Methods of forming packaged micro-electromechanical devices
    1.
    发明授权
    Methods of forming packaged micro-electromechanical devices 有权
    形成封装的微机电装置的方法

    公开(公告)号:US07955885B1

    公开(公告)日:2011-06-07

    申请号:US12351020

    申请日:2009-01-09

    IPC分类号: H01L21/00 H01L21/30 H01L21/46

    摘要: Methods of forming packaged micro-electromechanical devices include forming a first substrate having a micro-electromechanical device therein, which extends adjacent a first surface of the first substrate. A first surface of a second substrate is then bonded to the first surface of the first substrate, to thereby encapsulate the micro-electromechanical device within a space provided between the first and second substrates. Subsequent to bonding, a second surface of the second substrate is selectively etched to define at least one through-substrate opening therein, which exposes an electrode of the micro-electromechanical device. Thereafter, the through-substrate opening is filled with an electrically conductive through-substrate via.

    摘要翻译: 形成包装的微机电装置的方法包括在其中形成具有微机电装置的第一基板,其在第一基板的第一表面附近延伸。 然后将第二基板的第一表面接合到第一基板的第一表面,从而将微机电装置封装在设置在第一和第二基板之间的空间内。 在接合之后,选择性地蚀刻第二衬底的第二表面以在其中限定其中暴露微机电器件的电极的至少一个贯穿衬底开口。 此后,贯通基板开口填充有导电贯穿基板通孔。

    Thin-film bulk acoustic resonators having perforated resonator body supports that enhance quality factor
    2.
    发明授权
    Thin-film bulk acoustic resonators having perforated resonator body supports that enhance quality factor 有权
    具有穿孔谐振器体支架的薄膜体声共振器可以提高品质因数

    公开(公告)号:US08106724B1

    公开(公告)日:2012-01-31

    申请号:US12508257

    申请日:2009-07-23

    IPC分类号: H03H9/00 H01L41/08

    摘要: Micro-electromechanical acoustic resonators include a substrate having a cavity therein and a resonator body suspended over the cavity. The resonator body is anchored on opposing sides thereof (by support beams) to first and second portions of the substrate. These first and second portions of the substrate, which extend over the cavity as first and second ledges, respectively, each have at least one perforation therein disposed over the cavity. These perforations may be open or filled. The first and second ledges are formed of a first material (e.g., silicon) and the first and second ledges are filled with a second material having a relatively high acoustic impedance relative to the first material. This second material may include a material selected from a group consisting of tungsten (W), copper (Cu), molybdenum (Mo).

    摘要翻译: 微机电声谐振器包括其中具有空腔的基板和悬在空腔上的谐振器体。 谐振器主体被固定在基板的第一和第二部分的相对侧(通过支撑梁)上。 基板的这些第一和第二部分分别在第一和第二凸缘之上延伸到空腔上,每个在其上设置有至少一个穿孔。 这些穿孔可以是开放的或填充的。 第一和第二凸缘由第一材料(例如硅)形成,并且第一和第二凸缘由相对于第一材料具有相对较高的声阻抗的第二材料填充。 该第二材料可以包括选自钨(W),铜(Cu),钼(Mo)的材料。

    Micro-electromechanical devices having variable capacitors therein that compensate for temperature-induced frequency drift in acoustic resonators
    3.
    发明授权
    Micro-electromechanical devices having variable capacitors therein that compensate for temperature-induced frequency drift in acoustic resonators 有权
    具有可变电容器的微机电装置,其补偿声谐振器中的温度感应频率漂移

    公开(公告)号:US07834524B2

    公开(公告)日:2010-11-16

    申请号:US12404830

    申请日:2009-03-16

    IPC分类号: H01L41/08 H03H9/13 H03H9/15

    摘要: Micro-electromechanical devices include a temperature-compensation capacitor and a thin-film bulk acoustic resonator having a first terminal electrically coupled to an electrode of the temperature-compensation capacitor. The temperature-compensation capacitor includes a bimorph beam having a first electrode thereon and a second electrode extending opposite the first electrode. This bimorph beam is configured to yield an increase in spacing between the first and second electrodes in response to an increase in temperature of the micro-electromechanical device. This increase in spacing between the first and second electrodes leads to a decrease in capacitance of the temperature-compensation capacitor. Advantageously, this decrease in capacitance can be used to counteract a negative temperature coefficient of frequency associated with the thin-film bulk acoustic resonator, and thereby render the resonant frequency of the micro-electromechanical device more stable in response to temperature fluctuations.

    摘要翻译: 微机电装置包括温度补偿电容器和具有电耦合到温度补偿电容器的电极的第一端子的薄膜体声波谐振器。 温度补偿电容器包括其上具有第一电极的双压电晶片和与第一电极相对延伸的第二电极。 该双压电晶片梁被配置为响应于微机电装置的温度升高而产生第一和第二电极之间的间隔的增加。 这种第一和第二电极之间的间隔增加导致温度补偿电容器的电容降低。 有利地,电容的这种减小可以用于抵消与薄膜体声波谐振器相关联的频率的负温度系数,从而使得微机电装置的谐振频率响应于温度波动而更加稳定。

    Microelectromechanical resonators having resistive heating elements therein configured to provide frequency tuning through convective heating of resonator bodies
    4.
    发明授权
    Microelectromechanical resonators having resistive heating elements therein configured to provide frequency tuning through convective heating of resonator bodies 失效
    其中具有电阻加热元件的微机电谐振器被配置为通过谐振器体的对流加热来提供频率调谐

    公开(公告)号:US08610336B1

    公开(公告)日:2013-12-17

    申请号:US13250560

    申请日:2011-09-30

    IPC分类号: H01L41/08

    摘要: A microelectromechanical resonator includes a resonator body, which is encapsulated within a sealed cavity extending between first and second substrates that are bonded together. The resonator body is anchored to the first substrate by at least a pair of tethers that suspend the resonator body opposite an underlying recess in the first substrate. A resistive heating element is provided, which is configured to indirectly heat the resonator body through convective heating of the cavity. This resistive heating element may be disposed on an inner surface of the second substrate that is exposed to the cavity. The resonator may also include first and second electrical interconnects, which extend through the second substrate and contact respective first and second portions of the resistive heating element.

    摘要翻译: 微机电谐振器包括谐振器体,该谐振器体封装在第一和第二基板之间延伸的密封腔中,所述第一和第二基板被接合在一起。 谐振器主体通过至少一对将谐振器体悬挂在第一衬底中与下面的凹槽相对的系绳来锚定到第一衬底。 提供电阻加热元件,其被配置为通过腔体的对流加热来间接加热谐振器体。 该电阻加热元件可以设置在暴露于空腔的第二基板的内表面上。 谐振器还可以包括第一和第二电互连,其延伸穿过第二基板并接触电阻加热元件的相应的第一和第二部分。

    Thin-film bulk acoustic resonators having perforated bodies that provide reduced susceptibility to process-induced lateral dimension variations
    5.
    发明授权
    Thin-film bulk acoustic resonators having perforated bodies that provide reduced susceptibility to process-induced lateral dimension variations 有权
    具有穿孔体的薄膜体声共振器对工艺引起的横向尺寸变化提供降低的敏感性

    公开(公告)号:US07939990B2

    公开(公告)日:2011-05-10

    申请号:US12393566

    申请日:2009-02-26

    IPC分类号: H01L41/09

    摘要: Micro-electromechanical acoustic resonators include a resonator body suspended over a substrate. The resonator body may have a single perforation therein, which may extend substantially or completely therethrough. The resonator body may also be configured to have a center-of-mass within an interior of the perforation and/or a nodal line that overlaps the perforation. A perimeter and depth of the single perforation can be configured to reduce a susceptibility of the acoustic resonator to process-induced variations in resonant frequency relative to an otherwise equivalent resonator that omits the single perforation. In other embodiments, the resonator body may have multiple perforations therein that extend along a nodal line of the resonator.

    摘要翻译: 微机电声谐振器包括悬挂在衬底上的谐振器体。 谐振器本体可以在其中具有单个穿孔,其可以基本上或完全地延伸穿过其中。 谐振器主体还可以被配置为具有在穿孔内部和/或与穿孔重叠的节点线之间的质心。 单个穿孔的周长和深度可以被配置为相对于省略单个穿孔的另外等效的谐振器来减小声谐振器对于处理引起的谐振频率变化的敏感性。 在其他实施例中,谐振器本体可以具有沿着谐振器的节点线延伸的多个穿孔。

    Micro-Electromechanical Devices Having Variable Capacitors Therein that Compensate for Temperature-Induced Frequency Drift in Acoustic Resonators
    6.
    发明申请
    Micro-Electromechanical Devices Having Variable Capacitors Therein that Compensate for Temperature-Induced Frequency Drift in Acoustic Resonators 有权
    具有可变电容器的微机电装置,用于补偿声谐振器中的温度感应频率漂移

    公开(公告)号:US20100194499A1

    公开(公告)日:2010-08-05

    申请号:US12404830

    申请日:2009-03-16

    IPC分类号: H03H9/00 H04R17/00

    摘要: Micro-electromechanical devices include a temperature-compensation capacitor and a thin-film bulk acoustic resonator having a first terminal electrically coupled to an electrode of the temperature-compensation capacitor. The temperature-compensation capacitor includes a bimorph beam having a first electrode thereon and a second electrode extending opposite the first electrode. This bimorph beam is configured to yield an increase in spacing between the first and second electrodes in response to an increase in temperature of the micro-electromechanical device. This increase in spacing between the first and second electrodes leads to a decrease in capacitance of the temperature-compensation capacitor. Advantageously, this decrease in capacitance can be used to counteract a negative temperature coefficient of frequency associated with the thin-film bulk acoustic resonator, and thereby render the resonant frequency of the micro-electromechanical device more stable in response to temperature fluctuations.

    摘要翻译: 微机电装置包括温度补偿电容器和具有电耦合到温度补偿电容器的电极的第一端子的薄膜体声波谐振器。 温度补偿电容器包括其上具有第一电极的双压电晶片和与第一电极相对延伸的第二电极。 该双压电晶片梁被配置为响应于微机电装置的温度升高而产生第一和第二电极之间的间隔的增加。 这种第一和第二电极之间的间隔增加导致温度补偿电容器的电容降低。 有利地,电容的这种减小可以用于抵消与薄膜体声波谐振器相关联的频率的负温度系数,从而使得微机电装置的谐振频率响应于温度波动而更加稳定。

    Thin-Film Bulk Acoustic Resonators Having Reduced Susceptibility to Process-Induced Material Thickness Variations
    7.
    发明申请
    Thin-Film Bulk Acoustic Resonators Having Reduced Susceptibility to Process-Induced Material Thickness Variations 审中-公开
    具有降低对工艺感应材料厚度变化的敏感性的薄膜体积声谐振器

    公开(公告)号:US20100194246A1

    公开(公告)日:2010-08-05

    申请号:US12363142

    申请日:2009-01-30

    IPC分类号: H01L41/047

    摘要: Thin-film bulk acoustic resonators include a resonator body (e.g., silicon body), a bottom electrode on the resonator body and a piezoelectric layer on the bottom electrode. At least one top electrode is also provided on the piezoelectric layer. In order to inhibit process-induced variations in material layer thicknesses from significantly affecting a desired resonant frequency of the resonator, the top and bottom electrodes are fabricated to have a combined thickness that is proportional to a target thickness of the piezoelectric layer extending between the top and bottom electrodes.

    摘要翻译: 薄膜体声共振器包括谐振器体(例如硅体),谐振器体上的底电极和底电极上的压电层。 至少一个顶部电极也设置在压电层上。 为了抑制过程引起的材料层厚度的变化显着影响谐振器的期望谐振频率,顶部和底部电极被制造成具有与在顶部之间延伸的压电层的目标厚度成比例的组合厚度 和底部电极。

    THIN-FILM BULK ACOUSTIC RESONATORS HAVING PERFORATED BODIES THAT PROVIDE REDUCED SUSCEPTIBILITY TO PROCESS-INDUCED LATERAL DIMENSION VARIATIONS
    8.
    发明申请
    THIN-FILM BULK ACOUSTIC RESONATORS HAVING PERFORATED BODIES THAT PROVIDE REDUCED SUSCEPTIBILITY TO PROCESS-INDUCED LATERAL DIMENSION VARIATIONS 有权
    具有减少对加工诱导的侧向尺寸变化的可靠性的执行体的薄膜膨胀聚合谐振器

    公开(公告)号:US20100194241A1

    公开(公告)日:2010-08-05

    申请号:US12393566

    申请日:2009-02-26

    IPC分类号: H01L41/04

    摘要: Micro-electromechanical acoustic resonators include a resonator body suspended over a substrate. The resonator body may have a single perforation therein, which may extend substantially or completely therethrough. The resonator body may also be configured to have a center-of-mass within an interior of the perforation and/or a nodal line that overlaps the perforation. A perimeter and depth of the single perforation can be configured to reduce a susceptibility of the acoustic resonator to process-induced variations in resonant frequency relative to an otherwise equivalent resonator that omits the single perforation. In other embodiments, the resonator body may have multiple perforations therein that extend along a nodal line of the resonator.

    摘要翻译: 微机电声谐振器包括悬挂在衬底上的谐振器体。 谐振器本体可以在其中具有单个穿孔,其可以基本上或完全地延伸穿过其中。 谐振器主体还可以被配置为具有在穿孔内部和/或与穿孔重叠的节点线之间的质心。 单个穿孔的周长和深度可以被配置为相对于省略单个穿孔的另外等效的谐振器来减小声谐振器对于处理引起的谐振频率变化的敏感性。 在其他实施例中,谐振器本体可以具有沿着谐振器的节点线延伸的多个穿孔。

    OFSense: light-weight networking sensing with OpenFlow
    9.
    发明授权
    OFSense: light-weight networking sensing with OpenFlow 有权
    OFSense:使用OpenFlow进行轻量级网络感知

    公开(公告)号:US08874737B2

    公开(公告)日:2014-10-28

    申请号:US13554632

    申请日:2012-07-20

    摘要: A method for determining the state of an entire network, including state of applications and infrastructure includes receiving network control messages in an OpenFlow network, passing normal network control messages through OFSense, a control plane middleware, and constructing from the network control messages an application level connectivity graph to infer network delay between any two communicating server in the network and estimating an application response time of a given server in the network; and providing state of the network for enabling intelligent detection and diagnosis of infrastructure and application performance.

    摘要翻译: 一种用于确定整个网络的状态的方法,包括应用和基础设施的状态包括在OpenFlow网络中接收网络控制消息,通过OFSense传递正常网络控制消息,控制平面中间件,以及从网络控制消息构建应用级别 连接图,以推断网络中任何两个通信服务器之间的网络延迟,并估计网络中给定服务器的应用程序响应时间; 并提供网络的状态,以实现基础设施和应用程序性能的智能检测和诊断。

    OFSense: Light-Weight Networking Sensing With OpenFlow
    10.
    发明申请
    OFSense: Light-Weight Networking Sensing With OpenFlow 有权
    OFSense:使用OpenFlow进行轻量级网络感知

    公开(公告)号:US20130185419A1

    公开(公告)日:2013-07-18

    申请号:US13554632

    申请日:2012-07-20

    IPC分类号: H04L12/26

    摘要: A method for determining the state of an entire network, including state of applications and infrastructure includes receiving network control messages in an OpenFlow network, passing normal network control messages through OFSense, a control plane middleware, and constructing from the network control messages an application level connectivity graph to infer network delay between any two communicating server in the network and estimating an application response time of a given server in the network; and providing state of the network for enabling intelligent detection and diagnosis of infrastructure and application performance.

    摘要翻译: 一种用于确定整个网络的状态的方法,包括应用和基础设施的状态包括在OpenFlow网络中接收网络控制消息,通过OFSense传递正常网络控制消息,控制平面中间件,以及从网络控制消息构建应用级别 连接图,以推断网络中任何两个通信服务器之间的网络延迟,并估计网络中给定服务器的应用程序响应时间; 并提供网络的状态,以实现基础设施和应用程序性能的智能检测和诊断。