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公开(公告)号：US10651037B2
公开(公告)日：2020-05-12
申请号：US11232735
申请日：2005-09-22
IPC分类号： H01L21/265 , H01L29/66 , H01L21/304 , H01L29/10 , H01L21/324 , H01L21/263 , H01L29/08
摘要： One embodiment of the invention relates to a method for fabricating a doped semiconductor zone in a semiconductor body. The method includes implanting dopant particles via one side into the semiconductor body or applying a layer containing dopant particles to one side of the semiconductor body. The method also includes irradiating the semiconductor body via the one side with further particles at least in the region containing the dopant particles. The method finally includes carrying out a thermal treatment by means of which the semiconductor body is heated, at least in the region containing the dopant particles, to a predetermined temperature in order to activate the implanted dopant particles, said temperature being less than 700° C.
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公开(公告)号：US20060073684A1
公开(公告)日：2006-04-06
申请号：US11232735
申请日：2005-09-22
IPC分类号： H01L21/425
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/26513 , H01L21/2658 , H01L21/304 , H01L21/324 , H01L29/0878 , H01L29/1095 , H01L29/66136 , H01L29/66333 , H01L29/66712 , H01L29/66727 , H01L29/66734
摘要： One embodiment of the invention relates to a method for fabricating a doped semiconductor zone in a semiconductor body. The method includes implanting dopant particles via one side into the semiconductor body or applying a layer containing dopant particles to one side of the semiconductor body. The method also includes irradiating the semiconductor body via the one side with further particles at least in the region containing the dopant particles. The method finally includes carrying out a thermal treatment by means of which the semiconductor body is heated, at least in the region containing the dopant particles, to a predetermined temperature in order to activate the implanted dopant particles, said temperature being less than 700° C.
摘要翻译： 本发明的一个实施例涉及在半导体本体中制造掺杂半导体区的方法。 该方法包括通过一侧将掺杂剂颗粒注入到半导体本体中，或者将包含掺杂剂颗粒的层施加到半导体本体的一侧。 该方法还包括至少在包含掺杂剂颗粒的区域中经由一侧照射半导体本体的另外的颗粒。 该方法最终包括至少在含有掺杂剂颗粒的区域中将半导体体加热至预定温度进行热处理，以激活注入的掺杂剂颗粒，所述温度低于700℃ 。
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3.发明申请公开(公告)号：US20140001514A1
公开(公告)日：2014-01-02
申请号：US13539944
申请日：2012-07-02
申请人： Hans-Joachim Schulze , Franz Hirler , Anton Mauder , Helmut Strack , Frank Kahlmann , Gerhard Miller
发明人： Hans-Joachim Schulze , Franz Hirler , Anton Mauder , Helmut Strack , Frank Kahlmann , Gerhard Miller
IPC分类号： H01L29/36 , H01L21/225
CPC分类号： H01L29/66348 , H01L21/2205 , H01L21/2658 , H01L29/0619 , H01L29/0634 , H01L29/0638 , H01L29/0878 , H01L29/102 , H01L29/1095 , H01L29/165 , H01L29/167 , H01L29/36 , H01L29/402 , H01L29/404 , H01L29/407 , H01L29/7397 , H01L29/7428 , H01L29/7802 , H01L29/7811 , H01L29/7813 , H01L29/7816 , H01L29/861 , H01L29/872
摘要： A semiconductor device includes a device region. The device region includes at least one device region section including dopant atoms of a first doping type and with a first doping concentration of at least 1E16 cm−3 and dopant atoms of a second doping type and with a second doping concentration of at least 1E16 cm−3.
摘要翻译： 半导体器件包括器件区域。 器件区域包括至少一个器件区域部分，其包括第一掺杂类型的掺杂剂原子和具有至少1E16cm-3的第一掺杂浓度和第二掺杂类型的掺杂剂原子，并且具有至少1E16cm的第二掺杂浓度 -3。
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公开(公告)号：US20120256250A1
公开(公告)日：2012-10-11
申请号：US13082679
申请日：2011-04-08
IPC分类号： H01L27/06 , H01L21/336
CPC分类号： H01L21/823487 , H01L27/0694 , H01L27/1207 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component includes a sequence of layers, the sequence of layers including a first insulator layer, a first semiconductor layer disposed on the first insulator layer, a second insulator layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the second insulator layer. The semiconductor component also includes a plurality of devices at least partly formed in the first semiconductor layer. A first one of the plurality of devices is a power transistor formed in a first region of the first semiconductor layer and a first region of the second semiconductor layer. The first region of the first and second semiconductor layers are in electrical contact with one another through a first opening in the second insulator layer.
摘要翻译： 半导体部件包括一层层，所述层序列包括第一绝缘体层，设置在第一绝缘体层上的第一半导体层，设置在第一半导体层上的第二绝缘体层，以及设置在第二绝缘体层上的第二半导体层 绝缘体层。 半导体部件还包括至少部分地形成在第一半导体层中的多个器件。 多个器件中的第一个是在第一半导体层的第一区域和第二半导体层的第一区域中形成的功率晶体管。 第一和第二半导体层的第一区域通过第二绝缘体层中的第一开口彼此电接触。
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公开(公告)号：US20120223420A1
公开(公告)日：2012-09-06
申请号：US13470830
申请日：2012-05-14
IPC分类号： H01L29/06
CPC分类号： H01L29/0649 , H01L21/0237 , H01L21/02642 , H01L21/02647 , H01L21/31144 , H01L21/74 , H01L21/76224 , H01L21/7624 , H01L21/76248 , H01L21/76283
摘要： One aspect includes a semiconductor arrangement with a semiconductor body having a first surface. A buried material layer is in the semiconductor body, the buried material layer being arranged distant to the first surface. A monocrystalline semiconductor material is arranged between the material layer and the first surface, and a monocrystalline semiconductor material adjoins the material layer in a lateral direction of the semiconductor body.
摘要翻译： 一个方面包括具有半导体本体的具有第一表面的半导体装置。 掩埋材料层位于半导体本体中，掩埋材料层被布置成远离第一表面。 单晶半导体材料布置在材料层和第一表面之间，单晶半导体材料在半导体主体的横向方向上邻接材料层。
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公开(公告)号：US20100210091A1
公开(公告)日：2010-08-19
申请号：US12769976
申请日：2010-04-29
IPC分类号： H01L21/762 , H01L21/461 , H01L21/22 , H01L21/38 , H01L21/302
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/3242
摘要： A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.
摘要翻译： 一种制造半导体的方法包括提供具有第一侧和第二侧的p掺杂半导体本体; 通过第一侧将半导体本体中的质子注入半导体本体的目标深度; 将半导体主体的第一侧接合到载体基板; 通过加热所述半导体本体从而在半导体本体中形成pn结，形成半导体本体中的n掺杂区; 以及移除所述半导体本体的所述第二侧至少与在所述pn结处跨过的空间电荷区域一样远。
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7.发明授权Metal-semiconductor contact, semiconductor component, integrated circuit arrangement and method 有权金属半导体接触，半导体元件，集成电路布置和方法公开(公告)号：US07560783B2
公开(公告)日：2009-07-14
申请号：US11455397
申请日：2006-06-19
IPC分类号： H01L29/772
CPC分类号： H01L29/7805 , H01L21/28512 , H01L21/28568 , H01L29/0634 , H01L29/0847 , H01L29/1095 , H01L29/167 , H01L29/32 , H01L29/456 , H01L29/7395 , H01L29/7802 , H01L29/7803 , H01L29/7813 , H01L29/861 , H01L29/8613
摘要： The present invention relates to a metal-semiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a non-reactive metal-semiconductor contact is formed between the metallization and the semiconductor layer. The metallization and/or the semiconductor layer are formed in such a way that only a fraction of the introduced doping concentration is electrically active, and a semiconductor layer doped only with this fraction of the doping concentration only forms a Schottky contact when contact is made with the metallization. Furthermore, the invention relates to a semiconductor component comprising a drain zone, body zones embedded therein and source zones again embedded therein. The semiconductor component has metal-semiconductor contacts in which the contacts made contact only with the source zones but not with the body zones.
摘要翻译： 本发明涉及包含半导体层并包含施加到半导体层的金属化的金属 - 半导体接触，将高掺杂浓度引入到半导体层中，使得在金属化和金属化之间形成非反应性金属 - 半导体接触 半导体层。 金属化和/或半导体层以这样的方式形成，使得只有一部分引入的掺杂浓度是电活性的，并且仅当这一部分掺杂浓度掺杂的半导体层仅在与...接触时形成肖特基接触 金属化。 此外，本发明涉及一种半导体部件，其包括漏区，嵌入其中的主体区和再次嵌入其中的源区。 半导体部件具有金属半导体触点，触点仅与源极区域接触而不与主体区域接触。
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8.发明申请POWER SEMICONDUCTOR COMPONENT WITH CHARGE COMPENSATION STRUCTURE AND METHOD FOR THE FABRICATION THEREOF 有权具有电荷补偿结构的功率半导体元件及其制造方法公开(公告)号：US20090130806A1
公开(公告)日：2009-05-21
申请号：US12350776
申请日：2009-01-08
申请人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
发明人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
IPC分类号： H01L21/336
CPC分类号： H01L29/7811 , H01L21/2205 , H01L21/2252 , H01L21/2255 , H01L23/291 , H01L23/298 , H01L29/0634 , H01L29/0661 , H01L29/1095 , H01L29/1604 , H01L29/1608 , H01L29/165 , H01L29/66712 , H01L29/7802 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.
摘要翻译： 具有电荷补偿结构的半导体部件具有在两个电极之间具有漂移路径的半导体本体。 漂移路径具有第一导电类型的漂移区域，其在漂移路径中的电极之间提供电流路径，而互补导电类型的电荷补偿区域限制漂移路径的电流路径。 为此，漂移路径具有两个交替布置的外延生长的扩散区类型，第一漂移区类型在单晶衬底上具有单晶半导体材料，以及在沟槽结构中具有单晶半导体材料的第二漂移区类型，具有互补掺杂 壁，形成电荷补偿区的互补掺杂壁。
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9.发明申请SEMICONDUCTOR COMPONENT WITH VERTICAL STRUCTURES HAVING A HIGH ASPECT RATIO AND METHOD 有权具有高度比例和方法的垂直结构的半导体元件公开(公告)号：US20080197441A1
公开(公告)日：2008-08-21
申请号：US12021736
申请日：2008-01-29
IPC分类号： H01L23/58 , H01L21/762
CPC分类号： H01L21/76224 , H01L29/0653 , H01L29/0878 , H01L29/161 , H01L29/165 , H01L29/407 , H01L29/66734 , H01L29/7803 , H01L29/7804 , H01L29/7806 , H01L29/7813 , H01L29/7831
摘要： A semiconductor component with vertical structures having a high aspect ratio and method. In one embodiment, a drift zone is arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone in a first direction. A dielectric layer is arranged between the drift zone and the drift control zone wherein the drift zone has a varying doping and/or a varying material composition at least in sections proceeding from the dielectric.
摘要翻译： 具有高纵横比和垂直结构的半导体元件。 在一个实施例中，漂移区布置在第一和第二组分区之间。 漂移控制区在第一方向上布置成与漂移区相邻。 电介质层布置在漂移区和漂移控制区之间，其中漂移区具有至少在从电介质进行的部分中的变化的掺杂和/或变化的材料组成。
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10.发明申请METHOD FOR FABRICATING A TRENCH STRUCTURE, AND A SEMICONDUCTOR ARRANGEMENT COMPRISING A TRENCH STRUCTURE 审中-公开用于制造TRENCH结构的方法和包括TRENCH结构的半导体布置公开(公告)号：US20080067626A1
公开(公告)日：2008-03-20
申请号：US11834154
申请日：2007-08-06
申请人： Franz Hirler , Thoralf Kautzsch , Anton Mauder , Michael Rueb , Hans-Joachim Schulze , Helmut Strack , Armin Willmeroth
发明人： Franz Hirler , Thoralf Kautzsch , Anton Mauder , Michael Rueb , Hans-Joachim Schulze , Helmut Strack , Armin Willmeroth
CPC分类号： H01L21/76224 , H01L21/3247 , H01L29/0653 , H01L29/407 , H01L29/66621 , H01L29/7803 , H01L29/7804
摘要： A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure.
摘要翻译： 一种半导体器件，其中制造从半导体本体的表面进入半导体本体的第一沟槽部分。 在表面上方和第一沟槽部分之上产生半导体层。 在半导体层中产生另一沟槽部分，使得第一沟槽部分和另外的沟槽部分形成连续的沟槽结构。
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