公开(公告)号：US06191476B1

公开(公告)日：2001-02-20

申请号：US08859571

申请日：1997-05-20

申请人： Kunihiro Takahashi ,  Mizuaki Suzuki ,  Tsuneo Yamazaki ,  Hiroaki Takasu ,  Kunio Nakajima ,  Atsushi Sakurai ,  Tadao Iwaki ,  Yoshikazu Kojima ,  Masaaki Kamiya

发明人： Kunihiro Takahashi ,  Mizuaki Suzuki ,  Tsuneo Yamazaki ,  Hiroaki Takasu ,  Kunio Nakajima ,  Atsushi Sakurai ,  Tadao Iwaki ,  Yoshikazu Kojima ,  Masaaki Kamiya

IPC分类号： H01L2310

CPC分类号： G02F1/13454 ,  G02F1/133512 ,  G02F2001/136281 ,  H01L23/36 ,  H01L23/367 ,  H01L27/12 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： To provide a semiconductor substrate and a light-valve semiconductor substrate capable of preventing the threshold value of a MOS transistor on a single-crystal silicon device forming layer from increasing and forming a MOS integrated circuit with a high reliability even for a long-time operation. A semiconductor substrate and a light-valve semiconductor substrate comprising a single-crystal silicon thin-film device forming layer 5001 formed above an insulating substrate 5004 through an adhesive layer 5003 and an insulating layer 5002 formed on the single-crystal silicon thin-film device forming layer, wherein a heat conductive layers 5201 and 5202 made of a material with a high heat conductivity are arranged between the single-crystal silicon thin-film device forming layer and the adhesive layer and on the insulating layer.

摘要翻译： 为了提供能够防止单晶硅器件形成层上的MOS晶体管的阈值的半导体衬底和光阀半导体衬底，即使对于长时间操作而增加并形成具有高可靠性的MOS集成电路 。 一种半导体衬底和一个光阀半导体衬底，它包括通过粘合剂层5003形成在绝缘衬底5004上的单晶硅薄膜器件形成层5001和形成在单晶硅薄膜器件上的绝缘层5002 形成层，其中在单晶硅薄膜器件形成层和粘合剂层之间以及绝缘层上布置由具有高导热性的材料制成的导热层5201和5202。

公开(公告)号：US5434433A

公开(公告)日：1995-07-18

申请号：US106418

申请日：1993-08-13

申请人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

发明人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

IPC分类号： G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/36 ,  H01L21/77 ,  H01L27/12 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L27/1203 ,  H01L27/1214 ,  G02F2001/136281 ,  G02F2202/105

摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve. The semiconductor device for a light valve is constructed by a semiconductor substrate composed of a bulk single crystal silicon having an opaque thick portion and a thin transparent portion. A pixel array is formed in the transparent portion. A drive circuit is formed in a top face of the opaque portion. A transparent support substrate is laminated to the top face of the semiconductor substrate for reinforcement. A bulk portion of the semiconductor substrate is removed from a back face thereof by selective etching to provide the transparent portion.

摘要翻译： 利用半导体衬底整体地形成驱动电路和像素阵列以产生用于光阀的透明半导体器件。 用于光阀的半导体器件由具有不透明厚部分和薄透明部分的大块单晶硅构成的半导体衬底构成。 在透明部分中形成像素阵列。 驱动电路形成在不透明部分的顶面。 将透明支撑基板层叠到半导体基板的顶面以进行加强。 通过选择性蚀刻从其背面去除半导体衬底的主体部分以提供透明部分。

公开(公告)号：US06187605B1

公开(公告)日：2001-02-13

申请号：US08308564

申请日：1994-09-19

申请人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

发明人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

IPC分类号： H01L2100

CPC分类号： H01L27/1214 ,  G02F1/13454 ,  G02F2001/136281 ,  G02F2202/105 ,  H01L27/1203

摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve. The semiconductor device for a light valve is constructed of a semiconductor substrate composed of a bulk single crystal silicon having an opaque thick portion and a thin transparent portion. A pixel array is formed in the transparent portion. A drive circuit is formed in a top face of the opaque portion. A transparent support substrate is laminated to the top face of the semiconductor substrate for reinforcement. A bulk portion of the semiconductor substrate is removed from a back face thereof by selective etching to provide the transparent portion.

摘要翻译： 利用半导体衬底整体地形成驱动电路和像素阵列以产生用于光阀的透明半导体器件。 用于光阀的半导体器件由具有不透明厚部分和薄透明部分的块状单晶硅构成的半导体衬底构成。 在透明部分中形成像素阵列。 驱动电路形成在不透明部分的顶面。 将透明支撑基板层叠到半导体基板的顶面以进行加强。 通过选择性蚀刻从其背面去除半导体衬底的主体部分以提供透明部分。

公开(公告)号：US5633176A

公开(公告)日：1997-05-27

申请号：US463687

申请日：1995-06-05

申请人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

发明人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

IPC分类号： G02F1/1362 ,  H01L27/12 ,  H01L21/84 ,  H01L21/304

CPC分类号： G02F1/13454 ,  H01L27/12 ,  H01L27/1203 ,  G02F2001/136281 ,  G02F2202/105 ,  Y10S438/977

摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve comprising a pixel array region and a drive circuit region on a major face of the semiconductor substrate. A stopper film is formed on the major face of the semiconductor substrate at the pixel array region, and a pixel array is formed over the silicon oxide stopper film. A drive circuit is formed on the drive circuit region, and silicon oxide posts are embedded in the major face of the semiconductor substrate at the drive circuit region. A thickness of the semiconductor substrate is then selectively removed from a back face opposite to the major face thereof to reach the stopper film. After the selective removing step, the portion of the semiconductor substrate under the pixel region is completely removed while a portion of the semiconductor substrate under the drive circuit region remains.

摘要翻译： 半导体衬底被用于整体形成驱动电路和像素阵列以产生用于光阀的透明半导体器件，其包括在半导体衬底的主面上的像素阵列区域和驱动电路区域。 在像素阵列区域的半导体基板的主面上形成有阻挡膜，在氧化硅阻挡膜上形成像素阵列。 在驱动电路区域上形成驱动电路，在驱动电路区域，氧化硅柱嵌入半导体基板的主面。 然后从与其主面相反的背面选择性地去除半导体衬底的厚度以到达阻挡膜。 在选择性去除步骤之后，半导体衬底在像素区域下方的部分被完全去除，而驱动电路区域下的半导体衬底的一部分保留。

公开(公告)号：US5574292A

公开(公告)日：1996-11-12

申请号：US57986

申请日：1993-05-05

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Tsuneo Yamazaki ,  Tadao Iwaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Tsuneo Yamazaki ,  Tadao Iwaki

IPC分类号： H01L29/78 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L27/1203 ,  H01L29/78609 ,  H01L29/78621 ,  G02F2202/105

摘要： A semiconductor device has an integrated circuit formed in a monosilicon layer provided on an electrically insulative material. The monosilicon layer has an integrated circuit formed thereon, and a passivation film covers the integrated circuit. A support member is fixed to the electrically insulative material through an adhesive layer to support the monosilicon layer. The integrated circuit comprises an MIS transistor having a source region, drain region, and channel region formed in the monosilicon layer. The semiconductor device is suitable for use in a high speed, high capacity liquid crystal light valve having a structure where a pixel switching element group and a peripheral driver circuit are formed integrally on a common substrate.

摘要翻译： 半导体器件具有形成在设置在电绝缘材料上的单硅层中的集成电路。 单晶硅层具有形成在其上的集成电路，钝化膜覆盖集成电路。 支撑构件通过粘合剂层固定到电绝缘材料以支撑单硅层。 集成电路包括具有形成在单硅层中的源极区，漏极区和沟道区的MIS晶体管。 该半导体装置适用于具有像素开关元件组和周边驱动电路一体地形成在共同的基板上的结构的高速，高容量的液晶光阀。

公开(公告)号：US5486708A

公开(公告)日：1996-01-23

申请号：US264635

申请日：1994-06-23

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate. The multi-layer substrate is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film. A transparent opposite substrate is also formed so that the optical transparency of the electrooptical substance is controlled by the switching elements.

摘要翻译： 具有双面布线结构的半导体器件，其中单晶半导体薄膜与晶体管元件整体形成并层压在绝缘薄膜上。 单晶半导体薄膜形成有通孔，并且绝缘薄膜在其背面形成有电极和屏蔽膜。 还公开了使用该半导体器件的光阀装置。 在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。 还公开了一种微型高密度光阀装置。 在该光阀装置中，在多层基板之间配置有电光物质。 多层基板在绝缘膜的相对侧的电极和屏蔽膜上形成有通过绝缘膜形成有分组元件的一侧。 还形成透明的相对基板，使得电光物质的光学透明度由开关元件控制。

公开(公告)号：US5572045A

公开(公告)日：1996-11-05

申请号：US460538

申请日：1995-06-02

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： Herein disclosed are a semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film formed integrally with transistor elements is laminated on an insulating thin film and is formed with through holes and in which the insulating thin film is formed on its back with electrodes and a shielding film, and a light valve device using the semiconductor device. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate, which is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film, and a transparent opposite substrate, so that the optical transparency of the electrooptical substance is controlled by the switching elements.

摘要翻译： 这里公开了具有双面布线结构的半导体器件，其中与绝缘薄膜层叠与晶体管元件一体形成的单晶半导体薄膜并形成有通孔，并且其中形成绝缘薄膜 其背面具有电极和屏蔽膜，以及使用该半导体器件的光阀装置。 在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。 还公开了一种微型高密度光阀装置。 在该光阀装置中，在形成有电极的多层基板和通过绝缘膜形成有分组元件的一侧的绝缘膜的相对侧的屏蔽膜之间设置电光物质， 透明的相对基板，使得电光物质的光学透明度由开关元件控制。

公开(公告)号：US5728591A

公开(公告)日：1998-03-17

申请号：US460536

申请日：1995-06-02

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： A process for manufacturing a light valve device comprises forming a transparent insulating thin film layer on a surface of a semiconductor substrate, and forming a single crystal semiconductor thin film on a surface of the transparent insulating thin film layer. A portion of the single crystal semiconductor thin film is then removed and at least one pixel electrode is formed on the transparent insulating thin film layer at a region where the single crystal semiconductor thin film has been removed. A driving unit is then formed in the single crystal semiconductor thin film. Thereafter, a carrier substrate is laminated using an adhesive on the surface of the semiconductor substrate at a region corresponding to the pixel electrode and the driving unit. The semiconductor substrate is then removed to expose a surface of the transparent insulating thin film layer and through-holes and a metal film are formed on the exposed surface thereof. Thereafter, the metal film is removed to form a light shielding layer for covering at least a portion of a region of the transparent insulating thin film layer occupied by the driving unit and to form an electrode pad for connection to the driving unit through the through-holes. A substrate is then arranged opposite to the transparent insulating thin film to define a gap therebetween, and an electrooptical material is disposed in the gap.

摘要翻译： 一种制造光阀装置的方法包括在半导体衬底的表面上形成透明绝缘薄膜层，并在透明绝缘薄膜层的表面上形成单晶半导体薄膜。 然后去除单晶半导体薄膜的一部分，并且在去除了单晶半导体薄膜的区域上，在透明绝缘薄膜层上形成至少一个像素电极。 然后在单晶半导体薄膜中形成驱动单元。 此后，在对应于像素电极和驱动单元的区域，在半导体衬底的表面上使用粘合剂层叠载体衬底。 然后去除半导体衬底以暴露透明绝缘薄膜层的表面，并且在其暴露表面上形成通孔和金属膜。 此后，去除金属膜以形成遮光层，用于覆盖由驱动单元占据的透明绝缘薄膜层的至少一部分区域，并形成用于通过贯通孔连接到驱动单元的电极焊盘， 孔。 然后将衬底布置成与透明绝缘薄膜相对以在其间形成间隙，并且在该间隙中设置电光材料。

公开(公告)号：US5618739A

公开(公告)日：1997-04-08

申请号：US459834

申请日：1995-06-02

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： C25F3/04 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84

CPC分类号： G02F1/13454 ,  C25F3/04 ,  H01L21/76264 ,  H01L27/1214 ,  H01L29/66772 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363

摘要： A process for manufacturing a semiconductor device comprises forming an SOI substrate by depositing an insulating film of silicon dioxide on a surface of a temporary silicon substrate, thermally bonding a semiconductor substrate of single crystal silicon on a surface of the insulating film, and polishing the semiconductor substrate to form a single crystal semiconductor thin film. A semiconductor integrated circuit is then formed in the single crystal semiconductor thin film. Thereafter, a support substrate is fixedly adhered in face-to-face relation to a surface of the semiconductor integrated circuit opposite to the temporary substrate. The temporary substrate is then removed to expose a surface of the insulating film. The exposed surface of the insulating film is then subjected to a treatment including at least forming an electrode.

摘要翻译： 一种制造半导体器件的方法包括：通过在临时硅衬底的表面上沉积二氧化硅绝缘膜来形成SOI衬底，将绝缘膜的表面上的单晶硅的半导体衬底热粘合，并且研磨半导体 衬底以形成单晶半导体薄膜。 然后在单晶半导体薄膜中形成半导体集成电路。 此后，支撑基板以与临时基板相对的半导体集成电路的表面面对面的方式固定地粘接。 然后移除临时衬底以暴露绝缘膜的表面。 然后对绝缘膜的暴露表面进行至少包括形成电极的处理。

公开(公告)号：US5347154A

公开(公告)日：1994-09-13

申请号：US791912

申请日：1991-11-13

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L27/01 ,  H01L27/13

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate. The multi-layer substrate is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film. A transparent opposite substrate is also formed so that the optical transparency of the electrooptical substance is controlled by the switching elements.

摘要翻译： 具有双面布线结构的半导体器件，其中单晶半导体薄膜与晶体管元件整体形成并层压在绝缘薄膜上。 单晶半导体薄膜形成有通孔，并且绝缘薄膜在其背面形成有电极和屏蔽膜。 还公开了使用该半导体器件的光阀装置。 在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。 还公开了一种微型高密度光阀装置。 在该光阀装置中，在多层基板之间配置有电光物质。 多层基板在绝缘膜的相对侧的电极和屏蔽膜上形成有通过绝缘膜形成有分组元件的一侧。 还形成透明的相对基板，使得电光物质的光学透明度由开关元件控制。