-
公开(公告)号：US09157144B2
公开(公告)日：2015-10-13
申请号：US12652340
申请日：2010-01-05
CPC分类号： C23C14/044
摘要： It comprises a mask (11) having a first, a second and a third action edge (11a, 11b, 11c), and a drive means for moving the mask (11) relative to a substrate (12) in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120° to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film 13.
摘要翻译： 它包括具有第一，第二和第三作用边缘（11a，11b，11c）的掩模（11）和用于沿着单轴方向（A（A））移动掩模（11）相对于基板（12）的驱动装置 ），由此以固定的移动速度移动掩模以使得边缘连续地作用在相同的基底区域上，同时连续施加不同的材料，连续地形成三个分量的薄膜，各自的膜厚度梯度在三个不同的方向上互相间隔开 以120°的角度使得这些膜重叠，由此形成三元相图薄膜13。
-
公开(公告)号：US20100151128A1
公开(公告)日：2010-06-17
申请号：US12652340
申请日：2010-01-05
IPC分类号： B05D1/32
CPC分类号： C23C14/044
摘要： It comprises a mask (11) having a first, a second and a third action edge (11a, 11b, 11c), and a drive means for moving the mask (11) relative to a substrate (12) in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120° to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film 13.
摘要翻译： 它包括具有第一，第二和第三作用边缘（11a，11b，11c）的掩模（11）和用于沿着单轴方向（A（A））移动掩模（11）相对于基板（12）的驱动装置 ），由此以固定的移动速度移动掩模以使得边缘连续地作用在相同的基底区域上，同时连续施加不同的材料，连续地形成三个分量的薄膜，各自的膜厚度梯度在三个不同的方向上互相间隔开 以120°的角度使得这些膜重叠，由此形成三元相图薄膜13。
-
公开(公告)号：US20060057240A1
公开(公告)日：2006-03-16
申请号：US10528265
申请日：2003-09-19
IPC分类号： A01J21/00
CPC分类号： C23C14/044
摘要： It comprises a mask (11) having a first, a second and a third action edge (11a, 11b, 11c), and a drive means for moving the mask (11) relative to a substrate (12) in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120° to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film 13.
摘要翻译： 它包括具有第一，第二和第三作用边缘（11a，11b，11c）的掩模（11）和用于以单轴方式相对于基板（12）移动掩模（11）的驱动装置 方向（A），其中以固定的移动速度移动掩模以使得边缘连续地作用在相同的基底区域上，同时连续施加不同的材料，依次形成三个分量的薄膜，相应的膜厚梯度相互取向在三个不同的方向 以120°的角度间隔开，以使这些膜重叠，从而形成三元相图薄膜13。
-
公开(公告)号：US07507290B2
公开(公告)日：2009-03-24
申请号：US10593897
申请日：2005-03-22
申请人： Hideomi Koinuma , Yuji Matsumoto , Ryota Takahashi
发明人： Hideomi Koinuma , Yuji Matsumoto , Ryota Takahashi
IPC分类号： C30B1/10
CPC分类号： C30B9/08 , C30B3/00 , C30B19/02 , C30B29/22 , C30B29/30 , C30B29/32 , H01L21/3147 , H01L21/31691
摘要： A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.
摘要翻译： 可以提供能够使具有与本体晶体相当的结晶完整性的薄膜并且以降低的成本制成的助熔剂固相外延，其中外延生长的目标物质的混合物的非晶膜和 在物质的共晶点以下的温度下，在基板上沉积与目标物质共生而不产生任何化合物的物质，并且在不低于该物质的共晶点的温度下对基材进行热处理 客观和通量物质。 固相反应，即固相扩散，使目标物质和助熔剂物质混合在一起形成其共晶状态的液相，目标物质从该物质析出并外延生长在基底上。
-
公开(公告)号：US20070209571A1
公开(公告)日：2007-09-13
申请号：US10593897
申请日：2005-03-22
申请人： Hideomi Koinuma , Yuji Matsumoto , Ryota Takahashi
发明人： Hideomi Koinuma , Yuji Matsumoto , Ryota Takahashi
IPC分类号： C30B19/02
CPC分类号： C30B9/08 , C30B3/00 , C30B19/02 , C30B29/22 , C30B29/30 , C30B29/32 , H01L21/3147 , H01L21/31691
摘要： A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.
摘要翻译： 可以提供能够使具有与本体晶体相当的结晶完整性的薄膜并且以降低的成本制成的助熔剂固相外延，其中外延生长的目标物质的混合物的非晶膜和 在物质的共晶点以下的温度下，在基板上沉积与目标物质共生而不产生任何化合物的物质，并且在不低于该物质的共晶点的温度下对基材进行热处理 客观和通量物质。 固相反应，即固相扩散，使目标物质和助熔剂物质混合在一起形成其共晶状态的液相，目标物质从该物质析出并外延生长在基底上。
-
6.发明授权Layered Bi compound nanoplate array of such nanoplates, their making methods and devices using them 失效这种纳米板的层状Bi复合纳米板阵列，其制造方法和装置使用它们公开(公告)号：US07911927B2
公开(公告)日：2011-03-22
申请号：US11659428
申请日：2005-08-01
申请人： Hideomi Koinuma , Yuji Matsumoto , Ryota Takahashi
发明人： Hideomi Koinuma , Yuji Matsumoto , Ryota Takahashi
IPC分类号： G11B7/00
CPC分类号： C30B29/605 , B01J23/002 , B01J23/18 , B01J35/004 , B01J37/0244 , B01J2523/00 , B82Y10/00 , B82Y30/00 , C23C14/024 , C23C14/088 , C23C14/28 , C30B25/02 , C30B29/22 , Y10T428/24942 , B01J2523/47 , B01J2523/54
摘要： A Bi4Ti3O12 nanoplate, an array of such Bi4Ti3O12 nanoplate and their making methods as well as their applications are provided. Using a vapor phase growth method, a flux layer of VOx is deposited on a SrTiO3 (001) faced substrate and then Bi4Ti3O12 is deposited on the flux layer. A Bi4Ti3O12 single crystal nanoplate is formed standing up on the flux layer in the form of a rectangular solid whose independent three sides are crystallographically oriented in directions coincident with particular crystallographic directions of the single crystal substrate, respectively. The nanoplates as a nanostructure grown by the bottom-up method are substantially fixed in shape and are densely arrayed not in contact with one another, and are applicable to a low-cost ferroelectric memory and the like.
摘要翻译： 提供Bi4Ti3O12纳米板，这种Bi4Ti3O12纳米板的阵列及其制备方法及其应用。 使用气相生长法，将VO x的焊剂层沉积在SrTiO 3（001）面对衬底上，然后将Bi4Ti3O12沉积在焊剂层上。 分别以独立的三面在与单晶衬底的特定结晶方向一致的方向上取向的矩形固体形式的助熔剂层上形成Bi4Ti3O12单晶纳米板。 作为通过自下而上方法生长的纳米结构的纳米板基本上固定在形状上并且密集地排列成彼此不接触，并且可应用于低成本的铁电存储器等。
-
7.发明申请Layered bi compound nanoplate array of such nanoplates, their making methods and devices using them 失效这种纳米板的层状双组分纳米板阵列，其制备方法和使用它们的装置公开(公告)号：US20090213636A1
公开(公告)日：2009-08-27
申请号：US11659428
申请日：2005-08-01
申请人： Hideomi Koinuma , Yuji Matsumoto , Ryota Takahashi
发明人： Hideomi Koinuma , Yuji Matsumoto , Ryota Takahashi
CPC分类号： C30B29/605 , B01J23/002 , B01J23/18 , B01J35/004 , B01J37/0244 , B01J2523/00 , B82Y10/00 , B82Y30/00 , C23C14/024 , C23C14/088 , C23C14/28 , C30B25/02 , C30B29/22 , Y10T428/24942 , B01J2523/47 , B01J2523/54
摘要： A Bi4Ti3O12 nanoplate, an array of such Bi4Ti3O12 nanoplate and their making methods as well as their applications are provided. Using a vapor phase growth method, a flux layer of VOx is deposited on a SrTiO3 (001) faced substrate and then Bi4Ti3O12 is deposited on the flux layer. A Bi4Ti3O12 single crystal nanoplate is formed standing up on the flux layer in the form of a rectangular solid whose independent three sides are crystallographically oriented in directions coincident with particular crystallographic directions of the single crystal substrate, respectively. The nanoplates as a nanostructure grown by the bottom-up method are substantially fixed in shape and are densely arrayed not in contact with one another, and are applicable to a low-cost ferroelectric memory and the like.
摘要翻译： 提供Bi4Ti3O12纳米板，这种Bi4Ti3O12纳米板的阵列及其制备方法及其应用。 使用气相生长法，将VO x的焊剂层沉积在SrTiO 3（001）面对衬底上，然后将Bi4Ti3O12沉积在焊剂层上。 分别以独立的三面在与单晶衬底的特定结晶方向一致的方向上取向的矩形固体形式的助熔剂层上形成Bi4Ti3O12单晶纳米板。 作为通过自下而上方法生长的纳米结构的纳米板基本上固定在形状上并且密集地排列成彼此不接触，并且可应用于低成本的铁电存储器等。
-
8.发明授权Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element 失效含有铋作为构成元素的多元素氧化物单晶的单晶的制造方法公开(公告)号：US07442252B2
公开(公告)日：2008-10-28
申请号：US10557044
申请日：2004-05-21
申请人： Hideomi Koinuma , Yuji Matsumoto , Ryota Takahashi
发明人： Hideomi Koinuma , Yuji Matsumoto , Ryota Takahashi
CPC分类号： C30B23/025 , C30B9/04 , C30B25/183 , C30B29/30 , C30B29/32
摘要： The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is represented by the formula (Bi2O2)Am−1BmO3m+1, wherein A is Sr, Ba, Ca, or Bi and B is Ti, Ta, or Nb.A flux layer, containing a composition satisfying the inequality 0
摘要翻译： 本发明提供了制备含有Bi的多元素氧化物单晶的方法，该Bi具有独立于制备方法的高结晶度，并且由式（Π2 O 2） 其中A是Sr，Ba，Ca或Bi和B，其中A是Sr，Ba，Ca或Bi和B 是Ti，Ta或Nb。 包含满足不等式0的组成的通量层，和/或0 <= TIO / BI2 晶片上方形成单晶薄膜。
-
9.发明申请Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element 失效含有铋作为构成元素的多元素氧化物单晶的单晶的制造方法公开(公告)号：US20060288925A1
公开(公告)日：2006-12-28
申请号：US10557044
申请日：2004-05-21
申请人： Hideomi Koinuma , Yuji Matsumoto , Ryota Takahashi
发明人： Hideomi Koinuma , Yuji Matsumoto , Ryota Takahashi
IPC分类号： H01L21/322
CPC分类号： C30B23/025 , C30B9/04 , C30B25/183 , C30B29/30 , C30B29/32
摘要： The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is represented by the formula (Bi2O2)Am-1BmO3m+1, wherein A is Sr, Ba, Ca, or Bi and B is Ti, Ta, or Nb. A flux layer, containing a composition satisfying the inequality 0
摘要翻译： 本发明提供了制备含有Bi的多元素氧化物单晶的方法，该Bi具有独立于制备方法的高结晶度，并且由式（Π2 O 2） 其中A是Sr，Ba，Ca或Bi和B，其中A是Sr，Ba，Ca或Bi和B 是Ti，Ta或Nb。 包含满足不等式0的组成的通量层，和/或0 <= TIO / BI2 晶片上方形成单晶薄膜。
-
10.发明申请公开(公告)号：US20100288144A1
公开(公告)日：2010-11-18
申请号：US12663758
申请日：2008-06-11
申请人： Yasuharu Suda , Mitsuru Tabuchi , Fumiko Omae , Koji Nishiyama , Ryota Takahashi , Yoshiaki Ueno
发明人： Yasuharu Suda , Mitsuru Tabuchi , Fumiko Omae , Koji Nishiyama , Ryota Takahashi , Yoshiaki Ueno
IPC分类号： B41F7/02
CPC分类号： B41M5/52 , B41F23/02 , B41M1/06 , B41M5/0011 , B41M5/5218 , B41M2205/12 , D21H19/38
摘要： The invention relates to a printing method by an offset printing press and an offset printing press by which a substrate process is carried out for low-whiteness printing paper such as paper for newspaper with aqueous substrate treatment agent so that the print quality can be improved. In the invention, in order to suppress occurrence of a curl of printing paper, substrate treatment agent containing solid fine particles and a binder component is supplied to a printing face of printing paper, and the substrate treatment agent is dried to form a porous layer having a great number of holes having a smaller diameter than that of pigment contained in printing ink from the solid fine particles and the binder resin. Then, offset printing is carried out on the printing paper.
摘要翻译： 本发明涉及一种通过胶版印刷机和胶版印刷机的印刷方法，通过该印刷机，用水性基材处理剂进行低白度印刷纸用于报纸的低白度打印纸，从而可以提高打印质量。 在本发明中，为了抑制印刷纸卷曲的发生，将含有固体微粒和粘合剂成分的基板处理剂供给到印刷纸的印刷面上，干燥基板处理剂，形成具有 具有比固体微粒和粘结剂树脂在印刷油墨中所含的颜料的直径小的孔的大量孔。 然后，在打印纸上进行胶版印刷。
-
-
-
-
-
-
-
-
-
搜索结果
13 条记录 (耗时 0.024 秒)
