公开(公告)号：US5764363A

公开(公告)日：1998-06-09

申请号：US672331

申请日：1996-06-28

申请人： Hiroshi Ooki ,  Yutaka Iwasaki ,  Jun Iwasaki ,  Tsuneyuki Hagiwara

发明人： Hiroshi Ooki ,  Yutaka Iwasaki ,  Jun Iwasaki ,  Tsuneyuki Hagiwara

IPC分类号： G01B11/06 ,  G01N21/956 ,  G02B27/28 ,  G03F7/20 ,  G01J4/00

CPC分类号： G03F7/70483 ,  G01B11/0608 ,  G01N21/956 ,  G02B27/28

摘要： An observation apparatus of the present comprises (i) a light source for generating light; (ii) a separating optical system which splits the light from the light source into two different polarized light beams; (iii) a condenser optical system which converges the two polarized light beams from the separating optical system so as to respectively form light spots on two different positions on a sample object; (iv) a polarization selecting means which has a predetermined analyzer angle and selects a specific polarized light component from composite light made of the two polarized light beams by way of the sample object; (v) light detecting means which detects the polarized light component selected by the polarization selecting means; and (vi) phase difference adjustment means which adjusts a phase difference between the two polarized light beams by way of the sample object and guides composite light composed of the two polarized light beams as circularly polarized light to the polarization selecting means, when the sample object does not modulate both phase and amplitude of the light incident thereon. Accordingly, this observation apparatus can detect a phase difference generated between the two light components respectively emitted from both side of a level difference on the sample object.

摘要翻译： 本发明的观察装置包括：（i）用于产生光的光源; （ii）分离光学系统，其将来自光源的光分成两个不同的偏振光束; （iii）聚光器系统，其将来自分离光学系统的两个偏振光束会聚，以分别在样本物体上的两个不同位置上形成光点; （iv）偏振选择装置，其具有预定的分析器角度，并且通过样本对象从由两个偏振光束构成的复合光中选择特定偏振光分量; （v）光检测装置，其检测由偏振选择装置选择的偏振光分量; 以及（vi）相位差调整装置，当采样物体通过采样对象调节两个偏振光束之间的相位差并将由两个偏振光组成的复合光作为圆偏振光引导到偏振选择装置时， 不调制入射到其上的光的相位和幅度。 因此，该观察装置可以检测从样本物体的水平差两侧分别发射的两个光分量之间产生的相位差。

公开(公告)号：US07791718B2

公开(公告)日：2010-09-07

申请号：US11576379

申请日：2005-09-30

申请人： Tsuneyuki Hagiwara

发明人： Tsuneyuki Hagiwara

IPC分类号： G01B9/00

CPC分类号： G03F7/7085 ,  G03F7/70591 ,  G03F7/70666 ,  G03F7/70683 ,  G03F7/70941

摘要： Light is irradiated on a light-shielding pattern on an object surface side of a projection optical system, and light intensity distribution of the light having passed through the projection optical system and slits is detected while slits of an aerial image measuring unit on the image plane side of the projection optical system are moved within a plane perpendicular to the optical axis of the projection optical system, The information concerning the flare of the projection optical system is computed from the light intensity distribution, so that the influence of resist coated on a wafer used in a conventional exposing method can be eliminated, and highly accurate measurement of information concerning the flare can be realized. Further, measurement of information concerning the flare can be performed in a short time comparing to the exposing method because development process or the like of the wafer is not necessary.

摘要翻译： 光照射在投影光学系统的物体表面上的遮光图案上，并且在图像平面上检测通过投影光学系统和狭缝的光的光强度分布，同时空间图像测量单元的狭缝 投影光学系统的一侧在与投影光学系统的光轴垂直的平面内移动。根据光强度分布计算与投影光学系统的闪光有关的信息，使得涂覆在晶片上的抗蚀剂的影响 可以消除以常规曝光方法使用的方法，并且可以实现关于闪光的信息的高精度测量。 此外，由于不需要晶片的显影处理等，因此可以在与曝光方法相比较的短时间内进行关于闪光的信息的测量。

公开(公告)号：US07344808B2

公开(公告)日：2008-03-18

申请号：US10896946

申请日：2004-07-23

申请人： Tsuneo Numanami ,  Masayuki Nakatsu ,  Masayuki Mogi ,  Tsuneyuki Hagiwara ,  Naoto Kondo

发明人： Tsuneo Numanami ,  Masayuki Nakatsu ,  Masayuki Mogi ,  Tsuneyuki Hagiwara ,  Naoto Kondo

IPC分类号： G03F1/00

CPC分类号： G03F1/60

摘要： A photomask blank substrate is made by polishing a starting substrate to a specific flatness in a principal surface region on a top surface of the substrate so as to form a polished intermediate product, then additionally polishing the intermediate product. Substrates made in this way exhibit a good surface flatness at the time of wafer exposure. When a photomask fabricated from a blank obtained from such a substrate is held on the mask stage of a wafer exposure system with a vacuum chuck, the substrate surface undergoes minimal warping, enabling exposure patterns of small geometry to be written onto wafers to good position and linewidth accuracies.

摘要翻译： 通过将起始基板研磨到基板顶面的主表面区域中的特定平坦度，制成光掩模坯料，以形成抛光的中间产品，然后另外抛光中间产品。 以这种方式制成的基板在晶片曝光时表现出良好的表面平坦度。 当从由这种基板获得的坯料制成的光掩模被保持在具有真空卡盘的晶片曝光系统的掩模台上时，基板表面经历最小的翘曲，使得几何形状的曝光图案能够被写入晶片到良好的位置， 线宽精度。

公开(公告)号：US20080042068A1

公开(公告)日：2008-02-21

申请号：US11896447

申请日：2007-08-31

申请人： Hisashi Nishinaga ,  Ikuo Hikima ,  Mitsunori Toyoda ,  Masahiro Nakagawa ,  Tsuneyuki Hagiwara ,  Yasushi Mizuno ,  Naonori Kita ,  Osamu Tanitsu ,  Nozomu Emura

发明人： Hisashi Nishinaga ,  Ikuo Hikima ,  Mitsunori Toyoda ,  Masahiro Nakagawa ,  Tsuneyuki Hagiwara ,  Yasushi Mizuno ,  Naonori Kita ,  Osamu Tanitsu ,  Nozomu Emura

IPC分类号： G01T1/24

CPC分类号： G03F7/7015 ,  G03F7/70058 ,  G03F7/70341 ,  G03F7/706 ,  G03F7/7085

摘要： A sensor is used at a substrate level in a lithographic projection apparatus having a projection system with a numeric aperture that is greater than 1 and is configured to project a patterned radiation beam onto a target portion of a substrate The sensor includes a radiation-detector; a transmissive plate having a front surface and a back surface, the transmissive plate being positioned such that radiation projected by the projection system passes into the front surface of the transmissive plate and out of the back surface thereof to the radiation detector; and a luminescent layer provided on the back surface of the transmissive plate, the luminescent layer absorbing the radiation and emitting luminescent radiation of a different wavelength, wherein the back surface is rough.

摘要翻译： 在具有数值孔径大于1的投影系统的光刻投影设备中使用传感器，并且被配置为将图案化的辐射束投影到基板的目标部分上。传感器包括辐射检测器; 具有前表面和后表面的透射板，所述透射板被定位成使得由所述投影系统投影的辐射进入所述透射板的前表面并且从其背表面延伸到所述辐射探测器; 以及设置在所述透射板的背面上的发光层，所述发光层吸收所述辐射并发射不同波长的发光辐射，其中所述背面粗糙。

公开(公告)号：US07329475B2

公开(公告)日：2008-02-12

申请号：US10896968

申请日：2004-07-23

申请人： Masayuki Nakatsu ,  Tsuneo Numanami ,  Masayuki Mogi ,  Masamitsu Itoh ,  Tsuneyuki Hagiwara ,  Naoto Kondo

发明人： Masayuki Nakatsu ,  Tsuneo Numanami ,  Masayuki Mogi ,  Masamitsu Itoh ,  Tsuneyuki Hagiwara ,  Naoto Kondo

IPC分类号： G03F1/00

CPC分类号： G03F1/60

摘要： Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions is measured at intervals of 0.05-0.35 mm in horizontal and vertical directions, and a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is νoτ μoρε τηαν 0.5 μm is selected.

摘要翻译： 假设一对条状区域沿着要形成掩模图案的基板的顶表面的外周的一对相对侧的每一个内部从2mm延伸到10mm，具有2mm的边缘 在其长度方向上的每一端排除的部分，在水平和垂直方向上以0.05-0.35mm的间隔测量从衬底顶表面上的带状区域到条状区域的最小二乘平面的高度， 并且选择其中所有测量点中的高度的最大值和最小值之间的差值为0.5微米的磷酸三钙的基底。

公开(公告)号：US20070177126A1

公开(公告)日：2007-08-02

申请号：US11710410

申请日：2007-02-26

申请人： Tadahito Fujisawa ,  Soichi Inoue ,  Makoto Kobayashi ,  Masashi Ichikawa ,  Tsuneyuki Hagiwara ,  Kenichi Kodama

发明人： Tadahito Fujisawa ,  Soichi Inoue ,  Makoto Kobayashi ,  Masashi Ichikawa ,  Tsuneyuki Hagiwara ,  Kenichi Kodama

IPC分类号： G03B27/58

CPC分类号： G01B21/30 ,  G01B11/306 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness in the wafer surface is acquired.

公开(公告)号：US5798831A

公开(公告)日：1998-08-25

申请号：US904890

申请日：1997-08-04

申请人： Tsuneyuki Hagiwara

发明人： Tsuneyuki Hagiwara

IPC分类号： G01N21/94 ,  G02B27/42

CPC分类号： G01N21/94

摘要： A defect inspecting apparatus and a defect inspecting method are provided to conduct discriminating detection of minute circuit patterns and foreign particles as well as to detect defectives on the surface of a substrate with a high precision. The beams from a laser light source are converged by a lens to be incident upon an inspecting point. The light emitted from the inspecting point by the incident beam is detected by a photoreceiver. On the light receiving surface of the photoreceiver, a plurality of light receiving areas are provided. Each of the light receiving areas has longitudinal direction and shorter direction on its positively projected view. The arrangement of the light receiving areas is selected in accordance with the arrangement information of the patterns formed on the substrate. The foreign particles and the patterns are distinguished by obtaining the logical product of the output signals from the selected light receiving area.

摘要翻译： 提供缺陷检查装置和缺陷检查方法以进行微小电路图案和异物的鉴别检测，以及以高精度检测基板表面上的缺陷。 来自激光光源的光束由透镜会聚以入射到检查点。 由入射光束从检查点发射的光由光接收器检测。 在光接收器的光接收表面上设置有多个光接收区域。 每个光接收区域在其正投影视图上具有纵向方向和较短方向。 根据形成在基板上的图案的配置信息来选择光接收区域的布置。 通过获得来自所选择的光接收区域的输出信号的逻辑积来区分外来粒子和图案。

公开(公告)号：US5623340A

公开(公告)日：1997-04-22

申请号：US391602

申请日：1995-02-21

申请人： Kenji Yamamoto ,  Fuminori Hayano ,  Tsuneyuki Hagiwara ,  Hideyuki Tashiro

发明人： Kenji Yamamoto ,  Fuminori Hayano ,  Tsuneyuki Hagiwara ,  Hideyuki Tashiro

IPC分类号： G01N21/88 ,  G01N21/94 ,  G01N21/956 ,  G06T1/00

CPC分类号： G01N21/8806

摘要： A foreign particle inspection apparatus, for detecting a foreign particle on a reticle or the like includes an illumination system for irradiating an inspection area on a specimen with inspecting light, and plural light-receiving systems adapted to condense the scattered light from a foreign particle in the inspection area and having respective light-receiving areas on the specimen, each smaller than the inspection area. Each of the light-receiving areas of the plural light-receiving systems overlaps partially with at least one of the other light-receiving areas. The plural light-receiving systems are so arranged that any point in the inspection area is covered by the light-receiving areas of at least two of the plural light-receiving systems. A foreign particle in the inspection area is detected by a detection system, based on the lights condensed by the plural light receiving systems.

摘要翻译： 用于检测掩模版等上的异物的异物检查装置包括：用于用检查光照射检体的检查区域的照明系统，以及适于将来自异物的散射光聚集的多个受光系统 检查区域，并且在样本上具有各自小于检查区域的各个光接收区域。 多个光接收系统的每个光接收区域与其它光接收区域中的至少一个部分地重叠。 多个光接收系统被布置成使得检查区域中的任何点都被多个光接收系统中的至少两个的光接收区域覆盖。 基于由多个光接收系统会聚的光，由检测系统检测检查区域中的异物。

公开(公告)号：US20070263182A1

公开(公告)日：2007-11-15

申请号：US11660209

申请日：2005-08-17

申请人： Katsushi Nakano ,  Tsuneyuki Hagiwara

发明人： Katsushi Nakano ,  Tsuneyuki Hagiwara

IPC分类号： G03B27/42

CPC分类号： G03F7/7085 ,  G03F7/70341

摘要： Provided is an exposure apparatus that is able to prevent liquid from on a measuring part. An exposure apparatus comprises a measuring system (60), which has a first pattern (61) formed on the upper surface of a substrate stage, and a second area (S2) specified on the upper surface in the vicinity of a first area (S1), which includes the first pattern (61), and a second pattern (80) is formed in the second area (S2) so that the liquid (LQ) that has remained so as to span the first area (S1) and the second area (S2) retreats from the first area (S1) and collects in the second area (S2).

摘要翻译： 提供能够防止测量部件上的液体的曝光装置。 曝光装置包括测量系统（60），其具有形成在基板台的上表面上的第一图案（61）和在第一区域附近的上表面上指定的第二区域（S 2） S 1），其包括第一图案（61），并且在第二区域（S 2）中形成第二图案（80），使得保留以跨越第一区域（S1）的液体（LQ） ）和第二区域（S 2）从第一区域（S 1）退回并收集在第二区域（S 2）中。

公开(公告)号：US06992751B2

公开(公告)日：2006-01-31

申请号：US10351721

申请日：2003-01-27

申请人： Shinichi Okita ,  Tsuneyuki Hagiwara

发明人： Shinichi Okita ,  Tsuneyuki Hagiwara

IPC分类号： G03B27/42

CPC分类号： G03F7/70691 ,  G03F7/70358 ,  G03F9/7011 ,  G03F9/7026

摘要： A scanning exposure apparatus which promptly analyzes a cause for a variation in exposure line width. The scanning exposure apparatus includes a mask stage on which a mask is placed, a wafer stage on which a wafer is placed, a focusing mechanism which detects surface position information of the wafer and adjustment means which adjusts the surface position of the wafer. Control means acquires pose information of the wafer adjusted by the adjustment means at the time of exposure and stores the pose information in a memory in association with preacquired surface shape information of an exposure area. A state in which the exposed surface of the wafer has been exposed with respect to exposure light is known from the pose information and the surface shape information.