公开(公告)号：US5808310A

公开(公告)日：1998-09-15

申请号：US680643

申请日：1996-07-17

申请人： Hiroshi Yamashita ,  Takao Tamura ,  Hiroshi Nozue

发明人： Hiroshi Yamashita ,  Takao Tamura ,  Hiroshi Nozue

IPC分类号： G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01J37/30

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31769

摘要： Disclosed herein is a method of electron beam cell projection lithography, employing an electron beam which is shaped by a first aperture having a first opening and a second aperture having a plurality of second openings. The shaped electron beam is irradiated on a sample surface to expose plurality of patterns on the sample surface, wherein an exposure dose is determined according to an exposure intensity distribution function, thereby correcting a proximity effect, while the exposure dose is also controlled to correct for a beam blur induced by a Coulomb interaction effect. The exposure intensity distribution function includes a term for correcting the Coulomb interaction effect.

摘要翻译： 本文公开了一种电子束电池投影光刻的方法，其采用电子束，该电子束由具有第一开口的第一孔和具有多个第二开口的第二孔形成。 将成形的电子束照射在样品表面上以暴露样品表面上的多个图案，其中根据曝光强度分布函数确定曝光剂量，从而校正邻近效应，同时还控制曝光剂量以校正 由库仑相互作用影响引起的光束模糊。 曝光强度分布函数包括用于校正库仑相互作用效应的项。

公开(公告)号：US6042971A

公开(公告)日：2000-03-28

申请号：US006503

申请日：1998-01-14

申请人： Takao Tamura ,  Hiroshi Yamashita ,  Ken Nakajima ,  Hiroshi Nozue

发明人： Takao Tamura ,  Hiroshi Yamashita ,  Ken Nakajima ,  Hiroshi Nozue

IPC分类号： G03F1/20 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/20

摘要： The present invention consists in a method of creating an EB mask for electron beam image drawing, comprising: a step of extracting patterns for forming on an EB mask from design data stored in means for storage; a step of calculating an aperture area of an aperture section requested in an EB mask, using the design data contained in the extracted cell; a step of generating cell data for aperture creation using the value of this aperture area; and a step of forming a basic aperture pattern in an EB mask using this cell data for aperture creation.

摘要翻译： 本发明在于一种创建用于电子束图像绘制的EB掩模的方法，包括：从存储在存储器中的设计数据中提取用于在EB掩模上形成的图案的步骤; 使用包含在所提取的单元中的设计数据来计算EB掩模中请求的孔径区域的孔径面积的步骤; 使用该开口区域的值生成用于孔径创建的单元数据的步骤; 以及使用这种用于孔径创建的单元数据在EB掩模中形成基本孔径图案的步骤。

公开(公告)号：US06211528B1

公开(公告)日：2001-04-03

申请号：US09055755

申请日：1998-04-07

申请人： Takao Tamura

发明人： Takao Tamura

IPC分类号： H01J37302

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J2237/31764 ,  H01J2237/31776

摘要： Whether a pattern region in which a pattern is drawn in a resist is a first region to be drawn in a cell projection manner or a second region to be drawn in a variably shaped beam manner is decided. Then a first exposure dose is selected if the pattern region is the first region or a second exposure dose is selected if the pattern region is the second region. The second exposure dose is different from the first exposure dose. The pattern is drawn with the first exposure dose in the first region and with the second exposure dose in the second region respectively.

摘要翻译： 确定在抗蚀剂中绘制图案的图案区域是以单元投影方式绘制的第一区域或以可变形波束方式绘制的第二区域。 然后，如果图案区域是第一区域，则选择第一曝光剂量，如果图案区域是第二区域，则选择第二曝光剂量。 第二次接触剂量与第一次接触剂量不同。 该图案以第一区域中的第一曝光剂量和第二区域中的第二曝光剂量绘制。

公开(公告)号：US06001511A

公开(公告)日：1999-12-14

申请号：US50943

申请日：1998-03-31

申请人： Takao Tamura

发明人： Takao Tamura

IPC分类号： G03F1/20 ,  G03F7/20 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/20 ,  H01J2237/0453 ,  H01J2237/3175

摘要： An electron beam exposure mask comprises a mask body and a plurality of unit patterns each having an opening pattern iteratively formed in the mask. The mask body has a thickness profile controlled based on the opening density of the pattern in the mask area.

摘要翻译： 电子束曝光掩模包括掩模体和多个单元图案，每个单元图案在掩模中重复形成开口图案。 掩模体具有基于掩模区域中的图案的开口密度来控制的厚度分布。

公开(公告)号：US5260500A

公开(公告)日：1993-11-09

申请号：US770626

申请日：1991-10-03

申请人： Yasushi Shiraki ,  Takao Tamura

发明人： Yasushi Shiraki ,  Takao Tamura

IPC分类号： C08F10/02 ,  C07C2/30 ,  C08F4/60 ,  C08F4/649 ,  C08F10/00 ,  C07C2/02

CPC分类号： C07C2/30 ,  C07C2527/135 ,  C07C2531/02 ,  C07C2531/14 ,  C07C2531/38 ,  Y02P20/52

摘要： Disclosed herein is a process for producing a linear .alpha.-olefin by the oligomerization of ethylene, characterized in that the oligomerization is carried out in the presence of a catalyst composed of (A) titanium halide or zirconium halide, (B) an organoaluminum compound, and (C) an alcohol (methanol and/or ethanol). The linear .alpha.-olefin has an extremely high purity because it is not contaminated with the catalyst components.

公开(公告)号：US4886933A

公开(公告)日：1989-12-12

申请号：US221724

申请日：1988-07-20

申请人： Yasushi Shiraki ,  Takao Tamura

发明人： Yasushi Shiraki ,  Takao Tamura

IPC分类号： C07C2/30 ,  C07C2/36

CPC分类号： C07C2/36 ,  C07C2/30 ,  C07C2527/135 ,  C07C2531/14 ,  C07C2531/22 ,  C07C2531/26

摘要： In a method for the production of linear .alpha.-olefins by the oligomerization of ethylene in the presence of a catalyst system composed of (A) zirconium tetrachloride, (B-a) ethyl aluminum sesquichloride and (B-b) triethyl aluminum, an improvement is proposed which comprises using the catalyst system prepared in a specific procedure in which one of the essential conditions is the order of successive introduction of the three components along with the concentration of zirconium tetrachloride, temperature and length of time. It is essential that introduction of the component (B-b) is not preceded by the contacting of the components (A) and (B-a). Accoridng to the invention, the reaction product contains the species of the linear .alpha.-olefin compounds having higher usefulness than other species in a greatly increased yield.

公开(公告)号：US06787499B2

公开(公告)日：2004-09-07

申请号：US10369595

申请日：2003-02-21

申请人： Shinji Tanaka ,  Yasushi Shiraki ,  Takao Tamura ,  Masahiko Kuramoto ,  Haruhito Sato ,  Masami Watanabe

发明人： Shinji Tanaka ,  Yasushi Shiraki ,  Takao Tamura ,  Masahiko Kuramoto ,  Haruhito Sato ,  Masami Watanabe

IPC分类号： B01J3100

CPC分类号： C08F4/025 ,  B01J21/06 ,  B01J21/066 ,  B01J21/16 ,  B01J23/745 ,  B01J31/1616 ,  B01J31/1805 ,  B01J31/181 ,  B01J31/1815 ,  B01J31/22 ,  B01J31/2295 ,  B01J31/26 ,  B01J2231/20 ,  B01J2531/0244 ,  B01J2531/48 ,  B01J2531/842 ,  C07C2/32 ,  C07C2521/16 ,  C07C2531/08 ,  C07C2531/22 ,  Y02P20/52 ,  Y10S526/943

摘要： A catalyst which is able to express a high oligomerizing activity of ethylene and a method for the production of &agr;-olefin where ethylene is oligomerized using said catalyst are provided. The present invention relates to a catalyst for the production of &agr;-olefin obtained by contacting (a) clay, clay mineral or ion-exchange layer compound with (b-1) a transition metal complex of Groups 4 to 6 of the Periodic Table and also relates to a method for the production of &agr;-olefin by oligomerization of ethylene using said catalyst. The present invention further relates to a catalyst for the production of &agr;-olefin obtained by contacting (a) clay, clay mineral or ion-exchange layer compound with (b-2) a transition metal complex of Groups 8 to 10 of the Periodic Table and also relates to a method of the production of &agr;-olefin by oligomerization of ethylene using said catalyst.

摘要翻译： 提供了能够表现乙烯的高低聚活性的催化剂和使用所述催化剂使乙烯低聚的α-烯烃的制备方法。本发明涉及一种用于生产α-烯烃的催化剂，其通过接触 （a）粘土，粘土矿物或离子交换层化合物与（b-1）周期表第4至6族的过渡金属络合物，以及通过乙烯低聚制备α-烯烃的方法 所述催化剂。本发明还涉及通过使（a）粘土，粘土矿物或离子交换层化合物与（b-2）第8〜10族的过渡金属络合物接触而制备α-烯烃的催化剂。 该周期表还涉及通过使用所述催化剂使乙烯低聚制备α-烯烃的方法。

公开(公告)号：US5825034A

公开(公告)日：1998-10-20

申请号：US917293

申请日：1997-08-25

申请人： Takao Tamura

发明人： Takao Tamura

IPC分类号： G03F7/20 ,  H01J37/304 ,  H01L21/027

CPC分类号： H01J37/304 ,  H01J2237/30455 ,  H01J2237/3175

摘要： A method of compensation to an electron beam dose for exposing an electron beam through an electron dose mask to an object is provided, which comprises the steps of measuring an actual opening area of the electron dose mask, and setting an optimum dose to the electron beam dose system with reference to the measured actual opening area of the electron dose mask, thereby forming on a wafer a pattern exactly corresponding to the designed pattern even if the electron beam mask has an opening pattern differing in size from the designed pattern.

摘要翻译： 提供了一种补偿电子束剂量的方法，用于将电子束通过电子剂量掩模暴露于物体，其包括以下步骤：测量电子剂量掩模的实际开口面积，并为电子束设定最佳剂量 相对于电子剂量掩模的测量的实际开口面积，从而在晶片上形成与设计图案精确对应的图案，即使电子束掩模具有与设计图案不同的开口图案。

公开(公告)号：US6066854A

公开(公告)日：2000-05-23

申请号：US138330

申请日：1998-08-24

申请人： Takao Tamura

发明人： Takao Tamura

IPC分类号： H01L21/027 ,  H01J37/302 ,  H01J37/304

CPC分类号： H01J37/3026 ,  H01J2237/31764

摘要： A data processor compares a length of a pattern to be written into a layer sensitive to a charged particle beam with a critical length equal to the maximum length of a cross section of the charged particle beam or the maximum length of a variable sub-field to see whether or not the pattern is written through a radiation of the maximized cross section or through a radiation onto the maximized sub-field, and a main deflector and a sub-deflector guide a shot of charged particle beam to the layer if the answer is positive so that the pattern is prevented from deformation due to a low stitching accuracy.

摘要翻译： 数据处理器将要写入的图案的长度与对带电粒子束敏感的层的长度进行比较，其临界长度等于带电粒子束的横截面的最大长度或可变子场的最大长度至 看是否通过最大截面的辐射或通过辐射将图案写入到最大化的子场上，如果答案是，则主偏转器和副偏转器将带电粒子束的照射引导到层 使得图案由于缝合精度低而防止变形。

公开(公告)号：US5958636A

公开(公告)日：1999-09-28

申请号：US967157

申请日：1997-11-10

申请人： Takao Tamura

发明人： Takao Tamura

IPC分类号： H01L21/3205 ,  G03F1/00 ,  G03F7/20 ,  H01J37/302 ,  H01L21/027 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  G03F9/00

CPC分类号： G03F7/2063 ,  G03F1/26 ,  G03F1/78 ,  G03F7/2022 ,  H01J37/3026 ,  H01J2237/31764 ,  Y10S430/143

摘要： Each of two pattern scheduled areas to be formed a pattern is divided into two areas of an outer edge section and a central section surrounded by the outer edge section. Further, the outer edge section which is in contact with a space area is divided into outline portions from both end portion of the outer edge section, with a 5 .mu.m distance. An outline portion is formed at a portion of the outer edge section sandwiched by the outline portions. An outline portion is formed at a position of the outer edge section orthogonal with these outline portions. Next, a suitable exposure level to each of the divided outline portions is controlled by a controlling unit based on the intensity of electron beams. In the outer edge section in contact with the space area, the exposure levels of the electron beams at the outline portion which is far away from the outline portion positioned at the center of the outer edge section along the outer edge section are set higher than that of the outline portion which is nearer to the specified outline portion so that the energy irradiation levels of the electron beams become higher at the outline portion which is far away from the center outline portion along the outer edge section.

摘要翻译： 要形成图案的两个图案预定区域中的每一个被划分为由外边缘部分包围的外边缘部分和中心部分的两个区域。 此外，与空间区域接触的外边缘部分从外边缘部分的两端部分分成5米的距离的轮廓部分。 轮廓部分形成在由轮廓部分夹在外边缘部分的一部分上。 轮廓部形成在与这些轮廓部正交的外缘部的位置。 接下来，通过控制单元基于电子束的强度来控制对每个分割的轮廓部分的合适的曝光水平。 在与空间区域接触的外边缘部分中，沿着外边缘部分位于外边缘部分中心的轮廓部分的轮廓部分处的电子束的曝光水平被设定为高于 更靠近指定轮廓部分的轮廓部分，使得电子束的能量照射水平在沿着外边缘部分远离中心轮廓部分的轮廓部分变高。