公开(公告)号：US09188650B2

公开(公告)日：2015-11-17

申请号：US14245641

申请日：2014-04-04

申请人： Headway Technologies, Inc.

发明人： Yuchen Zhou ,  Yimin Guo

IPC分类号： G11B5/39 ,  G01R33/09 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/32 ,  H01F41/30

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/091 ,  G11B5/3906 ,  G11B5/3925 ,  G11B5/398 ,  G11B2005/3996 ,  H01F10/325 ,  H01F10/3254 ,  H01F41/302

摘要： A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. The side stripes of soft magnetic material absorb external field flux and concentrate the flux to flow into the sensor's edges to promote larger MR sensor magnetization rotation. Side stripes may be located in the plane of the free layer a maximum distance of 0.1 microns, above a plane that includes a top surface of the free layer, or below a plane that includes the bottom surface of the magnetic sensor. Edges of each side stripe may be aligned above or below a portion of the magnetic sensor.

摘要翻译： 描述了具有增加的灵敏度，较低噪声和改善的频率响应的磁传感器。 传感器的自由层是带状的，并且通过磁软，高磁导率材料的带在每个长边缘处紧密地侧接。 软磁材料的侧面条纹吸收外部磁场通量，并将助焊剂浓缩到流入传感器的边缘，以促进较大的MR传感器磁化旋转。 侧条可以位于自由层的平面中，最大距离为0.1微米，在包括自由层的顶表面的平面之上，或者在包括磁传感器的底表面的平面之下。 每个侧条纹的边缘可以在磁传感器的一部分上方或下方对准。

公开(公告)号：US09034662B2

公开(公告)日：2015-05-19

申请号：US14244923

申请日：2014-04-04

申请人： Headway Technologies, Inc.

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC分类号： H01L43/12 ,  G11B5/39 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/30 ,  H01L29/66 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02 ,  H01F1/40 ,  H01F10/193 ,  H01F10/32 ,  H01L29/82

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3929 ,  G11B5/3967 ,  H01F1/401 ,  H01F10/193 ,  H01F10/1936 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01L29/66984 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129

摘要： The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the magnetic layers such as an inner pinned (AP1) layer, spin injection layer (SIL), field generation layer (FGL), and a free layer. An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi. The MREL may further comprise a first conductive layer that contacts a bottom surface of the semiconductor or semimetal layer, and a second conductive layer that contacts a top surface of the semiconductor or semimetal layer.

摘要翻译： 通过将一个或多个磁阻增强层（MREL）插入到一个或多个磁性层的中心附近，例如内部固定（AP1）层，自旋注入层（SIL） ，场生成层（FGL）和自由层。 MREL是低带隙的层，诸如ZnO的高电子迁移率半导体或诸如Bi的半金属。 MREL还可以包括接触半导体或半金属层的底表面的第一导电层和接触半导体或半金属层的顶表面的第二导电层。

公开(公告)号：US09761254B2

公开(公告)日：2017-09-12

申请号：US15363168

申请日：2016-11-29

申请人： Headway Technologies, Inc.

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Zhi Gang Bai

IPC分类号： G11B5/39 ,  G11B5/11 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  H01F10/30 ,  H01F10/32 ,  H01F41/30 ,  B82Y40/00 ,  H01L43/02 ,  H01L43/08

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/02 ,  H01L43/08

摘要： A MR sensor is disclosed that has a free layer (FL) with perpendicular magnetic anisotropy (PMA), which eliminates the need for an adjacent hard bias structure to stabilize free layer magnetization, and minimizes shield-FL interactions. In a TMR embodiment, a seed layer, free layer, junction layer, reference layer, and pinning layer are sequentially formed on a bottom shield. After forming a sensor sidewall that stops in the seed layer or on the bottom shield, a conformal insulation layer is deposited. Thereafter, a top shield is formed on the insulation layer and includes side shields that are separated from the FL by a narrow read gap. The sensor is scalable to widths

公开(公告)号：US09558765B2

公开(公告)日：2017-01-31

申请号：US15162059

申请日：2016-05-23

申请人： Headway Technologies, Inc.

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC分类号： G11B5/235 ,  G11B5/31 ,  G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/12 ,  G11B5/127 ,  H01F41/30 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  B82Y40/00 ,  G11B5/33 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01F1/057 ,  G11B5/00 ,  H01F10/32

CPC分类号： G11B5/235 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3153 ,  G11B5/33 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/0024 ,  G11B2005/3996 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01F1/0579 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/305 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/115

摘要： A spin transfer oscillator (STO) with a seed/FGL/spacer/SIL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)YFeCo laminated field generation layer (FGL). The spin injection layer (SIL) may be laminated with a (A1/A2)XFeCo configuration. The FeCo layer in the SIL is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The (A1/A2)Y laminate (y=5 to 30) in the FGL may be exchange coupled with a high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO is typically formed between a main pole and trailing shield in a write head.

摘要翻译： 公开了具有种子/ FGL /间隔物/ SIL /封盖结构的自旋转移振荡器（STO），其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）织构的金属层，以增强垂直磁各向异性 （A1 / A2）YFeCo层叠场产生层（FGL）中的（PMA）。 自旋注入层（SIL）可以层叠有（A1 / A2）XFeCo构型。 SIL中的FeCo层与（A1 / A2）X层叠体交换（x为5〜50），以提高坚固性。 FGL中的（A1 / A2）Y层叠体（y = 5〜30）可以与高B层交换耦合，以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO通常形成在写入头中的主极和后屏蔽之间。

公开(公告)号：US09274184B2

公开(公告)日：2016-03-01

申请号：US14245635

申请日：2014-04-04

申请人： Headway Technologies, Inc.

发明人： Yuchen Zhou ,  Yimin Guo

IPC分类号： G11B5/39 ,  G01R33/09 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/32 ,  H01F41/30

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/091 ,  G11B5/3906 ,  G11B5/3925 ,  G11B5/398 ,  G11B2005/3996 ,  H01F10/325 ,  H01F10/3254 ,  H01F41/302

摘要： A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. The side stripes of soft magnetic material absorb external field flux and concentrate the flux to flow into the sensor's edges to promote larger MR sensor magnetization rotation. The free layer may be deposited simultaneously with the soft magnetic layer when they are aligned in the same plane. When the flux absorbing stripes are positioned above or below the MR sensor, then the free layer and flux absorbing stripes are deposited in separate steps.

摘要翻译： 描述了具有增加的灵敏度，较低噪声和改善的频率响应的磁传感器。 传感器的自由层是带状的，并且通过磁软，高磁导率材料的带在每个长边缘处紧密地侧接。 软磁材料的侧面条纹吸收外部磁场通量，并将助焊剂浓缩到流入传感器的边缘，以促进较大的MR传感器磁化旋转。 当它们在同一平面中对准时，自由层可以与软磁层同时沉积。 当磁通吸收条被定位在MR传感器的上方或下方时，则自由层和通量吸收条被分开沉积。

公开(公告)号：US09208801B2

公开(公告)日：2015-12-08

申请号：US13645958

申请日：2012-10-05

申请人： Headway Technologies, Inc.

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC分类号： H01F10/32 ,  G11B5/33 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/12 ,  G11B5/127 ,  G11B5/31 ,  G11B5/39 ,  H01F41/30 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  B82Y40/00 ,  H01F1/057 ,  G11B5/00

CPC分类号： G11B5/235 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3153 ,  G11B5/33 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/0024 ,  G11B2005/3996 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01F1/0579 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/305 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/115

摘要： A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.

摘要翻译： 公开了具有种子/ SIL /间隔物/ FGL /覆盖构型的自旋转移振荡器，其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）结构的金属层，以增强垂直磁各向异性（PMA） 在叠层（A1 / A2）X层叠自旋注入层（SIL）中。 场发生层（FGL）由高Bs材料如FeCo制成。 或者，STO具有种子/ FGL /间隔物/ SIL /覆盖配置。 SIL可以包括与（A1 / A2）X层压体交换耦合的FeCo层（x为5至50）以改善坚固性。 FGL可以包括与高Bs层交换耦合的（A1 / A2）Y层叠体（y = 5〜30），以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO可以形成在写入头中的主极和后屏蔽之间。

公开(公告)号：US09147834B2

公开(公告)日：2015-09-29

申请号：US14244924

申请日：2014-04-04

申请人： Headway Technologies, Inc.

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC分类号： H01L43/02 ,  H01L43/12 ,  G11B5/39 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/30 ,  H01L29/66 ,  H01L43/10 ,  H01L43/08 ,  H01F1/40 ,  H01F10/193 ,  H01F10/32 ,  H01L29/82

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3929 ,  G11B5/3967 ,  H01F1/401 ,  H01F10/193 ,  H01F10/1936 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01L29/66984 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129

摘要： The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the magnetic layers such as an inner pinned (AP1) layer, spin injection layer (SIL), field generation layer (FGL), and a free layer. An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi. The MREL may further comprise a first conductive layer that contacts a bottom surface of the semiconductor or semimetal layer, and a second conductive layer that contacts a top surface of the semiconductor or semimetal layer.

公开(公告)号：US20150108594A1

公开(公告)日：2015-04-23

申请号：US14581141

申请日：2014-12-23

申请人： Headway Technologies, Inc.

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Zhigang Bai

IPC分类号： H01L43/02 ,  H01L43/08

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/02 ,  H01L43/08

摘要： A MR sensor is disclosed that has a free layer (FL) with perpendicular magnetic anisotropy (PMA) which eliminates the need for an adjacent hard bias structure to stabilize free layer magnetization and minimizes shield-FL interactions. In a TMR embodiment, a seed layer, free layer, junction layer, reference layer, and pinning layer are sequentially formed on a bottom shield. After patterning, a conformal insulation layer is formed along the sensor sidewall. Thereafter, a top shield is formed on the insulation layer and includes side shields that are separated from the FL by a narrow read gap. The sensor is scalable to widths

摘要翻译： 公开了具有垂直磁各向异性（PMA）的自由层（FL）的MR传感器，其不需要相邻的硬偏置结构来稳定自由层磁化并使屏蔽-FL相互作用最小化。 在TMR实施例中，种子层，自由层，结层，参考层和钉扎层依次形成在底部屏蔽上。 在图案化之后，沿传感器侧壁形成保形绝缘层。 此后，在绝缘层上形成顶部屏蔽，并且包括通过狭窄的读取间隙与FL分离的侧面屏蔽。 当PMA大于FL自扫描场时，传感器可缩放到宽度<50 nm。 有效偏置场对传感器纵横比相当不敏感，这使得高条纹和窄宽度传感器成为高RA TMR配置的可行方法。 传感器侧壁可以延伸到种子层或底部屏蔽中。

公开(公告)号：US08988822B2

公开(公告)日：2015-03-24

申请号：US13645947

申请日：2012-10-05

申请人： Headway Technologies, Inc.

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC分类号： G11B5/235 ,  G11B5/31 ,  G11B5/39 ,  G11B5/127 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/12 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  B82Y40/00 ,  G11B5/00

CPC分类号： G11B5/235 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3153 ,  G11B5/33 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/0024 ,  G11B2005/3996 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01F1/0579 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/305 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/115

摘要： A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.

摘要翻译： 公开了具有种子/ SIL /间隔物/ FGL /覆盖构型的自旋转移振荡器，其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）结构的金属层，以增强垂直磁各向异性（PMA） 在叠层（A1 / A2）X层叠自旋注入层（SIL）中。 场发生层（FGL）由高Bs材料如FeCo制成。 或者，STO具有种子/ FGL /间隔物/ SIL /覆盖配置。 SIL可以包括与（A1 / A2）X层压体交换耦合的FeCo层（x为5至50）以改善坚固性。 FGL可以包括与高Bs层交换耦合的（A1 / A2）Y层叠体（y = 5〜30），以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO可以形成在写入头中的主极和后屏蔽之间。

公开(公告)号：US08986556B2

公开(公告)日：2015-03-24

申请号：US13758561

申请日：2013-02-04

申请人： Headway Technologies, Inc.

发明人： Xuhui Jin ,  Yuchen Zhou ,  Kenichi Takano ,  Joe Smyth

IPC分类号： H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  G11B5/84 ,  B82Y10/00 ,  G11B5/31 ,  G11B5/00

CPC分类号： G11B5/84 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/314 ,  G11B2005/0021

摘要： A TAMR (Thermally Assisted Magnetic Recording) write head is formed with a narrow pole tip, a trailing edge magnetic shield and, optionally, a plasmon shield. The narrow pole tipped write head uses the energy of laser generated edge plasmons, formed in a plasmon generating layer, to locally heat a PMR magnetic recording medium slightly below its Curie temperature, Tc. When combined with the effects of the narrow tip, this local heating to a temperature below Tc is sufficient to create good transitions and narrow track widths in the magnetic medium. The write head is capable of writing effectively on state-of-the-art PMR recording media having Hk of 20 kOe or more.

摘要翻译： TAMR（热辅助磁记录）写头形成有窄极尖，后缘磁屏蔽和任选的等离子体屏蔽。 窄极头写头使用在等离子体发生层中形成的激光产生的边缘等离子体激元的能量来局部加热略低于其居里温度Tc的PMR磁记录介质。 当与窄尖端的作用相结合时，这种局部加热到低于Tc的温度足以在磁性介质中产生良好的转变和窄的轨道宽度。 写头能够有效地写入具有20kOe以上Hk的最先进的PMR记录介质。