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公开(公告)号：US20100236482A1
公开(公告)日：2010-09-23
申请号：US12681090
申请日：2008-10-14
IPC分类号： C23C16/34
CPC分类号： H01L21/68735 , C23C16/4585 , C23C16/50 , H01L21/0217 , H01L21/02274 , H01L21/318 , H01L21/3185
摘要： An object is to provide a plasma film forming apparatus capable of reducing particles even in the case in which a film is formed by applying a bias to a substrate. In the plasma film forming apparatus in which a bias is applied to a substrate (5) placed on a supporting table (4) in a chamber and forming a thin film on the substrate (5) by using plasma, the supporting table (4) has a columnar supporting table main body (4b) having a contact surface in contact with the substrate (5), the contact surface (4a) having an outer diameter (c) smaller than an outer diameter (W) of the substrate (5); and a flange portion (4c) extended in an outer circumferential direction from a side surface (4d) of the supporting table main body (4b); wherein a predetermined first gap (G1) is formed between the flange portion (4c) and a rear surface of the outer circumference of the substrate (5).
摘要翻译： 目的是提供即使在通过向基板施加偏压而形成膜的情况下也能够还原粒子的等离子体成膜装置。 在等离子体成膜装置中，其中偏置被施加到放置在腔室中的支撑台（4）上的衬底（5）上并且通过使用等离子体在衬底（5）上形成薄膜，支撑台（4） 具有与基板（5）接触的接触面的柱状支撑台主体（4b），所述接触面（4a）的外径（c）小于所述基板（5）的外径（W） ; 以及从所述支撑台主体（4b）的侧面（4d）向外周方向延伸的凸缘部（4c）。 其特征在于，在所述凸缘部（4c）与所述基板（5）的外周的后表面之间形成规定的第一间隙（G1）。
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公开(公告)号：US08889568B2
公开(公告)日：2014-11-18
申请号：US13638213
申请日：2011-05-18
IPC分类号： H01L21/31 , H01L21/469 , C23C16/505 , H01L21/67 , C23C16/34 , H01J37/32 , H01L21/02
CPC分类号： H01L21/02521 , C23C16/345 , C23C16/505 , H01J37/32449 , H01J37/32706 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/67017
摘要： Disclosed are: a method for producing a silicon nitride film, wherein generation of blisters at the periphery of a substrate is suppressed when a silicon nitride film is formed through application of a bias power; and an apparatus for producing a silicon nitride film. Specifically disclosed are a method and apparatus for producing a silicon nitride film, wherein a silicon nitride film used for a semiconductor element is formed on a substrate by plasma processing. In the method and apparatus for producing a silicon nitride film, a bias is applied to the substrate at time (b1), and a starting material gas SiH4 for the silicon nitride film is started to be supplied at time (b3) after the application of the bias.
摘要翻译： 本发明公开了一种氮化硅膜的制造方法，其中通过施加偏压功率来形成氮化硅膜时抑制了在衬底周边发生气泡; 以及氮化硅膜的制造装置。 具体公开了用于制造氮化硅膜的方法和装置，其中通过等离子体处理在衬底上形成用于半导体元件的氮化硅膜。 在制造氮化硅膜的方法和装置中，在时间（b1）对衬底施加偏压，并且在施加了时间（b3）之后开始供应氮化硅膜的原料气体SiH4 偏见。
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公开(公告)号：US20100310791A1
公开(公告)日：2010-12-09
申请号：US12812653
申请日：2009-01-20
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/505 , H01J37/321 , H01J37/32706 , H01L21/02274 , H01L21/3185
摘要： In order to provide a plasma processing method and a plasma processing system which is capable of embedding a SiN film can be performed by applying bias power, in a plasma processing method for depositing a silicon nitride film on a substrate 21, which is a target for plasma processing, by using plasma of a raw material gas containing silicon and hydrogen and of a gas containing nitrogen, the bias power to inject ions into the substrate 21 is set equal to or higher than a threshold to increase a Si—H bonding amount, thereby reducing compression stress.
摘要翻译： 为了提供等离子体处理方法和能够嵌入SiN膜的等离子体处理系统，可以通过施加偏压功率来进行，在等离子体处理方法中，用于在作为目标的基板21上沉积氮化硅膜的等离子体处理方法 等离子体处理，通过使用含有硅和氢的原料气体和含氮气体的等离子体，将离子注入基板21的偏压功率设定为等于或高于阈值以增加Si-H键合量， 从而降低压缩应力。
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公开(公告)号：US20130109154A1
公开(公告)日：2013-05-02
申请号：US13638213
申请日：2011-05-18
CPC分类号： H01L21/02521 , C23C16/345 , C23C16/505 , H01J37/32449 , H01J37/32706 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/67017
摘要： Disclosed are: a method for producing a silicon nitride film, wherein generation of blisters at the periphery of a substrate is suppressed when a silicon nitride film is formed through application of a bias power; and an apparatus for producing a silicon nitride film. Specifically disclosed are a method and apparatus for producing a silicon nitride film, wherein a silicon nitride film used for a semiconductor element is formed on a substrate by plasma processing. In the method and apparatus for producing a silicon nitride film, a bias is applied to the substrate at time (b1), and a starting material gas SiH4 for the silicon nitride film is started to be supplied at time (b3) after the application of the bias.
摘要翻译： 本发明公开了一种氮化硅膜的制造方法，其中通过施加偏压功率来形成氮化硅膜时抑制了在衬底周边发生气泡; 以及氮化硅膜的制造装置。 具体公开了用于制造氮化硅膜的方法和装置，其中通过等离子体处理在衬底上形成用于半导体元件的氮化硅膜。 在制造氮化硅膜的方法和装置中，在时间（b1）对衬底施加偏压，并且在施加了时间（b3）之后开始供应氮化硅膜的原料气体SiH4 偏见。
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5.发明申请INSULATING FILM FOR SEMICONDUCTOR DEVICE, PROCESS AND APPARATUS FOR PRODUCING INSULATING FILM FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING THE SEMICONDUCTOR DEVICE 有权用于半导体器件的绝缘膜，用于制造用于半导体器件的绝缘膜的方法和装置，半导体器件以及用于制造半导体器件的工艺公开(公告)号：US20110266660A1
公开(公告)日：2011-11-03
申请号：US13001256
申请日：2009-06-25
申请人： Hidetaka Kafuku , Toshihito Fujiwara , Toshihiko Nishimori , Tadashi Shimazu , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Takuya Kamiyama , Tetsuya Yamamoto , Shinya Shibata
发明人： Hidetaka Kafuku , Toshihito Fujiwara , Toshihiko Nishimori , Tadashi Shimazu , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Takuya Kamiyama , Tetsuya Yamamoto , Shinya Shibata
IPC分类号： H01L21/31 , C23C16/52 , C23C16/50 , H01L21/768 , H01L23/28
CPC分类号： H01L21/318 , C23C16/342 , C23C16/507 , H01L21/02112 , H01L21/02274 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device. A gas containing a raw material gas which gasified a predetermined alkylborazine compound is supplied in a chamber (2); an electromagnetic wave is introduced into the chamber (2) using with an inductive coupling type plasma generation mechanism (4, 5, 6) to convert the gas into a plasma; a substrate (8) is placed in a plasma diffusion region of the plasma; gas-phase polymerization is performed with borazine skeletal molecules, as a fundamental unit, dissociated from the alkylborazine compound by the plasma so as to form the insulating film for semiconductor devices on the substrate (8).
摘要翻译： 本发明的目的是提供具有低介电常数，低漏电流和高机械强度特性的半导体器件用绝缘膜，随着时间的推移，这些特性的变化变小，具有优异的耐水性， 以及提供用于制造用于半导体器件的绝缘膜，半导体器件和用于制造半导体器件的工艺的工艺和设备。 在室（2）内供给含有气化了规定的烷基
硼氮化合物的原料气体的气体。 使用电感耦合型等离子体产生机构（4,5,6）将电磁波引入腔室（2），以将气体转换成等离子体; 将衬底（8）放置在等离子体的等离子体扩散区域中; 用作为基本单元的环硼烷骨架分子进行气相聚合，通过等离子体与烷基硼氮化合物离解，从而在基板（8）上形成用于半导体器件的绝缘膜。-
公开(公告)号：US20120002345A1
公开(公告)日：2012-01-05
申请号：US13202688
申请日：2009-09-15
IPC分类号： H01L21/683
CPC分类号： C23C16/4586 , C23C16/4581 , C23C16/46 , H01J37/32724 , H01L21/6831
摘要： A substrate support stage of a plasma processing device, which stably controls a substrate at a relatively high temperature. The substrate support stage includes an electrostatic attraction plate (14) containing a first electrode for holding a substrate (W) by electrostatic attraction, a second electrode for applying a bias to the substrate (W), and a heater for heating the substrate, a cylindrical flange (13) welded to the lower surface of the electrostatic attraction plate (14) and produced from an alloy having the same heat characteristic as the electrostatic attraction plate (14), and a support stage (10) including an O-ring (12) in a surface facing the lower surface of the flange (13), to which the flange (13) is attached via the O-ring (12), wherein when the bias power to be applied to the substrate (W) is changed, the heater power for heating the substrate (W); is changed so that the temperature of the substrate (W) is constant.
摘要翻译： 等离子体处理装置的基板支撑台，其在较高温度下稳定地控制基板。 基板支撑台包括静电吸引板（14），其包含用于通过静电吸引保持基板（W）的第一电极，用于向基板（W）施加偏压的第二电极，以及用于加热基板的加热器 焊接到静电吸引板（14）的下表面并由具有与静电吸引板（14）相同的热特性的合金制成的圆柱形凸缘（13）以及包括O形环（10）的支撑台（10） 12）在面对法兰（13）的下表面的表面中，凸缘（13）经由O形环（12）附接到该表面上，其中当要施加到基底（W）的偏压功率被改变时 用于加热衬底（W）的加热器功率; 改变为使得基板（W）的温度恒定。
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7.发明授权Insulating film for semiconductor device, process and apparatus for producing insulating film for semiconductor device, semiconductor device, and process for producing the semiconductor device 有权半导体装置用绝缘膜，半导体装置用绝缘膜的制造方法及装置，半导体装置及半导体装置的制造方法公开(公告)号：US08288294B2
公开(公告)日：2012-10-16
申请号：US13001256
申请日：2009-06-25
申请人： Hidetaka Kafuku , Toshihito Fujiwara , Toshihiko Nishimori , Tadashi Shimazu , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Takuya Kamiyama , Tetsuya Yamamoto , Shinya Shibata
发明人： Hidetaka Kafuku , Toshihito Fujiwara , Toshihiko Nishimori , Tadashi Shimazu , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Takuya Kamiyama , Tetsuya Yamamoto , Shinya Shibata
IPC分类号： H01L21/31
CPC分类号： H01L21/318 , C23C16/342 , C23C16/507 , H01L21/02112 , H01L21/02274 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device. A gas containing a raw material gas which gasified a predetermined alkylborazine compound is supplied in a chamber (2); an electromagnetic wave is introduced into the chamber (2) using with an inductive coupling type plasma generation mechanism (4, 5, 6) to convert the gas into a plasma; a substrate (8) is placed in a plasma diffusion region of the plasma; gas-phase polymerization is performed with borazine skeletal molecules, as a fundamental unit, dissociated from the alkylborazine compound by the plasma so as to form the insulating film for semiconductor devices on the substrate (8).
摘要翻译： 本发明的目的是提供具有低介电常数，低漏电流和高机械强度特性的半导体器件用绝缘膜，随着时间的推移，这些特性的变化变小，具有优异的耐水性， 以及提供用于制造用于半导体器件的绝缘膜，半导体器件和用于制造半导体器件的工艺的工艺和设备。 在室（2）内供给含有气化了规定的烷基
硼氮化合物的原料气体的气体。 使用电感耦合型等离子体产生机构（4,5,6）将电磁波引入腔室（2），以将气体转换成等离子体; 将衬底（8）放置在等离子体的等离子体扩散区域中; 用作为基本单元的环硼烷骨架分子进行气相聚合，通过等离子体与烷基硼氮化合物离解，从而在基板（8）上形成用于半导体器件的绝缘膜。-
8.发明申请SILICON NITRIDE FILM FOR SEMICONDUCTOR ELEMENT, AND METHOD AND APPARATUS FOR MANUFACTURING SILICON NITRIDE FILM 审中-公开半导体元件用氮化硅薄膜及其制造方法及装置氮化硅薄膜公开(公告)号：US20130071671A1
公开(公告)日：2013-03-21
申请号：US13638200
申请日：2011-05-11
申请人： Seiji Nishikawa , Hidetaka Kafuku
发明人： Seiji Nishikawa , Hidetaka Kafuku
CPC分类号： B32B9/04 , C23C16/345 , H01L21/0217 , H01L21/022 , H01L21/02274
摘要： Disclosed is a silicon nitride film for a semiconductor element, wherein changes of film stress of the silicon nitride film are suppressed, said silicon nitride film being formed by applying bias power. Also disclosed are a method and an apparatus for manufacturing the silicon nitride film. The silicon nitride film, which is formed on a substrate (19) by plasma processing, and which is to be used in the semiconductor element, has a structure wherein a biased SiN film (31) formed by applying bias to the substrate (19) is sandwiched between an unbiased SiN film (32a) and an unbiased SiN film (32b), which are formed by not applying bias to the substrate (19).
摘要翻译： 公开了一种用于半导体元件的氮化硅膜，其中氮化硅膜的膜应力的变化被抑制，所述氮化硅膜通过施加偏置功率而形成。 还公开了一种用于制造氮化硅膜的方法和装置。 通过等离子体处理形成在衬底（19）上并用于半导体元件中的氮化硅膜具有这样的结构，其中通过向衬底（19）施加偏压而形成的偏置SiN膜（31） 被夹在通过不向衬底（19）施加偏压而形成的无偏压SiN膜（32a）和无偏压SiN膜（32b）之间。
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9.发明申请公开(公告)号：US20130049063A1
公开(公告)日：2013-02-28
申请号：US13582225
申请日：2011-02-10
CPC分类号： H01L33/44 , H01L2224/48463 , H01L2224/49107 , H01L2933/0025 , Y10T428/2495 , Y10T428/24975
摘要： Disclosed are: a semiconductor light-emitting element which fulfills all of high migration preventing properties, high permeability and low film production cost; a protective film for a semiconductor light-emitting element; and a process for producing the protective film. In a semiconductor light-emitting element comprising multiple semiconductor layers (12-14) formed on a substrate (11) and electrode portions (15, 16) and electrode portions (17, 18) which act as electrodes for the multiple semiconductor layers (12-14), an SiN film (31) having a thickness of 35 nm or more and comprising silicon nitride covers the surrounds of the multiple semiconductor layers (12-14), the electrode portions (15, 16) and the electrode portions (17, 18) and an SiO film (32) having a higher thickness than that of the SiN film (31) and comprising silicon oxide covers the surround of the SiN film (31), as protective films for the semiconductor light-emitting element.
摘要翻译： 公开了一种半导体发光元件，其具有高迁移防止性，高透过性和低成膜成本; 用于半导体发光元件的保护膜; 以及保护膜的制造方法。 在包括形成在基板（11）上的多个半导体层（12-14）和用作多个半导体层（12）的电极的电极部分（15,16）和电极部分（17,18）的半导体发光元件中， -14），厚度为35nm以上并且包含氮化硅的SiN膜（31）覆盖多个半导体层（12-14）的周围，电极部分（15,16）和电极部分（17） 18）和比SiN膜（31）的厚度高且包含氧化硅的SiO膜覆盖SiN膜（31）的周围的SiO膜（32）作为半导体发光元件的保护膜。
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10.发明申请SEMICONDUCTOR LIGHT-EMITTING ELEMENT, PROTECTIVE FILM OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR FABRICATING SAME 审中-公开半导体发光元件，半导体发光元件的保护膜及其制造方法公开(公告)号：US20130037850A1
公开(公告)日：2013-02-14
申请号：US13582192
申请日：2011-02-10
IPC分类号： H01L33/52
CPC分类号： H01L33/44 , H01L2224/02166 , H01L2224/48463 , H01L2224/49107 , H01L2933/0025
摘要： Disclosed are: a semiconductor light-emitting element that fulfills all of having high migration prevention, high transmittance, and low film-production cost; the protective film of the semiconductor light-emitting element; and a method for fabricating same. To this end, in the semiconductor light-emitting element-which has: a plurality of semiconductor layers (12-14) formed on a substrate (11); and electrode sections (15, 16) and other electrode sections (17, 18) that are the electrodes of the plurality of semiconductor layers (12-14)—as the protective film thereof, the surroundings of the plurality of semiconductor layers (12-14), the electrode sections (15, 16), and the other electrode sections (17, 18) are covered by a SiN film (21) comprising silicon nitride of which the quantity of Si—H bonds in the film is less than 1.0×1021 bonds/cm3.
摘要翻译： 公开了一种半导体发光元件，其满足所有具有高迁移预防，高透射率和低成膜成本; 半导体发光元件的保护膜; 及其制造方法。 为此，在具有形成在基板（11）上的多个半导体层（12-14）的半导体发光元件中， 以及作为多个半导体层（12-14）的电极的电极部（15,16）和其他电极部（17,18），在其保护膜上，多个半导体层（12〜 如图14所示，电极部分（15,16）和其它电极部分（17,18）被包括氮化硅的SiN膜（21）覆盖，其中膜中Si-H键的量小于1.0 ×1021份/ cm3。
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