摘要:
Provided is an apparatus for implementing an electro-optical cable distribution network in which a coaxial cable is replaced with an optical cable in order to provide a service integrating broadcast data and communication data by solving a frequency constraint problem in a cable television (CATV) network employing a conventional hybrid-fiber coaxial (HFC) network architecture. The apparatus includes an optical network unit (ONU) which converts a downstream signal received from a system operator (SO) into an optical signal and transmits the optical signal to an optical cable; and an optical cable modem which receives the optical downstream signal from the ONU and converts the received signal into an electrical signal. In addition, the ONU and the optical cable modem control signal quality of an optical path.
摘要:
In a sensor network, a sensor data processing apparatus generates a feature vector identifier table by classifying feature vector identifiers of a plurality of situation information determination reference data to be a reference of situation determination according to a sensor type index and a feature vector identifier set index of the plurality of situation information reference data. When the sensor data processing apparatus receives sensor data, the sensor data processing apparatus generates a feature vector identifier of the sensor data and extracts a sensor type index and a feature vector identifier set index of a feature vector identifier most similar to the feature vector identifier of sensor data with reference to a feature vector identifier table, and generates situation recognition information using the extracted sensor type index and feature vector identifier set index.
摘要:
The present invention relates to a securing piece for securing a thin article to be secured, such as a hand strap (band) to a smartphone device back surface. The present invention involves the formation of a flexible metal securing plate (1) and two facing strap raised holes (3) in the securing plate, and comprised in a part inside each strap raised hole (3) there is an extending securing section (5), and a fastening part (7) is formed in the end of each securing section (5). The present invention is directly used in a back-surface cover of a smartphone device, while it is also possible to use a separate mounting plate (20) formed so as to have securing recesses (50) where the securing sections (5) are inserted and accommodated.
摘要:
Disclosed herein is a power line channel-adaptive communications system and method. The power line channel-adaptive communications system includes a transmitting end, a channel-adaptive controller, and a receiving end. The transmitting end generates an adaptive chirp symbol signal of a preset type for transmission data according to a channel state of the power line, modulates the generated adaptive chirp symbol signal in any one of first and second transmission modes, and transmits the modulated adaptive chirp symbol signal via the power line channel. The channel-adaptive controller controls the type and transmission mode of the adaptive chirp symbol signal. The receiving end restores the transmission data by demodulating the adaptive chirp symbol signal, received via the power line channel, in any one of the first and second transmission modes according to the channel state of the power line.
摘要:
There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.
摘要:
Provided is a nitride semiconductor light emitting device including p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer formed therebetween. A contact layer is positioned between the p-type nitride semiconductor layer and a p-side electrode. The contact layer includes a first p-type nitride layer having a first impurity concentration to form ohmic contact with the p-side electrode and a second p-type nitride layer having a second impurity concentration, the second impurity concentration having a concentration lower than the first impurity concentration.
摘要:
There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.
摘要:
A dielectric layer, an MIM capacitor, a method of manufacturing the dielectric layer and a method of manufacturing the MIM capacitor. The method of manufacturing the dielectric layer includes chemically reacting a metal source with different amounts of an oxidizing agent based on the cycle of the chemical reactions in order to control leakage characteristics of the dielectric layer, the electrical characteristics of the dielectric layer, and the dielectric characteristics of the dielectric layer.