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    Network management system
    1.
    发明授权
    Network management system 失效
    网络管理系统

    公开(公告)号：US5513343A

    公开(公告)日：1996-04-30

    申请号：US217703

    申请日：1994-03-25

    申请人： Hiroshi Sakano ,  Hiroshi Naruse ,  Akihiko Masubuchi ,  Ikuko Tachibana

    发明人： Hiroshi Sakano ,  Hiroshi Naruse ,  Akihiko Masubuchi ,  Ikuko Tachibana

    IPC分类号： G06F13/00 ,  G06F11/25 ,  G06F11/32 ,  H04L12/24 ,  H04L29/14 ,  G06F11/00

    CPC分类号： H04L41/16 ,  G06F11/2257 ,  G06F11/327 ,  H04L41/0631 ,  H04L41/0686

    摘要： The present invention relates to a network management system, and more particularly to a network management system for managing the states of plural alarm information generating from each one of the objects, which are to be managed, and stored in a state management area.Detailed information storage program of agents stores into detailed information files detailed information contained in alarm information transmitted from objects; alarm information coding program of a manager converts alarm information into alarm codes; and state management program stores the alarm codes into a state management area. A knowledge base enters combinations of alarm codes and effects of alarm information as decision patterns, and failure decision program decides upon failures by matching, at the time of receiving alarm information, the knowledge base and the state management area with each other.

    摘要翻译： 网络管理系统技术领域本发明涉及一种网络管理系统，更具体地说，涉及一种网络管理系统，用于管理从待管理的每个对象生成的多个报警信息的状态，并存储在状态管理区域中。 代理商的详细信息存储程序存储到详细信息文件中，包含在从对象传输的报警信息中的详细信息; 管理员的报警信息编码程序将报警信息转换为报警代码; 状态管理程序将报警代码存储到状态管理区域。 知识库将报警代码和报警信息的效果组合作为决策模式，故障决策程序通过匹配，在接收到报警信息时知识库和状态管理区域进行匹配来决定故障。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20100140719A1

    公开(公告)日：2010-06-10

    申请号：US12563247

    申请日：2009-09-21

    申请人： Hiroyuki YAMASAKI ,  Kenji Kojima ,  Hiroshi Naruse ,  Hideaki Harakawa

    发明人： Hiroyuki YAMASAKI ,  Kenji Kojima ,  Hiroshi Naruse ,  Hideaki Harakawa

    IPC分类号： H01L27/06 ,  H01L21/28

    CPC分类号： H01L29/7833 ,  H01L21/823807 ,  H01L27/0629 ,  H01L28/20 ,  H01L29/4966 ,  H01L29/518

    摘要： A semiconductor device includes a substrate which includes an element region and an isolation region, a transistor portion which includes a gate insulating film formed on the element region, and a gate electrode having a metal film formed on the gate insulating film and a first semiconductor film formed on the metal film, and a resistance element portion which includes a second semiconductor film formed above the substrate and formed of the same material as that of the first semiconductor film, and a cavity formed between the substrate and the second semiconductor film.

    摘要翻译： 半导体器件包括：衬底，其包括元件区域和隔离区域;晶体管部分，其包括形成在元件区域上的栅极绝缘膜;以及栅电极，具有形成在栅极绝缘膜上的金属膜和第一半导体膜 形成在所述金属膜上的电阻元件部分，以及电阻元件部分，其包括在所述基板上形成并由与所述第一半导体膜相同的材料形成的第二半导体膜，以及形成在所述基板和所述第二半导体膜之间的空腔。

    Polymerizable compound and use thereof
    3.
    发明申请
    Polymerizable compound and use thereof 有权
    可聚合化合物及其用途

    公开(公告)号：US20070191615A1

    公开(公告)日：2007-08-16

    申请号：US10594497

    申请日：2005-03-31

    申请人： Atsuo Otsuji ,  Hiroshi Naruse ,  Mitsuo Nakamura

    发明人： Atsuo Otsuji ,  Hiroshi Naruse ,  Mitsuo Nakamura

    IPC分类号： C07D327/00

    CPC分类号： C08G75/06 ,  G02B1/04

    摘要： The present invention is to provide a polymerizable compound which can be a raw material for a resin having high transparency, good heat resistance and mechanical strength required for optical components such as plastic lenses and the like, while attaining a high refractive index (nd) exceeding 1.7, and an optical component composed of such a resin. Disclosed is a compound represented by the general formula (3), wherein, in the formula, M represents a metal atom; X1 and X2 each independently represent a sulfur atom or an oxygen atom; R1 represents a divalent organic group; m represents an integer of 0 or 1 or more; p represents an integer of from 1 to n; q represents an integer of from 1 to (n-p); n represents a valence of a metal atom M; Yq each independently represent an inorganic or organic residue; and when q is 2 or more, Yq may be bonded to one another for forming a ring structure with the intermediary of a metal atom M.

    摘要翻译： 本发明提供一种聚合性化合物，其可以成为具有高透明度，高耐热性和塑料透镜等的光学部件所需的机械强度的树脂的原料，同时获得高折射率（nd） 1.7，以及由这种树脂构成的光学部件。 公开了由通式（3）表示的化合物，其中在式中，M表示金属原子; X 1和X 2各自独立地表示硫原子或氧原子; R 1表示二价有机基团; m表示0或1以上的整数， p表示1〜n的整数， q表示1〜（n-p）的整数。 n表示金属原子M的化合价; Yq各自独立地表示无机或有机残基; 当q为2以上时，可以将Yq彼此结合形成具有金属原子M的中间环状结构。

    Aqueous ink and process for producing dye
    4.
    发明授权
    Aqueous ink and process for producing dye 失效
    水性油墨和生产染料的方法

    公开(公告)号：US06758890B2

    公开(公告)日：2004-07-06

    申请号：US10088352

    申请日：2002-03-15

    申请人： Yoriaki Matsuzaki ,  Kenichi Fujii ,  Osamu Kohgo ,  Hiroshi Naruse ,  Tsutami Misawa

    发明人： Yoriaki Matsuzaki ,  Kenichi Fujii ,  Osamu Kohgo ,  Hiroshi Naruse ,  Tsutami Misawa

    IPC分类号： C09D1102

    CPC分类号： C09D11/328 ,  C09B43/16 ,  C09B62/043 ,  C09B62/08

    摘要： Aqueous ink for ink jet recording comprising a coloring matter and an aqueous medium, in which at least one of dyes represented by the formula (A) or a salt thereof is contained as the coloring matter wherein R1 and R3, independently from each other, represent a hydrogen atom, an optionally substituted alkyl group, an optionally substituted alkoxy group, an amino group, a hydroxyl group or a halogen atom, R2 and R4, independently from each other, represent a hydrogen atom, an optionally substituted alkyl group, an optionally substituted aryl group or an aralkyl group, A represents an optionally substituted phenyl group or naphthyl group, X represents a divalent bonding group free from a saturated carbon ring, and m and n, independently from each other, represent an integer of 1 to 4.

    摘要翻译： 用于喷墨记录的水性油墨包括着色剂和水性介质，其中含有至少一种由式（A）表示的染料或其盐作为着色剂，其中R1和R3彼此独立地表示 氢原子，任选取代的烷基，任选取代的烷氧基，氨基，羟基或卤素原子，R 2和R 4彼此独立地表示氢原子，任选取代的烷基，任选取代的 芳基或芳烷基，A表示任选取代的苯基或萘基，X表示不含饱和碳环的二价键合基​​团，m和n彼此独立地表示1〜4的整数。

    Process of manufacturing a semiconductor device
    5.
    发明授权
    Process of manufacturing a semiconductor device 失效
    制造半导体器件的工艺

    公开(公告)号：US5665616A

    公开(公告)日：1997-09-09

    申请号：US731012

    申请日：1996-10-09

    申请人： Koji Kimura ,  Hiroshi Naruse

    发明人： Koji Kimura ,  Hiroshi Naruse

    IPC分类号： H01L21/331 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732 ,  H01L21/265

    CPC分类号： H01L27/0623 ,  H01L21/8249

    摘要： In the Bi-CMOS process of manufacturing a semiconductor device by an effective combination of a bipolar transistor manufacturing process and a CMOS transistor manufacturing process in the case of the formation of a silicide film on a Bi-CMOS device, in which the bipolar transistor having an inner base region made of a silicon film grown by epitaxy and the MOS transistor having silicide formed on the gate electrode, source region and drain region in a self-aligned manner therewith are formed on the same semiconductor substrate, while the silicon film of the inner base region is epitaxially grown in a step, a silicon film is also epitaxially grown on the source/drain regions at the same time in the same step.

    摘要翻译： 在双极晶体管制造工艺和CMOS晶体管制造工艺的有效组合的Bi-CMOS工艺中，在Bi-CMOS器件上形成硅化物膜的情况下，其中双极晶体管具有 通过外延生长的硅膜制成的内基区域和在其自对准方式上形成在栅电极，源区和漏区上的具有硅化物的MOS晶体管形成在同一半导体衬底上，而硅膜 内部基极区域在步骤中外延生长，在同一步骤中同时在源极/漏极区域上外延生长硅膜。

    Method of manufacturing a hetero bipolar transistor
    7.
    发明授权
    Method of manufacturing a hetero bipolar transistor 失效
    异质双极晶体管的制造方法

    公开(公告)号：US5399511A

    公开(公告)日：1995-03-21

    申请号：US280199

    申请日：1994-07-25

    申请人： Shin-ichi Taka ,  Kouji Kimura ,  Hiroshi Naruse ,  Kuniaki Kumamaru

    发明人： Shin-ichi Taka ,  Kouji Kimura ,  Hiroshi Naruse ,  Kuniaki Kumamaru

    IPC分类号： H01L29/165 ,  H01L21/331 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L21/265

    CPC分类号： H01L29/66242 ,  H01L29/7378

    摘要： The specification discloses a hetero bipolar transistor which comprises a semiconductor substrate, a first silicon layer serving as a collector, a first silicon-germanium layer serving as a base, a second silicon layer serving as a collector, and a second silicon-germanium layer. A side wall of the second silicon-germanium layer is in contact with side walls of the first silicon layer, the first silicon-germanium layer and the second silicon layer. The second silicon-germanium layer is disposed to surround the first silicon layer, the first silicon-germanium layer, and the second silicon layer, and has an energy band gap substantially the same as that of the first silicon-germanium layer.

    摘要翻译： 该说明书公开了一种异质双极晶体管，其包括半导体衬底，用作集电极的第一硅层，用作基极的第一硅 - 锗层，用作集电极的第二硅层和第二硅 - 锗层。 第二硅 - 锗层的侧壁与第一硅层，第一硅 - 锗层和第二硅层的侧壁接触。 第二硅锗层被设置为围绕第一硅层，第一硅 - 锗层和第二硅层，并且具有与第一硅 - 锗层基本相同的能带隙。

    Flotation process for copper ores and copper smelter slags
    8.
    发明授权
    Flotation process for copper ores and copper smelter slags 失效
    铜矿和铜冶炼炉渣浮选工艺

    公开(公告)号：US4022686A

    公开(公告)日：1977-05-10

    申请号：US659965

    申请日：1976-02-20

    申请人： Akira Arakatsu ,  Hajime Nakazawa ,  Hiroshi Naruse

    发明人： Akira Arakatsu ,  Hajime Nakazawa ,  Hiroshi Naruse

    IPC分类号： B03D1/004 ,  B03D1/02 ,  C11D1/02 ,  C11D1/58 ,  C11D1/65 ,  C11D1/66 ,  C11D1/835 ,  B03D1/06

    CPC分类号： B03D1/014 ,  B03D1/006 ,  B03D1/012 ,  B03D2201/02 ,  B03D2203/02

    摘要： A flotation process in which copper ores or copper converter slags are ground and firstly have added thereto benzotriazole or alkyl benzotriazole as an activator and secondly one or more collectors selected from the group consisting of xanthates, dithiophosphates, thiocarbamate esters, dithiocarbamates, mercaptans and dixanthogens and further, if desired, a promoter such as kerosene, light oil, bunker oil or petroleum lubricant is added to improve the recovery for the flotation of copper ores or copper smelter slags.

    摘要翻译： 一种浮选方法，其中将铜矿石或铜转炉炉渣研磨并首先加入苯并三唑或烷基苯并三唑作为活化剂，其次是一种或多种选自黄原酸盐，二硫代磷酸盐，硫代氨基甲酸酯，二硫代氨基甲酸盐，硫醇和二恶烷的收集剂，以及 此外，如果需要，加入促进剂如煤油，轻油，燃油或石油润滑剂以改善铜矿石或铜冶炼炉渣的浮选回收。