公开(公告)号：US5200638A

公开(公告)日：1993-04-06

申请号：US547243

申请日：1990-07-03

申请人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

发明人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/336 ,  H01L21/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/732 ,  H01L29/735 ,  H01L29/739 ,  H01L29/745 ,  H01L29/78 ,  H01L29/861

CPC分类号： H01L29/404 ,  H01L29/66681 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7455 ,  H01L29/7826 ,  H01L29/8611

摘要： On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.31 epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.

公开(公告)号：US5100814A

公开(公告)日：1992-03-31

申请号：US628007

申请日：1990-12-17

申请人： Hiroshi Yamaguchi ,  Masao Yoshizawa ,  Kazumasa Satsuma ,  Takeshi Kida ,  Tomohide Terashima

发明人： Hiroshi Yamaguchi ,  Masao Yoshizawa ,  Kazumasa Satsuma ,  Takeshi Kida ,  Tomohide Terashima

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/74 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732 ,  H01L29/78

CPC分类号： H01L21/76297 ,  H01L27/0623 ,  Y10S148/135

摘要： First and second semiconductor elements are formed in first and second semiconductor element forming regions which have the same thickness, include first and second semiconductor layers and are separated with dielectric isolation from each other. The thickness of the first semiconductor layer is made different between the first and second semiconductor element forming regions, so that the thickness of the second semiconductor layer becomes different between the first and second semiconductor element forming regions. Thus, the semiconductor device may have the semiconductor elements which have second semiconductor layers with different thicknesses in accordance with desired electrical characteristics for each of the semiconductor elements formed in the first and second semiconductor element forming regions, to complement a semiconductor device having the semiconductor elements each of which has independent optimum electrical characteristics.

摘要翻译： 第一和第二半导体元件形成在具有相同厚度的第一和第二半导体元件形成区域中，包括第一和第二半导体层并且彼此隔开隔离。 在第一和第二半导体元件形成区域之间使第一半导体层的厚度不同，使得第一半导体元件形成区域和第二半导体元件形成区域之间的第二半导体层的厚度变得不同。 因此，半导体器件可以具有根据形成在第一和第二半导体元件形成区域中的每个半导体元件的所需电特性而具有不同厚度的第二半导体层的半导体元件，以补充具有半导体元件的半导体器件 每个都具有独立的最佳电气特性。

公开(公告)号：US5279977A

公开(公告)日：1994-01-18

申请号：US997924

申请日：1992-12-29

申请人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

发明人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/336 ,  H01L21/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/732 ,  H01L29/735 ,  H01L29/739 ,  H01L29/745 ,  H01L29/78 ,  H01L29/861 ,  H01L21/265

CPC分类号： H01L29/404 ,  H01L29/66681 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7455 ,  H01L29/7826 ,  H01L29/8611

摘要： On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.- epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.

摘要翻译： 在p-衬底上，n型外延层由p阱包围和隔离。 在n外延层的表面中，在p阱附近提供p浮置区，在其上设置感测电极。 绝缘膜和导电膜形成在p阱和p浮动区之间的n外延层上以重叠。 导电膜和p浮动区域用作复合场板，这使得表面电场分布受表面电荷状态的影响很困难，通过扩展耗尽层来减轻表面电场，延伸 从n-外延层和p阱之间的pn结到电流阻挡状态的n-外延层朝向n-外延层的中心。 p浮动区域的电位由电流阻塞状态下的电容耦合决定，因此通过感测电极的感测电压特性可以是平滑的。

公开(公告)号：US5258641A

公开(公告)日：1993-11-02

申请号：US944074

申请日：1992-09-11

申请人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

发明人： Takeshi Kida ,  Kazumasa Satsuma ,  Gourab Majumdar ,  Tomohide Terashima ,  Hiroshi Yamaguchi ,  Masanori Fukunaga ,  Masao Yoshizawa

IPC分类号： H01L21/336 ,  H01L29/06 ,  H01L29/40 ,  H01L29/735 ,  H01L29/739 ,  H01L29/745 ,  H01L29/78 ,  H01L29/861 ,  H01L29/68

CPC分类号： H01L29/404 ,  H01L29/66681 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7455 ,  H01L29/7826 ,  H01L29/8611

摘要： On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.- epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.

摘要翻译： 在p-衬底上，n型外延层由p阱包围和隔离。 在n外延层的表面中，在p阱附近提供p浮置区，在其上设置感测电极。 绝缘膜和导电膜形成在p阱和p浮动区之间的n外延层上以重叠。 导电膜和p浮动区域用作复合场板，这使得表面电场分布受表面电荷状态的影响很困难，通过扩展耗尽层来减轻表面电场，延伸 从n-外延层和p阱之间的pn结到电流阻挡状态的n-外延层朝向n-外延层的中心。 p浮动区域的电位由电流阻塞状态下的电容耦合决定，因此通过感测电极的感测电压特性可以是平滑的。

公开(公告)号：US08383742B2

公开(公告)日：2013-02-26

申请号：US13170393

申请日：2011-06-28

申请人： Takeshi Iizuka ,  Hirokazu Kamioka ,  Takeshi Kida

发明人： Takeshi Iizuka ,  Hirokazu Kamioka ,  Takeshi Kida

IPC分类号： C08F2/00 ,  C08F12/20 ,  C08F14/18 ,  C08F114/18 ,  C08F214/18

CPC分类号： C08K5/0025 ,  C08K5/01 ,  C08K5/02 ,  C08K5/3415 ,  C08L27/12 ,  C08L27/18 ,  C08L2205/02 ,  C08L2205/22

摘要： The present application relates to a rubber composition containing a fluororubber, a radical initiator having a 1-minute half-life temperature of 280° C. or higher, and a crosslinking assistant having a melting point of 200° C. or higher and having two or more double bonds between carbon atoms; and a thermoplastic resin composition containing a fluororesin and the rubber composition.

摘要翻译： 本申请涉及含有氟橡胶，1分钟半衰期为280℃以上的自由基引发剂和熔点为200℃以上且具有两个以上的熔点的交联助剂的橡胶组合物 或更多的碳原子之间的双键; 和含有氟树脂和橡胶组合物的热塑性树脂组合物。

公开(公告)号：US20080080966A1

公开(公告)日：2008-04-03

申请号：US11905365

申请日：2007-09-28

申请人： Hiroshi Ueno ,  Toshihiko Shiraki ,  Akio Oshima ,  Tomonori Nakashita ,  Masaaki Ohtsuki ,  Shigenori Bando ,  Masaki Abe ,  Ryuji Nakata ,  Takeshi Kida

发明人： Hiroshi Ueno ,  Toshihiko Shiraki ,  Akio Oshima ,  Tomonori Nakashita ,  Masaaki Ohtsuki ,  Shigenori Bando ,  Masaki Abe ,  Ryuji Nakata ,  Takeshi Kida

IPC分类号： F01D11/00 ,  F01D25/08 ,  F04D29/04

CPC分类号： F02B39/00 ,  F01D25/16 ,  F02B37/00 ,  F05D2220/40 ,  F05D2250/231 ,  F05D2300/5024 ,  F16C19/548 ,  F16C19/55 ,  F16C2360/24 ,  Y02T10/144

摘要： A turbocharger includes a turbine wheel having a center hole and a turbine shaft having one end secured on a small-diameter inner circumferential surface of the center hole. A large-diameter inner circumferential surface and a large diameter outer circumferential surface are formed to provide a cylindrical clearance opening toward a bearing housing between the center hole and the outer circumferential surface of the turbine shaft.

摘要翻译： 涡轮增压器包括具有中心孔的涡轮机叶轮和具有固定在中心孔的小直径内圆周表面上的一端的涡轮轴。 形成大直径的内周面和大径的外周面，以在中心孔和涡轮轴的外周面之间朝向轴承壳体提供圆柱形间隙。

公开(公告)号：US20120010369A1

公开(公告)日：2012-01-12

申请号：US13170393

申请日：2011-06-28

申请人： Takeshi Iizuka ,  Hirokazu Kamioka ,  Takeshi Kida

发明人： Takeshi Iizuka ,  Hirokazu Kamioka ,  Takeshi Kida

IPC分类号： C08L27/24 ,  C08L15/02

CPC分类号： C08K5/0025 ,  C08K5/01 ,  C08K5/02 ,  C08K5/3415 ,  C08L27/12 ,  C08L27/18 ,  C08L2205/02 ,  C08L2205/22

摘要： The present application relates to a rubber composition containing a fluororubber, a radical initiator having a 1-minute half-life temperature of 280° C. or higher, and a crosslinking assistant having a melting point of 200° C. or higher and having two or more double bonds between carbon atoms; and a thermoplastic resin composition containing a fluororesin and the rubber composition.

摘要翻译： 本申请涉及含有氟橡胶，1分钟半衰期为280℃以上的自由基引发剂和熔点为200℃以上且具有两个以上的熔点的交联助剂的橡胶组合物 或更多的碳原子之间的双键; 和含有氟树脂和橡胶组合物的热塑性树脂组合物。

公开(公告)号：US5109266A

公开(公告)日：1992-04-28

申请号：US650569

申请日：1991-02-05

申请人： Takeshi Kida ,  Goro Mitarai

发明人： Takeshi Kida ,  Goro Mitarai

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/76 ,  H01L29/06 ,  H01L29/40 ,  H01L29/41 ,  H01L29/732 ,  H01L29/78 ,  H01L29/861

CPC分类号： H01L29/402 ,  H01L29/7813

摘要： A semiconductor integrated circuit device according to the present invention has a field plate disposed between the element isolation region which surrounds a semiconductor active element and an electrode wiring which is disposed to traverse the element isolation region while being electrically connected with the semiconductor active element, and a predetermined voltage is applied to the field plate. Accordingly, a concentration of the electric field is relieved not only at the boundary region between the element isolating region and the surface of the semiconductor active element which the electrode wiring traverses, but also at the surface of the semiconductor active element under the edge of the field plate, which eventually makes it possible to raise the breakdown-voltage of the semiconductor integrated circuit device.

摘要翻译： 根据本发明的半导体集成电路器件具有设置在元件隔离区域之间的场板，该区域围绕半导体有源元件和与半导体有源元件电连接而被设置为穿过元件隔离区域的电极布线;以及 向场板施加预定的电压。 因此，不仅在元件隔离区域和电极布线横越的半导体有源元件的表面之间的边界区域，而且在半导体有源元件的边缘部分 场板，其最终可以提高半导体集成电路器件的击穿电压。