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公开(公告)号：US20090091856A1
公开(公告)日：2009-04-09
申请号：US12241536
申请日：2008-09-30
申请人： Hidetoshi Honda , Seiichi Onodera , Naoki Ikeda , Takanori Sato , Kazunari Motohashi , Daizo Shiga
发明人： Hidetoshi Honda , Seiichi Onodera , Naoki Ikeda , Takanori Sato , Kazunari Motohashi , Daizo Shiga
CPC分类号： G11B5/70 , G11B5/00826 , Y10T428/11
摘要： A magnetic recording medium includes a tape-shaped nonmagnetic support, and a vertical magnetic layer formed on a main surface of the nonmagnetic support by a vacuum thin-film forming technique, signals being recorded on and reproduced from the vertical magnetic layer in a linear system. In the magnetic recording medium, the dipulse ratio of the vertical recording layer is 0.36 or more.
摘要翻译： 磁记录介质包括带状非磁性载体和通过真空薄膜形成技术形成在非磁性载体的主表面上的垂直磁性层，在线性系统中记录和再现垂直磁性层的信号 。 在磁记录介质中，垂直记录层的二次脉冲比为0.36以上。
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公开(公告)号：US08208217B2
公开(公告)日：2012-06-26
申请号：US12241536
申请日：2008-09-30
申请人： Hidetoshi Honda , Seiichi Onodera , Naoki Ikeda , Takanori Sato , Kazunari Motohashi , Daizo Shiga
发明人： Hidetoshi Honda , Seiichi Onodera , Naoki Ikeda , Takanori Sato , Kazunari Motohashi , Daizo Shiga
IPC分类号： G11B5/008
CPC分类号： G11B5/70 , G11B5/00826 , Y10T428/11
摘要： A magnetic recording medium includes a tape-shaped nonmagnetic support, and a vertical magnetic layer formed on a main surface of the nonmagnetic support by a vacuum thin-film forming technique, signals being recorded on and reproduced from the vertical magnetic layer in a linear system. In the magnetic recording medium, the dipulse ratio of the vertical recording layer is 0.36 or more.
摘要翻译： 磁记录介质包括带状非磁性载体和通过真空薄膜形成技术形成在非磁性载体的主表面上的垂直磁性层，在直线系统中记录和再现垂直磁性层的信号 。 在磁记录介质中，垂直记录层的二次脉冲比为0.36以上。
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3.发明申请公开(公告)号：US20050048326A1
公开(公告)日：2005-03-03
申请号：US10928294
申请日：2004-08-27
申请人： Tetsuo Samoto , Takanori Sato , Kazunari Motohashi
发明人： Tetsuo Samoto , Takanori Sato , Kazunari Motohashi
摘要： A lower magnetic layer magnetized and formed in a first direction and an upper magnetic layer magnetized and formed in a second direction opposite to the lower magnetic layer are laminated on a base. A ratio T1/T2 of a thickness T1 of the upper magnetic layer to a thickness T2 of the lower magnetic layer is located within a range of 0.6 to 0.9. Thus, in a herringbone type dual evaporated tape in which data is recorded and reproduced in a serpentine fashion, a vertical magnetization component is canceled to reduce the difference in the waveform distortion of a reproducing signal between a forward direction and a reverse direction.
摘要翻译： 在第一方向上磁化形成的下磁性层和在与下磁性层相反的第二方向上磁化形成的上磁性层层压在基底上。 上部磁性层的厚度T1与下部磁性层的厚度T2的比T1 / T2位于0.6〜0.9的范围内。 因此，在以蛇形方式记录和再现数据的人字形双蒸发磁带中，消除垂直磁化分量以减小正向和反向之间的再现信号的波形失真的差异。
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4.发明授权公开(公告)号：US07297421B2
公开(公告)日：2007-11-20
申请号：US10928294
申请日：2004-08-27
申请人： Tetsuo Samoto , Takanori Sato , Kazunari Motohashi
发明人： Tetsuo Samoto , Takanori Sato , Kazunari Motohashi
摘要： A lower magnetic layer magnetized and formed in a first direction and an upper magnetic layer magnetized and formed in a second direction opposite to the lower magnetic layer are laminated on a base. A ratio T1/T2 of a thickness T1 of the upper magnetic layer to a thickness T2 of the lower magnetic layer is located within a range of 0.6 to 0.9. Thus, in a herringbone type dual evaporated tape in which data is recorded and reproduced in a serpentine fashion, a vertical magnetization component is canceled to reduce the difference in the waveform distortion of a reproducing signal between a forward direction and a reverse direction.
摘要翻译： 在第一方向上磁化形成的下磁性层和在与下磁性层相反的第二方向上磁化形成的上磁性层层压在基底上。 上部磁性层的厚度T 1的比例T 1 / T 2 <2> 至厚度T 2 的下磁性层位于0.6〜0.9的范围内。 因此，在以蛇形方式记录和再现数据的人字形双蒸发磁带中，消除垂直磁化分量以减小正向和反向之间的再现信号的波形失真的差异。
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5.发明授权Semiconductor device manufacturing method and computer-readable storage medium 有权半导体器件制造方法和计算机可读存储介质公开(公告)号：US08735299B2
公开(公告)日：2014-05-27
申请号：US13410512
申请日：2012-03-02
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32669 , H01L21/0206 , H01L21/0273 , H01L21/31138 , H01L21/31144 , H01L21/32137 , H01L21/32139 , H01L27/11556 , H01L27/11582
摘要： There is provided a semiconductor device manufacturing method for forming a step-shaped structure in a substrate by etching the substrate having thereon a multilayer film and a photoresist film on the multilayer film and serving as an etching mask. The multilayer film is formed by alternately layering a first film having a first permittivity and a second film having a second permittivity different from the first permittivity. The method includes a first process for plasma-etching the first film by using the photoresist film as a mask; a second process for exposing the photoresist film to hydrogen-containing plasma; a third process for trimming the photoresist film; and a fourth process for etching the second film by using the trimmed photoresist film and the plasma-etched first film as a mask. The step-shaped structure is formed in the multilayer film by repeatedly performing the first process to the fourth process in this sequence.
摘要翻译： 提供了一种半导体器件制造方法，用于通过在多层膜上蚀刻其上具有多层膜的基板和光致抗蚀剂膜并用作蚀刻掩模，在基板中形成阶梯形结构。 通过交替层叠具有第一介电常数的第一膜和具有不同于第一介电常数的第二介电常数的第二膜形成多层膜。 该方法包括通过使用光致抗蚀剂膜作为掩模来等离子体蚀刻第一膜的第一工艺; 用于将光致抗蚀剂膜暴露于含氢等离子体的第二种方法; 用于修整光致抗蚀剂膜的第三工艺; 以及通过使用修整的光致抗蚀剂膜和等离子体蚀刻的第一膜作为掩模来蚀刻第二膜的第四工艺。 通过以该顺序反复进行第四工序的第一工序，在多层膜中形成阶梯状结构。
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6.发明授权公开(公告)号：US08625072B2
公开(公告)日：2014-01-07
申请号：US13099686
申请日：2011-05-03
申请人： Takanori Sato
发明人： Takanori Sato
CPC分类号： G03F7/70775 , G03B27/42 , G03B27/53 , G03B27/58 , G03F9/7034 , G03F9/7096
摘要： A scanning exposure apparatus measures levels of a substrate at a predetermined position on the substrate at a first measurement point during the acceleration period and a second measurement point during the constant velocity period, obtains a correction value for a measurement error due to factors associated with acceleration based on the measurement results, corrects the measured level using the obtained correction value and exposes the substrate so that the level at a given position on the substrate becomes equal to the corrected level, when the substrate is exposed at the given position after the level is measured while the stage accelerates, and exposes the substrate so that the level at a given position on the substrate becomes equal to the measured level measured, when the substrate is exposed after the level of the substrate at the given position is measured while the stage moves at a constant velocity.
摘要翻译： 扫描曝光装置测量在加速期间的第一测量点处的基板上的预定位置处的基板的水平和在恒定速度周期期间的第二测量点，获得由于与加速度相关联的因素引起的测量误差的校正值 基于测量结果，使用所获得的校正值来校正测量水平，并且暴露衬底，使得当衬底在水平面之后在给定位置处暴露时，衬底上的给定位置处的水平等于校正水平 在阶段加速时测量，并且暴露衬底，使得当衬底在给定位置处的衬底的水平被测量之后，当衬底被移动时，衬底被暴露时，衬底上给定位置处的水平变得等于测量的测量水平 以恒定的速度。
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7.发明申请SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND COMPUTER-READABLE STORAGE MEDIUM 有权半导体器件制造方法和计算机可读存储介质公开(公告)号：US20120225561A1
公开(公告)日：2012-09-06
申请号：US13410512
申请日：2012-03-02
IPC分类号： H01L21/3065 , B05C21/00
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32669 , H01L21/0206 , H01L21/0273 , H01L21/31138 , H01L21/31144 , H01L21/32137 , H01L21/32139 , H01L27/11556 , H01L27/11582
摘要： There is provided a semiconductor device manufacturing method for forming a step-shaped structure in a substrate by etching the substrate having thereon a multilayer film and a photoresist film on the multilayer film and serving as an etching mask. The multilayer film is formed by alternately layering a first film having a first permittivity and a second film having a second permittivity different from the first permittivity. The method includes a first process for plasma-etching the first film by using the photoresist film as a mask; a second process for exposing the photoresist film to hydrogen-containing plasma; a third process for trimming the photoresist film; and a fourth process for etching the second film by using the trimmed photoresist film and the plasma-etched first film as a mask. The step-shaped structure is formed in the multilayer film by repeatedly performing the first process to the fourth process in this sequence.
摘要翻译： 提供了一种半导体器件制造方法，用于通过在多层膜上蚀刻其上具有多层膜的基板和光致抗蚀剂膜并用作蚀刻掩模，在基板中形成阶梯形结构。 通过交替层叠具有第一介电常数的第一膜和具有不同于第一介电常数的第二介电常数的第二膜形成多层膜。 该方法包括通过使用光致抗蚀剂膜作为掩模来等离子体蚀刻第一膜的第一工艺; 用于将光致抗蚀剂膜暴露于含氢等离子体的第二种方法; 用于修整光致抗蚀剂膜的第三工艺; 以及通过使用修整的光致抗蚀剂膜和等离子体蚀刻的第一膜作为掩模来蚀刻第二膜的第四工艺。 通过以该顺序反复进行第四工序的第一工序，在多层膜中形成阶梯状结构。
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公开(公告)号：US08135051B2
公开(公告)日：2012-03-13
申请号：US12502390
申请日：2009-07-14
申请人： Takanori Sato , Takafumi Murakami , Yuji Nishikawa
发明人： Takanori Sato , Takafumi Murakami , Yuji Nishikawa
IPC分类号： H01S3/03
摘要： A gas laser oscillator includes a plurality of discharge tube arrays, each discharge tube array including a plurality of electrical discharge tubes, a support mechanism supporting the plurality of discharge tube arrays, and an optical part optically connecting the plurality of discharge tube arrays. The support mechanism includes a discharge tube linking holder and an elastic member. The elastic member joins the discharge tube linking holder to a first support rod arranged at an upper side as seen in a direction of gravity.
摘要翻译： 气体激光振荡器包括多个放电管阵列，每个放电管阵列包括多个放电管，支撑多个放电管阵列的支撑机构和光学连接多个放电管阵列的光学部件。 支撑机构包括放电管连接保持器和弹性构件。 弹性构件将放电管连接保持器连接到在重力方向观察时设置在上侧的第一支撑杆。
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9.发明授权Retardation plate and its manufacturing method, circularly polarizing plate and 1/2 wave plate using same, and a reflective liquid crystal display 失效延迟板及其制造方法，圆偏振板和使用其的1/2波片，以及反射型液晶显示器公开(公告)号：US07738064B2
公开(公告)日：2010-06-15
申请号：US11627722
申请日：2007-01-26
申请人： Masaaki Otoshi , Takanori Sato , Tadashi Ueda , Fumitaka Terai
发明人： Masaaki Otoshi , Takanori Sato , Tadashi Ueda , Fumitaka Terai
IPC分类号： G02F1/1335 , B29D11/00 , B29D7/01 , B29C55/00
CPC分类号： G02B5/3083
摘要： A method is provided for manufacturing a wide band retardation plate which gives uniform phase difference characteristics to incident light over the whole visible wavelength region, and which, as it permits selection of raw materials regardless of whether they have a positive or negative intrinsic double refraction value, allows a wide selection of raw materials. For this purpose, the method comprises a machine direction-stretched film-forming step for transporting and stretching in an identical direction to the transport direction, a Material A of two or more materials having different positive intrinsic double refraction values to form a machine direction-stretched film, a transverse direction-stretched film-forming step for transporting and stretching in a perpendicular direction to the transport direction, a Material B of the aforesaid two or more materials to form a transverse direction-stretched film, and a lamination step for laminating the machine direction-stretched film and the transverse direction-stretched film.
摘要翻译： 提供一种用于制造宽带延迟板的方法，其对整个可见光波长区域的入射光提供均匀的相位差特性，并且由于其允许选择原材料，而不管其是否具有正或负的固有双折射值 ，允许广泛选择原材料。 为此，该方法包括用于沿与输送方向相同的方向输送和拉伸的机器方向拉伸成膜步骤，具有不同的正本征双重折射值的两种或更多种材料的材料A以形成机器方向 - 拉伸膜，横向拉伸膜形成步骤，用于沿与输送方向垂直的方向输送和拉伸;上述两种或更多种材料的材料B以形成横向拉伸膜;层压步骤，用于层压 机器方向拉伸膜和横向拉伸膜。
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公开(公告)号：US20100045798A1
公开(公告)日：2010-02-25
申请号：US12540838
申请日：2009-08-13
申请人： Hiroshi Sugimoto , Takanori Sato
发明人： Hiroshi Sugimoto , Takanori Sato
CPC分类号： H04N5/23212 , H04N5/144 , H04N5/23245 , H04N5/2351
摘要： An electronic camera includes an imaging device. The imaging device has an imaging surface on which an object scene is captured and repeatedly outputs an object scene image. To the object scene, a plurality of evaluation groups are allocated. Moreover, each of the plurality of evaluation groups is formed by a plurality of evaluation areas. A CPU calculates an evaluation coefficient representing a motion of an object in each of the plurality of evaluation areas, based on the object scene image outputted from the imaging device. The CPU also specifies one of more evaluation groups to which an evaluation area corresponding to an evaluation coefficient exceeding a reference value belongs, and compares a pattern of the specified evaluation groups with a plurality of predetermined patterns. An imaging parameter is adjusted based on a comparison result.
摘要翻译： 电子照相机包括成像装置。 成像装置具有拍摄对象场景的成像面，并重复地输出对象场景图像。 对于对象场景，分配多个评估组。 此外，多个评价组中的每一个由多个评估区域形成。 CPU基于从成像装置输出的对象场景图像，计算表示多个评价区域中的每一个中的对象的运动的评价系数。 CPU还指定与超过参考值的评估系数相对应的评估区域属于的评估组中的一个，并且将指定的评估组的模式与多个预定模式进行比较。 基于比较结果调整成像参数。
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