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公开(公告)号：US5225397A
公开(公告)日：1993-07-06
申请号：US806822
申请日：1991-12-06
申请人： Hideo Itozaki , Saburo Tanaka , Kenjiro Higaki , Hisao Hattori , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
发明人： Hideo Itozaki , Saburo Tanaka , Kenjiro Higaki , Hisao Hattori , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
CPC分类号： C23C14/087 , C04B35/4512 , H01L39/126 , H01L39/2419 , H01L39/2435 , H01L39/2464 , Y10S505/731 , Y10S505/816
摘要： A superconducting material composed mainly of compound oxide having a composition represented by the general formula:Tl.sub.x Ca.sub.y BaCu.sub.z O.sub.pin which "x", "y" and "z" are numbers each satisfies 0.5.ltoreq.x.ltoreq.3.0, 0.5.ltoreq.y.ltoreq.3.0, and 0.9.ltoreq.z.ltoreq.4.0 respectively.
摘要翻译： 主要由复合氧化物组成的超导材料，其具有由以下通式表示的组成：TlxCayBaCuzOp，其中“x”，“y”和“z”各自为数，其分别满足0.5≤x≤3.0,0≤y 分别为
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公开(公告)号：US5028583A
公开(公告)日：1991-07-02
申请号：US286860
申请日：1988-12-20
申请人： Saburo Tanaka , Hideo Itozaki , Kenjiro Higaki , Shuji Yazu , Tetsuji Jodai
发明人： Saburo Tanaka , Hideo Itozaki , Kenjiro Higaki , Shuji Yazu , Tetsuji Jodai
CPC分类号： H01L39/2435 , H01L39/143 , Y10S428/901 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704 , Y10T428/24917 , Y10T428/31 , Y10T428/31678
摘要： Improvement in a superconducting thin film of compound oxide represented by the formula: LnBa.sub.2 Cu.sub.3 O.sub.7- .delta. (Ln is lanthanide) or (La.sub.1-x .alpha..sub.x).sub.2 CuO.sub.4 (.alpha. is Ba or Sr) deposited on a substrate or core made of MgO, SrTiO.sub.3 or ZrO.sub.2 by physical vapor deposition technique, the surface roughness R.sub.max (datum length=1,000 .mu.m) of the superconducting thin film being less than 0.2 .mu.m.
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公开(公告)号：US5169829A
公开(公告)日：1992-12-08
申请号：US873351
申请日：1992-04-21
申请人： Nobuhiko Fujita , Hideo Itozaki , Saburo Tanaka , Naoji Fujimori , Takahiro Imai , Keizo Harada , Shuji Yazu , Tetsuji Jodai , Noriyuki Yoshida , Satoshi Takano , Kenji Miyazaki , Noriki Hayashi
发明人： Nobuhiko Fujita , Hideo Itozaki , Saburo Tanaka , Naoji Fujimori , Takahiro Imai , Keizo Harada , Shuji Yazu , Tetsuji Jodai , Noriyuki Yoshida , Satoshi Takano , Kenji Miyazaki , Noriki Hayashi
IPC分类号： H01L39/24
CPC分类号： H01L39/249 , H01L39/2435 , H01L39/2464 , Y10S505/73 , Y10S505/742
摘要： An improvement in a process for manufacturing a superconductor, characterized by irradiating a material composed of compound oxide by one of ion beams selected from oxygen ion beam, inert gas ion beams and an ion beam consisting of a mixture of oxygen gas and inert gas to convert said material into a superconductor. When a focused ion beam is directed onto desired areas on said film layer, the areas irradiated by the ion beam are converted to a superconductor in a form of a superconducting circuit.
摘要翻译： 一种制造超导体的方法的改进，其特征在于，通过从氧离子束，惰性气体离子束和由氧气和惰性气体的混合物组成的离子束中的一种离子束照射由复合氧化物组成的材料，以转换 将材料称为超导体。 当聚焦离子束被引导到所述膜层上的所需区域上时，由离子束照射的区域被转换为超导电路形式的超导体。
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公开(公告)号：US5252543A
公开(公告)日：1993-10-12
申请号：US648964
申请日：1991-01-31
申请人： Saburo Tanaka , Hideo Itozaki , Kenjiro Higaki , Shuji Yazu , Tetsuji Jodai
发明人： Saburo Tanaka , Hideo Itozaki , Kenjiro Higaki , Shuji Yazu , Tetsuji Jodai
CPC分类号： H01L39/143 , H01L39/2435 , Y10S428/93 , Y10S505/701 , Y10S505/704
摘要： Improvement in a superconducting thin film of compound oxide represented by the formula: LnBa.sub.2 Cu.sub.3 O.sub.7- .delta. (Ln is lanthanide) or (La.sub.1-x .alpha..sub.x).sub.2 CuO.sub.4 (.alpha. is Ba or Sr) deposited on a substrate or core made of MgO, SrTiO.sub.3 or ZrO.sub.2 by physical vapor deposition technique, the surface roughness R.sub.max (datum length=1,000 .mu.m) of the superconducting thin film being less than 0.2 .mu.m.
摘要翻译： 由式：LnBa2Cu3O7-δ（Ln是镧系元素）或（La1-xαx）2CuO4（α是Ba或Sr）表示的复合氧化物超导薄膜的改进，沉积在由MgO，SrTiO 3或 ZrO2，通过物理气相沉积技术，超导薄膜的表面粗糙度Rmax（基准长度=1000μm）小于0.2μm。
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5.发明授权
公开(公告)号：US5236894A
公开(公告)日：1993-08-17
申请号：US950922
申请日：1992-09-24
申请人： Saburo Tanaka , Hideo Itozaki , Kenjiro Higaki , Shuji Yazu , Tetsuji Jodai
发明人： Saburo Tanaka , Hideo Itozaki , Kenjiro Higaki , Shuji Yazu , Tetsuji Jodai
CPC分类号： C23C14/087 , H01L39/2435 , Y10S505/731 , Y10S505/816
摘要： A process for depositing a superconducting thin film composed mainly of compound oxide such as LnBa.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) or (La.sub.1-x .alpha..sub.x).sub.2 CuO.sub.4 (.alpha. is Ba or Sr) on a substrate such as MgO, SrTiO.sub.3 or silicon by sputtering technique, characterized in that a negative bias is applied to the substrate during the sputtering stage without heating the substrate.
摘要翻译： 将诸如LnBa2Cu3O7-δ（Ln是镧系元素）或（La1-xa x）2CuO4（α是Ba或Sr）的复合氧化物主要由MgO，SrTiO3或硅基底沉积的超导薄膜的方法由 溅射技术，其特征在于在溅射阶段期间对基板施加负偏压，而不加热基板。
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6.发明授权Semiconductor substrate having a superconducting thin film with a buffer layer in between 失效半导体衬底具有介于其间的缓冲层的超导薄膜
公开(公告)号：US5179070A
公开(公告)日：1993-01-12
申请号：US726124
申请日：1991-07-02
申请人： Keizo Harada , Hideo Itozaki , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
发明人： Keizo Harada , Hideo Itozaki , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
IPC分类号： H01L39/24
CPC分类号： H01L39/2461
摘要： A semiconductor substrate such as silicon single crystal having a thin film of a superconducting material composed of a compound oxide whose critical temperature is higher than 30 K such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is Y or lanthanide), characterized in that a buffer layer composed of ZrO.sub.2, MgO containing or not containing metal element such as Ag is interposed between the semiconductor substrate and the superconducting thin film.
摘要翻译： 具有由临界温度高于30K的复合氧化物如Ln1Ba2Cu3O7-δ（Ln是Y或镧系元素）组成的超导材料的薄膜的半导体衬底，其特征在于，由 含有或不含有金属元素如Ag的ZrO 2，被置于半导体衬底和超导薄膜之间。
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公开(公告)号：US5401715A
公开(公告)日：1995-03-28
申请号：US972903
申请日：1992-11-06
申请人： Hideo Itozaki , Keizo Harada , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
发明人： Hideo Itozaki , Keizo Harada , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
CPC分类号： H01L39/143 , H01L39/2458 , Y10S428/93 , Y10S505/701 , Y10S505/706 , Y10T428/12528 , Y10T428/12611
摘要： A semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) and stratified on the silicon substrate, characterized in that an intermediate semiconductor layer composed of compound semiconductor material such as GaAs is interposed between the silicon substrate and the superconducting thin film layer.
摘要翻译： 具有硅衬底的半导体衬底和由诸如Ln1Ba2Cu3O7-δ（Ln是镧系元素）的复合氧化物构成的层叠在硅衬底上的超导薄膜层，其特征在于由诸如GaAs的化合物半导体材料构成的中间半导体层是 介于硅衬底和超导薄膜层之间。
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公开(公告)号：US5910662A
公开(公告)日：1999-06-08
申请号：US167437
申请日：1993-12-14
申请人： Hideo Itozaki , Keizo Harada , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
发明人： Hideo Itozaki , Keizo Harada , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
CPC分类号： H01L39/2458 , H01L39/146
摘要： A semiconductor substrate comprising a single crystal substrate base such a silicon and a superconducting thin film layer deposited on said substrate base and composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta.. (Ln is lanthanide).
摘要翻译： 一种半导体衬底，其包括单晶衬底基底如硅和沉积在所述衬底基底上并由诸如Ln1Ba2Cu3O7-δ的复合氧化物组成的超导薄膜层。 （Ln是镧系元素）。
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公开(公告)号：US5221660A
公开(公告)日：1993-06-22
申请号：US856824
申请日：1992-03-25
申请人： Hideo Itozaki , Keizo Harada , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
发明人： Hideo Itozaki , Keizo Harada , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
CPC分类号： H01L39/143 , H01L39/2458 , Y10S428/93 , Y10S505/701 , Y10S505/706 , Y10T428/12528 , Y10T428/12611
摘要： A semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) and stratified on the silicon substrate, characterized in that an intermediate semiconductor layer composed of compound semiconductor material such as GaAs is interposed between the silicon substrate and the superconducting thin film layer.
摘要翻译： 具有硅衬底的半导体衬底和由诸如Ln1Ba2Cu3O7-δ（Ln是镧系元素）的复合氧化物构成的层叠在硅衬底上的超导薄膜层，其特征在于由诸如GaAs的化合物半导体材料构成的中间半导体层是 介于硅衬底和超导薄膜层之间。
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公开(公告)号：US5814583A
公开(公告)日：1998-09-29
申请号：US673022
申请日：1996-07-01
申请人： Hideo Itozaki , Saburo Tanaka , Nobuhiko Fujita , Shuji Yazu , Tetsuji Jodai
发明人： Hideo Itozaki , Saburo Tanaka , Nobuhiko Fujita , Shuji Yazu , Tetsuji Jodai
IPC分类号： C01G3/00 , C01B13/14 , C01G1/00 , C04B41/89 , C23C14/08 , C23C16/30 , H01B3/00 , H01B12/06 , H01B13/00 , H01L39/12 , H01L39/24 , H01L39/00
CPC分类号： H01L39/24 , H01L39/2435 , H01L39/247 , Y10S428/93 , Y10S505/701 , Y10S505/704 , Y10S505/73 , Y10S505/731 , Y10S505/732
摘要： A high-temperature superconducting thin film of compound oxide selected from the group consisting of: Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Ho.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Lu.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Sm.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Nd.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Gd.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Eu.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Er.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Dy.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Tm.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, Yb.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, La.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, (La, Sr).sub.2 CuO.sub.4-x, which is deposited on a substrate of MgO or SrTiO.sub.3, with the outer surface of the high-temperature superconducting thin film being covered with a protective crystalline film of SrTiO.sub.3.
摘要翻译： 选自由以下组成的组的复合氧化物的高温超导薄膜：Y1Ba2Cu3O7-x，Ho1Ba2Cu3O7-x，Lu1Ba2Cu3O7-x，Sm1Ba2Cu3O7-x，Nd1Ba2Cu3O7-x，Gd1Ba2Cu3O7-x，Eu1Ba2Cu3O7-x，Er1Ba2Cu3O7-x，Dy1Ba2Cu3O7 -x，Tm1Ba2Cu3O7-x，Yb1Ba2Cu3O7-x，La1Ba2Cu3O7-x，（La，Sr）2CuO4-x，其被沉积在MgO或SrTiO 3的衬底上，高温超导薄膜的外表面被覆盖 SrTiO3的保护性结晶膜。
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