摘要:
A method of manufacturing an electron source having a plurality of surface-conduction electron-emitting devices arranged on a substrate in row and column directions includes the forming of electron emission portions of the plurality of surface-conduction electron-emitting devices. The forming is carried out by supplying current through the plurality of surface-conduction electron-emitting devices upon dividing them into a plurality of groups. An image forming apparatus passes a current through a plurality of electron sources, which are formed on a substrate and arrayed in the form of a matrix, in dependence upon an image signal, and an image is formed by a light emission in response to electrons emitted from the plurality of electron sources.
摘要:
An electron source comprises a plurality of electron-emitting devices and a drive means for driving the devices. The drive means applies a voltage above a threshold level to selected ones of the plurality of electron-emitting devices according to an image signal to cause the selected devices to emit electrons. The drive means also applies a voltage pulse for bringing the plurality of electron-emitting devices into a high resistance state. The voltage pulse for bringing into a high resistance state has a polarity reverse to that of the voltage for causing electron emission and has a voltage rising rate of greater than 10V/sec.
摘要:
In a manufacture method of an electron-emitting device in which an electro-conductive film having an electron-emitting region is provided between electrodes disposed on a substrate, a step of forming the electron-emitting region comprises a step of forming a structural latent image in the electro-conductive film, and a step of developing the structural latent image. An electron source comprising a plurality of electron-emitting devices arrayed on a substrate, and an image-forming apparatus in combination of the electron source and an image-forming member are manufactured by using the electron-emitting devices manufactured by the above method. The position and shape of an electron-emitting region of each electron-emitting device can be controlled so as to achieve uniform device characteristics, resulting less variations in the amount of emitted electrons between the electron-emitting devices and in the brightness of pictures. Also, the need of flowing a great current for formation of the electron-emitting region is eliminated and hence the current capacity of wiring can be reduced.
摘要:
An image-forming apparatus comprising an envelope formed of a plurality of members, an electron source arranged within the envelope and an image forming member for forming images by irradiation of electron beams from the electron source is manufactured by heating the plurality of members to bond them together to produce the envelope in an atmosphere containing at least a gas selected from reducing gases, inert gases and non-reducing and non-oxidizing gases or in a vacuum. The electron source comprises preferably an electron-emitting element having a thin film for electron emission arranged between a pair of electrodes.
摘要:
An electron source comprises a plurality of electron-emitting devices and a drive means for driving the devices. The drive means applies a voltage above a threshold level to selected ones of the plurality of electron-emitting devices according to an image signal to cause the selected devices to emit electrons. The drive means also applies a voltage pulse for bringing the plurality of electron-emitting devices into a high resistance state. The voltage pulse for bringing into a high resistance state has a polarity reverse to that of the voltage for causing electron emission and has a voltage rising rate of greater than 10 V/sec.
摘要:
An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film inclusive of an electron-emitting region arranged between the electrodes. The electric resistance of the electroconductive film is reduced after forming the electron-emitting region in the course of manufacturing the electron-emitting device.
摘要:
An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film inclusive of an electron-emitting region arranged between the electrodes. The electric resistance of the electroconductive film is reduced after forming the electron-emitting region in the course of manufacturing the electron-emitting device.
摘要:
An electron-emitting device comprises a pair of electrodes arranged on a substrate and an electroconductive film connecting said electrodes and having an electron-emitting region formed therein. The electron-emitting region contains a fissure having an even width of less than 50 nm and preferably shows a voltage applicable length of less than 5 nm. An electron source comprising a plurality of such electron-emitting devices is capable of realizing uniform electron beam emission and an image-forming apparatus comprising such an electron source is suitable for high resolution image display.
摘要:
An electron-emitting device comprises a pair of electrodes arranged on a substrate and an electroconductive film connecting said electrodes and having an electron-emitting region formed therein. The electron-emitting region contains a fissure having an even width of less than 50 nm and preferably shows a voltage applicable length of less than 5 nm. An electron source comprising a plurality of such electron-emitting devices is capable of realizing uniform electron beam emission and an image-forming apparatus comprising such an electron source is suitable for high resolution image display.
摘要:
In an electron-emitting device including, between electrodes, an electroconductive film having an electron emitting region, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher melting point than that of a material of the electrdconductive film. Alternatively, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher temperature at which the material develops a vapor pressure of 1.3×10−3 Pa, than that of a material of the electroconductive film. A manufacturing method of an electron-emitting device includes a step of forming a film made primarily of a metal in the electron emitting region of the electroconductive film. The electron-emitting device has stable characteristics and improved efficiency of electron emission. An image-forming apparatus comprising the electron-emitting devices has high luminance and excellent stability in operation.