公开(公告)号：US06410457B1

公开(公告)日：2002-06-25

申请号：US09569744

申请日：2000-05-11

申请人： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

发明人： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

IPC分类号： H01L2131

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31629

摘要： A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.

摘要翻译： 在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。 使用硅烷（SiH 4），四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体。 SiH4，SiF4和O2反应形成FSG。 引入Ar来促进气体分解。 所有四种气体都用于沉积大部分FSG膜。 在沉积FSG膜的界面部分期间不使用SiH4。 如果要将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4的共同作用倾向于减少SiF4在大部分沉积过程中的破坏作用。 通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中较少的氢被引入到膜中，并且改善了覆盖或下面的氮化硅的粘合性。

公开(公告)号：US06803325B2

公开(公告)日：2004-10-12

申请号：US10120713

申请日：2002-04-10

申请人： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

发明人： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

IPC分类号： H01L2131

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31629

摘要： A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.

摘要翻译： 在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。 使用硅烷（SiH 4），四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体。 SiH4，SiF4和O2反应形成FSG。 引入Ar来促进气体分解。 所有四种气体都用于沉积大部分FSG膜。 在沉积FSG膜的界面部分期间不使用SiH4。 如果要将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4的共同作用倾向于减少SiF4在大部分沉积过程中的破坏作用。 通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中较少的氢被引入到膜中，并且改善了覆盖或下面的氮化硅的粘合性。

公开(公告)号：US06521546B1

公开(公告)日：2003-02-18

申请号：US09593851

申请日：2000-06-14

申请人： Michael Barnes ,  Hichem M'Saad ,  Huong Thanh Nguyen ,  Farhad Moghadam

发明人： Michael Barnes ,  Hichem M'Saad ,  Huong Thanh Nguyen ,  Farhad Moghadam

IPC分类号： H01L2131

CPC分类号： H01L21/02131 ,  C23C16/30 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3127 ,  H01L21/31629

摘要： A method of forming an integrated circuit using a fluoro-organosilicate layer is disclosed. The fluoro-organosilicate layer is formed by applying an electric field to a gas mixture comprising a fluoro-organosilane compound and an oxidizing gas. The fluoro-organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the fluoro-organosilicate layer is used as a hardmask. In another integrated circuit fabrication process, the fluoro-organosilicate layer is incorporated into a damascene structure.

摘要翻译： 公开了一种使用氟 - 有机硅酸盐层形成集成电路的方法。 通过向包含氟 - 有机硅烷化合物和氧化气体的气体混合物施加电场而形成氟 - 有机硅酸盐层。 氟 - 有机硅酸盐层与集成电路制造工艺兼容。 在一个集成电路制造工艺中，氟 - 有机硅酸盐层用作硬掩模。 在另一集成电路制造工艺中，氟 - 有机硅酸盐层被结合到镶嵌结构中。

公开(公告)号：US06926926B2

公开(公告)日：2005-08-09

申请号：US09953685

申请日：2001-09-10

申请人： Seon-Mee Cho ,  Hichem M'Saad ,  Farhad Moghadam

发明人： Seon-Mee Cho ,  Hichem M'Saad ,  Farhad Moghadam

IPC分类号： C23C16/32 ,  C23C16/507 ,  H01L21/314 ,  C23C16/30

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/507 ,  H01L21/02274 ,  H01L21/314

摘要： A SiC-based layer is deposited on a substrate having an electrical resistivity between about 1 and 100 Ω cm. The substrate is disposed in a process chamber. A gaseous mixture having a silicon-containing gas and a hydrocarbon-containing gas is flowed to the process chamber. A high-density plasma, having an ion density greater than about 1011 ions/cm3 is generated from the plasma. A small electrical bias, between about 0.65 and 1.30 W/cm2, is applied to the substrate. The low bias compensates for an unexpected cooling that results when depositing the SiC-based layer but is low enough that implantation of hydrogen is minimized.

摘要翻译： 将SiC基层沉积在具有约1和100Ωcm之间的电阻率的基底上。 基板设置在处理室中。 具有含硅气体和含烃气体的气体混合物流入处理室。 从等离子体产生具有大于约10 11 /离子/ cm 3的离子密度的高密度等离子体。 将大约0.65和1.30W / cm 2之间的小的电偏压施加到基底上。 低偏压补偿了当沉积SiC基层时产生意外的冷却，但是足够低以使氢的注入最小化。

公开(公告)号：US06667248B2

公开(公告)日：2003-12-23

申请号：US09949414

申请日：2001-09-05

申请人： Hichem M'Saad ,  Chad Peterson ,  Zhuang Li ,  Anchuan Wang ,  Farhad Moghadam

发明人： Hichem M'Saad ,  Chad Peterson ,  Zhuang Li ,  Anchuan Wang ,  Farhad Moghadam

IPC分类号： H01L2131

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629

摘要： A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm2. A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm2 and less than 2.4 W/cm2. The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.

摘要翻译： 提供了一种用于在不影响硬度和压缩应力的机械性能的情况下形成具有较低介电常数的HDP-CVD的氟化硅酸盐玻璃层的方法。 将包含含硅气体，含氧气体和含氟气体的气体混合物提供到处理室。 含氟气体的流量与含硅气体的流量比大于0.65。 通过施加功率密度小于12W / cm 2的源RF功率，从气体混合物产生高密度等离子体。 以大于0.8W / cm 2且小于2.4W / cm 2的偏置功率密度对处理室中的衬底施加偏压。 使用高密度等离子体将氟化硅酸盐玻璃层沉积在基板上。

公开(公告)号：US20060286764A1

公开(公告)日：2006-12-21

申请号：US11422150

申请日：2006-06-05

申请人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh Pham ,  Farhad Moghadam ,  Zhuang Li ,  Padmanabhan Krishnaraj

发明人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh Pham ,  Farhad Moghadam ,  Zhuang Li ,  Padmanabhan Krishnaraj

IPC分类号： H01L21/76

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

公开(公告)号：US20060251800A1

公开(公告)日：2006-11-09

申请号：US11385344

申请日：2006-03-20

申请人： Timothy Weidman ,  Kapila Wijekoon ,  Zhize Zhu ,  Avgerinos Gelatos ,  Amit Khandelwal ,  Arulkumar Shanmugasundram ,  Michael Yang ,  Fang Mei ,  Farhad Moghadam

发明人： Timothy Weidman ,  Kapila Wijekoon ,  Zhize Zhu ,  Avgerinos Gelatos ,  Amit Khandelwal ,  Arulkumar Shanmugasundram ,  Michael Yang ,  Fang Mei ,  Farhad Moghadam

IPC分类号： B05D5/12

CPC分类号： C23C18/1678 ,  B82Y30/00 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/31 ,  C23C18/32 ,  C23C18/34 ,  C23C18/38 ,  C23C18/40 ,  C23C18/48 ,  C25D5/34 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.

公开(公告)号：US20050023694A1

公开(公告)日：2005-02-03

申请号：US10924551

申请日：2004-08-24

申请人： Claes Bjorkman ,  Melissa Yu ,  Hongqing Shan ,  David Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Chapra ,  Gerald Yin ,  Farhad Moghadam ,  Judy Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

发明人： Claes Bjorkman ,  Melissa Yu ,  Hongqing Shan ,  David Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Chapra ,  Gerald Yin ,  Farhad Moghadam ,  Judy Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

IPC分类号： H01L21/302 ,  A01C15/02 ,  A01C17/00 ,  C23C16/40 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/48

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3121 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829

摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

摘要翻译： 沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。 电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。 具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。 用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

公开(公告)号：US20050019494A1

公开(公告)日：2005-01-27

申请号：US10627228

申请日：2003-07-25

申请人： Farhad Moghadam ,  Michael Cox ,  Padmanabhan Krishnaraj ,  Thanh Pham

发明人： Farhad Moghadam ,  Michael Cox ,  Padmanabhan Krishnaraj ,  Thanh Pham

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507

CPC分类号： C23C16/45542 ,  C23C16/402 ,  C23C16/507

摘要： A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.

摘要翻译： 一种在基板上沉积石英玻璃绝缘膜的方法。 在一个实施方案中，该方法包括将基底暴露于引入到其中设置基底的室中的含硅反应物，使得一层或多层含硅反应物被吸附到基底上; 吹扫或抽空含硅反应物的室; 通过将衬底暴露于由第二反应物形成的氧自由基，同时偏置衬底以促进溅射效应，将含硅反应物转化为石英玻璃绝缘化合物，其中第二反应物中所有原子组分的平均原子质量小于 或等于氧的平均原子质量; 并重复曝光，吹扫/排空和曝光序列多次，直至达到所需的膜厚度。

公开(公告)号：US06541282B1

公开(公告)日：2003-04-01

申请号：US09594187

申请日：2000-06-13

申请人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

发明人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC分类号： H05H102

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O; at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.

摘要翻译： 一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和设备或从约20W至约500W的脉冲RF功率水平。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O的反应制备的; 在约10W至约150W的恒定RF功率水平或在占空比的10％至30％期间从约20W至约250W的脉冲RF功率水平。