公开(公告)号：US06686274B1

公开(公告)日：2004-02-03

申请号：US09787743

申请日：2001-06-08

申请人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shuji Ikeda

发明人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shuji Ikeda

IPC分类号： H01L2144

CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L21/76877

摘要： In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.

摘要翻译： 在具有钴硅化物膜的半导体器件中，钴硅化物膜中至少含有镍或铁，以防止附着于薄膜变薄的电阻上升。

公开(公告)号：US09634316B2

公开(公告)日：2017-04-25

申请号：US14354900

申请日：2011-10-31

申请人： Hiromi Shimazu ,  Tomio Iwasaki

发明人： Hiromi Shimazu ,  Tomio Iwasaki

IPC分类号： H01M4/131 ,  H01M4/1391 ,  H01M4/525 ,  H01M4/66 ,  H01M4/04 ,  H01M10/0525

CPC分类号： H01M4/131 ,  H01M4/0421 ,  H01M4/0426 ,  H01M4/0428 ,  H01M4/1391 ,  H01M4/525 ,  H01M4/661 ,  H01M4/667 ,  H01M10/0525 ,  Y02E60/122

摘要： A lithium ion secondary battery includes a positive electrode capable of occluding and discharging lithium ions, a negative electrode capable of occluding and discharging the lithium ions, and a nonaqueous electrolyte including a lithium salt, and being reversively charged/discharged. The positive electrode includes a metal plate, a metal film formed on a surface of the metal plate, and a positive electrode active material layer, the metal film includes one or more metals selected from the group consisting of ruthenium, osmium, palladium, and platinum having a orientation, the positive electrode active material layer is a compound expressed by the following expression: LiCoxNi1-xO2, (where 0≦x≦1) and is epitaxially grown and formed on a surface of the metal film, and the positive electrode active material is formed such that a c axis of a crystal structure of the positive electrode active material is perpendicular to the metal film.

公开(公告)号：US06960832B2

公开(公告)日：2005-11-01

申请号：US10761333

申请日：2004-01-22

申请人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shuji Ikeda

发明人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shuji Ikeda

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L23/12 ,  H01L21/00

CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L21/76877

摘要： In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.

摘要翻译： 在具有钴硅化物膜的半导体器件中，钴硅化物膜中至少含有镍或铁，以防止附着于薄膜变薄的电阻上升。

公开(公告)号：US07459786B2

公开(公告)日：2008-12-02

申请号：US11155272

申请日：2005-06-17

申请人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Kensuke Ishikawa ,  Osamu Inoue ,  Takayuki Oshima

发明人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Kensuke Ishikawa ,  Osamu Inoue ,  Takayuki Oshima

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A reliable semiconductor device having a multilayer wiring structure formed of copper as a main component material, which constrains occurrence of voids caused by stress migration. In the multilayer wiring structure, a first insulation layer having a high barrier property and a compression stress, and making contact with the upper surface of a first wiring made of copper as a main component material, a second insulation film having a tensile stress, and a third insulation film having a dielectric constant which is lower than those of the first and second insulation film, are laminated one upon another in the mentioned order as viewed the bottom thereof, and a via hole is formed piercing through the first insulation film, the second insulation film and the third insulation film, making contact with the first wiring.

摘要翻译： 具有由铜作为主要成分材料形成的多层布线结构的可靠的半导体器件，其限制由应力迁移引起的空隙的发生。 在多层布线结构体中，具有高阻隔性和压缩应力的第一绝缘层，与由铜作为主要成分材料的第一布线的上表面接触，具有拉伸应力的第二绝缘膜，以及 具有低于第一绝缘膜和第二绝缘膜的介电常数的第三绝缘膜按照从底部开始的顺序依次层叠，并且形成穿过第一绝缘膜的通孔， 第二绝缘膜和第三绝缘膜，与第一布线接触。

公开(公告)号：US20060006543A1

公开(公告)日：2006-01-12

申请号：US11155272

申请日：2005-06-17

申请人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Kensuke Ishikawa ,  Osamu Inoue ,  Takayuki Oshima

发明人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Kensuke Ishikawa ,  Osamu Inoue ,  Takayuki Oshima

IPC分类号： H01L23/48

CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A reliable semiconductor device having a multilayer wiring structure formed of copper as a main component material, which constrains occurrence of voids caused by stress migration. In the multilayer wiring structure, a first insulation layer having a high barrier property and a compression stress, and making contact with the upper surface of a first wiring made of copper as a main component material, a second insulation film having a tensile stress, and a third insulation film having a dielectric constant which is lower than those of the first and second insulation film, are laminated one upon another in the mentioned order as viewed the bottom thereof, and a via hole is formed piercing thorough the first insulation film, the second insulation film and the third insulation film, making contact with the first wiring.

摘要翻译： 具有由铜作为主要成分材料形成的多层布线结构的可靠的半导体器件，其限制由应力迁移引起的空隙的发生。 在多层布线结构体中，具有高阻隔性和压缩应力的第一绝缘层，与由铜作为主要成分材料的第一布线的上表面接触，具有拉伸应力的第二绝缘膜，以及 介电常数低于第一绝缘膜和第二绝缘膜的介电常数的第三绝缘膜按照其底部的顺序一个接一个层叠，并且形成穿过第一绝缘膜的通孔， 第二绝缘膜和第三绝缘膜，与第一布线接触。

公开(公告)号：US20140315090A1

公开(公告)日：2014-10-23

申请号：US14354900

申请日：2011-10-31

申请人： Hiromi Shimazu ,  Tomio Iwasaki

发明人： Hiromi Shimazu ,  Tomio Iwasaki

IPC分类号： H01M4/131

CPC分类号： H01M4/131 ,  H01M4/0421 ,  H01M4/0426 ,  H01M4/0428 ,  H01M4/1391 ,  H01M4/525 ,  H01M4/661 ,  H01M4/667 ,  H01M10/0525 ,  Y02E60/122

摘要： A lithium ion secondary battery includes a positive electrode capable of occluding and discharging lithium ions, a negative electrode capable of occluding and discharging the lithium ions, and a nonaqueous electrolyte including a lithium salt, and being reversively charged/discharged. The positive electrode includes a metal plate, a metal film formed on a surface of the metal plate, and a positive electrode active material layer, the metal film includes one or more metals selected from the group consisting of ruthenium, osmium, palladium, and platinum having a orientation, the positive electrode active material layer is a compound expressed by the following expression: LiCoxNi1-xO2, (where 0≦x≦1) and is epitaxially grown and formed on a surface of the metal film, and the positive electrode active material is formed such that a c axis of a crystal structure of the positive electrode active material is perpendicular to the metal film.

摘要翻译： 锂离子二次电池包括能够吸收和释放锂离子的正极，能够吸收和排出锂离子的负极，以及包含锂盐的非水电解质，并且被可逆充电/放电。 正极包括金属板，在金属板的表面上形成的金属膜和正极活性物质层，金属膜包括选自钌，锇，钯和铂中的一种以上的金属 具有取向的正极活性物质层是以下述式表示的化合物：LiCoxNi1-xO2，（其中0＆nlE; x＆nlE; 1），并且在金属膜的表面上外延生长并形成，正极活性 形成材料，使得正极活性物质的晶体结构的ac轴垂直于金属膜。

公开(公告)号：US20050056938A1

公开(公告)日：2005-03-17

申请号：US10901998

申请日：2004-07-30

申请人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta

发明人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/7685 ,  H01L21/76838 ,  H01L21/76852 ,  H01L23/53219 ,  H01L23/53223 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/48463 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/00

摘要： A semiconductor device has a wiring structure in which an insulating layer, a wiring layer made of Al and containing at least either Au or Ag as an additional element, and a protecting layer are sequentially laminated on a substrate, so that a peel-off does not occur at an interface between the Al film and a substratum insulative material in an Al wiring structure made of Al as a main component material.

摘要翻译： 半导体器件具有其中绝缘层，由Al制成的并且至少包含Au或Ag作为附加元素的布线层和保护层的布线结构，顺序层压在基板上，使得剥离 在由Al作为主要成分材料制成的Al布线结构中的Al膜和基底绝缘材料之间的界面处不发生。

公开(公告)号：US08186228B2

公开(公告)日：2012-05-29

申请号：US13024368

申请日：2011-02-10

申请人： Hiroyuki Ohta ,  Hiromi Shimazu ,  Yohei Tanno

发明人： Hiroyuki Ohta ,  Hiromi Shimazu ,  Yohei Tanno

IPC分类号： G01L1/00

CPC分类号： G01L1/2293

摘要： A strain measuring device includes a bridge circuit comprising a p-type impurity diffused resistor as a strain detecting portion and a bridge circuit comprising an n-type impurity diffused resistor as a strain detecting portion in a semiconductor single crystalline substrate, Sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, the impurity diffused resistor is configured to be a meander shape including strip lines and connecting portions.

摘要翻译： 应变测量装置包括桥式电路，其包括作为应变检测部分的p型杂质扩散电阻器和包括在半导体单晶衬底中的作为应变检测部分的n型杂质扩散电阻器的桥式电路，p电阻值 型杂质扩散电阻器比n型杂质扩散电阻器高1.67〜5倍。 此外，杂质扩散电阻器被构造为包括带状线和连接部分的曲折形状。

公开(公告)号：US07893810B2

公开(公告)日：2011-02-22

申请号：US11844374

申请日：2007-08-24

申请人： Hiroyuki Ohta ,  Hiromi Shimazu ,  Yohei Tanno

发明人： Hiroyuki Ohta ,  Hiromi Shimazu ,  Yohei Tanno

IPC分类号： G01L1/22

CPC分类号： G01L1/2293

摘要： A strain measuring device according to the present invention includes a bridged circuit comprising a p-type impurity diffused resistor as a strain detective portion and a bridged circuit comprising an n-type impurity diffused resistor as a strain detective portion in a semiconductor single crystalline substrate, and sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, it is preferable that the impurity diffused resistor be configured to be a meander shape comprising strip lines and connecting portions. Moreover, it is preferable that the number of strip lines in the p-type impurity diffused resistor be smaller than that in the n-type impurity diffused resistor.

摘要翻译： 根据本发明的应变测量装置包括：桥接电路，包括作为应变检测部分的p型杂质扩散电阻器和包括作为半导体单晶衬底中的应变检测部分的n型杂质扩散电阻器的桥接电路， p型杂质扩散电阻器的薄层电阻比n型杂质扩散电阻器的薄层电阻高1.67〜5倍。 此外，优选地，杂质扩散电阻器被构造为包括带状线和连接部分的曲折形状。 此外，优选的是，p型杂质扩散电阻器中的带状线的数量小于n型杂质扩散电阻器中的带状线数。

公开(公告)号：US20110259112A1

公开(公告)日：2011-10-27

申请号：US13177185

申请日：2011-07-06

申请人： Hiromi Shimazu ,  Hiroyuki Ohta ,  Yohei Tanno

发明人： Hiromi Shimazu ,  Hiroyuki Ohta ,  Yohei Tanno

IPC分类号： G01B7/16

CPC分类号： G01L1/2293 ,  G01B7/18 ,  G01L1/18

摘要： A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided.At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a direction.

摘要翻译： 提供能够高精度地测量特定方向的应变分量的机械量测量装置。 在半导体单晶基板和半导体芯片的内部形成有至少两对以上的桥式电路，并且这些桥式电路之一形成n型扩散电阻器，其中电流方向和电阻值的测量变化为 与半导体单晶硅基板的<100>方向并联，另一桥接电路由与<110>方向并联的p型扩散电阻器的组合构成。