Transition metal compound, olefin polymerization catalyst, and method of polymerizing olefin
    3.
    发明授权
    Transition metal compound, olefin polymerization catalyst, and method of polymerizing olefin 失效
    过渡金属化合物,烯烃聚合催化剂和烯烃聚合方法

    公开(公告)号:US06841693B1

    公开(公告)日:2005-01-11

    申请号:US10111419

    申请日:2000-11-10

    摘要: A transition metal compound of Groups to 10 of the Periodic Table, represented by the following formula (1): wherein M represents a transition metal of Groups 8 to 10 of the Periodic Table; L, electrically neutral, represents a hetero atom-containing hydrocarbon group represented by the following formula (2) wherein R1 to R5 each independently represent a hydrogen atom, a halogen atom, a hydrocarbon group having form 1 to 20 carbon atoms, a halogenohydrocarbon group having from 1 to 20 carbon atoms, or a hetero atom-containing group, and optionally these groups are bonded to each other to form a ring; R6 represents a hydrogen atom, a hydrocarbon group having form 1 to 40 carbon atoms, a halogenohydrocarbon group having from 1 to 40 carton atoms, or a hetero atom-containing group; L′ electrically neutral, represents a hetero atom-containing hydrocarbon group represented by the following formula (3) wherein R7 to R11 each independently represent a hydrogen atom, a halogen atom, a hydrocarbon group having from 1 to 20 carbon atoms, a halogenohydrocarbon group having from 1 to 20 carbon atoms, or a hetero atom-containing group, and optionally these groups are bonded to each other to form a ring; X represents a covalent-bonding or ionic-bonding group, and a plurality of X's are the same or different; Y represents an aromatic group-containing crosslinking group; Z is an integer of 1 or more, indicating the degree of polymerization of the compound; n indicates the atomic valency of M; and each of M, L, and Y are the same or different.

    摘要翻译: 由下式(1)表示的元素周期表中的10至10元的过渡金属化合物:其中M表示周期表第8至10族的过渡金属; L,电中性表示由下式(2)表示的含杂原子的烃基,其中R 1〜R 5各自独立地表示氢原子,卤素原子,1〜20的烃基 碳原子,具有1-20个碳原子的卤代烃基或含杂原子的基团,并且任选地这些基团彼此键合形成环; R 6表示氢原子,碳原子数1〜40的烃基,碳原子数为1〜40的卤代烃基或含杂原子的基团; L'电中性表示含杂原子的 由下式(3)表示的烃基,其中R 7至R 11各自独立地表示氢原子,卤素原子,具有1至20个碳原子的烃基,具有1至20个碳原子的卤代烃基 碳原子或含杂原子的基团,并且任选地,这些基团彼此键合形成环; X表示共价键或离子键合基团,并且多个X相同或不同; Y表示含芳基的交联基团; Z为1以上的整数,表示化合物的聚合度; n表示M的原子价; M,L,Y各自相同或不同。

    Production of linear alpha-olefins
    5.
    发明授权
    Production of linear alpha-olefins 失效
    生产线性α-烯烃

    公开(公告)号:US4886933A

    公开(公告)日:1989-12-12

    申请号:US221724

    申请日:1988-07-20

    IPC分类号: C07C2/30 C07C2/36

    摘要: In a method for the production of linear .alpha.-olefins by the oligomerization of ethylene in the presence of a catalyst system composed of (A) zirconium tetrachloride, (B-a) ethyl aluminum sesquichloride and (B-b) triethyl aluminum, an improvement is proposed which comprises using the catalyst system prepared in a specific procedure in which one of the essential conditions is the order of successive introduction of the three components along with the concentration of zirconium tetrachloride, temperature and length of time. It is essential that introduction of the component (B-b) is not preceded by the contacting of the components (A) and (B-a). Accoridng to the invention, the reaction product contains the species of the linear .alpha.-olefin compounds having higher usefulness than other species in a greatly increased yield.

    Electron beam drawing method in which cell projection manner and variably shaped beam manner are used in combination
    6.
    发明授权
    Electron beam drawing method in which cell projection manner and variably shaped beam manner are used in combination 失效
    组合使用单元投影方式和可变形波束方式的电子束绘制方法

    公开(公告)号:US06211528B1

    公开(公告)日:2001-04-03

    申请号:US09055755

    申请日:1998-04-07

    申请人: Takao Tamura

    发明人: Takao Tamura

    IPC分类号: H01J37302

    摘要: Whether a pattern region in which a pattern is drawn in a resist is a first region to be drawn in a cell projection manner or a second region to be drawn in a variably shaped beam manner is decided. Then a first exposure dose is selected if the pattern region is the first region or a second exposure dose is selected if the pattern region is the second region. The second exposure dose is different from the first exposure dose. The pattern is drawn with the first exposure dose in the first region and with the second exposure dose in the second region respectively.

    摘要翻译: 确定在抗蚀剂中绘制图案的图案区域是以单元投影方式绘制的第一区域或以可变形波束方式绘制的第二区域。 然后,如果图案区域是第一区域,则选择第一曝光剂量,如果图案区域是第二区域,则选择第二曝光剂量。 第二次接触剂量与第一次接触剂量不同。 该图案以第一区域中的第一曝光剂量和第二区域中的第二曝光剂量绘制。

    Mask for use in a projection electron beam exposure
    7.
    发明授权
    Mask for use in a projection electron beam exposure 失效
    用于投影电子束曝光的掩模

    公开(公告)号:US06001511A

    公开(公告)日:1999-12-14

    申请号:US50943

    申请日:1998-03-31

    申请人: Takao Tamura

    发明人: Takao Tamura

    摘要: An electron beam exposure mask comprises a mask body and a plurality of unit patterns each having an opening pattern iteratively formed in the mask. The mask body has a thickness profile controlled based on the opening density of the pattern in the mask area.

    摘要翻译: 电子束曝光掩模包括掩模体和多个单元图案,每个单元图案在掩模中重复形成开口图案。 掩模体具有基于掩模区域中的图案的开口密度来控制的厚度分布。

    Method of compensation for electron beam dose
    8.
    发明授权
    Method of compensation for electron beam dose 失效
    电子束剂量补偿方法

    公开(公告)号:US5825034A

    公开(公告)日:1998-10-20

    申请号:US917293

    申请日:1997-08-25

    申请人: Takao Tamura

    发明人: Takao Tamura

    摘要: A method of compensation to an electron beam dose for exposing an electron beam through an electron dose mask to an object is provided, which comprises the steps of measuring an actual opening area of the electron dose mask, and setting an optimum dose to the electron beam dose system with reference to the measured actual opening area of the electron dose mask, thereby forming on a wafer a pattern exactly corresponding to the designed pattern even if the electron beam mask has an opening pattern differing in size from the designed pattern.

    摘要翻译: 提供了一种补偿电子束剂量的方法,用于将电子束通过电子剂量掩模暴露于物体,其包括以下步骤:测量电子剂量掩模的实际开口面积,并为电子束设定最佳剂量 相对于电子剂量掩模的测量的实际开口面积,从而在晶片上形成与设计图案精确对应的图案,即使电子束掩模具有与设计图案不同的开口图案。

    Electron beam cell projection lithography method for correcting coulomb
interaction effects
    9.
    发明授权
    Electron beam cell projection lithography method for correcting coulomb interaction effects 失效
    用于校正库仑相互作用的电子束电池投影光刻方法

    公开(公告)号:US5808310A

    公开(公告)日:1998-09-15

    申请号:US680643

    申请日:1996-07-17

    摘要: Disclosed herein is a method of electron beam cell projection lithography, employing an electron beam which is shaped by a first aperture having a first opening and a second aperture having a plurality of second openings. The shaped electron beam is irradiated on a sample surface to expose plurality of patterns on the sample surface, wherein an exposure dose is determined according to an exposure intensity distribution function, thereby correcting a proximity effect, while the exposure dose is also controlled to correct for a beam blur induced by a Coulomb interaction effect. The exposure intensity distribution function includes a term for correcting the Coulomb interaction effect.

    摘要翻译: 本文公开了一种电子束电池投影光刻的方法,其采用电子束,该电子束由具有第一开口的第一孔和具有多个第二开口的第二孔形成。 将成形的电子束照射在样品表面上以暴露样品表面上的多个图案,其中根据曝光强度分布函数确定曝光剂量,从而校正邻近效应,同时还控制曝光剂量以校正 由库仑相互作用影响引起的光束模糊。 曝光强度分布函数包括用于校正库仑相互作用效应的项。

    Method of writing cross pattern in adjacent areas of layer sensitive to
charged particle beam for improving stitching accuracy without
sacrifice of throughput
    10.
    发明授权
    Method of writing cross pattern in adjacent areas of layer sensitive to charged particle beam for improving stitching accuracy without sacrifice of throughput 失效
    在对带电粒子束敏感的层的相邻区域中写交叉图案的方法,以提高缝合精度,而不牺牲生产量

    公开(公告)号:US6066854A

    公开(公告)日:2000-05-23

    申请号:US138330

    申请日:1998-08-24

    申请人: Takao Tamura

    发明人: Takao Tamura

    摘要: A data processor compares a length of a pattern to be written into a layer sensitive to a charged particle beam with a critical length equal to the maximum length of a cross section of the charged particle beam or the maximum length of a variable sub-field to see whether or not the pattern is written through a radiation of the maximized cross section or through a radiation onto the maximized sub-field, and a main deflector and a sub-deflector guide a shot of charged particle beam to the layer if the answer is positive so that the pattern is prevented from deformation due to a low stitching accuracy.

    摘要翻译: 数据处理器将要写入的图案的长度与对带电粒子束敏感的层的长度进行比较,其临界长度等于带电粒子束的横截面的最大长度或可变子场的最大长度至 看是否通过最大截面的辐射或通过辐射将图案写入到最大化的子场上,如果答案是,则主偏转器和副偏转器将带电粒子束的照射引导到层 使得图案由于缝合精度低而防止变形。