公开(公告)号：US20070263179A1

公开(公告)日：2007-11-15

申请号：US11660591

申请日：2006-06-20

申请人： Hideki Katsuragawa ,  Daisuke Okamoto ,  Mokuyoh Nakano ,  Masayuki Shimizu ,  Toshihiro Sunaga ,  Satoru Ohshio ,  Yuusuke Kawamura

发明人： Hideki Katsuragawa ,  Daisuke Okamoto ,  Mokuyoh Nakano ,  Masayuki Shimizu ,  Toshihiro Sunaga ,  Satoru Ohshio ,  Yuusuke Kawamura

IPC分类号： G03B21/14

CPC分类号： G03B21/005 ,  G03B21/145 ,  G03B33/12

摘要： A projection type display system able to suppress an increase of a outer size of a set, able to improve the contrast, and excellent in silence, having light modulating units 122 (R, G, B) for modulating incident illumination lights based on input image information and emitting the result, an illumination optical system 109 for making illumination lights from a light source 101 strike light modulating units, and a projection optical system 125 for projecting the illumination lights emitted from the light modulating units, wherein a variable opening aperture system 200 is arranged in the vicinity of a pupil position of the projection optical system 125, and the aperture system 200 is arranged so as to match contrast characteristics of the light modulating units and an aperture shape at the time of opening/closing the aperture.

摘要翻译： 能够抑制基于输入图像调制入射照明光的光调制单元122（R，G，B）能够抑制能够提高对比度的组的外部尺寸的增加和静音优异的投影型显示系统。 信息并发出结果，用于使来自光源101的照明光的照明光学系统109撞击光调制单元，以及用于投射从光调制单元发射的照明光的投影光学系统125，其中可变开口孔径系统200 布置在投影光学系统125的光瞳位置附近，并且孔径系统200被布置成与光调制单元的对比度特性和打开/关闭光圈时的孔径形状相匹配。

公开(公告)号：US20130147081A1

公开(公告)日：2013-06-13

申请号：US13811489

申请日：2011-07-20

申请人： Junghwan Hwang ,  Takeshi Hattori ,  Masaki Hirano ,  Masaki Sugiyama ,  Yusuke Oishi ,  Daisuke Okamoto ,  Hidenari Yamamoto

发明人： Junghwan Hwang ,  Takeshi Hattori ,  Masaki Hirano ,  Masaki Sugiyama ,  Yusuke Oishi ,  Daisuke Okamoto ,  Hidenari Yamamoto

IPC分类号： H01F41/02

CPC分类号： H01F41/0246 ,  B22F1/0077 ,  C22C2202/02 ,  H01F1/26 ,  H01F27/255 ,  H01F41/0266

摘要： The invention includes: powder preparation step of obtaining magnetic core powders by mixing, of magnetic powders with thermosetting resin powders in hot state; powder filling step of filling the obtained magnetic core powders into a die; a compaction step of compacting magnetic core powders; and compact heating step of heating, compacts to the elevated temperature state at which the thermosetting resin hardens after compaction.

摘要翻译： 本发明包括：粉末制备步骤，通过混合热磁性粉末热磁性粉末获得磁芯粉末; 粉末填充步骤，将获得的磁芯粉末填充到模具中; 压制磁芯粉末的压实步骤; 并且加热的紧凑加热步骤压实成在压实后热固性树脂硬化的高温状态。

公开(公告)号：US20110012221A1

公开(公告)日：2011-01-20

申请号：US12919638

申请日：2009-03-09

申请人： Junichi Fujikata ,  Toru Tatsumi ,  Akihito Tanabe ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi

发明人： Junichi Fujikata ,  Toru Tatsumi ,  Akihito Tanabe ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi

IPC分类号： H01L31/105

CPC分类号： H01L31/105 ,  G02B6/12004 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/03529 ,  Y02E10/547

摘要： The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode. In order to solve said problems, according to the present invention, there is provided a vertical type pin-SiGe photodiode having a structure which is embedded in a groove formed in a part of a Si layer, in which a p-type or n-type doped layer is formed in a lower section of the groove, and in which a i-SiGe layer having a rectangular shape or a reverse tapered shape is formed on a layered structure formed by laminating a i-Si layer and a SiGe buffer layer on the lower section and the side wall of the groove. Further, in an optical connection section with a Si waveguide, impedance matching is effected by the layered structure composed of the i-Si layer and the SiGe buffer layer, and an upper metal layer is separated therefrom so that a poly-Si bridge structure is employed to electrically connect the upper metal layer therewith.

摘要翻译： Ge层与Si层之间的晶格失配大至4％左右。 因此，当Ge层在Si层上生长时，引入穿透位错以在p-i-n结处引起漏电流。 因此，光检测灵敏度降低，并且元件的可靠性也降低。 此外，在与Si波导的连接中，还存在由于Si和Ge之间的折射率的差异以及由金属电极引起的吸收损耗的反射损耗的问题。 为了解决所述问题，根据本发明，提供了一种垂直型pin-SiGe光电二极管，其具有嵌入到形成在Si层的一部分中的凹槽中的结构，其中p型或n- 在沟槽的下部形成有型掺杂层，其中在通过层叠i-Si层和SiGe缓冲层而形成的层叠结构上形成具有矩形或倒锥形的i-SiGe层 凹槽的下部和侧壁。 此外，在具有Si波导的光学连接部中，通过由i-Si层和SiGe缓冲层构成的层叠结构实现阻抗匹配，并且将上部金属层与其分离，使得多Si桥结构 用于将上部金属层电连接到其上。

公开(公告)号：US20110003048A1

公开(公告)日：2011-01-06

申请号：US12866705

申请日：2008-12-17

申请人： Naoki Sugimoto ,  Akio Hokimoto ,  Tetsuya Matsuoka ,  Naomi Shimomura ,  Daisuke Okamoto

发明人： Naoki Sugimoto ,  Akio Hokimoto ,  Tetsuya Matsuoka ,  Naomi Shimomura ,  Daisuke Okamoto

IPC分类号： A47J27/62 ,  A47J27/086 ,  A23L1/01

CPC分类号： A47J27/086 ,  A47J27/004

摘要： An electric rice cooker capable of increasing the water content of rice by a simple structure. The electric rice cooker (1) has a pot (10) in which food substances to be cooked including water and rice are contained, heating device (5, 6, 19) for heating the food substances to be cooked in the pot, a lid (11) for closing the opening of the pot, and a controller (9) for performing rice cooking steps including a water absorption step for allowing the rice to absorb the water by controlling the heating devices. The controller (9) raises the internal pressure of the pot (10) to 1.05-1.18 atm in the water absorbing step to allow the rice to absorb the water.

摘要翻译： 一种能够通过简单结构增加水稻含水量的电饭煲。 电饭煲（1）具有容纳烹调食品的水壶（10），其中包含水和米饭的烹调食物，用于加热在锅中烹调的食物的加热装置（5,6,19），盖 （11），以及用于进行包括通过控制加热装置允许米吸收水的吸水步骤的米饭烹调步骤的控制器（9）。 控制器（9）在吸水步骤中将罐（10）的内部压力升高到1.05-1.18atm，以允许米吸收水分。

公开(公告)号：US20100119192A1

公开(公告)日：2010-05-13

申请号：US12598162

申请日：2008-04-30

申请人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

发明人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

IPC分类号： G02B6/12 ,  H01L31/0232

CPC分类号： H01L31/022408 ,  B82Y20/00 ,  G02B6/1226 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/02325

摘要： In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

摘要翻译： 在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。 由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。 电极以（1/100）λ至λ[λ：通过光波导路径芯透射的光的波长]的间隔布置。 至少一部分电极嵌入在半导体光吸收层中。 从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。 至少一层电极由可以表面等离子体激发的材料构成。

公开(公告)号：US20140104023A1

公开(公告)日：2014-04-17

申请号：US13825856

申请日：2011-09-23

申请人： Bai Yang ,  Ronghai Yu ,  Satoshi Okochi ,  Daisuke Okamoto

发明人： Bai Yang ,  Ronghai Yu ,  Satoshi Okochi ,  Daisuke Okamoto

IPC分类号： H01F1/26

CPC分类号： H01F1/26 ,  B22F1/02 ,  C22C2202/02 ,  H01F1/33 ,  H01F41/0246 ,  Y10T428/2998

摘要： The present invention discloses a composite soft magnetic powder core and a preparation method therefor, which belong to the technical fields of soft magnetic materials and preparation thereof. An Fe/Fe3O4 shell layer is generated in situ on surfaces of iron powder particles through a controlled oxidation process, to prepare Fe/Fe3O4 composite soft magnetic powder having a uniform structure. The Fe/Fe3O4 composite soft magnetic powder is mixed with suitable amount of silicone resin, and prepared into a high-performance Fe/Fe3O4 composite soft magnetic powder core by using a powder metallurgy compaction process. Such magnetic powder core has a high density, a high magnetic conductivity, a high magnetic flux density, a low loss, and a high breaking strength, and is useful in a large-power and low-loss application scenario. The present invention has the advantages of being rich in raw material resources, simple in process and environmentally friendly, and being suitable for industrial production.

摘要翻译： 本发明公开了一种复合软磁粉芯及其制备方法，属于软磁材料及其制备技术领域。 通过控制氧化工艺在铁粉颗粒的表面上原位产生Fe / Fe 3 O 4壳层，制备具有均匀结构的Fe / Fe 3 O 4复合软磁粉末。 将Fe / Fe 3 O 4复合软磁粉与适量的硅树脂混合，通过粉末冶金压实法制备成高性能Fe / Fe3O4复合软磁粉末芯。 这种磁粉芯具有高密度，高导磁率，高磁通密度，低损耗和高断裂强度，并且在大功率和低损耗应用场景中是有用的。 本发明具有原料资源丰富，工艺简单，环保，适用于工业生产的优点。

公开(公告)号：US08466528B2

公开(公告)日：2013-06-18

申请号：US13003792

申请日：2009-06-23

申请人： Daisuke Okamoto ,  Junichi Fujikata

发明人： Daisuke Okamoto ,  Junichi Fujikata

IPC分类号： H01L31/0232

CPC分类号： H01L31/1085 ,  H01L31/02325

摘要： Provided is a high-speed and highly efficient semiconductor light-receiving element with small dependence on an incident light polarization direction. A semiconductor light-receiving element according to one aspect of the present invention includes a semiconductor layer including a light-absorbing layer 4, an MSM electrode 1 that is provided over the semiconductor layer, forms a Schottky junction with the semiconductor layer, and includes a slit-like opening, an anti-reflective film 2 formed over the semiconductor layer and the MSM electrode 1, and a Bragg reflection multilayer film 6 provided to a lower part of the semiconductor layer. The MSM electrode 1 includes a period capable of exciting surface plasmon to incident light of TM polarization, and obtains sufficient transmittance to the incident light of TE polarization.

摘要翻译： 提供了一种对入射光偏振方向具有小依赖性的高速高效半导体光接收元件。 根据本发明的一个方面的半导体光接收元件包括：半导体层，包括光吸收层4，设置在半导体层上的MSM电极1，与半导体层形成肖特基结，并且包括： 形成在半导体层上的抗反射膜2和MSM电极1，以及设置在半导体层的下部的布拉格反射多层膜6。 MSM电极1包括能够激发表面等离子体激发到TM偏振的入射光的时段，并且对TE偏振的入射光获得足够的透射率。

公开(公告)号：US08183656B2

公开(公告)日：2012-05-22

申请号：US12518729

申请日：2007-12-13

申请人： Daisuke Okamoto ,  Junichi Fujikata ,  Kenichi Nishi ,  Keishi Ohashi

发明人： Daisuke Okamoto ,  Junichi Fujikata ,  Kenichi Nishi ,  Keishi Ohashi

IPC分类号： H01L31/322

CPC分类号： H01L31/1085 ,  H01L31/022408 ,  H01L31/02325

摘要： A photodiode includes: an upper spacer layer including a semiconductor transparent to incident light; a metal periodic structure provided on the upper spacer layer and arranged to induce surface plasmon, the metal periodic structure including first and second electrodes including portions arranged alternately on the upper spacer layer; a light absorption layer formed under the upper spacer layer and including a semiconductor having a refractive index higher than that of the upper spacer layer; and a lower spacer layer formed under the light absorption layer and having a refractive index smaller than that of the light absorption layer. Each of the first and second electrodes forms a Schottky barrier junction with the upper spacer layer.

摘要翻译： 光电二极管包括：包括对入射光透明的半导体的上间隔层; 金属周期结构，设置在上间隔层上并且布置成诱导表面等离子体激元，金属周期结构包括第一和第二电极，包括交替设置在上间隔层上的部分; 形成在所述上间隔层下方并且具有折射率高于所述上间隔层的折射率的半导体的光吸收层; 以及形成在光吸收层下面并且具有比光吸收层的折射率小的折射率的下间隔层。 第一和第二电极中的每一个与上间隔层形成肖特基势垒结。

公开(公告)号：US08026947B2

公开(公告)日：2011-09-27

申请号：US12247557

申请日：2008-10-08

申请人： Daisuke Okamoto ,  Hisao Kai

发明人： Daisuke Okamoto ,  Hisao Kai

IPC分类号： H04N5/228 ,  H04N5/225 ,  G03B17/00

CPC分类号： H04N5/2253 ,  H04N5/23248 ,  H04N5/23258 ,  H04N5/2328

摘要： This image sensor includes a flexible wiring board connected with an optical sensor, bent around the portion connected with the optical sensor and so formed as to generate urging force oppositely to the bent direction and a support portion having a first support surface supporting the optical sensor. The optical sensor is urged toward the first support surface of the support portion to be fixed thereto due to the urging force of the flexible wiring board arranged in the bent manner.

摘要翻译： 该图像传感器包括与光学传感器连接的柔性布线板，围绕与光学传感器连接的部分弯曲并形成为产生与弯曲方向相反的推力;以及支撑部分，其具有支撑光学传感器的第一支撑表面。 由于柔性布线板以弯曲的方式布置的作用力，光学传感器被迫朝着支撑部分的第一支撑表面被固定到其上。

公开(公告)号：US20100308428A1

公开(公告)日：2010-12-09

申请号：US12811863

申请日：2009-01-09

申请人： Daisuke Okamoto ,  Junichi Fujikata ,  Kenichi Nishi

发明人： Daisuke Okamoto ,  Junichi Fujikata ,  Kenichi Nishi

IPC分类号： H01L31/0232 ,  H01L31/0352 ,  H01L31/0216

CPC分类号： H01L31/03529 ,  H01L31/02165 ,  Y02E10/50

摘要： A semiconductor light receiving element comprises: a substrate, a semiconductor layer of a first conductivity type formed on the substrate, a non-doped semiconductor light absorbing layer formed on the semiconductor layer of the first conductivity type, a semiconductor layer of a second conductivity type formed on the non-doped semiconductor light absorbing layer, and an electro-conductive layer formed on the semiconductor layer of the second conductivity type. A plurality of openings, periodically arrayed, are formed in a laminated body composed of the electro-conductive layer, the semiconductor layer of the second conductivity type, and the non-doped semiconductor light absorbing layer. The widths of the openings are less than or equal to the wavelength of incident light, and the openings pass through the electro-conductive layer and the semiconductor layer of the second conductivity type to reach the non-doped semiconductor light absorbing layer.

摘要翻译： 半导体光接收元件包括：基板，形成在基板上的第一导电类型的半导体层，形成在第一导电类型的半导体层上的非掺杂半导体光吸收层，第二导电类型的半导体层 形成在非掺杂半导体光吸收层上的导电层和形成在第二导电类型的半导体层上的导电层。 周期排列的多个开口形成在由导电层，第二导电类型的半导体层和非掺杂半导体光吸收层组成的层叠体中。 开口的宽度小于或等于入射光的波长，并且开口穿过导电层和第二导电类型的半导体层以到达非掺杂半导体光吸收层。