公开(公告)号：US20140139775A1

公开(公告)日：2014-05-22

申请号：US14077390

申请日：2013-11-12

申请人： Hiroyuki MIYAKE ,  Shunpei YAMAZAKI ,  Yoshifumi TANADA ,  Manabu SATO ,  Toshinari SASAKI ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Takuya MATSUO ,  Hiroshi MATSUKIZONO ,  Yosuke KANZAKI ,  Shigeyasu MORI

发明人： Hiroyuki MIYAKE ,  Shunpei YAMAZAKI ,  Yoshifumi TANADA ,  Manabu SATO ,  Toshinari SASAKI ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Takuya MATSUO ,  Hiroshi MATSUKIZONO ,  Yosuke KANZAKI ,  Shigeyasu MORI

IPC分类号： G02F1/1368 ,  H01L27/12

CPC分类号： H01L27/1225 ,  H01L27/124 ,  H01L29/78648

摘要： A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.

摘要翻译： 半导体器件包括：晶体管，包括栅极电极，栅极上的栅极绝缘膜，栅极绝缘膜上的半导体层，以及半导体层上的源极和漏极; 包括晶体管上的无机材料的第一绝缘膜; 包括在所述第一绝缘膜上的有机材料的第二绝缘膜; 在所述第二绝缘膜上并且在与所述半导体层重叠的区域中的第一导电膜; 在所述第一导电膜上包括无机材料的第三绝缘膜; 以及在所述第三绝缘膜上并且在与所述第一导电膜重叠的区域中的第二导电膜。 施加到第一导电膜的第一电位的绝对值大于施加到第二导电膜的第二电位的绝对值。

公开(公告)号：US20120050020A1

公开(公告)日：2012-03-01

申请号：US12872610

申请日：2010-08-31

申请人： Heather KONET ,  Tsuyoshi KANUMA ,  Manabu SATO ,  Toshiyuki TABATA

发明人： Heather KONET ,  Tsuyoshi KANUMA ,  Manabu SATO ,  Toshiyuki TABATA

IPC分类号： G08B3/00

CPC分类号： B60Q5/008 ,  G10K15/02

摘要： A method for controlling a vehicle to emanate an audible alert including determining when the vehicle is operating, and controlling a speaker system in the vehicle to emanate the audible alert outside of the vehicle when the vehicle is operating based on stored information representative of an internal combustion engine (ICE) noise profile. The audible alert has a sound profile including a simultaneous emanation of first, second and third audible frequency components having first, second and third frequencies, respectively, with the first and second frequencies emanating at first and second sound pressure levels greater than first and second representative sound pressure levels of the ICE noise profile at the first and second frequencies, respectively, and the third frequency emanating at a third sound pressure level less than a third representative sound pressure level of the ICE noise profile at the third frequency.

摘要翻译： 一种用于控制车辆发出可听警报的方法，包括确定车辆何时运行，并且当车辆正在操作时，控制车辆中的扬声器系统，以便基于存储的表示内燃的信息来发出车辆外的可听警报 发动机（ICE）噪音曲线。 声音警报具有声音简档，包括分别具有第一，第二和第三声音频率分量的同时发音，所述第一，第二和第三声音频率分量具有分别具有大于第一和第二代表的第一和第二声压级的第一和第二频率 分别在第一和第二频率处的ICE噪声分布的声压级以及在第三频率处的ICE噪声分布的小于第三代表声压级的第三声压级发出的第三频率。

公开(公告)号：US20100279375A1

公开(公告)日：2010-11-04

申请号：US12839711

申请日：2010-07-20

申请人： Manabu SATO ,  Kazuhiro ONOZUKA ,  Takaaki WATANABE ,  Hiroyuki KONISHI

发明人： Manabu SATO ,  Kazuhiro ONOZUKA ,  Takaaki WATANABE ,  Hiroyuki KONISHI

IPC分类号： C12N11/14 ,  C12N11/00 ,  C12N11/08 ,  C12N11/10

CPC分类号： C12N11/14 ,  C11C1/045

摘要： A method for producing an immobilized enzyme which includes the steps of immobilizing an enzyme used for hydrolyzing fats and oils on a immobilization carrier by adsorption, bringing the immobilized enzyme into contact with an organic solvent in which fat-soluble fatty acids or the derivatives thereof have been dissolved, and adjusting the moisture content of the immobilized enzyme from 1 to 20% by weight based on the weight of the carrier.

摘要翻译： 一种固定化酶的制造方法，其特征在于，包括以下步骤：通过吸附将固定化载体上的水解油脂的酶固定化，使固定化酶与脂溶性脂肪酸或其衍生物具有的有机溶剂接触 已经溶解，并且基于载体的重量将固定化酶的水分含量调整为1至20重量％。

公开(公告)号：US20130000820A1

公开(公告)日：2013-01-03

申请号：US13610936

申请日：2012-09-12

申请人： Motohiko SATO ,  Kazuhiro HAYASHI ,  Kenji MURAKAMI ,  Motonobu KURAHASHI ,  Yusuke KAIEDA ,  Jun OTSUKA ,  Manabu SATO

发明人： Motohiko SATO ,  Kazuhiro HAYASHI ,  Kenji MURAKAMI ,  Motonobu KURAHASHI ,  Yusuke KAIEDA ,  Jun OTSUKA ,  Manabu SATO

IPC分类号： H01G13/00 ,  B32B37/14

CPC分类号： H05K1/0231 ,  H01G4/228 ,  H01G4/30 ,  H01G4/38 ,  H01L23/49822 ,  H01L2924/0002 ,  H01L2924/3511 ,  H05K1/185 ,  H05K3/4602 ,  H05K2201/10712 ,  H01L2924/00

摘要： A wiring substrate in which a capacitor is provided, the capacitor comprising a capacitor body including a plurality of dielectric layers and internal electrode layers provided between the different dielectric layers, wherein said capacitor body has, in at least one side face of said capacitor body, recesses extending in a thickness direction of said capacitor body from at least one of a first principal face of said capacitor body and a second principal face positioned on the side opposite to the first principal face.

摘要翻译： 一种电容器，其具有电容器，所述电容器包括：电容器主体，包括多个电介质层和设置在所述不同电介质层之间的内部电极层，其中所述电容器本体在所述电容器主体的至少一个侧面中， 从所述电容器主体的第一主面和位于与所述第一主面相反的一侧的第二主面中的至少一个在所述电容器本体的厚度方向上延伸的凹部。

公开(公告)号：US20100213531A1

公开(公告)日：2010-08-26

申请号：US12699938

申请日：2010-02-04

申请人： Yoshinobu ASAMI ,  Manabu SATO

发明人： Yoshinobu ASAMI ,  Manabu SATO

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L27/11521 ,  H01L21/84 ,  H01L27/0207 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1266

摘要： A nonvolatile memory element which is provided with a floating gate electrode and a high withstand voltage transistor which is provided with a thick gate insulating film are formed over one substrate without increase in a driving voltage of the nonvolatile memory element. A stacked film of a first insulating film and a second insulating film is formed between an island-like semiconductor region and a floating gate electrode of the nonvolatile memory element and between an island-like semiconductor region and a gate electrode of the transistor. The first insulating film overlapping with the floating gate electrode is removed, and the insulating film between the island-like semiconductor region and the floating gate electrode is formed thinner than the gate insulating film of the transistor. The transistor includes a conductive film which is formed in the same layer as the floating gate electrode and a conductive film which is formed in the same layer as a control gate electrode, and these two conductive films are electrically connected to each other and function as the gate electrodes of the transistor.

摘要翻译： 在不增加非易失性存储元件的驱动电压的情况下，在一个衬底上形成设置有浮栅电极和设置有厚栅极绝缘膜的高耐压晶体管的非易失性存储元件。 第一绝缘膜和第二绝缘膜的层叠膜形成在非易失性存储元件的岛状半导体区域和浮栅之间以及晶体管的岛状半导体区域和栅电极之间。 去除与浮栅电极重叠的第一绝缘膜，并且形成岛状半导体区域和浮置栅电极之间的绝缘膜比晶体管的栅极绝缘膜更薄。 晶体管包括形成在与浮置栅电极相同的层中的导电膜和与控制栅电极形成在同一层中的导电膜，并且这两个导电膜彼此电连接并用作 晶体管的栅电极。

公开(公告)号：US20080233757A1

公开(公告)日：2008-09-25

申请号：US11860788

申请日：2007-09-25

申请人： Masanobu HONDA ,  Manabu SATO ,  Yoshiki IGARASHI

发明人： Masanobu HONDA ,  Manabu SATO ,  Yoshiki IGARASHI

IPC分类号： H01L21/3065

CPC分类号： H01L21/467 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/31116

摘要： A plasma processing method for processing a target substrate uses a plasma processing apparatus which includes a vacuum evacuable processing vessel for accommodating the target substrate therein, a first electrode disposed in the processing vessel and connected to a first RF power supply for plasma generation and a second electrode disposed to face the first electrode. The method includes exciting a processing gas containing fluorocarbon in the processing vessel to generate a plasma while applying a negative DC voltage having an absolute value ranging from about 100 V to 1500 V or an RF power of a frequency lower than about 4 MHz to the second electrode. The target layer is etched by the plasma, thus forming recesses on the etching target layer based on the pattern of the resist layer.

摘要翻译： 用于处理目标基板的等离子体处理方法使用等离子体处理装置，该等离子体处理装置包括用于容纳目标基板的真空可排除处理容器，设置在处理容器中的第一电极，并连接到用于等离子体产生的第一RF电源， 设置成面对第一电极的电极。 该方法包括在处理容器中激发含有碳氟化合物的处理气体，以产生等离子体，同时施加绝对值范围从约100V至1500V或低于约4MHz的RF功率的负DC电压至第二 电极。 通过等离子体蚀刻目标层，由此基于抗蚀剂层的图案在蚀刻目标层上形成凹部。