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142 条记录 (耗时 0.025 秒)

    A.C. type timer circuit
    1.
    发明授权
    A.C. type timer circuit 失效
    A.C.型定时器电路

    公开(公告)号：US4002929A

    公开(公告)日：1977-01-11

    申请号：US589704

    申请日：1975-06-23

    申请人： Hideo Suemasa ,  Kazuyoshi Honda ,  Katsuhiko Fukutake ,  Kenichi Yoda

    发明人： Hideo Suemasa ,  Kazuyoshi Honda ,  Katsuhiko Fukutake ,  Kenichi Yoda

    IPC分类号： H01H47/18 ,  H03K17/292 ,  H03K17/72

    CPC分类号： H03K17/292

    摘要： Contactless two-line type timer circuit operable stably for a load of even a small current. In the circuit comprising substantially a full-wave rectifying circuit connected through the load to AC source, a thyristor connected across output terminals of the rectifying circuit and means for applying pulses to the gate of the thyristor after a predetermined time period, a first resistance is inserted between the cathode of the thyristor and negative side output terminal of the rectifying circuit and a second resistance is inserted between the gate of the thyristor and said negative side output terminal so as to allow the thyristor to be of a lower gate sensitivity and to be capable of keeping the gate voltage of the thyristor always larger than the cathode voltage.

    摘要翻译： 非接触式二线式定时器电路可以稳定地工作，用于甚至是小电流的负载。 在基本上包括通过负载连接到AC源的全波整流电路的电路中，连接在整流电路的输出端上的晶闸管和在预定时间段之后向晶闸管的栅极施加脉冲的装置，第一电阻为 插入在晶闸管的阴极和整流电路的负侧输出端子之间，并且在晶闸管的栅极和所述负侧输出端子之间插入第二电阻，以允许晶闸管具有较低的栅极灵敏度，并且为 能够保持晶闸管的栅极电压总是大于阴极电压。

    DEPOSITION QUANTITY MEASURING APPARATUS, DEPOSITION QUANTITY MEASURING METHOD, AND METHOD FOR MANUFACTURING ELECTRODE FOR ELECTROCHEMICAL ELEMENT
    6.
    发明申请
    DEPOSITION QUANTITY MEASURING APPARATUS, DEPOSITION QUANTITY MEASURING METHOD, AND METHOD FOR MANUFACTURING ELECTRODE FOR ELECTROCHEMICAL ELEMENT 有权
    沉积量测量装置，沉积量测量方法和电化学元件电极制造方法

    公开(公告)号：US20120121794A1

    公开(公告)日：2012-05-17

    申请号：US13384928

    申请日：2010-07-02

    申请人： Hiromasa Yagi ,  Kazuyoshi Honda

    发明人： Hiromasa Yagi ,  Kazuyoshi Honda

    IPC分类号： C23C16/52 ,  B05D5/12 ,  H01J37/26

    CPC分类号： H01M4/139 ,  C23C14/14 ,  C23C14/545 ,  C23C14/562 ,  H01G11/22 ,  H01G11/50 ,  H01G11/86 ,  H01M4/0423 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54

    摘要： A manufacturing method according to the present invention includes a step of allowing lithium to deposit on a substrate provided with a layer capable of forming a compound together with lithium. A first beta ray and a second beta ray are emitted toward the substrate for irradiation before the deposition step to measure backscattering, from the substrate, of the first beta ray and the second beta ray. The first beta ray and the second beta ray are emitted toward the substrate for irradiation after the deposition step to measure backscattering, from the substrate, of the first beta ray and the second beta ray. A decrement in backscattering of the first beta ray before and after lithium deposition and a decrement in backscattering of the second beta ray before and after lithium deposition are calculated. The deposition step is controlled depending on the decrement in the backscattering of the first beta ray and the decrement in the backscattering of the second beta ray.

    摘要翻译： 根据本发明的制造方法包括允许锂沉积在具有与锂一起形成化合物的层的基材上的步骤。 在沉积步骤之前，向衬底发射第一个β射线和第二个β射线，以便从衬底测量第一个β射线和第二个β射线的反向散射。 第一β射线和第二β射线在沉积步骤之后朝向衬底发射用于照射，以测量来自衬底的第一β射线和第二β射线的后向散射。 计算在锂沉积之前和之后第一次β射线的后向散射减少以及在锂沉积之前和之后的第二次β射线的后向散射的减小。 沉积步骤根据第一β射线的反向散射的减小和第二β射线的后向散射的减量来控制。

    Negative electrode for lithium secondary battery, lithium secondary battery using same, and methods for manufacturing those
    8.
    发明授权
    Negative electrode for lithium secondary battery, lithium secondary battery using same, and methods for manufacturing those 有权
    锂二次电池用负极，使用其的锂二次电池及其制造方法

    公开(公告)号：US08076027B2

    公开(公告)日：2011-12-13

    申请号：US11814694

    申请日：2006-01-23

    申请人： Kazuyoshi Honda ,  Yuuko Ogawa ,  Yasutaka Kogetsu

    发明人： Kazuyoshi Honda ,  Yuuko Ogawa ,  Yasutaka Kogetsu

    IPC分类号： H01M4/58

    CPC分类号： H01M10/0525 ,  H01M2/16 ,  H01M4/1315 ,  H01M4/134 ,  H01M4/386 ,  H01M4/387 ,  H01M4/66 ,  Y10T29/49115

    摘要： A negative electrode for a secondary battery includes a separator; a negative electrode active material layer which is fixed to the separator and can store and emit lithium ions; and a current collector layer formed on the side of the separator opposite to the negative electrode active material layer. The negative electrode active material layer contains at least one selected from the group consisting of silicon, silicon alloys, compounds containing silicon and oxygen, compounds containing silicon and nitrogen, compounds containing silicon and fluorine, tin, tin alloys, compounds containing tin and oxygen, compounds containing tin and nitrogen, and compounds containing tin and fluorine.

    摘要翻译： 二次电池用负极包括隔板; 负极活性物质层，其固定在隔板上并能够存储和放出锂离子; 以及形成在隔板的与负极活性物质层相反的一侧的集电体层。 负极活性物质层含有选自硅，硅合金，含硅和氧的化合物，含硅和氮的化合物，含硅和氟的化合物，锡，锡合金，含锡和氧的化合物中的至少一种， 含锡和氮的化合物，以及含锡和氟的化合物。

    METHOD FOR FORMING DEPOSITED FILM
    9.
    发明申请
    METHOD FOR FORMING DEPOSITED FILM 审中-公开
    形成沉积膜的方法

    公开(公告)号：US20110014519A1

    公开(公告)日：2011-01-20

    申请号：US12866652

    申请日：2009-02-06

    申请人： Sadayuki Okazaki ,  Kazuyoshi Honda

    发明人： Sadayuki Okazaki ,  Kazuyoshi Honda

    IPC分类号： H01M4/02 ,  H01M4/04

    CPC分类号： C23C14/225 ,  C23C14/562 ,  H01M10/0525 ,  H01M10/058

    摘要： The present invention provides a vacuum deposition apparatus configured to simultaneously form a power collecting lead forming portion and an electrode active material portion of a lithium-ion secondary battery and having excellent mass productivity. With shutters 12a and 12b closed, a substrate 4 winding around a first roll 3 is unroll to be conveyed to a second roll 8, and the substrate 4 stops when it reaches first and second deposition possible regions 60a and 60b. Here, the shutter 12a opens, and a deposition material in a crucible of an evaporation source 9 is evaporated to be supplied to a surface of the substrate 4 which is located in the first deposition possible region 60a. With this, a first layer is formed as a deposited film on the surface of the substrate 4. After the deposition is carried out with respect to the substrate 4 for a predetermined period of time, the shutter 12a is closed. Next, the substrate 4 is again conveyed and stops when the portion on which the deposition has been carried out in the first deposition possible region 60a has reached the second deposition possible region 60b. The shutters 12a and 12b open, and the deposition is carried out again. Thus, the first layer is formed in the first deposition possible region 60a, and the second layer having a different growth direction from the first layer is formed as the deposited film on the first layer in the second deposition possible region 60b.

    摘要翻译： 本发明提供一种真空沉积装置，其配置为同时形成锂离子二次电池的集电引线形成部分和电极活性材料部分，并且具有优异的批量生产率。 随着快门12a和12b关闭，围绕第一辊3卷绕的基板4被展开以被输送到第二辊8，并且当基板4到达第一和第二可沉积可能区域60a和60b时停止。 这里，快门12a打开，并且蒸发源9的坩埚中的沉积材料被蒸发以供应到位于第一沉积可能区域60a中的基板4的表面。 由此，在基板4的表面上形成作为沉积膜的第一层。在相对于基板4进行预定时间的沉积之后，关闭闸门12a。 接下来，当在第一沉积可能区域60a中已经进行沉积的部分已经到达第二沉积可能区域60b时，基板4再次被传送并停止。 快门12a和12b打开，再次进行沉积。 因此，第一层形成在第一沉积可能区域60a中，并且具有与第一层不同的生长方向的第二层作为沉积膜形成在第二沉积可能区域60b中的第一层上。

    METHOD FOR MANUFACTURING ELECTROCHEMICAL ELEMENT ELECTRODE
    10.
    发明申请
    METHOD FOR MANUFACTURING ELECTROCHEMICAL ELEMENT ELECTRODE 审中-公开
    电化学元件电极的制造方法

    公开(公告)号：US20100330420A1

    公开(公告)日：2010-12-30

    申请号：US12865076

    申请日：2008-12-16

    申请人： Yuko Ogawa ,  Kazuyoshi Honda

    发明人： Yuko Ogawa ,  Kazuyoshi Honda

    IPC分类号： H01M4/13 ,  H01M4/04 ,  B05D5/12

    CPC分类号： H01M4/70 ,  H01M4/0421 ,  H01M4/133 ,  H01M4/1391 ,  H01M4/1393 ,  H01M10/0525

    摘要： Includes the steps of preparing a sheet-like current collector 4 having a plurality of bumps 4A on a surface thereof, the plurality of bumps having a height of 3 μm or greater and 10 μm or less; and forming an active material body having a stacked structure on each of the bumps 4A of the current collector 4. The step of forming the active material body includes a first layer vapor deposition step of causing a vaporized vapor deposition material to be incident on the surface of the current collector 4 in a direction inclined with respect to the normal H to the current collector 4 to form a first layer 101a of the active material body on each bump 4A, the first layer 101a being located closest to the current collector; and a second layer vapor deposition step of causing the vaporized vapor deposition material to be incident on the surface of the current collector 4 in a direction inclined, with respect to the normal H to the current collector 4, opposite to the incidence direction of the vapor deposition material in the first layer vapor deposition step to form a second layer 102a on at least a part of the first layer 101a. In the first layer vapor deposition step, vapor deposition is performed while moving the current collector 4 in a direction in which the incidence angle ω of the vapor deposition material with respect to the normal H to the current collector 4 is decreased.

    摘要翻译： 包括在其表面上制备具有多个凸起4A的片状集电体4的步骤，多个凸起的高度为3μm以上且10μm以下; 并且在集电体4的每个凸起4A上形成具有层叠结构的活性物质体。形成活性物质体的步骤包括使蒸发的气相沉积材料入射到表面上的第一层气相沉积步骤 在相对于集电体4相对于法线H倾斜的方向上形成集电体4，以在每个凸块4A上形成活性物质体的第一层101a，第一层101a位于最靠近集电体的位置; 以及第二层气相沉积步骤，使蒸发的气相沉积材料以相对于集电体4的法线H倾斜的方向入射在集电体4的表面上，该方向与蒸气的入射方向相反 沉积材料在第一层气相沉积步骤中以在第一层101a的至少一部分上形成第二层102a。 在第一层气相沉积步骤中，在使集电体4沿蒸镀材料相对于正常H的入射角ω向集电体4减小的方向移动的同时进行蒸镀。