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    Nonvolatile semiconductor memory device
    7.
    发明授权
    Nonvolatile semiconductor memory device 失效
    非易失性半导体存储器件

    公开(公告)号：US08072021B2

    公开(公告)日：2011-12-06

    申请号：US12188617

    申请日：2008-08-08

    申请人： Kenji Gomikawa ,  Tadashi Iguchi ,  Mitsuhiro Noguchi ,  Shoichi Watanabe

    发明人： Kenji Gomikawa ,  Tadashi Iguchi ,  Mitsuhiro Noguchi ,  Shoichi Watanabe

    IPC分类号： H01L29/788

    CPC分类号： H01L29/792 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

    摘要： A memory cell includes a floating gate electrode, a first inter-electrode insulating film and a control gate electrode. A peripheral transistor includes a lower electrode, a second inter-electrode insulating film and an upper electrode. The lower electrode and the upper electrode are electrically connected via an opening provided on the second inter-electrode insulating film. The first and second inter-electrode insulating films include a high-permittivity material, the first inter-electrode insulating film has a first structure, and the second inter-electrode insulating film has a second structure different from the first structure.

    摘要翻译： 存储单元包括浮置栅电极，第一电极间绝缘膜和控制栅电极。 外围晶体管包括下电极，第二电极间绝缘膜和上电极。 下电极和上电极通过设置在第二电极间绝缘膜上的开口电连接。 第一和第二电极间绝缘膜包括高电容率材料，第一电极间绝缘膜具有第一结构，第二电极间绝缘膜具有与第一结构不同的第二结构。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    8.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 审中-公开
    非易失性半导体存储器件

    公开(公告)号：US20120037973A1

    公开(公告)日：2012-02-16

    申请号：US13281083

    申请日：2011-10-25

    申请人： Kenji GOMIKAWA ,  Tadashi Iguchi ,  Mitsuhiro Noguchi ,  Shoichi Watanabe

    发明人： Kenji GOMIKAWA ,  Tadashi Iguchi ,  Mitsuhiro Noguchi ,  Shoichi Watanabe

    IPC分类号： H01L29/788 ,  H01L29/792

    CPC分类号： H01L29/792 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

    摘要： A memory cell includes a floating gate electrode, a first inter-electrode insulating film and a control gate electrode. A peripheral transistor includes a lower electrode, a second inter-electrode insulating film and an upper electrode. The lower electrode and the upper electrode are electrically connected via an opening provided on the second inter-electrode insulating film. The first and second inter-electrode insulating films include a high-permittivity material, the first inter-electrode insulating film has a first structure, and the second inter-electrode insulating film has a second structure different from the first structure.

    摘要翻译： 存储单元包括浮置栅电极，第一电极间绝缘膜和控制栅电极。 外围晶体管包括下电极，第二电极间绝缘膜和上电极。 下电极和上电极通过设置在第二电极间绝缘膜上的开口电连接。 第一和第二电极间绝缘膜包括高电容率材料，第一电极间绝缘膜具有第一结构，第二电极间绝缘膜具有与第一结构不同的第二结构。

    Nonvolatile semiconductor memory
    9.
    发明授权
    Nonvolatile semiconductor memory 有权
    非易失性半导体存储器

    公开(公告)号：US07804123B2

    公开(公告)日：2010-09-28

    申请号：US11958732

    申请日：2007-12-18

    申请人： Shoichi Watanabe

    发明人： Shoichi Watanabe

    IPC分类号： H01L29/788

    CPC分类号： H01L27/11524 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42336 ,  H01L29/66825 ,  H01L29/7881

    摘要： A nonvolatile semiconductor memory according to an example of the present invention includes first and second diffusion layers, a channel formed between the first and second diffusion layers, a gate insulating film formed on the channel, a floating gate electrode formed on the gate insulating film, an inter-gate insulating film formed on the floating gate electrode, and a control gate electrode formed on the inter-gate insulating film. An end portion of the inter-gate insulating film in a direction of channel length is on an inward side of a side surface of the floating gate electrode or a side surface of the control gate electrode.

    摘要翻译： 根据本发明实施例的非易失性半导体存储器包括第一和第二扩散层，形成在第一和第二扩散层之间的沟道，形成在沟道上的栅极绝缘膜，形成在栅极绝缘膜上的浮置栅电极， 形成在浮置栅电极上的栅极间绝缘膜，以及形成在栅极间绝缘膜上的控制栅电极。 栅极间绝缘膜的沟道长度方向的端部位于浮置栅电极的侧面的内侧或控制栅电极的侧面。

    Stacked-typed duplex heat exchanger
    10.
    发明授权
    Stacked-typed duplex heat exchanger 失效
    堆叠式双工换热器

    公开(公告)号：US5720341A

    公开(公告)日：1998-02-24

    申请号：US747509

    申请日：1996-11-12

    申请人： Mikio Watanabe ,  Takayuki Yasutake ,  Shoichi Watanabe ,  Yuji Hasegawa

    发明人： Mikio Watanabe ,  Takayuki Yasutake ,  Shoichi Watanabe ,  Yuji Hasegawa

    IPC分类号： F28D1/02 ,  F28D1/03 ,  F28D1/04 ,  F28F3/02 ,  F28F9/00 ,  F28F13/00

    CPC分类号： F28F9/002 ,  F28D1/024 ,  F28D1/0333 ,  F28D1/0341 ,  F28D1/0435 ,  F28F3/027 ,  F28D2021/0084 ,  F28D2021/0094 ,  F28F2210/04 ,  F28F2215/02 ,  F28F2270/00

    摘要： A duplex heat exchanger of the so-called stacked type has in principle a plurality of plate-shaped tubular elements (1) which are stacked side by side or one on another and a plurality of fins (2) each intervening between the adjacent tubular elements. Each tubular element is composed of flat tubular segments (3a, 4a) separated from each other and each communicating with one of bulged header portions (3b, 4b) of the tubular element, so that flow paths (3, 4) for heat exchanging media are formed through each tubular element. Two or more unit heat exchangers (X, Y) are defined integral with each other within the duplex heat exchanger, since the adjacent tubular elements (1) communicate with each other through the header portions (3b, 4b).

    摘要翻译： 所谓堆叠式的双相热交换器原则上具有多个彼此并排或彼此堆叠的板状管状元件（1），以及分别介于相邻的管状元件之间的多个翅片（2） 。 每个管状元件由彼此分离的平坦的管状部分（3a，4a）组成，并且每个与管状元件的凸起的头部（3b，4b）中的一个连通，从而使用于热交换介质的流动路径（3,4） 通过每个管状元件形成。 由于相邻的管状元件（1）通过集管部分（3b，4b）彼此连通，所以两个或多个单元热交换器（X，Y）在双工热交换器内彼此一体形成。