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公开(公告)号：US06707834B2
公开(公告)日：2004-03-16
申请号：US10179012
申请日：2002-06-26
申请人： Hiroyuki Hosoba , Yasuo Kan
发明人： Hiroyuki Hosoba , Yasuo Kan
IPC分类号： H01S500
CPC分类号： H01S5/0421 , H01S5/2231 , H01S5/2275 , H01S5/321 , H01S5/32391
摘要： In a semiconductor laser element, an active layer is sandwiched between first-conductivity type and second-conductivity type cladding layers, and a second-conductivity type contact layer is disposed above the second cladding layer with an intermediate bandgap layer interposed between the second cladding layer and the contact layer, the second-conductivity type contact layer having a bandgap different from a bandgap of the second-conductivity type cladding layer, the intermediate bandgap layer having an intermediate bandgap between the bandgaps of the second-conductivity type cladding layer and the second-conductivity type contact layer. The second-conductivity type contact layer has at least a first contact layer, an intermediate second contact layer and a third contact layer stacked in this order and the second contact layer has an impurity density lower than impurity densities of the first and third contact layers.
摘要翻译： 在半导体激光元件中，有源层夹在第一导电型和第二导电型包覆层之间，第二导电型接触层设置在第二覆层的上方，中间带隙层介于第二覆层 所述接触层，所述第二导电型接触层具有与所述第二导电型包覆层的带隙不同的带隙，所述中间带隙层在所述第二导电型包覆层的带隙与所述第二导电型包覆层的带隙之间具有中间带隙 导电型接触层。 第二导电型接触层具有至少第一接触层，中间第二接触层和第三接触层，并且第二接触层的杂质密度低于第一和第三接触层的杂质浓度。
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2.发明授权公开(公告)号：US06548824B2
公开(公告)日：2003-04-15
申请号：US09883497
申请日：2001-06-19
IPC分类号： H01L2906
CPC分类号： H01L33/10
摘要： A semiconductor light emitting device has in sequence on a semiconductor substrate, a multilayer reflection film, a semiconductor layer, and a quantum well active layer. A distance between an upper surface of the multilayer reflection film and a lower surface of the quantum well active layer is 2&lgr;/n or less, where &lgr; is a light emission wavelength and n is an average refractive index of the semiconductor layer disposed in between the multilayer reflection film and the quantum well active layer. A phase difference between a reflected ray of light reflected by the multilayer reflection film and an emitted ray of light from the quantum well active layer is a multiple of 2&pgr;. In an emission spectrum of the semiconductor light emitting device, two troughs caused by interference between the emitted ray of light and the reflected ray of light appear in the both sides of a main peak. Therefore, the troughs are unlikely to match the main peak, and the peak wavelength of the semiconductor light emitting device can be sustained. Thus, the semiconductor light emitting device stably obtains a specified peak wavelength even when there is slight variance in the distance between the upper surface of the multilayer reflection film and the lower surface of the quantum well active layer.
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公开(公告)号：US5271028A
公开(公告)日：1993-12-14
申请号：US918462
申请日：1992-07-22
申请人： Masafumi Kondo , Takahiro Suyama , Shinji Kaneiwa , Toshio Hata , Hiroyuki Hosoba , Sadayoshi Matsui
发明人： Masafumi Kondo , Takahiro Suyama , Shinji Kaneiwa , Toshio Hata , Hiroyuki Hosoba , Sadayoshi Matsui
CPC分类号： B82Y20/00 , H01S5/2232 , H01S5/305 , H01S5/2231 , H01S5/2237 , H01S5/3081 , H01S5/32308 , H01S5/3432
摘要： A semiconductor laser device which can effectively confine electrons and positive holes is disclosed. The semiconductor laser device includes a semiconductor substrate of a first conductivity type, a current blocking layer of a second conductivity type, a first semiconductor layer of the first conductivity type made of a III-V group compound semiconductor, an active layer made of a III-V group compound semiconductor, and a second semiconductor layer. The semiconductor substrate has a ridge-type mesa having (n11)A planes. The current blocking layer is formed on the semiconductor substrate other than the top face of the mesa. The first semiconductor layer is formed on the entire surface of the current blocking layer and on the top face of the mesa. The active layer is formed on the first semiconductor layer. The second semiconductor layer is formed on the active layer. The second semiconductor layer has inclined portions, and is made of a III-V group compound semiconductor containing an amphoteric element as an impurity so that the inclined portions are of the first conductivity type and the other portions are of the second conductivity type.
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公开(公告)号：US4914669A
公开(公告)日：1990-04-03
申请号：US222968
申请日：1988-07-22
CPC分类号： H01S5/4031 , H01S5/028 , H01S5/1028 , H01S5/1032
摘要： A semiconductor laser array apparatus comprising a single substrate and a plurality of semiconductor laser devices that are disposed with a given pitch on the substrate, some of the semiconductor laser devices constituting laser devices of a laser oscillation-operating area of the semiconductor laser array apparatus and the other semiconductor laser devices constituting laser devices of the non-laser oscillation-operating areas that are positioned outside of the laser oscillation-operating area, wherein the oscillation threshold current level of at least one of the semiconductor laser devices of each of the non-laser oscillation-operating areas that is the closest to the laser oscillation-operating area is higher than those of the semiconductor laser devices of the laser oscillation-operating area.
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5.发明授权Semiconductor light emitting device for stably obtaining peak wave length of emission spectrum 有权用于稳定地获得发射光谱的峰值波长的半导体发光器件公开(公告)号：US06924502B2
公开(公告)日：2005-08-02
申请号：US10270593
申请日：2002-10-16
IPC分类号： H01L33/06 , H01L33/10 , H01L33/28 , H01L33/30 , H01L33/46 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/10
摘要： A semiconductor light emitting device has in sequence on a semiconductor substrate, a multilayer reflection film, a semiconductor layer, and a quantum well active layer. A distance between an upper surface of the multilayer reflection film and a lower surface of the quantum well active layer is 2λ/n or less, where λ is a light emission wavelength and n is an average refractive index of the semiconductor layer disposed in between the multilayer reflection film and the quantum well active layer. A phase difference between a reflected ray of light reflected by the multilayer reflection film and an emitted ray of light from the quantum well active layer is a multiple of 2π. The semiconductor light emitting device stably obtains a specified peak wavelength even when there is slight variance in the distance between the upper surface of the multilayer reflection film and the lower surface of the quantum well active layer.
摘要翻译： 半导体发光器件依次在半导体衬底上，多层反射膜，半导体层和量子阱活性层上。 多层反射膜的上表面和量子阱活性层的下表面之间的距离为λλ/ n以下，其中λ为发光波长，n为设置在该多层反射膜之间的半导体层的平均折射率 多层反射膜和量子阱活性层。 由多层反射膜反射的反射光和来自量子阱活性层的发射光之间的相位差为2pi的倍数。 即使在多层反射膜的上表面和量子阱活性层的下表面之间的距离稍微变化的情况下，半导体发光器件也稳定地获得规定的峰值波长。
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公开(公告)号：US06465812B1
公开(公告)日：2002-10-15
申请号：US09671777
申请日：2000-09-27
申请人： Hiroyuki Hosoba , Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Kazuaki Sasaki , Junichi Nakamura
发明人： Hiroyuki Hosoba , Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L3300
CPC分类号： H01L33/16 , H01L33/30 , H01S5/3202
摘要： A semiconductor light emitting device of the present invention at least includes: a GaAs substrate whose principal plane is inclined from a (100) plane in a [011] orientation; a first buffer layer of AlxGa1−xAs (0≦x≦1) provided on the principal plane of the GaAs substrate; a second buffer layer of AlyGaxIn1−y−zP (0≦y≦1 and 0≦z≦1) provided on the first buffer layer; a first cladding layer of AlaGatIn1−a−tP (0≦s≦1 and 0≦t≦1) provided on the second buffer layer; an active layer provided on the first cladding layer; and a second cladding layer provided on the active layer, wherein an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer.
摘要翻译： 本发明的半导体发光器件至少包括：主面从[011]取向的（100）面倾斜的GaAs衬底; 设置在GaAs衬底的主平面上的Al x Ga 1-x As（0 <= x <= 1）的第一缓冲层; 设置在第一缓冲层上的AlyGaxIn1-y-zP（0 <= y <= 1和0 <= z <= 1）的第二缓冲层; 提供在第二缓冲层上的AlaGatIn1-a-tP（0≤s≤1且0 <= t <= 1）的第一包层; 设置在所述第一包层上的有源层; 以及设置在所述有源层上的第二覆层，其中所述第一包层的Al含量s大于所述第二缓冲层的Al含量y。
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公开(公告)号：US4856015A
公开(公告)日：1989-08-08
申请号：US203469
申请日：1988-06-07
CPC分类号： H01S5/02461 , H01L24/32 , H01S5/02 , H01S5/4068 , H01L2924/12042
摘要： A semiconductor laser array device has a relatively wide light-emitting area with many semiconductor lasers and a shielding layer selectively disposed with respect to peripheral regions of the light-emitting area such that the rate of heat emission from the center part can be increased relative to that from the peripheral regions. Temperature distribution on the light-emitting area can thus be made uniform and laser light can be emitted from the entire laser emitting area under a phase-synchronized condition.
摘要翻译： 半导体激光器阵列器件具有相当宽的发光面积，具有许多半导体激光器和相对于发光区域的周边区域选择性地布置的屏蔽层，使得来自中心部分的热发射速率可以相对于 来自周边地区。 因此，在相位同步状态下，可以使发光区域的温度分布均匀，从整个激光发射区域发射激光。
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公开(公告)号：US20070177645A1
公开(公告)日：2007-08-02
申请号：US11698187
申请日：2007-01-26
申请人： Hiroyuki Hosoba
发明人： Hiroyuki Hosoba
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/20 , H01S5/2219 , H01S5/305 , H01S5/32316 , H01S2301/173
摘要： A semiconductor laser device, comprising a buffer layer of a first conductivity type, a clad layer of the first conductivity type, an active layer and a clad layer of a second conductivity type formed on a semiconductor substrate of the first conductivity type, wherein a band gap in the buffer layer of the first conductivity type has a value which is greater than a band gap of the semiconductor substrate and smaller than a band gap of the clad layer of the first conductivity type, and an impurity concentration in the buffer layer of the first conductivity type is higher than an impurity concentration in the clad layer of the first conductivity type.
摘要翻译： 一种半导体激光器件，包括形成在第一导电类型的半导体衬底上的第一导电类型的缓冲层，第一导电类型的包覆层，有源层和第二导电类型的覆盖层，其中带 第一导电类型的缓冲层中的间隙具有大于半导体衬底的带隙并且小于第一导电类型的包覆层的带隙的值，以及第一导电类型的缓冲层中的杂质浓度 第一导电类型高于第一导电类型的包层中的杂质浓度。
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9.发明授权公开(公告)号：US07084433B2
公开(公告)日：2006-08-01
申请号：US10377704
申请日：2003-03-04
申请人： Hiroyuki Hosoba , Atsuo Tsunoda , Hiroshi Hayashi
发明人： Hiroyuki Hosoba , Atsuo Tsunoda , Hiroshi Hayashi
IPC分类号： H01L33/00
CPC分类号： H01S5/2231 , H01S5/2081 , H01S5/209 , H01S5/2205 , H01S5/2219
摘要： In this semiconductor laser device, an InGaP etching block layer 11 as an etching selection layer having etching selectivity for an n-type AlInP current block layer 10, which is a non-optical-absorption layer, is formed on the n-type current block layer 10. Since this etching block layer 11 prevents the current block layer 10 on both sides of a ridge 20 from being etched during manufacture, a contact layer 12 can be prevented from entering gaps between the sides of this ridge 20 and the current block layer 10. Therefore, light oscillating in an active layer 4 is taken out from a device end surface without being absorbed in the contact layer 12. According to this semiconductor laser device, an oscillation threshold current and an operation current can be maintained low, deterioration of differential quantum efficiency can be prevented and reliability can be improved.
摘要翻译： 在该半导体激光器件中，在n型电流块上形成作为非光学吸收层的n型AlInP电流阻挡层10具有蚀刻选择性的蚀刻选择层的InGaP蚀刻阻挡层11 第10层。 由于该蚀刻阻挡层11防止在制造期间在脊20的两侧上的电流阻挡层10被蚀刻，因此可以防止接触层12进入该脊20的两侧与当前阻挡层10之间的间隙。 因此，在有源层4中振荡的光从器件端面取出而不被吸收在接触层12中。 根据该半导体激光器件，可以将振荡阈值电流和工作电流维持在较低水平，可以防止差分量子效率的劣化，提高可靠性。
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公开(公告)号：US20050031007A1
公开(公告)日：2005-02-10
申请号：US10933456
申请日：2004-09-03
IPC分类号： H01L33/06 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/30 , H01L33/38 , H01L33/40 , H01L33/46 , H01S5/183 , H01S3/097 , H01S5/00
CPC分类号： H01L33/30 , H01L33/105 , H01L33/38 , H01L33/42 , H01L33/46
摘要： Is provided a resonant cavity type light emitting diode having excellent humidity durability and a light output unsaturated even several 10 mA., which is suitable for mass production. The semiconductor light emitting element has a resonator formed by one set of multi-layer reflecting films disposed at a constant distance on a GaAs substrate inclined at an angle of not less than 2 degrees in the direction [011] or [0-1-1] from the plane (100) and a light emitting layer disposed at a loop position of a standing wave in the resonator, wherein a multi-layer reflecting film disposed on the GaAs substrate side is composed of plural layers of AlxGa1-xAs (0≦x≦1) and a multi-layer reflecting film disposed on the opposite side of the GaAs substrate is composed of plural layers of AlyGazIn1-y-zP (0≦y≦1, 0≦z≦1), thereby achieving an improved humidity durability and an increased reflection factor by increasing the number of the reflection layers.
摘要翻译： 提供了一种谐振腔型发光二极管，具有优异的耐湿性和光输出不饱和，甚至几十mA，适合批量生产。 半导体发光元件具有由在GaAs衬底上以恒定距离设置的一组多层反射膜形成的谐振器，该GaAs衬底在方向[011]或[0-1-1]上以不小于2度的角度倾斜 ]和布置在共振器的驻波环路位置的发光层，其中设置在GaAs衬底侧的多层反射膜由多层Al x Ga 1-x As（0 < = x <= 1），并且设置在GaAs衬底的相对侧上的多层反射膜由多层AlyGazIn1-y-zP（0≤y≤1,0
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