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    SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCTION OF THE SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE EQUIPPED WITH THE SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCTION OF THE SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE EQUIPPED WITH THE SEMICONDUCTOR DEVICE 有权
    半导体器件，用于制造半导体器件的工艺，以及配备半导体器件的显示器件

    公开(公告)号：US20120193635A1

    公开(公告)日：2012-08-02

    申请号：US13500023

    申请日：2010-09-21

    申请人： Hiroshi Matsukizono ,  Tomohiro Kimura ,  Hiroyuki Ogawa

    发明人： Hiroshi Matsukizono ,  Tomohiro Kimura ,  Hiroyuki Ogawa

    IPC分类号： H01L29/786 ,  H01L21/20 ,  H01L29/02

    CPC分类号： G02F1/1362 ,  G02F1/13318 ,  G02F1/13338 ,  H01L27/1214

    摘要： A thin film diode (100A) includes a semiconductor layer (130) having first, second, and third semiconductor regions, a first insulating layer (122) formed on the semiconductor layer (130), and a second insulating layer (123) formed on the first insulating layer (122). The first semiconductor region (134A) contains an impurity of a first-conductivity type at a first concentration; the second semiconductor region (135A) contains an impurity of a second-conductivity type different from the first conductivity type at a second concentration; and the third semiconductor region (133A) contains the first-conductivity type impurity at a third concentration lower than the first concentration, or contains the second-conductivity type impurity at a third concentration lower than the second concentration. The first semiconductor region (134A) conforms to an aperture pattern in the second insulating layer (123), or the second semiconductor region (135A) conforms to an aperture pattern in the second insulating layer (123).

    摘要翻译： 薄膜二极管（100A）包括具有第一，第二和第三半导体区域的半导体层（130），形成在半导体层（130）上的第一绝缘层（122）和形成在第一绝缘层 第一绝缘层（122）。 第一半导体区域（134A）含有第一浓度的第一导电类型的杂质; 第二半导体区域（135A）在第二浓度下含有不同于第一导电类型的第二导电类型的杂质; 并且第三半导体区域（133A）含有比第一浓度低的第三浓度的第一导电型杂质，或者包含第二浓度低于第二浓度的第三浓度的第二导电型杂质。 第一半导体区域（134A）符合第二绝缘层（123）中的孔径图案，或者第二半导体区域（135A）符合第二绝缘层（123）中的孔径图案。

    Semiconductor device, process for production of the semiconductor device, and display device equipped with the semiconductor device
    2.
    发明授权
    Semiconductor device, process for production of the semiconductor device, and display device equipped with the semiconductor device 有权
    半导体装置，半导体装置的制造方法以及配备有该半导体装置的显示装置

    公开(公告)号：US08975637B2

    公开(公告)日：2015-03-10

    申请号：US13500023

    申请日：2010-09-21

    申请人： Hiroshi Matsukizono ,  Tomohiro Kimura ,  Hiroyuki Ogawa

    发明人： Hiroshi Matsukizono ,  Tomohiro Kimura ,  Hiroyuki Ogawa

    IPC分类号： H01L27/14 ,  G02F1/1362 ,  G02F1/133 ,  G02F1/1333 ,  H01L27/12

    CPC分类号： G02F1/1362 ,  G02F1/13318 ,  G02F1/13338 ,  H01L27/1214

    摘要： A thin film diode (100A) includes a semiconductor layer (130) having first, second, and third semiconductor regions, a first insulating layer (122) formed on the semiconductor layer (130), and a second insulating layer (123) formed on the first insulating layer (122). The first semiconductor region (134A) contains an impurity of a first-conductivity type at a first concentration; the second semiconductor region (135A) contains an impurity of a second-conductivity type different from the first conductivity type at a second concentration; and the third semiconductor region (133A) contains the first-conductivity type impurity at a third concentration lower than the first concentration, or contains the second-conductivity type impurity at a third concentration lower than the second concentration. The first semiconductor region (134A) conforms to an aperture pattern in the second insulating layer (123), or the second semiconductor region (135A) conforms to an aperture pattern in the second insulating layer (123).

    摘要翻译： 薄膜二极管（100A）包括具有第一，第二和第三半导体区域的半导体层（130），形成在半导体层（130）上的第一绝缘层（122）和形成在第一绝缘层 第一绝缘层（122）。 第一半导体区域（134A）含有第一浓度的第一导电类型的杂质; 第二半导体区域（135A）在第二浓度下含有不同于第一导电类型的第二导电类型的杂质; 并且第三半导体区域（133A）含有比第一浓度低的第三浓度的第一导电型杂质，或者包含第二浓度低于第二浓度的第三浓度的第二导电型杂质。 第一半导体区域（134A）符合第二绝缘层（123）中的孔径图案，或者第二半导体区域（135A）符合第二绝缘层（123）中的孔径图案。

    Transmitting apparatus, receiving apparatus, transmitting method, and receiving method
    4.
    发明授权
    Transmitting apparatus, receiving apparatus, transmitting method, and receiving method 有权
    发送装置，接收装置，发送方法和接收方法

    公开(公告)号：US09065598B2

    公开(公告)日：2015-06-23

    申请号：US13577599

    申请日：2011-12-09

    申请人： Mikihiro Ouchi ,  Tomohiro Kimura ,  Yoshinobu Matsumura

    发明人： Mikihiro Ouchi ,  Tomohiro Kimura ,  Yoshinobu Matsumura

    IPC分类号： H04L27/28 ,  H04L5/00 ,  H04L12/28

    CPC分类号： H04L5/0007 ,  H04L5/0053 ,  H04L12/2801 ,  H04N21/236 ,  H04N21/2381 ,  H04N21/2383 ,  H04N21/2385 ,  H04N21/2389 ,  H04N21/434 ,  H04N21/6112 ,  H04N21/64315

    摘要： In order to implement both a physical later pipe (PLP) structure and a plurality of receiver classes, a transmitting apparatus includes: a signaling information generation unit which generates signaling information including a transmission parameter for each of PLPs; a PLP processing group which performs processing based on the transmission parameter for each of the PLPs; and a transmitting unit which transmits data including the generated signaling information and PLP data for each of the PLPs. The PLP data is received by a receiving apparatus that is indicated by a flag of the PLP and is not received by another receiving apparatus, the receiving apparatuses being included in a plurality of receiving apparatuses classified under a plurality of states. The generated signaling information includes, as the transmission parameter for each of the PLPs, the flag of the PLP.

    摘要翻译： 为了实现物理以后的管道（PLP）结构和多个接收器类别，发送装置包括：信令信息生成单元，生成包括每个PLP的发送参数的信令信息; 基于每个PLP的传输参数执行处理的PLP处理组; 以及发送单元，其发送包括针对每个PLP的生成的信令信息和PLP数据的数据。 PLP数据由PLP的标志指示的接收装置接收，不被另一个接收装置接收，该接收装置被包括在多个状态下分类的多个接收装置中。 所生成的信令信息包括PLP的标志作为每个PLP的发送参数。

    OFDM reception device, OFDM reception integrated circuit, OFDM reception method, and OFDM reception program
    10.
    发明授权
    OFDM reception device, OFDM reception integrated circuit, OFDM reception method, and OFDM reception program 有权
    OFDM接收装置，OFDM接收集成电路，OFDM接收方法和OFDM接收程序

    公开(公告)号：US08451919B2

    公开(公告)日：2013-05-28

    申请号：US12438051

    申请日：2008-01-08

    申请人： Yoshinobu Matsumura ,  Tomohiro Kimura

    发明人： Yoshinobu Matsumura ,  Tomohiro Kimura

    IPC分类号： H04K1/10

    CPC分类号： H04W52/282 ,  H04B7/12 ,  H04L25/022 ,  H04L25/0232 ,  H04L25/03159 ,  H04L25/03821 ,  H04L27/2647 ,  H04W52/24

    摘要： An OFDM reception apparatus effectively suppresses a reduction in reception performance during high-speed mobile reception. The OFDM reception apparatus includes a transmission channel characteristic estimating unit for calculating a transmission channel characteristic value indicating phase and amplitude distortions in an OFDM signal for each sub-carrier, the phase and amplitude distortions occurring during propagation through a transmission channel, and calculating an n-th differentiation of the transmission channel characteristic value, and an interference component removing unit for using the transmission channel characteristic value and the n-th differentiation calculated for each of the sub-carriers by the transmission channel characteristic estimating unit, to remove an interference component between the sub-carriers from the OFDM signal.

    摘要翻译： OFDM接收装置有效地抑制了高速移动接收时的接收性能的降低。 OFDM接收装置包括传输信道特性估计单元，用于计算指示每个子载波的OFDM信号中的相位和幅度失真的传输信道特性值，在通过传输信道传播期间发生的相位和幅度失真，以及计算n 传输信道特性值的微分和干扰分量去除单元，用于通过传输信道特性估计单元使用为每个子载波计算的传输信道特性值和第n个微分，以消除干扰分量 在OFDM信号的子载波之间。