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    Positive resist composition and pattern forming method
    8.
    发明授权
    Positive resist composition and pattern forming method 失效
    正抗蚀剂组成和图案形成方法

    公开(公告)号：US08088550B2

    公开(公告)日：2012-01-03

    申请号：US12181757

    申请日：2008-07-29

    申请人： Shinji Tarutani ,  Hideaki Tsubaki ,  Kenji Wada

    发明人： Shinji Tarutani ,  Hideaki Tsubaki ,  Kenji Wada

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/2022 ,  G03F7/2041 ,  Y10S430/111

    摘要： A positive resist composition, includes: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin of which solubility in an alkali developer increases under an action of an acid; (C) a compound capable of decomposing under an action of an acid to generate an acid; and (D) a compound which itself acts as a base for the acids generated from the component (A) and the component (C) but decomposes upon irradiation with actinic rays or radiation to lose a basicity for the acids generated from the component (A) and the component (C).

    摘要翻译： 正型抗蚀剂组合物包括：（A）在用光化射线或辐射照射时能够产生酸的化合物; （B）在碱性显影剂中的溶解度在酸的作用下增加的树脂; （C）能够在酸的作用下分解以产生酸的化合物; 和（D）本身作为由组分（A）和组分（C）产生的酸的碱的化合物，但是在用光化射线或辐射照射时分解，以失去由组分（A）产生的酸的碱度 ）和组分（C）。

    Positive resist composition and pattern forming method using the same
    9.
    发明申请
    Positive resist composition and pattern forming method using the same 失效
    正型抗蚀剂组合物和使用其的图案形成方法

    公开(公告)号：US20060194148A1

    公开(公告)日：2006-08-31

    申请号：US11356051

    申请日：2006-02-17

    申请人： Hideaki Tsubaki ,  Shinji Tarutani

    发明人： Hideaki Tsubaki ,  Shinji Tarutani

    IPC分类号： G03C1/76

    CPC分类号： G03F7/0046 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0395 ,  G03F7/0397

    摘要： The invention provides a positive resist composition suitably usable at the time of using an ArF excimer laser light as the exposure light, source, assured of excellent performance in view of resist profile, sensitivity, resolution and line edge roughness, and free from occurrence of pattern falling and development defect, and a pattern forming method using the composition, which are a positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (B) a resin having an alicyclic hydrocarbon structure, which decomposes under the action of an acid to increase the solubility in an alkali, and (C) a chain compound having one or two group(s) selected from a hydroxyl group and a group where the hydrogen atom of a hydroxyl group is substituted with an organic group, in which the chain compound is a solid at ordinary temperature under atmospheric pressure, and a pattern forming method using the composition.

    摘要翻译： 本发明提供了在使用ArF准分子激光作为曝光光源时适当使用的正性抗蚀剂组合物，鉴于抗蚀剂轮廓，灵敏度，分辨率和线边缘粗糙度，并且不发生图案，确保了优异的性能 以及使用该组合物的图案形成方法，其为正型抗蚀剂组合物，其包含（A）在通过光化射线或辐射照射时能够产生酸的化合物，（B）具有脂环族烃结构的树脂， 其在酸的作用下分解以增加在碱中的溶解度，和（C）具有一个或两个选自羟基和羟基的氢原子被取代基的基团的链化合物 链状化合物在常压下为固体的有机基团和使用该组合物的图案形成方法。