公开(公告)号：US20140139775A1

公开(公告)日：2014-05-22

申请号：US14077390

申请日：2013-11-12

申请人： Hiroyuki MIYAKE ,  Shunpei YAMAZAKI ,  Yoshifumi TANADA ,  Manabu SATO ,  Toshinari SASAKI ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Takuya MATSUO ,  Hiroshi MATSUKIZONO ,  Yosuke KANZAKI ,  Shigeyasu MORI

发明人： Hiroyuki MIYAKE ,  Shunpei YAMAZAKI ,  Yoshifumi TANADA ,  Manabu SATO ,  Toshinari SASAKI ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Takuya MATSUO ,  Hiroshi MATSUKIZONO ,  Yosuke KANZAKI ,  Shigeyasu MORI

IPC分类号： G02F1/1368 ,  H01L27/12

CPC分类号： H01L27/1225 ,  H01L27/124 ,  H01L29/78648

摘要： A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.

摘要翻译： 半导体器件包括：晶体管，包括栅极电极，栅极上的栅极绝缘膜，栅极绝缘膜上的半导体层，以及半导体层上的源极和漏极; 包括晶体管上的无机材料的第一绝缘膜; 包括在所述第一绝缘膜上的有机材料的第二绝缘膜; 在所述第二绝缘膜上并且在与所述半导体层重叠的区域中的第一导电膜; 在所述第一导电膜上包括无机材料的第三绝缘膜; 以及在所述第三绝缘膜上并且在与所述第一导电膜重叠的区域中的第二导电膜。 施加到第一导电膜的第一电位的绝对值大于施加到第二导电膜的第二电位的绝对值。

公开(公告)号：US20140021466A1

公开(公告)日：2014-01-23

申请号：US13937591

申请日：2013-07-09

申请人： Shunpei YAMAZAKI ,  Naoya SAKAMOTO ,  Takahiro SATO ,  Shunsuke KOSHIOKA ,  Takayuki CHO ,  Yoshitaka YAMAMOTO ,  Takuya MATSUO ,  Hiroshi MATSUKIZONO ,  Yosuke KANZAKI

发明人： Shunpei YAMAZAKI ,  Naoya SAKAMOTO ,  Takahiro SATO ,  Shunsuke KOSHIOKA ,  Takayuki CHO ,  Yoshitaka YAMAMOTO ,  Takuya MATSUO ,  Hiroshi MATSUKIZONO ,  Yosuke KANZAKI

IPC分类号： H01L29/786 ,  H01L29/201

CPC分类号： H01L29/7869 ,  H01L29/201

摘要： A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film.

摘要翻译： 半导体器件包括栅电极; 栅电极上的栅极绝缘膜; 与所述栅极绝缘膜接触并且包括与所述栅电极重叠的沟道形成区域的氧化物半导体膜; 氧化物半导体膜上的源电极和漏电极; 以及氧化物半导体膜，源电极和漏电极上的氧化物绝缘膜。 源极电极和漏极电极各自包括在沟道形成区域的端部具有端部的第一金属膜，在第一金属膜上的含有铜的第二金属膜和在第二金属膜上的第三金属膜。 第二金属膜形成在比第一金属膜的端部的内侧。

公开(公告)号：US20120286270A1

公开(公告)日：2012-11-15

申请号：US13463092

申请日：2012-05-03

申请人： Atsuo ISOBE ,  Toshinari SASAKI ,  Junichi KOEZUKA ,  Shunpei YAMAZAKI

发明人： Atsuo ISOBE ,  Toshinari SASAKI ,  Junichi KOEZUKA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/4238 ,  H01L21/02565 ,  H01L21/265 ,  H01L21/425 ,  H01L21/84 ,  H01L27/1085 ,  H01L27/10876 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1225 ,  H01L28/40 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78693

摘要： It is an object to provide a semiconductor device in which a short-channel effect is suppressed and miniaturization is achieved, and a manufacturing method thereof. A trench is formed in an insulating layer and impurities are added to an oxide semiconductor film in contact with an upper end corner portion of the trench, whereby a source region and a drain region are formed. With the above structure, miniaturization can be achieved. Further, with the trench, a short-channel effect can be suppressed setting the depth of the trench as appropriate even when a distance between a source electrode layer and a drain electrode layer is shortened.

摘要翻译： 本发明的目的是提供一种抑制短路效应并实现小型化的半导体器件及其制造方法。 在绝缘层中形成沟槽，并且将杂质添加到与沟槽的上端角部接触的氧化物半导体膜，由此形成源极区域和漏极区域。 利用上述结构，可以实现小型化。 此外，利用沟槽，即使当源电极层和漏电极层之间的距离缩短时，也可以适当地抑制沟槽的深度适当地设定短沟道效应。

公开(公告)号：US20110266564A1

公开(公告)日：2011-11-03

申请号：US13179824

申请日：2011-07-11

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Yoshifumi TANADA ,  Hiroyuki MIYAKE ,  Kei TAKAHASHI

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Yoshifumi TANADA ,  Hiroyuki MIYAKE ,  Kei TAKAHASHI

IPC分类号： H01L33/08

CPC分类号： H01L27/3276 ,  H01L27/124 ,  H01L27/1266

摘要： A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display region where a plurality of pixels are arranged. Further, an interlayer insulating film is formed over a wiring (an auxiliary power supply line) for electrically connecting the power supply lines to each other in the display region and a gate electrode of a transistor included in a pixel; and the power supply lines are formed over the interlayer insulating film which is formed over the auxiliary power supply line and the gate electrode. Furthermore, a wiring (an auxiliary wiring) formed over the interlayer insulating film is electrically or directly connected to the auxiliary power supply line.

摘要翻译： 提供一种使用能够抑制由于布线的电位下降引起的像素之间的亮度不均匀的发光元件的半导体显示装置。 供给电源电位的电源线在布置有多个像素的显示区域中彼此电连接。 此外，在用于将显示区域中的电源线彼此电连接并且包括在像素中的晶体管的栅电极的布线（辅助电源线）上形成层间绝缘膜; 并且在辅助电源线和栅电极之间形成的层间绝缘膜上形成电源线。 此外，形成在层间绝缘膜上的布线（辅助布线）与辅助电源线电连接或直接连接。

公开(公告)号：US20120205675A1

公开(公告)日：2012-08-16

申请号：US13367643

申请日：2012-02-07

申请人： Shunpei YAMAZAKI ,  Koji ONO ,  Yoshifumi TANADA

发明人： Shunpei YAMAZAKI ,  Koji ONO ,  Yoshifumi TANADA

IPC分类号： H01L27/15 ,  H01L33/36

CPC分类号： H01L27/3204 ,  H01L27/3202 ,  H01L27/3246

摘要： To provide a light-emitting device including the plurality of light-emitting elements having a structure in which a light-emitting area is large and defects in patterning of light-emitting elements are suppressed. To provide a lighting device including the light-emitting device. The light-emitting device includes a first wiring provided over a substrate having an insulating surface, an insulating film provided over the first wiring, a second wiring provided over the insulating film, and a light-emitting element unit including a plurality of light-emitting elements provided over the first wiring with the insulating film provided therebetween. The plurality of light-emitting elements each include a first electrode layer having a light-blocking property, a layer containing an organic compound in contact with the first electrode layer, and a second electrode layer having a light-transmitting property in contact with the layer containing an organic compound. The layers containing an organic compound are separated by a separation layer.

摘要翻译： 为了提供一种发光装置，其包括具有发光面积大的结构的多个发光元件，并且抑制了发光元件的图案化缺陷。 提供一种包括发光装置的照明装置。 发光装置包括设置在具有绝缘表面的基板上的第一布线，设置在第一布线上的绝缘膜，设置在绝缘膜上的第二布线，以及包括多个发光的发光元件单元 设置在第一布线上的元件与设置在其间的绝缘膜。 多个发光元件各自包括具有阻光性的第一电极层，含有与第一电极层接触的有机化合物的层和与该层接触的具有透光性的第二电极层 含有机化合物。 含有有机化合物的层被分离层分离。

公开(公告)号：US20110148208A1

公开(公告)日：2011-06-23

申请号：US13036360

申请日：2011-02-28

申请人： Yoshifumi TANADA ,  Shunpei YAMAZAKI

发明人： Yoshifumi TANADA ,  Shunpei YAMAZAKI

IPC分类号： H02J1/10

CPC分类号： G06F3/147 ,  G09G2300/0408 ,  G09G2330/02 ,  G09G2380/06 ,  Y10T307/50 ,  Y10T307/62 ,  Y10T307/625 ,  Y10T307/696

摘要： In order to increase the continuous operating time of a display device driven by a battery or the like, and a portable information terminal using the same, the volume and weight of the battery are increased. Thus, there arises a trade-off between the increased capacity of the battery and the portability of the device/terminal. Therefore, the invention provides a display device with portability ensured, which is capable of operating continuously for long periods and a portable information terminal using the same. In the display device, TFTs and an RFID tag are formed over the same insulating substrate. The RFID tag detects signals from a reader/writer, and generates DC power based on the signals. While the RFID tag is detecting signals, the display device is driven by the DC power generated in the RFID tag.

摘要翻译： 为了增加由电池等驱动的显示装置的连续运行时间，以及使用其的便携式信息终端，电池的体积和重量增加。 因此，在电池的增加的容量和设备/终端的便携性之间出现权衡。 因此，本发明提供了能够长时间连续工作的便携性显示装置和使用该显示装置的便携式信息终端。 在显示装置中，TFT和RFID标签形成在相同的绝缘基板上。 RFID标签检测来自读写器的信号，并根据信号产生直流电力。 当RFID标签正在检测信号时，显示装置由RFID标签中产生的DC电力驱动。

公开(公告)号：US20090283775A1

公开(公告)日：2009-11-19

申请号：US12506465

申请日：2009-07-21

申请人： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

发明人： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

IPC分类号： H01L33/00

CPC分类号： H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

摘要： Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

摘要翻译： 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件，电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置，可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化，或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。

公开(公告)号：US20110309368A1

公开(公告)日：2011-12-22

申请号：US13223582

申请日：2011-09-01

申请人： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

发明人： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

IPC分类号： H01L33/08

CPC分类号： H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

摘要： Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

摘要翻译： 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件，电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置，可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化，或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。

公开(公告)号：US20110027980A1

公开(公告)日：2011-02-03

申请号：US12904181

申请日：2010-10-14

申请人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Yasuyuki ARAI ,  Yoshitaka MORIYA ,  Kazuko IKEDA ,  Yoshifumi TANADA ,  Shuhei TAKAHASHI

发明人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Yasuyuki ARAI ,  Yoshitaka MORIYA ,  Kazuko IKEDA ,  Yoshifumi TANADA ,  Shuhei TAKAHASHI

IPC分类号： H01L21/768

CPC分类号： H01L29/42368 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/84 ,  H01L27/12 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/7881

摘要： The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.

摘要翻译： 半导体器件具有半导体层，覆盖半导体层的端部的栅电极和用于使半导体层和栅电极绝缘的绝缘层。 使半导体层的端部与栅电极重叠的区域绝缘的绝缘层的膜厚比覆盖半导体层的中心部的绝缘层的膜厚厚。

公开(公告)号：US20060244702A1

公开(公告)日：2006-11-02

申请号：US11381062

申请日：2006-05-01

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Mitsuaki OSAME ,  Yoshifumi TANADA ,  Ryota FUKUMOTO ,  Hiromi YANAI

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Mitsuaki OSAME ,  Yoshifumi TANADA ,  Ryota FUKUMOTO ,  Hiromi YANAI

IPC分类号： G09G3/36

CPC分类号： G09G3/20 ,  G06F3/1431 ,  G09G3/2022 ,  G09G5/399 ,  G09G2300/0426 ,  G09G2320/0271 ,  G09G2320/0606 ,  G09G2320/0613 ,  G09G2320/0666 ,  G09G2320/10 ,  G09G2330/021 ,  G09G2340/0428 ,  G09G2340/0492 ,  G09G2340/14 ,  G09G2360/144 ,  H01L27/3269 ,  H01L27/3279 ,  H04M1/0214 ,  H04M1/0266 ,  H04M1/22 ,  H04M2250/16

摘要： The object of the invention is to provide a display device of which the display is visible in a dark place or under strong external light. The present invention is a display device which performs display, changing the grayscale number corresponding to the external light strength, and a display device which can switch the display mode corresponding to contents displayed on the screen. The display contents include a text display mode displaying mainly characters and symbols, a picture display mode displaying images with a small number of colors such as a comic, a video mode displaying natural images with a large number of colors such as a photograph and a moving image, and the like. By switching the grayscale number arbitrarily according to these display modes, visibility can be ensured in a wide range from a dark place or under an indoor fluorescent light to under outdoor sunlight. For example, the grayscale number is switched so that display of from 2 to 8 grayscales is performed in the text display mode, display of from 4 to 16 grayscales is performed in the picture display mode, and display of from 64 to 1024 grayscales is performed in the video mode.

摘要翻译： 本发明的目的是提供一种显示装置，其显示器在暗处或在强烈的外部光线下可见。 本发明是执行显示，改变与外部光强度对应的灰度级数的显示装置，以及可以切换与显示在屏幕上的内容对应的显示模式的显示装置。 显示内容包括主要显示字符和符号的文本显示模式，显示诸如漫画的少量颜色的图像的图像显示模式，显示诸如照片和移动的大量颜色的自然图像的视频模式 图像等。 通过根据这些显示模式任意地切换灰度级数，可以在从黑暗的地方或室内荧光灯到室外的阳光下的广泛范围内确保可视性。 例如，切换灰度级数，使得在文本显示模式下执行从2到8个灰度级的显示，在图像显示模式中执行从4到16个灰度级的显示，并且执行从64到1024个灰度级的显示 在视频模式下。