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公开(公告)号：US08836034B2
公开(公告)日：2014-09-16
申请号：US12817481
申请日：2010-06-17
申请人： Atsushi Hirose , Hideaki Shishido
发明人： Atsushi Hirose , Hideaki Shishido
IPC分类号： H01L23/62
CPC分类号： H01L27/0255 , H01L23/60 , H01L23/62 , H01L27/14609 , H01L27/14616 , H01L27/14692 , H01L2924/0002 , H01L2924/00
摘要： A protection circuit used for a semiconductor device is made to effectively function and the semiconductor device is prevented from being damaged by a surge. A semiconductor device includes a terminal electrode, a protection circuit, an integrated circuit, and a wiring electrically connecting the terminal electrode, the protection circuit, and the integrated circuit. The protection circuit is provided between the terminal electrode and the integrated circuit. The terminal electrode, the protection circuit, and the integrated circuit are connected to one another without causing the wiring to branch. It is possible to reduce the damage to the semiconductor device caused by electrostatic discharge. It is also possible to reduce faults in the semiconductor device.
摘要翻译： 用于半导体器件的保护电路被有效地起作用，并且防止半导体器件被浪涌损坏。 半导体器件包括端子电极，保护电路，集成电路以及电连接端子电极，保护电路和集成电路的布线。 保护电路设置在端子电极和集成电路之间。 端子电极，保护电路和集成电路彼此连接，而不会使布线分支。 可以减少由静电放电引起的对半导体器件的损坏。 也可以减少半导体器件中的故障。
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公开(公告)号：US20120132965A1
公开(公告)日：2012-05-31
申请号：US13365305
申请日：2012-02-03
申请人： Hideaki Shishido , Atsushi Hirose
发明人： Hideaki Shishido , Atsushi Hirose
IPC分类号： H01L27/148
CPC分类号： H01L27/1214 , G01J1/02 , G01J1/0209 , G01J1/42 , G01J1/44 , G05F3/262 , G09G3/3241 , H01L27/1266 , H01L27/14609 , H01L27/14687 , H04N5/2351
摘要： A plurality of transistors in which ratios of a channel length L to a channel width W, α=W/L, are different from each other is provided in parallel as output side transistors 105a to 105c in a current mirror circuit 101 which amplifies a photocurrent of a photoelectric conversion device and an internal resistor is connected to each of the output side transistors 105a to 105c in series. The sum of currents which flow through the plurality of transistors and the internal resistor is output, whereby a transistor with large amount of α can be driven in a linear range with low illuminance, and a transistor with small amount of α can be driven in a linear range with high illuminance, so that applicable illuminance range of the photoelectric conversion device can be widened.
摘要翻译： 在通过放大光电流的电流镜电路101中，作为输出侧晶体管105a〜105c并联设置多个晶体管，其中沟道长度L与沟道宽度W，α= W / L的比例彼此不同 的一个光电转换装置和一个内部电阻器串联连接到每个输出侧晶体管105a至105c。 输出流过多个晶体管的电流和内部电阻器的总和，由此可以以低照度在线性范围内驱动具有大量α的晶体管，并且可以在a中驱动具有少量α的晶体管 具有高照度的线性范围，可以扩大光电转换装置的适用照度范围。
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3.发明授权公开(公告)号：US08913050B2
公开(公告)日：2014-12-16
申请号：US13365305
申请日：2012-02-03
申请人： Hideaki Shishido , Atsushi Hirose
发明人： Hideaki Shishido , Atsushi Hirose
IPC分类号： G09G3/22 , H04N5/335 , H01L27/32 , G01J1/42 , G09G3/32 , G05F3/26 , G01J1/02 , G01J1/44 , H01L27/146 , H04N5/235 , H01L27/12
CPC分类号： H01L27/1214 , G01J1/02 , G01J1/0209 , G01J1/42 , G01J1/44 , G05F3/262 , G09G3/3241 , H01L27/1266 , H01L27/14609 , H01L27/14687 , H04N5/2351
摘要： A plurality of transistors in which ratios of a channel length L to a channel width W, α=W/L, are different from each other is provided in parallel as output side transistors 105a to 105c in a current mirror circuit 101 which amplifies a photocurrent of a photoelectric conversion device and an internal resistor is connected to each of the output side transistors 105a to 105c in series. The sum of currents which flow through the plurality of transistors and the internal resistor is output, whereby a transistor with large amount of α can be driven in a linear range with low illuminance, and a transistor with small amount of α can be driven in a linear range with high illuminance, so that applicable illuminance range of the photoelectric conversion device can be widened.
摘要翻译： 在通过放大光电流的电流镜电路101中，作为输出侧晶体管105a〜105c并联设置多个晶体管，其中沟道长度L与沟道宽度W，α= W / L的比例彼此不同 的一个光电转换装置和一个内部电阻器串联连接到每个输出侧晶体管105a至105c。 输出流过多个晶体管的电流和内部电阻器的总和，由此可以以低照度在线性范围内驱动具有大量α的晶体管，并且可以在a中驱动具有少量α的晶体管 具有高照度的线性范围，可以扩大光电转换装置的适用照度范围。
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4.发明授权公开(公告)号：US08154480B2
公开(公告)日：2012-04-10
申请号：US12176732
申请日：2008-07-21
申请人： Hideaki Shishido , Atsushi Hirose
发明人： Hideaki Shishido , Atsushi Hirose
CPC分类号： H01L27/1214 , G01J1/02 , G01J1/0209 , G01J1/42 , G01J1/44 , G05F3/262 , G09G3/3241 , H01L27/1266 , H01L27/14609 , H01L27/14687 , H04N5/2351
摘要： A plurality of transistors in which ratios of a channel length L to a channel width W, α=W/L, are different from each other is provided in parallel as output side transistors 105a to 105c in a current mirror circuit 101 which amplifies a photocurrent of a photoelectric conversion device and an internal resistor is connected to each of the output side transistors 105a to 105c in series. The sum of currents which flow through the plurality of transistors and the internal resistor is output, whereby a transistor with large amount of α can be driven in a linear range with low illuminance, and a transistor with small amount of α can be driven in a linear range with high illuminance, so that applicable illuminance range of the photoelectric conversion device can be widened.
摘要翻译： 在通过放大光电流的电流镜电路101中，作为输出侧晶体管105a〜105c并联设置多个晶体管，其中沟道长度L与沟道宽度W，α= W / L的比例彼此不同 的一个光电转换装置和一个内部电阻器串联连接到每个输出侧晶体管105a至105c。 输出流过多个晶体管的电流和内部电阻器的总和，由此可以以低照度在线性范围内驱动具有大量α的晶体管，并且可以在a中驱动具有少量α的晶体管 具有高照度的线性范围，可以扩大光电转换装置的适用照度范围。
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公开(公告)号：US07923800B2
公开(公告)日：2011-04-12
申请号：US12000824
申请日：2007-12-18
申请人： Atsushi Hirose , Hideaki Shishido
发明人： Atsushi Hirose , Hideaki Shishido
IPC分类号： H01L31/0232
CPC分类号： H01L23/60 , H01L27/0248 , H01L27/14609 , H01L27/14643 , H01L31/02019 , H01L2924/0002 , H01L2924/00
摘要： The present invention has a photodiode and a circuit used to amplify the output of the photodiode. Two terminals are formed over the photodiode and circuit with an insulating layer interposed therebetween, and a dummy electrode with a larger area than that of either of the two terminals is formed thereover, adjacent to the two terminals. The dummy electrode is not connected to the photodiode or to the circuit of the semiconductor device. Because the dummy electrode has a wide area, damage due to electrostatic discharge occurs in the dummy electrode more easily than in the two terminals; thus, damage due to electrostatic discharge can be prevented from occurring in the semiconductor device.
摘要翻译： 本发明具有用于放大光电二极管的输出的光电二极管和电路。 两个端子形成在光电二极管和电路之间，绝缘层位于其间，并且与两个端子相邻地形成有比两个端子中的任一个更大的面积的虚拟电极。 虚拟电极不连接到光电二极管或半导体器件的电路。 由于虚拟电极的面积较大，所以在虚拟电极中比两端子容易发生静电放电造成的损伤; 因此，可以防止在半导体器件中发生由于静电放电引起的损坏。
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公开(公告)号：US20100328916A1
公开(公告)日：2010-12-30
申请号：US12817481
申请日：2010-06-17
申请人： Atsushi Hirose , Hideaki Shishido
发明人： Atsushi Hirose , Hideaki Shishido
IPC分类号： H05K7/00
CPC分类号： H01L27/0255 , H01L23/60 , H01L23/62 , H01L27/14609 , H01L27/14616 , H01L27/14692 , H01L2924/0002 , H01L2924/00
摘要： A protection circuit used for a semiconductor device is made to effectively function and the semiconductor device is prevented from being damaged by a surge. A semiconductor device includes a terminal electrode, a protection circuit, an integrated circuit, and a wiring electrically connecting the terminal electrode, the protection circuit, and the integrated circuit. The protection circuit is provided between the terminal electrode and the integrated circuit. The terminal electrode, the protection circuit, and the integrated circuit are connected to one another without causing the wiring to branch. It is possible to reduce the damage to the semiconductor device caused by electrostatic discharge. It is also possible to reduce faults in the semiconductor device.
摘要翻译： 用于半导体器件的保护电路被有效地起作用，并且防止半导体器件被浪涌损坏。 半导体器件包括端子电极，保护电路，集成电路以及电连接端子电极，保护电路和集成电路的布线。 保护电路设置在端子电极和集成电路之间。 端子电极，保护电路和集成电路彼此连接，而不会使布线分支。 可以减少由静电放电引起的对半导体器件的损坏。 也可以减少半导体器件中的故障。
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公开(公告)号：US20080156368A1
公开(公告)日：2008-07-03
申请号：US12000824
申请日：2007-12-18
申请人： Atsushi Hirose , Hideaki Shishido
发明人： Atsushi Hirose , Hideaki Shishido
IPC分类号： H01L31/04
CPC分类号： H01L23/60 , H01L27/0248 , H01L27/14609 , H01L27/14643 , H01L31/02019 , H01L2924/0002 , H01L2924/00
摘要： The present invention has a photodiode and a circuit used to amplify the output of the photodiode. Two terminals are formed over the photodiode and circuit with an insulating layer interposed therebetween, and a dummy electrode with a larger area than that of either of the two terminals is formed thereover, adjacent to the two terminals. The dummy electrode is not connected to the photodiode or to the circuit of the semiconductor device. Because the dummy electrode has a wide area, damage due to electrostatic discharge occurs in the dummy electrode more easily than in the two terminals; thus, damage due to electrostatic discharge can be prevented from occurring in the semiconductor device.
摘要翻译： 本发明具有用于放大光电二极管输出的光电二极管和电路。 两个端子形成在光电二极管和电路之间，绝缘层位于其间，并且与两个端子相邻地形成有比两个端子中的任一个更大的面积的虚拟电极。 虚拟电极不连接到光电二极管或半导体器件的电路。 由于虚拟电极的面积较大，所以在虚拟电极中比两端子容易发生静电放电造成的损伤; 因此，可以防止在半导体器件中发生由于静电放电引起的损坏。
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公开(公告)号：US09451246B2
公开(公告)日：2016-09-20
申请号：US13545768
申请日：2012-07-10
申请人： Jun Koyama , Hiroyuki Miyake , Hideaki Shishido , Seiko Inoue , Kouhei Toyotaka , Koji Kusunoki , Hikaru Harada , Makoto Kaneyasu
发明人： Jun Koyama , Hiroyuki Miyake , Hideaki Shishido , Seiko Inoue , Kouhei Toyotaka , Koji Kusunoki , Hikaru Harada , Makoto Kaneyasu
CPC分类号： H04N13/376 , H04N13/315 , H04N13/324 , H04N13/356 , H04N13/373
摘要： A display device includes a display panel including a plurality of pixels, a shutter panel including a driver circuit, a liquid crystal, and light-transmitting electrodes provided in a striped manner, and a positional data detector configured to detect a positional data of a viewer. The shutter panel is provided over a display surface side of the display panel, a width of one of the light-transmitting electrodes in the shutter panel is smaller than that of one of the plurality of pixels, and the driver circuit in the shutter panel is configured to selectively output signals for forming a parallax barrier to the light-transmitting electrodes. The parallax barrier is capable of changing its shape in accordance with the detected positional data.
摘要翻译： 一种显示装置，包括：包括多个像素的显示面板;包括驱动电路的快门面板;液晶;以条纹方式设置的透光电极;以及位置数据检测器，被配置为检测观察者的位置数据 。 快门面板设置在显示面板的显示面侧，快门面板中的一个透光电极的宽度小于多个像素中的一个透光电极的宽度，而快门面板中的驱动电路为 被配置为选择性地输出用于形成对透光电极的视差屏障的信号。 视差屏障能够根据检测到的位置数据改变其形状。
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9.发明授权Display device and driving method and electronic apparatus of the display device 有权显示装置和显示装置的驱动方法和电子装置公开(公告)号：US09047809B2
公开(公告)日：2015-06-02
申请号：US12781280
申请日：2010-05-17
申请人： Hajime Kimura , Hideaki Shishido
发明人： Hajime Kimura , Hideaki Shishido
CPC分类号： G09G3/32 , G09G3/2033 , G09G3/204 , G09G2300/08 , G09G2300/0809 , G09G2320/0266
摘要： To reduce a pseudo contour which occurs when displaying by a time gray scale method. When gradation is expressed with an n bit, bits each of which is shown by a binary of the gray scales are divided into three bit groups, and one frame is divided into two subframe groups. Then, a (0
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公开(公告)号：US09012918B2
公开(公告)日：2015-04-21
申请号：US12730288
申请日：2010-03-24
申请人： Shunpei Yamazaki , Takayuki Abe , Hideaki Shishido
发明人： Shunpei Yamazaki , Takayuki Abe , Hideaki Shishido
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/3248 , H01L29/42376 , H01L29/42384 , H01L29/78606 , H01L29/78645 , H01L29/78648
摘要： The threshold voltage is shifted in a negative or positive direction in some cases by an unspecified factor in a manufacturing process of the thin film transistor. If the amount of shift from 0 V is large, driving voltage is increased, which results in an increase in power consumption of a semiconductor device. Thus, a resin layer having good flatness is formed as a first protective insulating film covering the oxide semiconductor layer, and then a second protective insulating film is formed by a sputtering method or a plasma CVD method under a low power condition over the resin layer. Further, in order to adjust the threshold voltage to a desired value, gate electrodes are provided over and below an oxide semiconductor layer.
摘要翻译： 在薄膜晶体管的制造过程中，阈值电压在负方向或正方向上偏移一些未指定因子。 如果从0V的偏移量大，则驱动电压增加，这导致半导体器件的功耗的增加。 因此，形成具有良好平坦度的树脂层作为覆盖氧化物半导体层的第一保护绝缘膜，然后通过溅射法或等离子体CVD法在低功率条件下在树脂层上形成第二保护绝缘膜。 此外，为了将阈值电压调整为期望值，在氧化物半导体层的上方和下方设置栅电极。
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