conducting zone. The method includes providing the semiconductor body, producing the p-doped zone by the diffusion of an impurity that forms an acceptor in a first direction into the semiconductor body, and producing the n-conducting zone by the implantation of protons in the first direction into the semiconductor body into a depth T2>T1 and the subsequent heat treatment of the semiconductor body in order to form hydrogen-induced donors.
摘要翻译： 本发明提供一种制造半导体器件的方法。 半导体本体在p导电区和n导电区之间包括在半导体本体中的深度T1的p导电区，n导电区和pn结。 该方法包括提供半导体本体，通过在第一方向上将形成受主的杂质扩散到半导体本体中而产生p掺杂区，并通过沿第一方向注入质子来产生n导电区， 半导体本体进入深度T2> T1并随后对半导体主体进行热处理，以形成氢诱导的供体。
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公开(公告)号：US20130320487A1
公开(公告)日：2013-12-05
申请号：US13487540
申请日：2012-06-04
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L29/861 , H01L21/761 , H01L21/76224 , H01L29/0619 , H01L29/0649 , H01L29/0692 , H01L29/872
摘要： A semiconductor body of a semiconductor device includes a doped layer of a first conductivity type and one or more doped zones of a second conductivity type. The one or more doped zones are formed between the doped layer and the first surface of a semiconductor body. Trench structures extend from one of the first and the second opposing surface into the semiconductor body. The trench structures are arranged between portions of the semiconductor body which are electrically connected to each other. The trench structures may be arranged for mitigating mechanical stress, locally controlling charge carrier mobility, locally controlling a charge carrier recombination rate and/or shaping buried diffusion zones.
摘要翻译： 半导体器件的半导体本体包括第一导电类型的掺杂层和第二导电类型的一个或多个掺杂区。 一个或多个掺杂区形成在半导体本体的掺杂层和第一表面之间。 沟槽结构从第一和第二相对表面之一延伸到半导体本体中。 沟槽结构布置在彼此电连接的半导体本体的部分之间。 沟槽结构可以被布置用于减轻机械应力，局部地控制电荷载流子迁移率，局部地控制电荷载流子复合速率和/或成形掩埋扩散区。
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公开(公告)号：US08003502B2
公开(公告)日：2011-08-23
申请号：US12416935
申请日：2009-04-02
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaeffer , Franz-Josef Niedernostheide
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaeffer , Franz-Josef Niedernostheide
IPC分类号： H01L21/425
CPC分类号： H01L29/861 , H01L21/263 , H01L21/265 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。
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公开(公告)号：US20100087053A1
公开(公告)日：2010-04-08
申请号：US12571037
申请日：2009-09-30
CPC分类号： H01L21/26506 , H01L21/3242 , H01L29/66128 , H01L29/8611
摘要： A method for fabricating a semiconductor body is presented. The semiconductor body includes a p-conducting zone, an n-conducting zone and a pn junction in a depth T1 in the semiconductor body between the p-conducting zone and the n-conducting zone. The method includes providing the semiconductor body, producing the p-doped zone by the diffusion of an impurity that forms an acceptor in a first direction into the semiconductor body, and producing the n-conducting zone by the implantation of protons in the first direction into the semiconductor body into a depth T2>T1 and the subsequent heat treatment of the semiconductor body in order to form hydrogen-induced donors.
摘要翻译： 本发明提供一种制造半导体器件的方法。 半导体本体在p导电区和n导电区之间包括在半导体本体中的深度T1的p导电区，n导电区和pn结。 该方法包括提供半导体本体，通过在第一方向上将形成受主的杂质扩散到半导体本体中而产生p掺杂区，并通过沿第一方向注入质子来产生n导电区， 半导体本体进入深度T2> T1并随后对半导体主体进行热处理，以形成氢诱导的供体。
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