摘要:
A developing apparatus includes a developer bearing member for bearing and carrying developer to a developing area. A developer is borne on the developer bearing member, wherein the developer has a weight average particle size not exceeding 6.5 &mgr;m and contains an external additive of a charging polarity opposite to that of the developer. A voltage application device applies a voltage to the developer bearing member, wherein the voltage including at least a first voltage V1 for acting on the developer in a direction from the developer bearing member toward an image bearing member and a second voltage V2 for acting on the developer in a direction from an image bearing member toward said developer bearing member, and a charged potential VL of the image bearing member, a latent image potential VD a distance H between the developer bearing member and an image bearing member, and wherein the voltages V1 and V2 satisfy a following relationships: |V1−VL|/H≦3.7×10−6 V/m; and |V2−VD|/H≦2.9×10−6 V/m.
摘要:
The present invention relates to a development density adjusting method in which development density is adjusted by varying ratio of application time of a voltage having the first voltage value to application time of a voltage having the second voltage value in one period, and difference between a potential of the developer bearing member and a potential of the electrostatic latent image, when the voltage having the first voltage value is applied to the developer bearing member.
摘要:
The present invention relates to an image forming apparatus in which an electrostatic latent image is formed on an electrophotographic photosensitive member with digital light, and electrostatically developed with a developer to form a developed image. The apparatus has an exposure device for normally increasing the reflection density only in a specified region on the photosensitive member in a white image portion where no image is basically formed, in the horizontal scanning direction of the digital light. For example, a small amount of developer is supplied to either end of the photosensitive member having the tendency that the amount of the developer supplied is small, thereby preventing the occurrence of image flow at either end.
摘要:
A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film having a film thickness periodically and continuously changing in a channel width direction of the non-volatile memory cell, a floating gate electrode provided on the tunnel insulating film, a control gate electrode provided above the floating gate electrode, and an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.
摘要:
A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed on the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 μm; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined to be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.
摘要:
A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed on the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 μm; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined to be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.
摘要:
A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed on the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 &mgr;m; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined to be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.
摘要:
A MOS type semiconductor device has a gate whose length is 170 nm (0.17 .mu.m) or less, a junction depth of source and drain diffusion layers in the vicinity of a channel is 22 nm or less, and a concentration of impurities at the surface in the source and drain diffusion layers is made to 10.sup.20 cm.sup.-3 or more. Such structure is obtained using solid phase diffusion using heat range from 950.degree. C. to 1050.degree. C. and/or narrowing gate width by ashing or etching. The other MOS type semiconductor device is characterized in that the relationship between the junction depth x.sub.j �nm! in the source and drain diffusion layer regions and the effective channel length L.sub.eff �nm! is determined by L.sub.eff >0.69 x.sub.j -6.17.
摘要:
An image forming apparatus includes an image bearing member; a charging member for charging the image bearing member; an image forming device for forming an image on the image bearing member; and an impedance circuit between the charging member and a voltage source for supplying electric power to the charging member, the impedance circuit having an impedance which is peculiar to individual image forming apparatus in accordance with an impedance of the charging member.
摘要:
A charging device for charging a moving member to be charged includes charging device for being contacted to the member to be charged to charge the member; a voltage source for applying a vibratory voltage to the charging device; wherein the charging device includes a first layer contactable to the member to be charged, a second layer adjacent thereto wherein the first layer is a dielectric layer having a volume resistivity larger than that of the second layer.