Positive-working naphthoquinone diazide photoresist composition with two
cresol novolac resins
    3.
    发明授权
    Positive-working naphthoquinone diazide photoresist composition with two cresol novolac resins 失效
    具有两种甲酚酚醛清漆树脂的正性萘醌二叠氮化合物光致抗蚀剂组合物

    公开(公告)号:US4731319A

    公开(公告)日:1988-03-15

    申请号:US886839

    申请日:1986-07-18

    CPC分类号: G03F7/0236

    摘要: A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g. VLSIs, with high fidelity is proposed. The composition comprises a cresol novolac resin and a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is characteristically a combination of two different cresol novolac resins differentiated in respects of the weight-average molecular weight, one large and the other small, and the weight proportion of the m- and p-isomers of cresol, one rich in the m-isomer and the other rich in the p-isomer, used in the preparation of the novolac and the overall weight ratio of the m-cresol and p-cresol moieties in the thus combined cresol novolac resins also should be in a specified range.

    摘要翻译: 适用于制造半导体器件的精细图案化的正性光致抗蚀剂组合物,例如, 提出了高保真的VLSI。 该组合物包含甲酚酚醛清漆树脂和萘醌二叠氮化物磺酸酯作为感光组分,而甲酚酚醛清漆树脂组分特征是两种不同甲酚酚醛清漆树脂的组合,其重均分子量分别为大,一 小的,并且用于制备酚醛清漆的甲酚和m-异构体的m-和p-异构体的重量比例,其中一个富含m-异构体和另一个富含p-异构体的重量比例, 这样组合的甲酚酚醛清漆树脂中的甲酚和对甲酚部分也应在特定的范围内。

    Highly heat-resistant positive-working o-quinone diazide containing
photoresist composition with novolac resin made from phenol with
ethylenic unsaturation
    7.
    发明授权
    Highly heat-resistant positive-working o-quinone diazide containing photoresist composition with novolac resin made from phenol with ethylenic unsaturation 失效
    含酚酚醛树脂制成的具有烯键式不饱和度的高耐热正性邻醌醌二叠氮化物

    公开(公告)号:US4804612A

    公开(公告)日:1989-02-14

    申请号:US62954

    申请日:1987-06-16

    CPC分类号: C08G8/08 G03F7/0236

    摘要: Although the positive-working photoresist composition comprises a phenolic novolac resin as the film-forming component and a known photosensitizing compound as in conventional compositions, the novolac resin is prepared from a specific mixture of two classes of phenolic compounds including, one, phenol, cresols and/or resorcinol and, the other, one or more of the phenolic compounds having a nucleus-substituting group selected from allyloxy, allyloxymethyl, allyl dimethyl silyl, 2-(allyl dimethyl silyl) ethoxy, cinnamoyl, acryloyl and methacryloyl groups. By virtue of this unique combination to give the phenolic moiety in the novolac resin, the photoresist composition has markedly improved heat resistance as well as stability against plasma in dry etching so that the composition can give a patterned photoresist layer with extreme fineness having high fidelity to the mask pattern.

    摘要翻译: 尽管正性光致抗蚀剂组合物包含作为成膜组分的酚醛酚醛树脂和常规组合物中已知的光敏化合物,但酚醛清漆树脂由两类酚类化合物的特定混合物制备,包括一种酚类,甲酚 和/或间苯二酚,另一种,一种或多种具有选自烯丙氧基,烯丙氧基甲基,烯丙基二甲基甲硅烷基,2-(烯丙基二甲基甲硅烷基)乙氧基,肉桂酰基,丙烯酰基和甲基丙烯酰基的取代基的酚类化合物。 由于这种独特的组合使得酚醛部分在酚醛清漆树脂中,光致抗蚀剂组合物在干蚀刻中具有显着改善的耐热性以及抗等离子体的稳定性,使得组合物可以给出具有高保真度的极细度的图案化光致抗蚀剂层 掩模图案。

    Method for forming a resist pattern on a substrate surface and a
scum-remover therefor
    8.
    发明授权
    Method for forming a resist pattern on a substrate surface and a scum-remover therefor 失效
    在基板表面上形成抗蚀剂图案的方法和用于其的浮渣除去器

    公开(公告)号:US4873177A

    公开(公告)日:1989-10-10

    申请号:US229762

    申请日:1988-08-05

    IPC分类号: G03F7/32

    CPC分类号: G03F7/322

    摘要: The pattern-wise photoresist layer formed on the surface of a substrate according to the inventive method is imparted with a greatly improved resolving power as a result of complete removal of the scum residua left after the development treatment. Namely, the positive-working photoresist layer formed on the substrate surface is exposed pattern-wise to actinic rays, developed with a developer solution which is typically a 2-7% aqueous solution of a quaternary ammonium hydroxide and then rinsed with a scum-remover solution which is a mixture of 100 parts of a 0.1-1.5% aqueous solution of a quaternary ammonium hydroxide and 1-30 parts of a water-miscible organic solvent and capable of dissolving away the scum residua in the pattern-wise photoresist layer without affecting the quality of the photoresist pattern reproduction.

    摘要翻译: 根据本发明方法形成在基材表面上的图案光致抗蚀剂层由于在显影处理后完全除去剩余的浮渣残留物而赋予极大改进的分辨能力。 也就是说,形成在基板表面上的正性光致抗蚀剂层以图案方式暴露于光化学射线,用显影剂溶液显影,显影剂溶液通常为2-7%氢氧化季铵水溶液,然后用浮渣除去剂 溶液,其为100份0.1-1.5%的季铵氢氧化物水溶液和1-30份水混溶性有机溶剂的混合物,并且能够将浮渣残留物溶解在图案化光致抗蚀剂层中而不影响 光刻胶图案再现的质量。

    Positive-working photoresist composition containing quinone diazide
compound, novolak resin and alkyl pyruvate solvent
    9.
    发明授权
    Positive-working photoresist composition containing quinone diazide compound, novolak resin and alkyl pyruvate solvent 失效
    含有醌二叠氮化合物,酚醛清漆树脂和丙酮酸烷基酯溶剂的正性光致抗蚀剂组合物

    公开(公告)号:US5100758A

    公开(公告)日:1992-03-31

    申请号:US623014

    申请日:1990-12-06

    CPC分类号: G03F7/0048

    摘要: A proposal is made for the use of an alkyl pyruvate or a solvent mixture mainly composed thereof as a solvent in a positive-working photoresist composition comprising an alkali-soluble novolac resin as the film-forming ingredient and a quinone diazide group-containing compound as the photosensitive ingredient. By virtue of the use of the unique solvent, the photoresist composition is advantageous in the outstandingly high stability with little moisture absorption from ambience not to cause precipitation of solid matters in addition to the quite satisfactory properties in other respects as a photoresist composition.

    摘要翻译: 提出在主要由它们构成的作为溶剂的烷基丙酮酸盐或其溶剂混合物中使用含有碱溶性酚醛清漆树脂作为成膜成分的正性光致抗蚀剂组合物和含醌二叠氮基化合物作为 感光成分。 由于使用独特的溶剂,光致抗蚀剂组合物除了在其它方面作为光致抗蚀剂组合物的相当令人满意的性能外,还具有突出的高稳定性,而且从环境几乎没有吸湿性而不会引起固体物质沉淀。

    Electron beam-curable resist composition and method for fine patterning
using the same
    10.
    发明授权
    Electron beam-curable resist composition and method for fine patterning using the same 失效
    电子束固化型抗蚀剂组合物及使用其的精细图案化方法

    公开(公告)号:US5180653A

    公开(公告)日:1993-01-19

    申请号:US693664

    申请日:1991-04-30

    IPC分类号: C08K5/3492 C08L61/06

    摘要: An electron beam-curable resist composition suitable for fine patterning works in the manufacturing process of semiconductor devices is proposed which is outstandingly stable in storage and capable of being developed using an aqueous alkaline developer solution without scums and giving a patterned resist layer with high contrast and orthogonal cross sectional profile of a line pattern. The composition comprises (A) a triazine compound, such as 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, (B) a cresol novolac resin, of which at least 30% by weight of the phenolic moiety is derived from m-cresol, and (C) an alkoxymethylated melamine resin in specified proportions of (B):(C) and (A):[(B)+(C)]. The sensitivity of the resist composition is greatly enhanced by a heat treatment of the resist layer at 90.degree.-140.degree. C. after patternwise irradiation with electron beams.

    摘要翻译: 提出了一种适用于半导体器件制造工艺中精细图案化的电子束固化型抗蚀剂组合物,其在储存中非常稳定,并且能够使用不含浮渣的碱性显影剂水溶液显影,并提供具有高对比度的图案化抗蚀剂层, 线图案的正交横截面轮廓。 组合物包含(A)三嗪化合物,例如2-(4-甲氧基苯基)-4,6-双(三氯甲基)-1,3,5-三嗪,(B)甲酚酚醛清漆树脂,其中至少30 酚类部分的重量百分比来自间甲酚,(C)(B):( C)和(A):[(B)+(C)]的规定比例的烷氧基甲基化三聚氰胺树脂。 通过在用电子束图案照射之后,在90℃-140℃下对抗蚀剂层进行热处理,抗蚀剂组合物的灵敏度大大提高。