公开(公告)号：US08106724B1

公开(公告)日：2012-01-31

申请号：US12508257

申请日：2009-07-23

Applicant: Ye Wang ,  Seungbae Lee ,  Harmeet Bhugra

Inventor： Ye Wang ,  Seungbae Lee ,  Harmeet Bhugra

IPC: H03H9/00 ,  H01L41/08

CPC classification number: H03H9/2463 ,  H03H2009/02251 ,  H03H2009/0244 ,  H03H2009/241

Abstract: Micro-electromechanical acoustic resonators include a substrate having a cavity therein and a resonator body suspended over the cavity. The resonator body is anchored on opposing sides thereof (by support beams) to first and second portions of the substrate. These first and second portions of the substrate, which extend over the cavity as first and second ledges, respectively, each have at least one perforation therein disposed over the cavity. These perforations may be open or filled. The first and second ledges are formed of a first material (e.g., silicon) and the first and second ledges are filled with a second material having a relatively high acoustic impedance relative to the first material. This second material may include a material selected from a group consisting of tungsten (W), copper (Cu), molybdenum (Mo).

Abstract translation: 微机电声谐振器包括其中具有空腔的基板和悬在空腔上的谐振器体。 谐振器主体被固定在基板的第一和第二部分的相对侧（通过支撑梁）上。 基板的这些第一和第二部分分别在第一和第二凸缘之上延伸到空腔上，每个在其上设置有至少一个穿孔。 这些穿孔可以是开放的或填充的。 第一和第二凸缘由第一材料（例如硅）形成，并且第一和第二凸缘由相对于第一材料具有相对较高的声阻抗的第二材料填充。 该第二材料可以包括选自钨（W），铜（Cu），钼（Mo）的材料。

公开(公告)号：US07834524B2

公开(公告)日：2010-11-16

申请号：US12404830

申请日：2009-03-16

Applicant: Ye Wang ,  Harmeet Bhugra

Inventor： Ye Wang ,  Harmeet Bhugra

IPC: H01L41/08 ,  H03H9/13 ,  H03H9/15

CPC classification number: H03H9/172 ,  H03H2009/241 ,  Y10T29/42

Abstract: Micro-electromechanical devices include a temperature-compensation capacitor and a thin-film bulk acoustic resonator having a first terminal electrically coupled to an electrode of the temperature-compensation capacitor. The temperature-compensation capacitor includes a bimorph beam having a first electrode thereon and a second electrode extending opposite the first electrode. This bimorph beam is configured to yield an increase in spacing between the first and second electrodes in response to an increase in temperature of the micro-electromechanical device. This increase in spacing between the first and second electrodes leads to a decrease in capacitance of the temperature-compensation capacitor. Advantageously, this decrease in capacitance can be used to counteract a negative temperature coefficient of frequency associated with the thin-film bulk acoustic resonator, and thereby render the resonant frequency of the micro-electromechanical device more stable in response to temperature fluctuations.

Abstract translation: 微机电装置包括温度补偿电容器和具有电耦合到温度补偿电容器的电极的第一端子的薄膜体声波谐振器。 温度补偿电容器包括其上具有第一电极的双压电晶片和与第一电极相对延伸的第二电极。 该双压电晶片梁被配置为响应于微机电装置的温度升高而产生第一和第二电极之间的间隔的增加。 这种第一和第二电极之间的间隔增加导致温度补偿电容器的电容降低。 有利地，电容的这种减小可以用于抵消与薄膜体声波谐振器相关联的频率的负温度系数，从而使得微机电装置的谐振频率响应于温度波动而更加稳定。

公开(公告)号：US08610336B1

公开(公告)日：2013-12-17

申请号：US13250560

申请日：2011-09-30

Applicant: Ye Wang ,  Harmeet Bhugra ,  Seungbae Lee

Inventor： Ye Wang ,  Harmeet Bhugra ,  Seungbae Lee

IPC: H01L41/08

CPC classification number: H03H3/0073 ,  H03H3/0077 ,  H03H9/02338 ,  H03H9/02401 ,  H03H2009/241

Abstract: A microelectromechanical resonator includes a resonator body, which is encapsulated within a sealed cavity extending between first and second substrates that are bonded together. The resonator body is anchored to the first substrate by at least a pair of tethers that suspend the resonator body opposite an underlying recess in the first substrate. A resistive heating element is provided, which is configured to indirectly heat the resonator body through convective heating of the cavity. This resistive heating element may be disposed on an inner surface of the second substrate that is exposed to the cavity. The resonator may also include first and second electrical interconnects, which extend through the second substrate and contact respective first and second portions of the resistive heating element.

Abstract translation: 微机电谐振器包括谐振器体，该谐振器体封装在第一和第二基板之间延伸的密封腔中，所述第一和第二基板被接合在一起。 谐振器主体通过至少一对将谐振器体悬挂在第一衬底中与下面的凹槽相对的系绳来锚定到第一衬底。 提供电阻加热元件，其被配置为通过腔体的对流加热来间接加热谐振器体。 该电阻加热元件可以设置在暴露于空腔的第二基板的内表面上。 谐振器还可以包括第一和第二电互连，其延伸穿过第二基板并接触电阻加热元件的相应的第一和第二部分。

公开(公告)号：US07939990B2

公开(公告)日：2011-05-10

申请号：US12393566

申请日：2009-02-26

Applicant: Ye Wang ,  Harmeet Bhugra

Inventor： Ye Wang ,  Harmeet Bhugra

IPC: H01L41/09

CPC classification number: H03H9/172 ,  H03H9/2452 ,  H03H2009/0233 ,  H03H2009/241

Abstract: Micro-electromechanical acoustic resonators include a resonator body suspended over a substrate. The resonator body may have a single perforation therein, which may extend substantially or completely therethrough. The resonator body may also be configured to have a center-of-mass within an interior of the perforation and/or a nodal line that overlaps the perforation. A perimeter and depth of the single perforation can be configured to reduce a susceptibility of the acoustic resonator to process-induced variations in resonant frequency relative to an otherwise equivalent resonator that omits the single perforation. In other embodiments, the resonator body may have multiple perforations therein that extend along a nodal line of the resonator.

Abstract translation: 微机电声谐振器包括悬挂在衬底上的谐振器体。 谐振器本体可以在其中具有单个穿孔，其可以基本上或完全地延伸穿过其中。 谐振器主体还可以被配置为具有在穿孔内部和/或与穿孔重叠的节点线之间的质心。 单个穿孔的周长和深度可以被配置为相对于省略单个穿孔的另外等效的谐振器来减小声谐振器对于处理引起的谐振频率变化的敏感性。 在其他实施例中，谐振器本体可以具有沿着谐振器的节点线延伸的多个穿孔。

公开(公告)号：US07955885B1

公开(公告)日：2011-06-07

申请号：US12351020

申请日：2009-01-09

Applicant: Harmeet Bhugra ,  Kuolung Lei ,  Ye Wang

Inventor： Harmeet Bhugra ,  Kuolung Lei ,  Ye Wang

IPC: H01L21/00 ,  H01L21/30 ,  H01L21/46

CPC classification number: B81C1/00301 ,  B81B2207/095 ,  B81C2203/0118

Abstract: Methods of forming packaged micro-electromechanical devices include forming a first substrate having a micro-electromechanical device therein, which extends adjacent a first surface of the first substrate. A first surface of a second substrate is then bonded to the first surface of the first substrate, to thereby encapsulate the micro-electromechanical device within a space provided between the first and second substrates. Subsequent to bonding, a second surface of the second substrate is selectively etched to define at least one through-substrate opening therein, which exposes an electrode of the micro-electromechanical device. Thereafter, the through-substrate opening is filled with an electrically conductive through-substrate via.

Abstract translation: 形成包装的微机电装置的方法包括在其中形成具有微机电装置的第一基板，其在第一基板的第一表面附近延伸。 然后将第二基板的第一表面接合到第一基板的第一表面，从而将微机电装置封装在设置在第一和第二基板之间的空间内。 在接合之后，选择性地蚀刻第二衬底的第二表面以在其中限定其中暴露微机电器件的电极的至少一个贯穿衬底开口。 此后，贯通基板开口填充有导电贯穿基板通孔。

公开(公告)号：US20100194499A1

公开(公告)日：2010-08-05

申请号：US12404830

申请日：2009-03-16

Applicant: Ye Wang ,  Harmeet Bhugra

Inventor： Ye Wang ,  Harmeet Bhugra

IPC: H03H9/00 ,  H04R17/00

CPC classification number: H03H9/172 ,  H03H2009/241 ,  Y10T29/42

Abstract: Micro-electromechanical devices include a temperature-compensation capacitor and a thin-film bulk acoustic resonator having a first terminal electrically coupled to an electrode of the temperature-compensation capacitor. The temperature-compensation capacitor includes a bimorph beam having a first electrode thereon and a second electrode extending opposite the first electrode. This bimorph beam is configured to yield an increase in spacing between the first and second electrodes in response to an increase in temperature of the micro-electromechanical device. This increase in spacing between the first and second electrodes leads to a decrease in capacitance of the temperature-compensation capacitor. Advantageously, this decrease in capacitance can be used to counteract a negative temperature coefficient of frequency associated with the thin-film bulk acoustic resonator, and thereby render the resonant frequency of the micro-electromechanical device more stable in response to temperature fluctuations.

Abstract translation: 微机电装置包括温度补偿电容器和具有电耦合到温度补偿电容器的电极的第一端子的薄膜体声波谐振器。 温度补偿电容器包括其上具有第一电极的双压电晶片和与第一电极相对延伸的第二电极。 该双压电晶片梁被配置为响应于微机电装置的温度升高而产生第一和第二电极之间的间隔的增加。 这种第一和第二电极之间的间隔增加导致温度补偿电容器的电容降低。 有利地，电容的这种减小可以用于抵消与薄膜体声波谐振器相关联的频率的负温度系数，从而使得微机电装置的谐振频率响应于温度波动而更加稳定。

公开(公告)号：US20100194246A1

公开(公告)日：2010-08-05

申请号：US12363142

申请日：2009-01-30

Applicant: Ye Wang ,  Harmeet Bhugra

Inventor： Ye Wang ,  Harmeet Bhugra

IPC: H01L41/047

CPC classification number: H03H9/02047 ,  H03H9/02094 ,  H03H9/56

Abstract: Thin-film bulk acoustic resonators include a resonator body (e.g., silicon body), a bottom electrode on the resonator body and a piezoelectric layer on the bottom electrode. At least one top electrode is also provided on the piezoelectric layer. In order to inhibit process-induced variations in material layer thicknesses from significantly affecting a desired resonant frequency of the resonator, the top and bottom electrodes are fabricated to have a combined thickness that is proportional to a target thickness of the piezoelectric layer extending between the top and bottom electrodes.

Abstract translation: 薄膜体声共振器包括谐振器体（例如硅体），谐振器体上的底电极和底电极上的压电层。 至少一个顶部电极也设置在压电层上。 为了抑制过程引起的材料层厚度的变化显着影响谐振器的期望谐振频率，顶部和底部电极被制造成具有与在顶部之间延伸的压电层的目标厚度成比例的组合厚度 和底部电极。

公开(公告)号：US20100194241A1

公开(公告)日：2010-08-05

申请号：US12393566

申请日：2009-02-26

Applicant: Ye Wang ,  Harmeet Bhugra

Inventor： Ye Wang ,  Harmeet Bhugra

IPC: H01L41/04

CPC classification number: H03H9/172 ,  H03H9/2452 ,  H03H2009/0233 ,  H03H2009/241

Abstract: Micro-electromechanical acoustic resonators include a resonator body suspended over a substrate. The resonator body may have a single perforation therein, which may extend substantially or completely therethrough. The resonator body may also be configured to have a center-of-mass within an interior of the perforation and/or a nodal line that overlaps the perforation. A perimeter and depth of the single perforation can be configured to reduce a susceptibility of the acoustic resonator to process-induced variations in resonant frequency relative to an otherwise equivalent resonator that omits the single perforation. In other embodiments, the resonator body may have multiple perforations therein that extend along a nodal line of the resonator.

Abstract translation: 微机电声谐振器包括悬挂在衬底上的谐振器体。 谐振器本体可以在其中具有单个穿孔，其可以基本上或完全地延伸穿过其中。 谐振器主体还可以被配置为具有在穿孔内部和/或与穿孔重叠的节点线之间的质心。 单个穿孔的周长和深度可以被配置为相对于省略单个穿孔的另外等效的谐振器来减小声谐振器对于处理引起的谐振频率变化的敏感性。 在其他实施例中，谐振器本体可以具有沿着谐振器的节点线延伸的多个穿孔。

公开(公告)号：US07871857B1

公开(公告)日：2011-01-18

申请号：US12240292

申请日：2008-09-29

Applicant: Kuolung Lei ,  Harmeet Bhugra

Inventor： Kuolung Lei ,  Harmeet Bhugra

IPC: H01L21/00 ,  H01L23/02 ,  H05K1/14

CPC classification number: H01L21/78 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/051 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/11462 ,  H01L2224/11901 ,  H01L2224/11914 ,  H01L2224/13011 ,  H01L2224/13082 ,  H01L2224/13101 ,  H01L2224/13117 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/81097 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/81899 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00

Abstract: Methods of forming multi-chip semiconductor substrates include forming a first plurality of dicing streets in a first surface of a first semiconductor wafer having a first plurality of bonding sites thereon and forming a second plurality of dicing streets in a first surface of a second semiconductor wafer having a second plurality of bonding sites thereon. The first surfaces of the first and second semiconductor wafers are bonded together so that the first plurality of dicing streets are aligned with the second plurality of dicing streets and the first plurality of bonding sites are matingly received and permanently affixed within the second plurality of bonding sites. A plurality of bonded pairs of semiconductor chips are then formed by planarizing the second surface of the second semiconductor wafer until the second plurality of dicing streets are exposed.

Abstract translation: 形成多芯片半导体衬底的方法包括在其上具有第一多个结合位置的第一半导体晶片的第一表面中形成第一多个切割街道，并且在第二半导体晶片的第一表面中形成第二多个切割街道 在其上具有第二多个结合位置。 第一和第二半导体晶片的第一表面被结合在一起，使得第一多个切割街道与第二多个切割街道对准，并且第一多个结合位置被配合地接收并永久地固定在第二多个结合位置 。 然后通过平面化第二半导体晶片的第二表面直到第二多个切割街道露出来形成多个键合的半导体芯片对。

公开(公告)号：US07194573B1

公开(公告)日：2007-03-20

申请号：US10721036

申请日：2003-11-21

Applicant: Jakob Saxtorph ,  John R. Mick, Jr. ,  Harmeet Bhugra

Inventor： Jakob Saxtorph ,  John R. Mick, Jr. ,  Harmeet Bhugra

IPC: G06F12/00

CPC classification number: G11C15/00

Abstract: CAM-based search engine devices operate to reduce the occurrence of duplicate learned entries within a CAM database when processing search and learn (SNL) instructions. A search engine device may be configured to support processing of first and second immediately consecutive and equivalent SNL instructions as a first SNL instruction and a second search and search instruction, respectively. This processing is performed in order to block an addition of a duplicate learned entry within a database in the search engine device. The search engine device may also be configured to selectively block processing of the second SNL instruction as a second search and search instruction in response to detecting the database as full when the first SNL instruction is processed.

Abstract translation: 基于CAM的搜索引擎设备操作以在处理搜索和学习（SNL）指令时减少CAM数据库内的重复学习条目的出现。 搜索引擎设备可以被配置为分别支持作为第一SNL指令和第二搜索和搜索指令的第一和第二直接连续和等效的SNL指令的处理。 执行该处理以阻止在搜索引擎设备中的数据库中添加重复的学习条目。 搜索引擎设备还可以被配置为当处理第一SNL指令时响应于检测到数据库为满，来选择性地阻止第二SNL指令的处理作为第二搜索和搜索指令。