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    Symmetric tunable inductively coupled HDP-CVD reactor
    2.
    发明授权
    Symmetric tunable inductively coupled HDP-CVD reactor 失效
    对称可调谐电感耦合HDP-CVD反应堆

    公开(公告)号：US06170428B2

    公开(公告)日：2001-01-09

    申请号：US08679927

    申请日：1996-07-15

    申请人： Fred C. Redeker ,  Farhad Moghadam ,  Hiroji Hanawa ,  Tetsuya Ishikawa ,  Dan Maydan ,  Shijian Li ,  Brian Lue ,  Robert J. Steger ,  Manus Wong ,  Yaxin Wong ,  Ashok K. Sinha

    发明人： Fred C. Redeker ,  Farhad Moghadam ,  Hiroji Hanawa ,  Tetsuya Ishikawa ,  Dan Maydan ,  Shijian Li ,  Brian Lue ,  Robert J. Steger ,  Manus Wong ,  Yaxin Wong ,  Ashok K. Sinha

    IPC分类号： C23C1600

    CPC分类号： H01J37/32449 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32862

    摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers having sub 0.5 micron feature sizes having aspect ratios higher than 1.2:1. The system of the present invention includes: a dual RF zone inductively coupled plasma source configuration capable of producing radially tunable ion currents across the wafer; a dual zone gas distribution system to provide uniform deposition properties across the wafer surface; temperature controlled surfaces to improve film adhesion and to control extraneous particle generation; a symmetrically shaped turbomolecular pumped chamber body to eliminate gas flow or plasma ground azimuthal asymmetries; a dual helium cooling zone electrostatic chuck to provide and maintain uniform wafer temperature during processing; an all ceramic/aluminum alloy chamber construction to eliminate chamber consumables; and a remote fluorine based plasma chamber cleaning system for high chamber cleaning rate without chuck cover plates.

    摘要翻译： 本发明提供一种使用同时沉积和溅射掺杂和未掺杂的二氧化硅的HDP-CVD工具，其能够在具有高于1.2:1的纵横比的0.5微米特征尺寸的晶片上具有优异的间隙填充和覆盖膜沉积。 本发明的系统包括：双RF区电感耦合等离子体源配置，其能够跨晶片产生径向可调离子电流; 双区气体分配系统，以在晶片表面上提供均匀的沉积性能; 温度控制表面，以改善膜的附着力并控制外来颗粒的产生; 一个对称成形的涡轮分子抽吸室体，以消除气体流动或等离子体地面方位不对称性; 双氦冷却区静电卡盘，在加工过程中提供并保持晶圆温度均匀; 全陶瓷/铝合金室结构，可消除室内耗材; 以及远程氟基等离子体室清洁系统，用于无卡盘盖板的高室清洁率。

    Substrate support with pressure zones having reduced contact area and temperature feedback
    3.
    发明授权
    Substrate support with pressure zones having reduced contact area and temperature feedback 失效
    具有减小的接触面积和温度反馈的压力区的基板支撑

    公开(公告)号：US5761023A

    公开(公告)日：1998-06-02

    申请号：US641147

    申请日：1996-04-25

    申请人： Brian Lue ,  Tetsuya Ishikawa ,  Fred C. Redeker ,  Manus Wong ,  Shijian Li

    发明人： Brian Lue ,  Tetsuya Ishikawa ,  Fred C. Redeker ,  Manus Wong ,  Shijian Li

    IPC分类号： H01L21/302 ,  G03F7/20 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

    CPC分类号： H01L21/6875 ,  G03F7/707 ,  G03F7/70708 ,  H01L21/6833

    摘要： An improved substrate support and method for operating in which multiple pressure zones are provided on the surface of the substrate support. A seal area is provided between the different zones to allow different gas pressures in the two zones. A higher gas pressure is provided to a zone corresponding to an area of the substrate where greater heat transfer is desired. The gap between the substrate support and the gas pressure are selected to provide the desired amount of heat transfer. Another aspect is limited substrate contact using protrusions, to maximize heat transfer gas flow. A closed loop control system varies the heat transfer gas pressure in accordance with a temperature sensor. For an electrostatic chuck, the dielectric thickness is varied to give a higher electrostatic force at the periphery of the substrate.

    摘要翻译： 改进的基板支撑件和操作方法，其中多个压力区域设置在基板支撑件的表面上。 在不同区域之间设置密封区域以允许两个区域中的不同气体压力。 更高的气体压力被提供给对应于需要更大热传递的基底区域的区域。 选择衬底支撑件和气体压力之间的间隙以提供所需量的热传递。 另一方面是使用突起限制衬底接触，以使热传递气流最大化。 闭环控制系统根据温度传感器改变传热气体压力。 对于静电卡盘，电介质厚度是变化的，以便在衬底的周围产生较高的静电力。

    Welded susceptor assembly
    4.
    发明授权
    Welded susceptor assembly 失效
    焊接基座组件

    公开(公告)号：US5522937A

    公开(公告)日：1996-06-04

    申请号：US237084

    申请日：1994-05-03

    申请人： Sandy M. Chew ,  Dale R. DuBois ,  Ronald L. Rose ,  Manus Wong

    发明人： Sandy M. Chew ,  Dale R. DuBois ,  Ronald L. Rose ,  Manus Wong

    IPC分类号： C23C16/44 ,  C23C16/458 ,  C23C16/50 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/687 ,  C23C16/00

    CPC分类号： H01L21/68764 ,  C23C16/458 ,  H01L21/68707 ,  H01L21/68785 ,  H01L21/68792

    摘要： A susceptor support arm assembly in a substrate processing chamber includes a secure ground connection between the susceptor and ground. An aluminum wire rope is welded to a winged terminal lug which is tightly inserted into a hole in a susceptor hub. The wings of the lug are then welded to the hub. The wire rope, now permanently attached to the susceptor hub, is routed through an opening in the susceptor end of a ceramic susceptor support arm, able to pass the ground end lug of the wire rope, through a channel in the support arm back to the susceptor arm support device, and to ground. The channel in the susceptor arm has grooves in its sides to receive a paddle shaped ceramic cover to enclose the channel and the bottom of the hub end of the susceptor arm. The cover insulates, isolates, and shields the grounding wire and thermocouple leads being routed from the susceptor hub back to the support end of the susceptor arm from exposure to the high intensity radiant energy directed at the back of the susceptor. Conical spring washers and shoulder screws, attach the metallic pieces (e.g. the susceptor hub) to the ceramic susceptor hub arm allowing for the differential thermal expansion between pieces without overstressing the ceramic material clamped. Surface treatment of the metallic pieces enhances their corrosion resistance.

    摘要翻译： 衬底处理室中的感受器支撑臂组件包括在基座和地面之间的牢固接地连接。 铝丝绳焊接到紧密插入基座毂孔中的翼形端子凸耳上。 接头的翼部然后焊接到轮毂。 现在永久地连接到基座轮毂上的钢丝绳穿过陶瓷基座支撑臂的基座端部的开口，该开口能够使钢丝索的接地端部凸起通过支撑臂中的通道回到 感受器臂支撑装置，并接地。 基座臂中的通道在其侧面具有凹槽，以容纳桨形陶瓷盖以封闭通道和基座臂的毂端的底部。 盖子将接地线和热电偶引线绝缘，隔离和屏蔽，从接受器轮毂回到基座臂的支撑端，暴露于指向基座背面的高强度辐射能。 圆锥形弹簧垫圈和肩螺钉，将金属片（例如，基座毂）连接到陶瓷基座轮毂臂上，允许片之间的不同热膨胀，而不会对夹持的陶瓷材料施加过大的应力。 金属片的表面处理提高了其耐腐蚀性。