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    Method for Manufacturing Semiconductor Device
    1.
    发明申请
    Method for Manufacturing Semiconductor Device 有权
    半导体器件制造方法

    公开(公告)号：US20080070393A1

    公开(公告)日：2008-03-20

    申请号：US11839349

    申请日：2007-08-15

    申请人： Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Eiji Higa ,  Shunpei Yamazaki

    发明人： Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Eiji Higa ,  Shunpei Yamazaki

    IPC分类号： H01L21/311 ,  H01L21/3205 ,  H01L21/44

    CPC分类号： H01L27/1288 ,  B23K26/0884 ,  B23K2101/006 ,  G03F1/20 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/66765

    摘要： In a manufacturing process of a semiconductor device, a manufacturing technique for reducing the number of lithography processes that use a photoresist and simplifying the process is provided, which improves throughput. An etching mask for forming a pattern of a layer to be processed such as a conductive layer or a semiconductor layer is manufactured without using a lithography technique that uses a photoresist. The etching mask is formed of a light absorption layer including a material which absorbs a laser beam. The mask is formed by irradiating the light absorption layer with a laser beam through a photomask and utilizing laser ablation by energy of the laser beam absorbed by the light absorption layer.

    摘要翻译： 在半导体器件的制造工艺中，提供了减少使用光致抗蚀剂并简化工艺的光刻工艺的数量的制造技术，这提高了生产率。 在不使用使用光致抗蚀剂的光刻技术的情况下，制造用于形成诸如导电层或半导体层的被处理层的图案的蚀刻掩模。 蚀刻掩模由包括吸收激光束的材料的光吸收层形成。 通过光掩模用激光束照射光吸收层并利用由光吸收层吸收的激光束的能量进行激光烧蚀来形成掩模。

    Method for manufacturing semiconductor device
    2.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07927991B2

    公开(公告)日：2011-04-19

    申请号：US11839349

    申请日：2007-08-15

    申请人： Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Eiji Higa ,  Shunpei Yamazaki

    发明人： Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Eiji Higa ,  Shunpei Yamazaki

    IPC分类号： H01L21/20 ,  H01L21/3205

    CPC分类号： H01L27/1288 ,  B23K26/0884 ,  B23K2101/006 ,  G03F1/20 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/66765

    摘要： In a manufacturing process of a semiconductor device, a manufacturing technique for reducing the number of lithography processes that use a photoresist and simplifying the process is provided, which improves throughput. An etching mask for forming a pattern of a layer to be processed such as a conductive layer or a semiconductor layer is manufactured without using a lithography technique that uses a photoresist. The etching mask is formed of a light absorption layer including a material which absorbs a laser beam. The mask is formed by irradiating the light absorption layer with a laser beam through a photomask and utilizing laser ablation by energy of the laser beam absorbed by the light absorption layer.

    摘要翻译： 在半导体器件的制造工艺中，提供了减少使用光致抗蚀剂并简化工艺的光刻工艺的数量的制造技术，这提高了生产率。 在不使用使用光致抗蚀剂的光刻技术的情况下，制造用于形成诸如导电层或半导体层的被处理层的图案的蚀刻掩模。 蚀刻掩模由包括吸收激光束的材料的光吸收层形成。 通过光掩模用激光束照射光吸收层并利用由光吸收层吸收的激光束的能量进行激光烧蚀来形成掩模。

    Display device
    7.
    发明授权
    Display device 有权
    显示设备

    公开(公告)号：US09048147B2

    公开(公告)日：2015-06-02

    申请号：US13613811

    申请日：2012-09-13

    申请人： Shunpei Yamazaki ,  Takeshi Osada ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

    发明人： Shunpei Yamazaki ,  Takeshi Osada ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

    IPC分类号： G09G3/36 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

    CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/1365 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/04 ,  H01L29/78648 ,  Y10T428/24331

    摘要： A display device of which frame can be narrowed and of which display characteristics are excellent is provided. In a display device including a switch portion or a buffer portion, a logic circuit portion, and a pixel portion, the pixel portion includes a first inverted staggered TFT and a pixel electrode which is connected to a wiring of the first inverted staggered TFT, the switch portion or the buffer portion includes a second inverted staggered TFT in which a first insulating layer, a semiconductor layer, and a second insulating layer are interposed between a first gate electrode and a second gate electrode, the logic circuit portion includes an inverter circuit including a third inverted staggered thin film transistor and a fourth inverted staggered thin film transistor, and the first to the fourth inverted staggered thin film transistors have the same polarity. The inverter circuit may be an EDMOS circuit.

    摘要翻译： 提供了一种可以缩小框架并且显示特性优异的显示装置。 在包括开关部分或缓冲部分，逻辑电路部分和像素部分的显示装置中，像素部分包括连接到第一反交错TFT的布线的第一反交错TFT和像素电极， 开关部分或缓冲部分包括其中第一绝缘层，半导体层和第二绝缘层插入在第一栅电极和第二栅电极之间的第二反交错TFT，所述逻辑电路部分包括逆变器电路，包括 第三反交错薄膜晶体管和第四反交错薄膜晶体管，并且第一至第四反交错薄膜晶体管具有相同的极性。 逆变器电路可以是EDMOS电路。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08558236B2

    公开(公告)日：2013-10-15

    申请号：US13196926

    申请日：2011-08-03

    申请人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

    发明人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

    IPC分类号： H01L29/786

    CPC分类号： H01L27/1288 ,  H01L21/67017 ,  H01L21/67207 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1244 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765 ,  H01L29/78678 ,  H01L29/78687 ,  H01L29/78696

    摘要： An object is to reduce off-current of a thin film transistor. Another object is to improve electric characteristics of a thin film transistor. Further, it is still another object to improve image quality of a display device using the thin film transistor. An aspect of the present invention is a thin film transistor including a semiconductor film formed over a gate electrode and in an inner region of the gate electrode which does not reach an end portion of the gate electrode, with a gate insulating film interposed therebetween, a film covering at least a side surface of the semiconductor film, and a pair of wirings over the film covering the side surface of the semiconductor film; in which an impurity element serving as a donor is added to the semiconductor film.

    摘要翻译： 目的是减少薄膜晶体管的截止电流。 另一个目的是改善薄膜晶体管的电特性。 此外，还有另一个目的是提高使用薄膜晶体管的显示装置的图像质量。 本发明的一个方面是一种薄膜晶体管，它包括半导体膜，该半导体膜形成在栅电极之上，并且在栅电极的内部区域中，其不到达栅电极的端部，栅极绝缘膜介于它们之间， 至少覆盖半导体膜的侧面的膜，以及覆盖半导体膜的侧面的膜上的一对配线; 其中作为供体的杂质元素被添加到半导体膜。

    Thin film transistor
    9.
    发明授权
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US08637866B2

    公开(公告)日：2014-01-28

    申请号：US12490447

    申请日：2009-06-24

    申请人： Toshiyuki Isa ,  Yasuhiro Jinbo ,  Sachiaki Tezuka ,  Koji Dairiki ,  Hidekazu Miyairi ,  Shunpei Yamazaki ,  Takuya Hirohashi

    发明人： Toshiyuki Isa ,  Yasuhiro Jinbo ,  Sachiaki Tezuka ,  Koji Dairiki ,  Hidekazu Miyairi ,  Shunpei Yamazaki ,  Takuya Hirohashi

    IPC分类号： H01L29/72

    CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

    摘要： A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.

    摘要翻译： 至少在源区和漏区侧，薄膜晶体管包括作为缓冲层的半导体层，该半导体层含有氮并且包括在栅极绝缘层和源极和漏极区之间的非晶结构中的晶体区域。 与在沟道形成区域中包含非晶半导体的薄膜晶体管相比，可以提高薄膜晶体管的导通电流。 此外，与在沟道形成区域中包含微晶半导体的薄膜晶体管相比，可以减小薄膜晶体管的截止电流。