公开(公告)号：US5434277A

公开(公告)日：1995-07-18

申请号：US22962

申请日：1993-04-02

申请人： Herng-Dar Hwu ,  Hung Y. Hsu ,  Jian-Hong Chen ,  Shu-Fang Jiang

发明人： Herng-Dar Hwu ,  Hung Y. Hsu ,  Jian-Hong Chen ,  Shu-Fang Jiang

IPC分类号： C07C51/41 ,  C07F19/00

CPC分类号： C07C51/412

摘要： A method for the preparation of metallic salts of fatty acids comprising the steps of: (a) reacting alkali hydroxide with a fatty acid in a saponification reaction to form an alkali soap; (b) reacting the alkali soap with an aqueous metallic salt solution in a double decomposition reaction to cause the production of metallic fatty acid salt; (c) performing at least one cycle of an alternating alkalinization-acidization reaction by adding an aqueous alkali hydroxide solution to the metallic fatty acid salt to raise the solution pH, followed by adding an acidic aqueous salt solution contain the same metal ions to lower the solution pH. High purity metallic salts of fatty acids can be obtained without a solvent washing step and the metallic fatty acid salts prepared from this invention can be effectively used as photolyzing agent to initiate and/or accelerate the photo-degradation of plastics.

摘要翻译： 一种制备脂肪酸金属盐的方法，包括以下步骤：（a）在皂化反应中使碱金属氢氧化物与脂肪酸反应形成碱性皂; （b）在双重分解反应中使碱性皂与金属盐水溶液反应，以产生金属脂肪酸盐; （c）通过向金属脂肪酸盐中加入碱金属氢氧化物水溶液进行交替碱化 - 酸化反应的至少一个循环以提高溶液的pH，然后加入含有相同金属离子的酸性盐水溶液以降低 溶液pH值。 不用溶剂洗涤步骤即可获得高纯度的脂肪酸金属盐，并且由本发明制备的金属脂肪酸盐可有效地用作光引发剂以引发和/或加速塑料的光降解。

公开(公告)号：US5308897A

公开(公告)日：1994-05-03

申请号：US4548

申请日：1993-01-14

申请人： Hung-Yuan Hsu ,  Shu-Chieh Liuo ,  Shu-Fang Jiang ,  Jian-Hong Chen ,  Ho-May Lin ,  Herng-Dar Hwu ,  Muh-Lan Chen ,  Mao-Song Lee ,  Teh Hu

发明人： Hung-Yuan Hsu ,  Shu-Chieh Liuo ,  Shu-Fang Jiang ,  Jian-Hong Chen ,  Ho-May Lin ,  Herng-Dar Hwu ,  Muh-Lan Chen ,  Mao-Song Lee ,  Teh Hu

IPC分类号： C08K5/14 ,  C08L3/02 ,  C08L101/00 ,  C08L3/00

CPC分类号： C08K5/14 ,  C08L101/00 ,  C08L2201/06 ,  C08L3/02

摘要： A composition of matter including a polymeric material which is either a plastic having carbon to carbon linkages or a binary blend of the plastic and starch, in which the plastic is at least 25% by weight of the binary blend; and an organic peracid compound dispersed in the polymeric material, the quantity of the peracid compound being 0.1 to 10% by weight of the polymeric material.

摘要翻译： 一种物质组合物，其包括聚合材料，其是具有碳 - 碳键的塑料或塑料和淀粉的二元共混物，其中塑料是二元共混物的至少25重量％ 和分散在聚合物材料中的有机过酸化合物，过酸化合物的量为聚合物材料的0.1-10重量％。

公开(公告)号：US20130019353A1

公开(公告)日：2013-01-17

申请号：US13545647

申请日：2012-07-10

申请人： Bernard HaoChih LIU ,  Fang-Yi Liao ,  Jian-Hong Chen

发明人： Bernard HaoChih LIU ,  Fang-Yi Liao ,  Jian-Hong Chen

IPC分类号： G01Q60/58

CPC分类号： G01Q60/38 ,  G01Q60/40 ,  G01Q60/42 ,  G01Q60/58

摘要： A thermal probe includes a support element, a conductive pattern and a tip. The support element has a slit or a through hole and has a first surface and a second surface which is opposite to the first surface. The conductive pattern is disposed at the first surface. The tip has a base and a pinpoint. The pinpoint is disposed at the base and passes through the slit or the through hole and highlights from the first surface. The base is connected with the second surface. The tip of the thermal probe of the invention can be replaced, and user can choose the best combination of the tip, conductive pattern and support element according to their needs.

摘要翻译： 热探针包括支撑元件，导电图案和尖端。 支撑元件具有狭缝或通孔，并且具有与第一表面相对的第一表面和第二表面。 导电图案设置在第一表面。 尖端具有基部和精确点。 精确位置设置在基座处并穿过狭缝或通孔并从第一表面突出。 基座与第二表面相连。 可以更换本发明的热探针的尖端，用户可以根据需要选择尖端，导电图案和支撑元件的最佳组合。

公开(公告)号：US20110214031A1

公开(公告)日：2011-09-01

申请号：US12714467

申请日：2010-02-27

申请人： Yao-Tsu Chang ,  Ming-Haw Jing ,  Chong-Dao Lee ,  Jian-Hong Chen ,  Zih-Heng Chen

发明人： Yao-Tsu Chang ,  Ming-Haw Jing ,  Chong-Dao Lee ,  Jian-Hong Chen ,  Zih-Heng Chen

IPC分类号： H03M13/29 ,  G06F11/10 ,  H03M13/07

CPC分类号： H03M13/1575

摘要： An error correction decoder includes a syndrome generator and an error correction value generator. The syndrome generator is operable to generate a plurality of syndromes based upon a received signal generated according to a generator polynomial. The error correction value generator is operable to generate a plurality of product values. Each of the product values is generated for one of the syndromes based upon a respective power of the roots of the generator polynomial. The respective power is determined based upon a respective index corresponding to one of the syndromes to be considered and unit positions of the received signal. The error correction value generator is further operable to generate an error correction value according to the product values, and to provide an error correcting device coupled thereto with the error correction value for correcting an error of the received signal.

摘要翻译： 纠错解码器包括校正子发生器和纠错值发生器。 校正子发生器可操作以基于根据生成多项式生成的接收信号来生成多个校正子。 误差校正值发生器可操作以产生多个乘积值。 基于生成多项式的根的相应功率，针对其中一个综合征生成每个产品值。 相应的功率是根据与要考虑的综合症之一相对应的相应索引和接收信号的单元位置来确定的。 误差校正值发生器还可用于根据乘积值产生误差校正值，并提供与其一起耦合的纠错装置和用于校正接收信号误差的纠错值。

公开(公告)号：US20070190778A1

公开(公告)日：2007-08-16

申请号：US11352815

申请日：2006-02-13

申请人： Jen-Chieh Shih ,  Bang-Ching Ho ,  Jian-Hong Chen

发明人： Jen-Chieh Shih ,  Bang-Ching Ho ,  Jian-Hong Chen

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808

摘要： A method for forming a dual damascene structure in a semiconductor device manufacturing process where via plugs which may include a thickness portion of a plug filling material overlying the process surface is formed by diffusing an acid into a plug filling material layer followed by reacting the acid with the plug filling material layer to form a soluble portion which is then removed using a solvent. A remaining portion of the plug filling material is cured and a BARC layer may be formed over the process surface prior to patterning trenches in an overlying resist layer and forming a dual damascene structure.

摘要翻译： 一种用于在半导体器件制造工艺中形成双镶嵌结构的方法，其中可以包括覆盖在工艺表面上的塞子填充材料的厚度部分的通孔塞通过将酸扩散到塞填充材料层中，然后使酸与 塞子填充材料层以形成可溶部分，然后使用溶剂除去。 塞子填充材料的剩余部分被固化，并且可以在上覆的抗蚀剂层中的沟槽图案形成双重镶嵌结构之前，在工艺表面上形成BARC层。

公开(公告)号：US20060154185A1

公开(公告)日：2006-07-13

申请号：US11033647

申请日：2005-01-11

申请人： Bang-Chein Ho ,  Jian-Hong Chen

发明人： Bang-Chein Ho ,  Jian-Hong Chen

IPC分类号： G03F7/40

CPC分类号： G03F7/40

摘要： A method for reducing a critical dimension of a photoresist pattern while improving a line spacing between distal end portions of pattern lines wherein the method includes providing a substrate including an overlying resist; exposing the resist to an activating light source; baking the resist in a first baking process followed by developing the resist in a first development process to form a first resist pattern; then baking the first resist pattern in a second baking process followed by developing the first resist pattern in a second development process to form a second resist pattern having reduced dimensions; and, then dry trimming the second resist pattern to form a final resist pattern with reduced dimensions compared to the second resist pattern.

摘要翻译： 一种降低光致抗蚀剂图案的临界尺寸的方法，同时改善图案线的远端部分之间的线间距，其中该方法包括提供包括上覆抗蚀剂的基底; 将抗蚀剂暴露于活化光源; 在第一烘烤过程中烘烤抗蚀剂，然后在第一显影过程中显影抗蚀剂以形成第一抗蚀剂图案; 然后在第二烘烤过程中烘烤第一抗蚀剂图案，随后在第二显影过程中显影第一抗蚀剂图案，以形成尺寸减小的第二抗蚀剂图案; 然后干燥修整第二抗蚀剂图案以形成与第二抗蚀剂图案相比尺寸减小的最终抗蚀剂图案。

公开(公告)号：US07033735B2

公开(公告)日：2006-04-25

申请号：US10714998

申请日：2003-11-17

申请人： Bang-Chien Ho ,  Jian-Hong Chen

发明人： Bang-Chien Ho ,  Jian-Hong Chen

IPC分类号： G03C1/735

CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/038

摘要： A method is described for reducing the space width of holes in a first resist pattern and simultaneously removing unwanted holes to change the pattern density in the resulting second pattern. This technique provides holes with a uniform space width as small as 100 nm or less that is independent of pattern density in the second pattern. A positive resist is patterned to form holes with a first pattern density and first space width. A water soluble negative resist is coated over the first resist and selectively exposed to form a second patterned layer consisting of water insoluble plugs in unwanted holes in the first pattern and a thin water insoluble layer on the first resist pattern in unexposed portions. The plugs may form dense and isolated hole arrays while the thin insoluble layer reduces space width to the same extent in remaining holes in the second pattern.

公开(公告)号：US20050014362A1

公开(公告)日：2005-01-20

申请号：US10915633

申请日：2004-08-10

申请人： Bang-Chien Ho ,  Jian-Hong Chen ,  Tsang-Jiuh Wu ,  Li-Te Lin ,  Li-Chih Chao ,  Hua-Tai Lin ,  Shyue-Sheng Lu

发明人： Bang-Chien Ho ,  Jian-Hong Chen ,  Tsang-Jiuh Wu ,  Li-Te Lin ,  Li-Chih Chao ,  Hua-Tai Lin ,  Shyue-Sheng Lu

IPC分类号： H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76808

摘要： A method of fabricating semiconductor devices using dual damascene processes to form plugs in the via holes composed of various high etch materials and bottom anti-reflection coating (BARC) materials. After via hole etch, a layer of high etch rate plug material is spin coated to fill the via holes. Next, a layer of photoresist is applied. The photoresist is then exposed through a mask and developed to form an etch opening. Using the remaining photoresist as an etch mask and with a bottom anti-reflection coating (BARC) as protection, the oxide or low k layer is etched to form subsequent wiring. The etch step is known as a damascene etch step. The remaining photoresist is removed and the trench/via openings are filled with metal forming inlaid metal interconnect wiring and contact vias.

摘要翻译： 使用双镶嵌工艺制造半导体器件的方法来在由各种高蚀刻材料和底部抗反射涂层（BARC）材料构成的通孔中形成插塞。 在通孔蚀刻之后，旋涂一层高蚀刻速率的塞材料以填充通孔。 接下来，施加一层光致抗蚀剂。 然后将光致抗蚀剂通过掩模曝光并显影以形成蚀刻开口。 使用剩余的光致抗蚀剂作为蚀刻掩模和底部防反射涂层（BARC）作为保护，氧化物或低k层被蚀刻以形成后续布线。 蚀刻步骤被称为镶嵌蚀刻步骤。 去除剩余的光致抗蚀剂，并且通过金属形成金属互连布线和接触通孔填充沟槽/通孔开口。

公开(公告)号：US08296634B2

公开(公告)日：2012-10-23

申请号：US12714467

申请日：2010-02-27

申请人： Yao-Tsu Chang ,  Ming-Haw Jing ,  Chong-Dao Lee ,  Jian-Hong Chen ,  Zih-Heng Chen

发明人： Yao-Tsu Chang ,  Ming-Haw Jing ,  Chong-Dao Lee ,  Jian-Hong Chen ,  Zih-Heng Chen

IPC分类号： H03M13/00 ,  H03M13/03

CPC分类号： H03M13/1575

摘要： An error correction decoder includes a syndrome generator and an error correction value generator. The syndrome generator is operable to generate a plurality of syndromes based upon a received signal generated according to a generator polynomial. The error correction value generator is operable to generate a plurality of product values. Each of the product values is generated for one of the syndromes based upon a respective power of the roots of the generator polynomial. The respective power is determined based upon a respective index corresponding to one of the syndromes to be considered and unit positions of the received signal. The error correction value generator is further operable to generate an error correction value according to the product values, and to provide an error correcting device coupled thereto with the error correction value for correcting an error of the received signal.

摘要翻译： 纠错解码器包括校正子发生器和纠错值发生器。 校正子发生器可操作以基于根据生成多项式生成的接收信号来生成多个校正子。 误差校正值发生器可操作以产生多个乘积值。 基于生成多项式的根的相应功率，针对其中一个综合征生成每个产品值。 相应的功率是根据与要考虑的综合症之一相对应的相应索引和接收信号的单元位置来确定的。 误差校正值发生器还可用于根据乘积值产生误差校正值，并提供与其一起耦合的纠错装置和用于校正接收信号误差的纠错值。

公开(公告)号：US08158335B2

公开(公告)日：2012-04-17

申请号：US12210737

申请日：2008-09-15

申请人： Hsiao-Wei Yeh ,  Ching-Yu Chang ,  Jian-Hong Chen ,  Chih-An Lin

发明人： Hsiao-Wei Yeh ,  Ching-Yu Chang ,  Jian-Hong Chen ,  Chih-An Lin

IPC分类号： G03F7/26

CPC分类号： H01L21/0273 ,  G03F7/0035 ,  G03F7/405 ,  H01L21/3086

摘要： The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.

摘要翻译： 本发明包括光刻方法，包括在衬底上形成包括至少一个开口的第一图案化坚固层。 在第一图案化抗蚀剂层和基底上形成水溶性聚合物层，由此在第一图案化抗蚀剂层和水溶性聚合物层的界面处发生反应。 去除未反应的水溶性聚合物层。 此后，在衬底上形成第二图案化抗蚀剂层，其中第二图案化抗蚀剂层的至少一部分设置在第一图案化抗蚀剂层的至少一个开口内，或者邻接第一图案化抗蚀剂层的至少一部分 。 然后使用第一和第二图案化抗蚀剂层作为掩模蚀刻衬底。