公开(公告)号：US06803325B2

公开(公告)日：2004-10-12

申请号：US10120713

申请日：2002-04-10

申请人： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

发明人： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

IPC分类号： H01L2131

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31629

摘要： A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.

摘要翻译： 在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。 使用硅烷（SiH 4），四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体。 SiH4，SiF4和O2反应形成FSG。 引入Ar来促进气体分解。 所有四种气体都用于沉积大部分FSG膜。 在沉积FSG膜的界面部分期间不使用SiH4。 如果要将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4的共同作用倾向于减少SiF4在大部分沉积过程中的破坏作用。 通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中较少的氢被引入到膜中，并且改善了覆盖或下面的氮化硅的粘合性。

公开(公告)号：US06410457B1

公开(公告)日：2002-06-25

申请号：US09569744

申请日：2000-05-11

申请人： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

发明人： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

IPC分类号： H01L2131

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31629

摘要： A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.

摘要翻译： 在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。 使用硅烷（SiH 4），四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体。 SiH4，SiF4和O2反应形成FSG。 引入Ar来促进气体分解。 所有四种气体都用于沉积大部分FSG膜。 在沉积FSG膜的界面部分期间不使用SiH4。 如果要将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4的共同作用倾向于减少SiF4在大部分沉积过程中的破坏作用。 通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中较少的氢被引入到膜中，并且改善了覆盖或下面的氮化硅的粘合性。

公开(公告)号：US06413871B1

公开(公告)日：2002-07-02

申请号：US09337983

申请日：1999-06-22

申请人： Hichem M'Saad ,  Derek R. Witty ,  Manoj Vellaikal ,  Lin Zhang ,  Yaxin Wang

发明人： Hichem M'Saad ,  Derek R. Witty ,  Manoj Vellaikal ,  Lin Zhang ,  Yaxin Wang

IPC分类号： H01L213105

摘要： A film of fluorine-doped silicon glass (“FSG”) is exposed to a nitrogen-containing plasma to nitride a portion of the FSG film. In one embodiment, the FSG film is chemically-mechanically polished prior to nitriding. The nitriding process is believed to scavenge moisture and free fluorine from the FSG film. The plasma can heat the FSG film to about 400° C. for about one minute to incorporate about 0.4 atomic percent nitrogen to a depth of nearly a micron. Thus, the nitriding process can passivate the FSG film deeper than a via depth.

公开(公告)号：US07659184B2

公开(公告)日：2010-02-09

申请号：US12072495

申请日：2008-02-25

申请人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/20

CPC分类号： H01J37/32477 ,  H01J37/32412 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/16

摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

摘要翻译： 在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。 这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。 在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

公开(公告)号：US20090280628A1

公开(公告)日：2009-11-12

申请号：US12503697

申请日：2009-07-15

申请人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/26

CPC分类号： H01J37/32477 ,  H01J37/32412 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/16

摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

摘要翻译： 在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。 这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。 在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

公开(公告)号：US07329586B2

公开(公告)日：2008-02-12

申请号：US11166357

申请日：2005-06-24

申请人： Manoj Vellaikal ,  Hemant P. Mungekar ,  Young S. Lee ,  Yasutoshi Okuno ,  Hiroshi Yuasa

发明人： Manoj Vellaikal ,  Hemant P. Mungekar ,  Young S. Lee ,  Yasutoshi Okuno ,  Hiroshi Yuasa

IPC分类号： H01L21/76

CPC分类号： H01L21/31612 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274

摘要： Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are provided to the substrate processing chamber. A first high-density plasma is formed from the flows of first deposition gases to deposit a first portion of the film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components until after the gap has closed. A sufficient part of the first portion of the film is etched back to reopen the gap. Flows of second precursor deposition gases are provided to the substrate processing chamber. A second high-density plasma is formed from the flows of second precursor deposition gases to deposit a second portion of the film over the substrate and within the reopened gap with a second deposition process that has simultaneous deposition and sputtering components.

摘要翻译： 方法在设置在基板处理室中的基板上沉积膜。 基板在相邻的凸起表面之间形成间隙。 将第一前体沉积气体的流动提供给基板处理室。 由第一沉积气体流形成第一高密度等离子体，以在第一沉积工艺和第二沉积工艺之后，在第一沉积工艺之后在膜上沉积薄膜的第一部分，直到间隙闭合为止。 将膜的第一部分的足够部分回蚀刻以重新打开间隙。 向基板处理室提供第二前体沉积气体的流动。 第二高密度等离子体由第二前体沉积气体的流形成，以便在具有同时沉积和溅射部件的第二沉积工艺的基础上沉积薄膜的第二部分并且在重新打开的间隙内。

公开(公告)号：US07229931B2

公开(公告)日：2007-06-12

申请号：US10870232

申请日：2004-06-16

申请人： Hemant P. Mungekar ,  Young S Lee ,  Manoj Vellaikal ,  Karen Greig ,  Bikram Kapoor

发明人： Hemant P. Mungekar ,  Young S Lee ,  Manoj Vellaikal ,  Karen Greig ,  Bikram Kapoor

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02164 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/505 ,  H01L21/02274 ,  H01L21/31612

摘要： Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 1011 ions/cm3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 1011 ions/cm3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.

摘要翻译： 提供了用于在设置在基板处理室中的基板上沉积氧化硅膜的方法。 基板在相邻的凸起表面之间形成间隙。 具有含硅气体，含氧气体和流动气体的工艺气体流入基板处理室。 将流体气体以至少500sccm的流量引入基板处理室。 形成等离子体，其具有距工艺气体至少10×10 11 / cm 3以上的离子密度，以将氧化硅膜的第一部分沉积在衬底上并且进入 差距。 此后，将沉积的第一部分暴露于具有至少10×10 11 / cm 3以上的氧等离子体。 此后，氧化硅膜的第二部分沉积在衬底上并进入间隙。

公开(公告)号：US08501605B2

公开(公告)日：2013-08-06

申请号：US13188824

申请日：2011-07-22

申请人： Kartik Santhanam ,  Martin A. Hilkene ,  Manoj Vellaikal ,  Mark R. Lee ,  Matthew D. Scotney-Castle ,  Peter I. Porshnev

发明人： Kartik Santhanam ,  Martin A. Hilkene ,  Manoj Vellaikal ,  Mark R. Lee ,  Matthew D. Scotney-Castle ,  Peter I. Porshnev

IPC分类号： H01L21/22 ,  H01L21/38

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01J37/32623 ,  H01J37/32669 ,  H01L21/324

摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of doping a substrate may include forming a dopant region on a substrate by implanting one or more dopant elements into the dopant region of the substrate using a plasma doping process; forming a cap layer atop the dopant region; annealing the dopant region after forming the cap layer; and removing the cap layer after annealing the dopant region.

摘要翻译： 本文提供了用于处理衬底的方法和设备。 在一些实施例中，掺杂衬底的方法可以包括通过使用等离子体掺杂工艺将一个或多个掺杂剂元素注入到衬底的掺杂剂区域中在衬底上形成掺杂剂区域; 在掺杂剂区域的顶部形成帽层; 在形成盖层之后退火掺杂剂区域; 并且在退火掺杂剂区域之后去除覆盖层。

公开(公告)号：US20120302048A1

公开(公告)日：2012-11-29

申请号：US13461476

申请日：2012-05-01

申请人： Kartik Santhanam ,  Yen B. Ta ,  Matthew D. Scotney-Castle ,  Manoj Vellaikal ,  Martin A. Hilkene ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： Kartik Santhanam ,  Yen B. Ta ,  Matthew D. Scotney-Castle ,  Manoj Vellaikal ,  Martin A. Hilkene ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/265

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01L21/32155

摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, flowing a gas mixture including a hydride dopant gas and a fluorine-containing dopant gas into the processing chamber, wherein the hydride dopant gas comprises P-type hydride dopant gas, N-type hydride dopant gas, or a combination thereof, and the fluorine-containing dopant gas comprises a P-type or N-type dopant atom, generating a plasma from the gas mixture, and co-implanting ions from the gas mixture into a surface of the substrate.

摘要翻译： 提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。 在一个实施例中，通过等离子体浸入离子注入工艺将离子注入衬底的方法包括将衬底提供到处理室中，将包括氢化物掺杂剂气体和含氟掺杂剂气体的气体混合物流入处理室，其中 氢化物掺杂剂气体包括P型氢化物掺杂气体，N型氢化物掺杂气体或其组合，并且含氟掺杂剂气体包括P型或N型掺杂剂原子，从气体混合物产生等离子体 并且将来自气体混合物的离子共注入到衬底的表面中。

公开(公告)号：US20120289036A1

公开(公告)日：2012-11-15

申请号：US13449180

申请日：2012-04-17

申请人： Kartik Santhanam ,  Manoj Vellaikal ,  Yen B. Ta ,  Matthew D. Scotney-Castle ,  Peter I. Porshnev

发明人： Kartik Santhanam ,  Manoj Vellaikal ,  Yen B. Ta ,  Matthew D. Scotney-Castle ,  Peter I. Porshnev

IPC分类号： H01L21/265

CPC分类号： H01J37/32412 ,  H01L21/2236

摘要： The invention generally relates to pre-implant and post-implant treatments to promote the retention of dopants near the surface of an implanted substrate. The pre-implant treatments include forming a plasma from an inert gas and implanting the inert gas into the substrate to render an upper portion of the substrate amorphous. The post-implant treatment includes forming a passivation layer on the upper surface of the substrate after doping the substrate in order to retain the dopant during a subsequent activation anneal.

摘要翻译： 本发明一般涉及植入前和植入后处理以促进植入的基底表面附近的掺杂剂的保留。 植入物前处理包括从惰性气体形成等离子体并将惰性气体注入衬底中以使衬底的上部无定形。 植入后处理包括在掺杂衬底之后在衬底的上表面上形成钝化层，以便在随后的激活退火期间保留掺杂剂。