摘要:
An electronic circuit contains groups of flip-flops (12a-c), coupled to data terminals (11a-c) of the circuit and to a functional circuit (10). Each group (12a-c) has a clock input for clocking the flip-flops of the group. Each group (12a-c) can be switched between a shift configuration and a functional configuration, for serially shifting in test data from the data terminals and to function in parallel to supply signals to the functional circuit (10) and/or receive signals from the functional circuit (10) respectively. A test control circuit (16) can be switched between a functional mode, a test shift mode and a test normal mode. The test control circuit (16) is coupled to the groups of flip-flops (12a-c) to switch the groups to the functional configuration in the functional mode and to the shift configuration in the test shift mode. A clock multiplexing circuit (15a-c, 18) has inputs coupled to the data terminals (11a-c) and outputs coupled to clock inputs of the groups (12a-c). The test control circuit (16) is coupled to control the clock multiplexing circuit (15a-c, 18) dependent on the mode assumed by the test control circuit (16). The clock multiplexing circuit (15a-c, 18) is arranged to substitute clock signals from respective ones of the data terminals (11a-c) temporarily at the clock inputs of respective ones of the groups (12a-c) in the test normal mode.
摘要:
The invention relates to an electronic circuit including a sub-module assembly (2) connected to the rest of the circuit, the sub-module assembly including a secret sub-module (4) for performing a function, scan chains; a built-in self test circuit including a pattern generator (5) to apply input signals to the scan chains, and a signature register (6) to check output signals from the scan chains. In order to keep the sub-module secret, the scan chains are not connected to the rest of the circuit.
摘要:
Packaged semiconductor product (2) including a first semiconductor device (4A) and a packaging structure with a protective envelope (6) and a first and second external electrode (8,10). The first semiconductor device (4A) has a first substrate (11A) and is provided with a first passivation layer (12A) and a first electronic structure. The first substrate has a first main surface (14). The first substrate (11A) is embedded in the protective envelope (6) and the first main surface (14) faces a first opening (23) of the protective envelope (6). The first electronic structure has a first and a second contact region (20, 22) for electrically contacting the first electronic structure. The first passivation layer (12A) substantially covers the first main surface (14) and the first electronic structure. The protective envelope (6) extends between the first passivation layer (12A) and the first external electrode (8) towards the first contact region (20).
摘要:
The present invention relates to an integrated circuit (DEC V) for processing a plurality of data samples (P) of a data signal (I), wherein said integrated circuit is associated with a counter (CT) and comprises means (SIGN M) for computing a signature, said counter (CT) being adapted to trigger and stop a computation of a signature of said data signal (I), said signature being recalculated each time a data sample (P) of said data signal is output by said integrated circuit (DEC V). Use: Video decoder in a set-top-box.
摘要:
The present invention relates to a semiconductor device, comprising a semiconductor substrate (102) with a thickness of less than 100 micrometer and with a first substrate side and an opposite second substrate side. A plurality of at least four monolithically integrated Zener or avalanche diodes (164,166,168,170) with a reverse breakdown voltage of less than 20 V are defined in the semiconductor substrate and connected with each other in a series connection. The diodes are defined in a plurality of mutually isolated substrate islands (120,122,124,126) in the semiconductor substrate, at least one diode per substrate island. The substrate islands are laterally surrounded by through-substrate isolations extending from the first to the second substrate side and comprising a filling (128) that electrically isolates a respective substrate island from a respective laterally surrounding area of the semiconductor substrate.
摘要:
The present invention relates to a semiconductor device, comprising a semiconductor substrate (102) with a thickness of less than 100 micrometer and with a first substrate side and an opposite second substrate side. A plurality of at least four monolithically integrated Zener or avalanche diodes (164,166,168,170) with a reverse breakdown voltage of less than 20 V are defined in the semiconductor substrate and connected with each other in a series connection. The diodes are defined in a plurality of mutually isolated substrate islands (120,122,124,126) in the semiconductor substrate, at least one diode per substrate island. The substrate islands are laterally surrounded by through-substrate isolations extending from the first to the second substrate side and comprising a filling (128) that electrically isolates a respective substrate island from a respective laterally surrounding area of the semiconductor substrate.
摘要:
An integrated circuit assembly (ICA) comprises: a digital and/or analog integrated circuit (S1) having a core with input and/or output pins and at least one power supply connection pad (PP) and one ground connection pad (GP) connected to a chosen one of the input and/or output pins and respectively connected to power supply and ground connection zones (MZ1) of a printed circuit board (PCB), and a passive integration substrate (S2) set on top of the digital and/or analog integrated circuit (S1) and comprising i) at least first and second input zones respectively connected to the ground (GP) and power supply (PP) connection pads to, be fed with input ground and supply voltages, ii) input and/or output zones connected to chosen core input and/or output pins, and Ëi) a passive integrated circuit (PIC) connected to the first and second input zones and arranged to feed the substrate input and/or output zones with chosen ground and supply voltages defined from the input ground and supply voltages.
摘要:
Packaged semiconductor product (2) including a first semiconductor device (4A) and a packaging structure with a protective envelope (6) and a first and second external electrode (8,10). The first semiconductor device (4A) has a first substrate (11A) and is provided with a first passivation layer (12A) and a first electronic structure. The first substrate has a first main surface (14). The first substrate (11A) is embedded in the protective envelope (6) and the first main surface (14) faces a first opening (23) of the protective envelope (6). The first electronic structure has a first and a second contact region (20, 22) for electrically contacting the first electronic structure. The first passivation layer (12A) substantially covers the first main surface (14) and the first electronic structure. The protective envelope (6) extends between the first passivation layer (12A) and the first external electrode (8) towards the first contact region (20).
摘要:
An integrated circuit assembly (ICA) comprises: a digital and/or analog integrated circuit (S1) having a core with input and/or output pins and at least one power supply connection pad (PP) and one ground connection pad (GP) connected to a chosen one of the input and/or output pins and respectively connected to power supply and ground connection zones (MZ1) of a printed circuit board (PCB), and a passive integration substrate (S2) set on top of the digital and/or analog integrated circuit (S1) and comprising i) at least first and second input zones respectively connected to the ground (GP) and power supply (PP) connection pads to be fed with input ground and supply voltages, ii) input and/or output zones connected to chosen core input and/or output pins, and Ëi) a passive integrated circuit (PIC) connected to the first and second input zones and arranged to feed the substrate input and/or output zones with chosen ground and supply voltages defined from the input ground and supply voltages.
摘要:
The present invention relates to a system-in-package that comprises an integration substrate with a thickness of less than 100 micrometer and a plurality of through-substrate vias, which have an aspect ratio larger than 5. A first chip is attached to the integration substrate and arranged between the integration substrate and a support, which is suitable for mechanically supporting the integration substrate during processing and handling. The system-in-package can be fabricated according to the invention without a through-substrate-hole etching step. The large aspect ratio implies reduced lateral extensions, which allow increasing the integration density and decreasing lead inductances.