公开(公告)号：US20120048180A1

公开(公告)日：2012-03-01

申请号：US13196309

申请日：2011-08-02

申请人： Hideki Ito ,  Toshiro Tsumori ,  Kunihiko Suzuki

发明人： Hideki Ito ,  Toshiro Tsumori ,  Kunihiko Suzuki

IPC分类号： C30B25/10 ,  C23C16/46

CPC分类号： C23C16/325 ,  C23C16/455 ,  C23C16/45519 ,  C23C16/45557 ,  C23C16/458 ,  C23C16/46 ,  C30B25/10

摘要： It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters.

摘要翻译： 本发明的目的是提供一种能够延长在外延生长技术中在高温条件下使用的加热器的寿命的成膜装置和成膜方法。 惰性气体排出部分将惰性气体供入包含加热器的空间中，然后气体在成膜期间通过气体排出部分排出，而不影响半导体基板。 因此，可以防止反应气体进入含有高温加热器的空间。 这使得可以防止反应气体中所含的氢气与构成加热器的SiC反应。 因此，可以防止由于SiC的分解而使用作为加热器的基材的碳然后与氢气反应。 这使得可以延长加热器的寿命。

公开(公告)号：US20120031330A1

公开(公告)日：2012-02-09

申请号：US13187904

申请日：2011-07-21

申请人： Toshiro TSUMORI ,  Shinichi Mitani ,  Kunihiko Suzuki

发明人： Toshiro TSUMORI ,  Shinichi Mitani ,  Kunihiko Suzuki

IPC分类号： C30B25/16 ,  C30B25/12

CPC分类号： C30B25/12 ,  C23C14/021 ,  C23C16/0227 ,  C23C16/22 ,  C23C16/32 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/46 ,  C30B29/36 ,  C30B33/12

摘要： According to this embodiment, a semiconductor substrate manufacturing apparatus for epitaxial growth in which gases are supplied to a wafer placed on a susceptor and in which a heater is provided on the back surface of the susceptor. As a result of this epitaxial growth, SiC film is deposited onto the susceptor in the film-forming chamber. The susceptor is then moved into a separate chamber and the SiC film deposited on the susceptor during the epitaxial process is removed. After removal of SiC film, regeneration of the SiC film of the susceptor occurs. This semiconductor substrate manufacturing apparatus makes it possible to remove film deposited on a susceptor during epitaxial growth that would otherwise limit manufacturing yield.

摘要翻译： 根据本实施方式，将用于外延生长的半导体衬底制造装置供给到放置在基座上的晶片，并且在基座的背面设置有加热器。 作为这种外延生长的结果，SiC膜沉积在成膜室中的基座上。 然后将基座移动到单独的室中，并且在外延过程中沉积在基座上的SiC膜被去除。 在去除SiC膜之后，发生感受器的SiC膜的再生。 该半导体衬底制造装置使得可以在外延生长期间去除沉积在基座上的膜，否则会限制制造成品率。

公开(公告)号：US20110265710A1

公开(公告)日：2011-11-03

申请号：US13096349

申请日：2011-04-28

申请人： Kunihiko Suzuki ,  Shinichi Mitani ,  Toshiro Tsumori

发明人： Kunihiko Suzuki ,  Shinichi Mitani ,  Toshiro Tsumori

IPC分类号： C30B23/06

CPC分类号： C30B29/36 ,  C23C16/45519 ,  C23C16/46 ,  C23C16/52 ,  C30B25/16

摘要： A film-forming apparatus includes a chamber in which a substrate is to be placed, a reaction gas supply portion that supplies a reaction gas into the chamber, a heater that heats the substrate, a radiation thermometer that is provided outside the chamber to measure the temperature of the substrate by receiving radiant light from the substrate, and a tubular member that protects an optical path of radiant light between the substrate and the radiation thermometer. An inert gas is supplied from an inert gas supply portion to the tubular member. The tubular member preferably has an inner peripheral surface and an outer peripheral surface made of a material having a lower emissivity than the inner peripheral surface.

摘要翻译： 一种成膜设备包括：一个其中放置一个基底的腔室;一个反应气体供应部分，其将反应气体提供到该腔室;一个加热器，加热该基底;一个放射温度计， 通过从衬底接收辐射光，衬底的温度以及保护衬底和辐射温度计之间的辐射光的光路的管状构件。 从惰性气体供给部向管状部件供给惰性气体。 管状构件优选具有由比内周面更低的发射率的材料制成的内周面和外周面。

公开(公告)号：US09139933B2

公开(公告)日：2015-09-22

申请号：US13187904

申请日：2011-07-21

申请人： Toshiro Tsumori ,  Shinichi Mitani ,  Kunihiko Suzuki

发明人： Toshiro Tsumori ,  Shinichi Mitani ,  Kunihiko Suzuki

IPC分类号： C23C16/22 ,  C23C16/32 ,  C23C16/46 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C30B25/12 ,  C23C14/02 ,  C23C16/02 ,  C23C16/44 ,  C30B29/36 ,  C30B33/12

CPC分类号： C30B25/12 ,  C23C14/021 ,  C23C16/0227 ,  C23C16/22 ,  C23C16/32 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/46 ,  C30B29/36 ,  C30B33/12

摘要： According to this embodiment, a semiconductor substrate manufacturing apparatus for epitaxial growth in which gases are supplied to a wafer placed on a susceptor and in which a heater is provided on the back surface of the susceptor. As a result of this epitaxial growth, SiC film is deposited onto the susceptor in the film-forming chamber. The susceptor is then moved into a separate chamber and the SiC film deposited on the susceptor during the epitaxial process is removed. After removal of SiC film, regeneration of the SiC film of the susceptor occurs. This semiconductor substrate manufacturing apparatus makes it possible to remove film deposited on a susceptor during epitaxial growth that would otherwise limit manufacturing yield.

摘要翻译： 根据本实施方式，将用于外延生长的半导体衬底制造装置供给到放置在基座上的晶片，并且在基座的背面设置有加热器。 作为这种外延生长的结果，SiC膜沉积在成膜室中的基座上。 然后将基座移动到单独的室中，并且在外延过程中沉积在基座上的SiC膜被去除。 在去除SiC膜之后，发生感受器的SiC膜的再生。 该半导体衬底制造装置使得可以在外延生长期间去除沉积在基座上的膜，否则会限制制造成品率。

公开(公告)号：US08815711B2

公开(公告)日：2014-08-26

申请号：US13160209

申请日：2011-06-14

申请人： Kunihiko Suzuki ,  Hideki Ito ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Masahiko Ito

发明人： Kunihiko Suzuki ,  Hideki Ito ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Masahiko Ito

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/31 ,  H01L21/469 ,  B08B17/02 ,  H01L21/67 ,  C23C16/44 ,  H01L21/205

CPC分类号： B08B17/02 ,  C23C16/4405 ,  C23C16/4412 ,  H01L21/67109

摘要： A manufacturing apparatus for a semiconductor device, including: a reaction chamber configured to perform film formation on a wafer; a process gas supplying mechanism provided in an upper part of the reaction chamber and configured to introduce process gas to an interior of the reaction chamber; a gas discharging mechanism provided in a lower part of the reaction chamber and configured to discharge gas from the reaction chamber; a supporting member configured to hold the wafer; a cleaning gas supplying mechanism provided in an outer periphery of the supporting member and configured to emit cleaning gas in an outer periphery direction below an upper end of the supporting member; a heater configured to heat the wafer; and a rotary driving mechanism configured to rotate the wafer.

摘要翻译： 一种半导体器件的制造装置，包括：反应室，被配置为在晶片上进行成膜; 工艺气体供给机构，设置在所述反应室的上部，并且被配置为将处理气体引入所述反应室的内部; 气体排出机构，设置在所述反应室的下部，并且构成为从所述反应室排出气体; 构造成保持晶片的支撑构件; 清洁气体供给机构，其设置在所述支撑部件的外周，并且构造成在所述支撑部件的上端的外周方向上排出清洗气体; 被配置为加热晶片的加热器; 以及旋转驱动机构，其构造成使晶片旋转。

公开(公告)号：US20120244684A1

公开(公告)日：2012-09-27

申请号：US13404117

申请日：2012-02-24

申请人： Kunihiko Suzuki ,  Hideki Ito

发明人： Kunihiko Suzuki ,  Hideki Ito

IPC分类号： H01L21/205 ,  C23C16/46 ,  C23C16/00

CPC分类号： H01L21/0262 ,  C23C16/45517 ,  C23C16/45591 ,  C23C16/46 ,  C30B25/02 ,  C30B25/08 ,  C30B25/10 ,  C30B29/36 ,  H01L21/0237 ,  H01L21/02532

摘要： A film-forming apparatus and method is provided that includes a reflector and insulator capable of suppressing the thermal degradation of components in close proximity to the heater in a film-forming apparatus. In a film-forming apparatus the reflector is used in combination with insulator. Specifically, in a film-forming apparatus a reflector is disposed below a heater with the insulator placed below the reflector. The insulator absorbs the radiant heat from the heater thus suppressing an excessive rise in temperature around the heater, it is therefore possible to prevent thermal degradation of components in close proximity of the heater. For example, when the temperature of a semiconductor substrate is 1650° C., the temperature of the quartz heater base maybe about 1000° C. This is lower than the softening point temperature of the quartz heater base, preventing deformation of the heater base.

摘要翻译： 提供了一种成膜装置和方法，其包括反射器和绝缘体，其能够抑制成膜装置中加热器附近的部件的热劣化。 在成膜设备中，反射器与绝缘体组合使用。 具体地，在成膜装置中，反射器设置在加热器下方，绝缘体位于反射器下方。 绝缘子吸收来自加热器的辐射热，从而抑制加热器周围温度的过度上升，因此可以防止加热器附近的部件的热劣化。 例如，当半导体基板的温度为1650℃时，石英加热器基座的温度可以为约1000℃。这低于石英加热器基座的软化点温度，从而防止加热器基座的变形。

公开(公告)号：US20120070577A1

公开(公告)日：2012-03-22

申请号：US13231265

申请日：2011-09-13

申请人： Kaori DEURA ,  Shinya Higashi ,  Kunihiko Suzuki ,  Hideki Ito

发明人： Kaori DEURA ,  Shinya Higashi ,  Kunihiko Suzuki ,  Hideki Ito

IPC分类号： C23C16/46 ,  B05C13/00 ,  B05C9/14

CPC分类号： C23C16/4584 ,  C23C16/46 ,  C30B25/10 ,  C30B29/403

摘要： A film-forming apparatus and film-forming method is provided that includes a reflector system capable of adjusting the temperature distribution of a substrate. The essential role of a reflector is to reduce the output of a heater by reflecting radiation heat from the heater and to protect members provided below the heater from heat. When a silicon wafer is heated by a first heater and a second heater, the temperature of the silicon wafer becomes higher in the inner circumferential part of the wafer rather than in the outer circumferential part of the silicon wafer. When a ring-shaped reflector is used, radiation heat is reflected by the ring-shaped portion, but is not reflected by the inner circumferential part of the reflector. Therefore, the use of a ring-shaped reflector makes it possible to allow a wafer to have an even heating distribution.

摘要翻译： 提供了一种成膜装置和成膜方法，其包括能够调节基板的温度分布的反射器系统。 反射器的重要作用是通过反射来自加热器的辐射热量来减少加热器的输出并且保护设置在加热器下面的部件免受热量的影响。 当硅晶片被第一加热器和第二加热器加热时，硅晶片的温度在晶片的内周部分而不是在硅晶片的外周部分变高。 当使用环形反射器时，辐射热被环形部分反射，但不被反射器的内周部分反射。 因此，使用环形反射器使得可以允许晶片具有均匀的加热分布。

公开(公告)号：US09598792B2

公开(公告)日：2017-03-21

申请号：US13527198

申请日：2012-06-19

申请人： Kunihiko Suzuki ,  Hideki Ito ,  Naohisa Ikeya ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Masahiko Ito ,  Masami Naito ,  Hiroaki Fujibayashi ,  Ayumu Adachi ,  Koichi Nishikawa

发明人： Kunihiko Suzuki ,  Hideki Ito ,  Naohisa Ikeya ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Masahiko Ito ,  Masami Naito ,  Hiroaki Fujibayashi ,  Ayumu Adachi ,  Koichi Nishikawa

IPC分类号： C30B25/10

CPC分类号： C30B25/10

摘要： A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

公开(公告)号：US09150981B2

公开(公告)日：2015-10-06

申请号：US12836189

申请日：2010-07-14

申请人： Kunihiko Suzuki ,  Hideki Ito

发明人： Kunihiko Suzuki ,  Hideki Ito

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C30B25/14 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  H01L21/02

CPC分类号： C30B25/14 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  H01L21/02532 ,  H01L21/0262

摘要： There is provided an apparatus for manufacturing a semiconductor device including a chamber in which a wafer is loaded; a gas supply mechanism for supplying process gas into the chamber; a gas discharge mechanism for discharging gas from the chamber; a heater having a slit and for heating the wafer to a predetermined temperature; a push-up base on which the wafer is mounted in an lifted state and housed in the slit in a lower state; a vertical rotation drive control mechanism for moving the push-up base up/down and rotating the push-up base in an lifted state; and a rotating member for rotating the wafer in a predetermined position and a rotation drive control mechanism connected to the rotating member.

摘要翻译： 提供了一种用于制造半导体器件的装置，其包括其中加载晶片的腔室; 用于将处理气体供给到所述室中的气体供给机构; 用于从所述室排出气体的气体排出机构; 具有狭缝并用于将晶片加热到预定温度的加热器; 上推基座，晶片以升起状态安装在该基座上并以较低的状态容纳在狭缝中; 垂直旋转驱动控制机构，用于上下移动上推基座，并且在提升状态下使上推基座旋转; 以及用于在预定位置旋转晶片的旋转构件和连接到旋转构件的旋转驱动控制机构。

公开(公告)号：US20110312187A1

公开(公告)日：2011-12-22

申请号：US13160209

申请日：2011-06-14

申请人： Kunihiko Suzuki ,  Hideki Ito

发明人： Kunihiko Suzuki ,  Hideki Ito

IPC分类号： H01L21/30 ,  B08B3/00 ,  C23C16/455

CPC分类号： B08B17/02 ,  C23C16/4405 ,  C23C16/4412 ,  H01L21/67109

摘要： A manufacturing apparatus for a semiconductor device, including: a reaction chamber configured to perform film formation on a wafer; a process gas supplying mechanism provided in an upper part of the reaction chamber and configured to introduce process gas to an interior of the reaction chamber; a gas discharging mechanism provided in a lower part of the reaction chamber and configured to discharge gas from the reaction chamber; a supporting member configured to hold the wafer; a cleaning gas supplying mechanism provided in an outer periphery of the supporting member and configured to emit cleaning gas in an outer periphery direction below an upper end of the supporting member; a heater configured to heat the wafer; and a rotary driving mechanism configured to rotate the wafer.

摘要翻译： 一种半导体器件的制造装置，包括：反应室，被配置为在晶片上进行成膜; 工艺气体供给机构，设置在所述反应室的上部，并且被配置为将处理气体引入所述反应室的内部; 气体排出机构，设置在所述反应室的下部，并且构成为从所述反应室排出气体; 构造成保持晶片的支撑构件; 清洁气体供给机构，其设置在所述支撑部件的外周，并且构造成在所述支撑部件的上端的外周方向上排出清洗气体; 被配置为加热晶片的加热器; 以及旋转驱动机构，其构造成使晶片旋转。