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    Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile
    1.
    发明授权
    Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile 有权
    用于均匀氮分布的超薄二氧化硅层的氨退火方法

    公开(公告)号：US06632747B2

    公开(公告)日：2003-10-14

    申请号：US09885600

    申请日：2001-06-20

    申请人： Hiroaki Niimi ,  Douglas T. Grider ,  Rajesh Khamankar ,  Sunil Hattangady

    发明人： Hiroaki Niimi ,  Douglas T. Grider ,  Rajesh Khamankar ,  Sunil Hattangady

    IPC分类号： H01L2131

    CPC分类号： H01L21/02332 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/518

    摘要： An embodiment of the present invention is a method of forming an ultra-thin dielectric layer by providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface; exposing the oxygen-containing layer to a nitrogen-containing plasma to create a uniform nitrogen distribution throughout the oxygen-containing layer; and re-oxidizing and annealing the layer to stabilize the nitrogen distribution, heal plasma-induced damage, and reduce interfacial defect density. This annealing step is selected from a group of four re-oxidizing techniques: Consecutive annealing in a mixture of H2 and N2 (preferably less than 20% H2), and then a mixture of O2 and N2 (preferably less than 20% 02); annealing by a spike-like temperature rise (preferably less than 1 s at 1000 to 1150° C.) in nitrogen-comprising atmosphere (preferably N2/O2 or N2O/H2); annealing by rapid thermal heating in ammonia of reduced pressure (preferably at 600 to 1000° C. for 5 to 60 s); annealing in an oxidizer/hydrogen mixture (preferably N2O with 1% H2) for 5 to 60 s at 800 to 1050° C.

    摘要翻译： 本发明的一个实施例是通过提供具有半导体表面的衬底来形成超薄电介质层的方法; 在半导体表面上形成含氧层; 将含氧层暴露于含氮等离子体以在整个含氧层中产生均匀的氮分布; 并重新氧化和退火该层以稳定氮分布，治愈等离子体诱导的损伤并降低界面缺陷密度。该退火步骤选自一组四种再氧化技术：连续 在H 2和N 2（优选小于20％H 2）的混合物中进行退火，然后将O 2和N 2（优选小于20％的O 2）的混合物进行退火;通过尖峰状温度升高（优选小于20％ （优选为N 2 / O 2或N 2 O / H 2）;通过在减压下的氨中快速热加热（优选在600至1000℃下，对于 5至60秒）;在800至1050℃下在氧化剂/氢气混合物（优选N 2 O与1％H 2）中退火5至60秒。

    Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures
    3.
    发明授权
    Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures 有权
    使用氧化剂/氢混合物退火超薄，高质量的栅氧化层的方法

    公开(公告)号：US06780719B2

    公开(公告)日：2004-08-24

    申请号：US09885744

    申请日：2001-06-20

    申请人： Hiroaki Niimi ,  Rajesh Khamankar ,  James J. Chambers ,  Sunil Hattangady ,  Antonio L. P. Rotondaro

    发明人： Hiroaki Niimi ,  Rajesh Khamankar ,  James J. Chambers ,  Sunil Hattangady ,  Antonio L. P. Rotondaro

    IPC分类号： H01L21336

    CPC分类号： H01L21/02332 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/518

    摘要： An embodiment of the present invention is a method of forming an ultra-thin dielectric layer, the method comprising the steps of: providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface; exposing the oxygen-containing layer to a nitrogen-containing plasma to create a uniform nitrogen distribution throughout the oxygen-containing layer; and re-oxidizing and annealing the layer to stabilize the nitrogen distribution, heal plasma-induced damage, and reduce interfacial defect density. This annealing step is selected from a group of four re-oxidizing techniques: Consecutive annealing in a mixture of H2 and N2 (preferably less than 20% H2), and then a mixture of O2 and N2 (preferably less than 20% O2); annealing by a spike-like temperature rise (preferably less than 1 s at 1000 to 1150° C.) in nitrogen-comprising atmosphere (preferably N2/O2 or N2O/H2); annealing by rapid thermal heating in ammonia of reduced pressure (preferably at 600 to 1000° C. for 5 to 60 s); annealing in an oxidizer/hydrogen mixture (preferably N2O with 1% H2) for 5 to 60 s at 800 to 1050° C.

    摘要翻译： 本发明的一个实施例是形成超薄介电层的方法，该方法包括以下步骤：提供具有半导体表面的基板; 在半导体表面上形成含氧层; 将含氧层暴露于含氮等离子体以在整个含氧层中产生均匀的氮分布; 并重新氧化和退火层以稳定氮分布，治愈等离子体诱导的损伤并降低界面缺陷密度。该退火步骤选自四种再氧化技术：在H2和N2的混合物中连续退火 （优选小于20％H 2），然后是O 2和N 2（优选小于20％O 2）的混合物;通过尖峰状升温（优选在1000至1150℃下优选小于1秒）在氮气中退火 （优选为N 2 / O 2或N 2 O / H 2）;通过在减压的氨中快速热加热（优选在600至1000℃下5至60秒）进行退火;在氧化剂/氢气混合物（优选N 2 O 1％H 2）在800至1050℃下进行5至60秒。

    Method of forming thin silicon nitride or silicon oxynitride gate dielectrics
    4.
    发明授权
    Method of forming thin silicon nitride or silicon oxynitride gate dielectrics 失效
    形成薄氮化硅或氮氧化硅栅极电介质的方法

    公开(公告)号：US6136654A

    公开(公告)日：2000-10-24

    申请号：US984967

    申请日：1997-12-04

    申请人： Robert Kraft ,  Sunil Hattangady ,  Douglas T. Grider

    发明人： Robert Kraft ,  Sunil Hattangady ,  Douglas T. Grider

    IPC分类号： H01L21/28 ,  H01L21/8234 ,  H01L29/51 ,  H01L21/336 ,  H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/28185 ,  H01L21/28202 ,  H01L21/823462 ,  H01L29/518 ,  H01L29/513

    摘要： An embodiment of the instant invention is a method of forming a dielectric layer, the method comprising the steps of: providing a semiconductor substrate (substrate 12), the substrate having a surface; forming an oxygen-containing layer (layer 14) on the semiconductor substrate; and subjecting the oxygen-containing layer to a nitrogen containing plasma (plasma 16) so that the nitrogen is either incorporated into the oxygen-containing layer (see regions 18, 19, and 20) or forms a nitride layer at the surface of the substrate (region 22). Using this embodiment of the instant invention, the dielectric layer can be substantially free of hydrogen. Preferably, the oxygen-containing layer is an SiO.sub.2 layer or it is comprised of oxygen and nitrogen (preferably an oxynitride layer). The plasma is, preferably, a high-density plasma. Preferably, a source of nitrogen is introduced to the plasma to form the nitrogen containing plasma. The source of nitrogen is preferably comprised of a material consisting of: N.sub.2, NH.sub.3, NO, N.sub.2 O, or a mixture thereof.

    摘要翻译： 本发明的一个实施例是一种形成电介质层的方法，所述方法包括以下步骤：提供半导体衬底（衬底12），所述衬底具有表面; 在半导体衬底上形成含氧层（层14）; 并使含氧层进入含氮等离子体（等离子体16），使得氮气被引入到含氧层（参见区域18,19和20）中，或者在衬底的表面形成氮化物层 （区域22）。 使用本发明的该实施例，电介质层可以基本上不含氢。 优选地，含氧层是SiO 2层或由氧和氮（优选氮氧化物层）组成。 等离子体优选为高密度等离子体。 优选地，将氮源引入等离子体以形成含氮等离子体。 氮源优选由由N 2，NH 3，NO，N 2 O或其混合物组成的材料组成。

    Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer
    7.
    发明授权
    Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer 失效
    半导体器件具有通过单晶假晶中间层与不同材料接合的半导体衬底

    公开(公告)号：US5168330A

    公开(公告)日：1992-12-01

    申请号：US620574

    申请日：1990-12-03

    申请人： Daniel J. Vitkavage ,  Gaius G. Fountain ,  Sunil Hattangady ,  Ronald A. Rudder ,  Robert J. Markunas

    发明人： Daniel J. Vitkavage ,  Gaius G. Fountain ,  Sunil Hattangady ,  Ronald A. Rudder ,  Robert J. Markunas

    IPC分类号： H01L29/10 ,  H01L29/47 ,  H01L29/51 ,  H01L29/872

    CPC分类号： H01L29/872 ,  H01L29/1075 ,  H01L29/1079 ,  H01L29/1091 ,  H01L29/47 ,  H01L29/475 ,  H01L29/51

    摘要： A semiconductor device including a single crystal semiconductor host material having a surface; an ultrathin pseudomorphic single crystal epitaxial interlayer formed on the surface of the host material, wherein the interlayer is formed of a material and has a thickness selected so that the material of the interlayer is elastically deformed on the surface of the host material to match the lattice constant of the interlayer material with the lattice constant of the host material; and a further material incompatible with the host material when interfaced directly with the host material, but compatible with the interlayer, provided on the interlayer and thereby interfaced with the host material to perform a predetermined function with respect to the interlayer and the host material. In a preferred embodiment, the host material is a material selected from the group consisting of Ge, GaAs, InSb, InP, group II-V compounds and alloys thereof; the interlayer material is formed of pseudomorphic silicon, having a thickness of approximately 10 .ANG. and the further material is formed of SiO.sub.2 or a conductive material.

    摘要翻译： 一种包括具有表面的单晶半导体主体材料的半导体器件; 形成在主体材料的表面上的超薄假晶单晶外延中间层，其中中间层由材料形成，并且具有选择的厚度，使得中间层的材料在主体材料的表面上弹性变形以匹配晶格 中间层材料的常数与主体材料的晶格常数; 以及当与主体材料直接接合但与中间层相容但与中间层相连并且由此与主体材料相接触以相对于中间层和主体材料执行预定功能时与主体材料不相容的另一材料。 在优选的实施方案中，主体材料是选自Ge，GaAs，InSb，InP，II-V族化合物及其合金的材料; 中间层材料由假晶硅形成，厚度约为10，另外的材料由SiO2或导电材料形成。