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    Method of fabricating semiconductor device by exposing resist mask
    4.
    发明授权
    Method of fabricating semiconductor device by exposing resist mask 失效
    通过曝光抗蚀剂掩模制造半导体器件的方法

    公开(公告)号：US06872658B2

    公开(公告)日：2005-03-29

    申请号：US10302693

    申请日：2002-11-22

    申请人： Etsuko Arakawa ,  Kiyoshi Kato ,  Yoshiyuki Kurokawa

    发明人： Etsuko Arakawa ,  Kiyoshi Kato ,  Yoshiyuki Kurokawa

    IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L21/44

    CPC分类号： H01L29/78621 ,  H01L27/124 ,  H01L29/42384 ,  H01L2029/7863

    摘要： A gate metal is formed in a film, the foregoing gate metal is partially etched per each TFT having a different property, and a gate electrode is fabricated. Specifically, a resist mask is fabricated by exposing a resist to light per each TFT having a different property which is required. A gate metal is etched per each TFT having a different property which is required using the foregoing resist mask. At this time, a gate metal covering a semiconductor active layer of a TFT except for the TFT during the time when the patterning of a gate electrode is performed is left as it is covered. The step of fabricating a gate electrode of each TFT may be performed under the conditions optimized in conformity with the required property.

    摘要翻译： 在薄膜中形成栅极金属，每个具有不同性质的TFT部分地蚀刻上述栅极金属，并且制造栅电极。 具体地，通过使每个TFT具有不同性质的抗蚀剂曝光光来制造抗蚀剂掩模。 每个TFT蚀刻栅极金属，其具有使用上述抗蚀剂掩模所需的不同性质。 此时，在覆盖栅电极的图案形成时的TFT以外的覆盖TFT的半导体有源层的栅极金属被覆盖。 可以在根据所需性能优化的条件下进行制造每个TFT的栅电极的步骤。

    Method of fabricating semiconductor device
    5.
    发明授权
    Method of fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07335593B2

    公开(公告)日：2008-02-26

    申请号：US11088644

    申请日：2005-03-24

    申请人： Etsuko Arakawa ,  Kiyoshi Kato ,  Yoshiyuki Kurokawa

    发明人： Etsuko Arakawa ,  Kiyoshi Kato ,  Yoshiyuki Kurokawa

    IPC分类号： H01L21/44

    CPC分类号： H01L29/78621 ,  H01L27/124 ,  H01L29/42384 ,  H01L2029/7863

    摘要： A gate metal is formed in a film, the foregoing gate metal is partially etched per each TFT having a different property, and a gate electrode is fabricated. Specifically, a resist mask is fabricated by exposing a resist to light per each TFT having a different property which is required. A gate metal is etched per each TFT having a different property which is required using the foregoing resist mask. At this time, a gate metal covering a semiconductor active layer of a TFT except for the TFT during the time when the patterning of a gate electrode is performed is left as it is covered. The step of fabricating a gate electrode of each TFT may be performed under the conditions optimized in conformity with the required property.

    摘要翻译： 在薄膜中形成栅极金属，每个具有不同性质的TFT部分地蚀刻上述栅极金属，并且制造栅电极。 具体地，通过使每个TFT具有不同性质的抗蚀剂曝光光来制造抗蚀剂掩模。 每个TFT蚀刻栅极金属，其具有使用上述抗蚀剂掩模所需的不同性质。 此时，在覆盖栅电极的图案形成时的TFT以外的覆盖TFT的半导体有源层的栅极金属被覆盖。 可以在根据所需性能优化的条件下进行制造每个TFT的栅电极的步骤。

    Method of fabricating semiconductor device
    6.
    发明申请
    Method of fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US20050164434A1

    公开(公告)日：2005-07-28

    申请号：US11088644

    申请日：2005-03-24

    申请人： Etsuko Arakawa ,  Kiyoshi Kato ,  Yoshiyuki Kurokawa

    发明人： Etsuko Arakawa ,  Kiyoshi Kato ,  Yoshiyuki Kurokawa

    IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L21/00 ,  H01L31/036

    CPC分类号： H01L29/78621 ,  H01L27/124 ,  H01L29/42384 ,  H01L2029/7863

    摘要： A gate metal is formed in a film, the foregoing gate metal is partially etched per each TFT having a different property, and a gate electrode is fabricated. Specifically, a resist mask is fabricated by exposing a resist to light per each TFT having a different property which is required. A gate metal is etched per each TFT having a different property which is required using the foregoing resist mask. At this time, a gate metal covering a semiconductor active layer of a TFT except for the TFT during the time when the patterning of a gate electrode is performed is left as it is covered. The step of fabricating a gate electrode of each TFT may be performed under the conditions optimized in conformity with the required property.

    摘要翻译： 在薄膜中形成栅极金属，每个具有不同性质的TFT部分地蚀刻上述栅极金属，并且制造栅电极。 具体地，通过使每个TFT具有不同性质的抗蚀剂曝光光来制造抗蚀剂掩模。 每个TFT蚀刻栅极金属，其具有使用上述抗蚀剂掩模所需的不同性质。 此时，在覆盖栅电极的图案形成时的TFT以外的覆盖TFT的半导体有源层的栅极金属被覆盖。 可以在根据所需性能优化的条件下进行制造每个TFT的栅电极的步骤。