公开(公告)号：US5951374A

公开(公告)日：1999-09-14

申请号：US789046

申请日：1997-01-28

申请人： Tadahiro Kato ,  Hisashi Masumura ,  Masami Nakano ,  Hideo Kudo

发明人： Tadahiro Kato ,  Hisashi Masumura ,  Masami Nakano ,  Hideo Kudo

IPC分类号： H01L21/683 ,  H01L21/304 ,  H01L21/306 ,  B24B1/00

CPC分类号： H01L21/02024 ,  B24B37/30

摘要： A method of polishing semiconductor wafers includes a double side primary polishing step and a single side secondary polishing step using a single side polishing machine with a wafer holder including a template so bonded on a carrier plate as having one or more wafer receiving holes in which backing pads are disposed respectively for holding the back sides of the respective wafers fittingly received therein. This method makes it to possible to hold a plurality of wafers at one time due to batch processing to thereby improve the productivity, and decrease extremely the generation of the defective dimples in the front side of the wafer. Compared with conventional single side polishing, the flatness level of the wafer polished with the double side polishing machine in this method is improved.

摘要翻译： 抛光半导体晶片的方法包括双面一次抛光步骤和单面二次抛光步骤，其使用单面抛光机，其具有包括模板的晶片保持器，所述晶片保持器结合在载体板上，具有一个或多个晶片接收孔，其中背衬 分别设置衬垫，用于将各个晶片的后侧保持在其中。 该方法使得可以通过批量处理一次保持多个晶片，从而提高生产率，并且极大地减少晶片正面中缺陷凹坑的产生。 与传统的单面抛光相比，该方法中用双面抛光机抛光的晶片的平坦度提高。

公开(公告)号：US5759087A

公开(公告)日：1998-06-02

申请号：US435656

申请日：1995-05-05

申请人： Hisashi Masumura ,  Masami Nakano ,  Hideo Kudo

发明人： Hisashi Masumura ,  Masami Nakano ,  Hideo Kudo

IPC分类号： H01L21/304 ,  H01L21/306 ,  H01L21/322

CPC分类号： H01L21/02024 ,  B24B37/042 ,  H01L21/3221

摘要： A method for inducing damage for gettering to the rear surface of a single crystal silicon wafer by polishing the rear surface, which can provide a good gettering effect to the wafer and can also depress dusting characteristics of the rear surface of the wafer, is disclosed. The method comprises the steps of; moving the wafer on an abrasive cloth relatively, and supplying an abrasive liquid having a pH in the range of 4-9 which contains silica particles having an average diameter in the range of 0.1-10 .mu.m as abrasive grains, between the wafer and the abrasive cloth.

摘要翻译： 公开了一种通过抛光后表面而引起对单晶硅晶片背表面吸引的损伤的方法，其可以为晶片提供良好的吸气效果，并且还可以抑制晶片后表面的除尘特性。 该方法包括以下步骤： 相对地将研磨布移动到晶片上，并且将晶片和晶片之间的平均粒径为0.1-10μm的二氧化硅粒子作为磨粒供给pH为4-9的研磨液 砂布。

公开(公告)号：US5447890A

公开(公告)日：1995-09-05

申请号：US210437

申请日：1994-03-21

申请人： Tadahiro Kato ,  Sunao Shima ,  Masami Nakano ,  Hisashi Masumura ,  Hideo Kudo

发明人： Tadahiro Kato ,  Sunao Shima ,  Masami Nakano ,  Hisashi Masumura ,  Hideo Kudo

IPC分类号： H01L21/02 ,  H01L21/302 ,  H01L21/304

CPC分类号： H01L21/02008 ,  Y10S148/138 ,  Y10S438/974

摘要： A wafer which allows manufacture of a device to proceed at an exalted yield by preventing the resolution of exposure at the step of photolithography during the manufacture of the device from being impaired is obtained by a method which comprises a slicing step for slicing a single crystal ingot thereby obtaining wafers of the shape of a thin disc, a chamfering step for chamfering the wafer obtained by the slicing step, a lapping step for imparting a flat surface to the chamfered wafer, an etching step for removing mechanical strain remaining in the lapped wafer, an obverse surface-polishing step for polishing one side of the etched wafer, and a cleaning step for cleaning the polished wafer, which method is characterized by interposing between the etching step and the obverse surface-polishing step a reverse surface-preparing step for preparing the shape of the reverse side of the wafer.

摘要翻译： 通过包括用于切割单晶锭的切片步骤的方法，获得了通过防止在制造器件的光刻期间在光刻步骤中的曝光的分辨率而以制造器件以高产量进行制造的晶片 从而获得薄盘形状的晶片，用于对通过切片步骤获得的晶片进行倒角的倒角步骤，用于向倒角晶片赋予平坦表面的研磨步骤，用于去除在重叠晶片中残留的机械应变的蚀刻步骤， 用于抛光被蚀刻的晶片的一侧的正面抛光步骤和用于清洁抛光的晶片的清洁步骤，该方法的特征在于介于蚀刻步骤和正面抛光步骤之间，用于制备 晶片背面的形状。

公开(公告)号：US5891353A

公开(公告)日：1999-04-06

申请号：US915579

申请日：1997-08-21

申请人： Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo ,  Teruaki Fukami

发明人： Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo ,  Teruaki Fukami

IPC分类号： B24B37/00 ,  C09K3/14 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/02024 ,  H01L21/30625 ,  Y10T428/21

摘要： A semiconductor wafer polishing agent contains mainly a silica containing polishing agent and is added with a polyolefin type fine particle material. The novel semiconductor wafer polishing agent is capable of low brightness polishing to the back face of the wafer, sensor detection of the front and back faces of the wafer, and suppression of dust to be generated by chipping of the back face of the wafer, thereby to increase the yield of semiconductor devices. A polishing method using the polishing agent and a novel semiconductor wafer having a back face with an unconventional surface shape are also disclosed.

公开(公告)号：US5866226A

公开(公告)日：1999-02-02

申请号：US670258

申请日：1996-06-20

申请人： Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo ,  Teruaki Fukami

发明人： Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo ,  Teruaki Fukami

IPC分类号： B24B37/00 ,  C09K3/14 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  B32B3/02 ,  H01L29/00

CPC分类号： H01L21/02024 ,  H01L21/30625 ,  Y10T428/21

摘要： A semiconductor wafer polishing agent contains mainly a silica containing polishing agent and is added with a polyolefin type fine particle material. The novel semiconductor wafer polishing agent is capable of low brightness polishing to the back face of the wafer, sensor detection of the front and back faces of the wafer, and suppression of dust to be generated by chipping of the back face of the wafer, thereby to increase the yield of semiconductor devices. A polishing method using the polishing agent and a novel semiconductor wafer having a back face with an unconventional surface shape are also disclosed.

摘要翻译： 半导体晶片抛光剂主要含有含二氧化硅的抛光剂，并加入聚烯烃型细粒材料。 该新颖的半导体晶片抛光剂能够对晶片的背面进行低亮度抛光，对晶片的正面和背面进行传感器检测，并且抑制由于晶片背面的碎裂而产生的灰尘，由此 以提高半导体器件的产量。 还公开了使用抛光剂的抛光方法和具有非常规表面形状的背面的新型半导体晶片。

公开(公告)号：US5821167A

公开(公告)日：1998-10-13

申请号：US773379

申请日：1996-12-26

申请人： Teruaki Fukami ,  Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo

发明人： Teruaki Fukami ,  Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo

IPC分类号： B24B37/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/02024

摘要： A method of manufacturing semiconductor mirror wafers includes a double side primary mirror polishing step, a back side low brightness polishing step and a front side final mirror polishing step, wherein a silica containing polishing agent is used together with a polyolefin type fine particle material for the back side low brightness polishing. The method is capable of low brightness polishing of the back side, sensor detection of the front and back sides, suppression of generation of fine dust or particles from back side, thereby to increase the yield of semiconductor devices, manufacturing mirror wafers with higher flatness level, and higher productivity due to simplification of processes.

摘要翻译： 制造半导体镜面晶片的方法包括双面主镜抛光步骤，背面低亮度抛光步骤和前侧最终镜面抛光步骤，其中将含二氧化硅的抛光剂与聚烯烃型细颗粒材料一起用于 背面低亮度抛光。 该方法能够对背面进行低亮度抛光，前后传感器检测，抑制从背面产生细小灰尘或微粒，从而提高半导体器件的产量，制造具有较高平坦度水平的镜面晶片 ，并且由于工艺的简化而提高了生产率。

公开(公告)号：US5800725A

公开(公告)日：1998-09-01

申请号：US789798

申请日：1997-01-28

申请人： Tadahiro Kato ,  Hisashi Masumura ,  Hideo Kudo

发明人： Tadahiro Kato ,  Hisashi Masumura ,  Hideo Kudo

IPC分类号： H01L21/306 ,  H01L21/302 ,  H01L21/304 ,  B44C1/22 ,  C03C15/00

CPC分类号： H01L21/02008

摘要： A method of manufacturing semiconductor wafers includes a double side primary polishing step, a back side etching step and a single side mirror polishing step. This method is capable of easy sensor detection of the front and back sides of the wafer, wafer processing of higher flatness level by forming etched rough surface at the back side of the double side polished wafer and setting up of wafer manufacturing process including a double side polishing step.

摘要翻译： 制造半导体晶片的方法包括双面一次抛光步骤，背面蚀刻步骤和单面镜面抛光步骤。 该方法能够容易地传感器检测晶片的正面和背面，通过在双面抛光晶片的背面形成蚀刻的粗糙表面并设置包括双面的晶片制造工艺，从而提高平坦度的晶片处理 抛光步骤

公开(公告)号：US5827779A

公开(公告)日：1998-10-27

申请号：US684000

申请日：1996-07-19

申请人： Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo

发明人： Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo

IPC分类号： B24B37/07 ,  B24B37/20 ,  B24B37/24 ,  C30B33/00 ,  H01L21/304 ,  H01L21/44

CPC分类号： C30B33/00

摘要： A method of manufacturing semiconductor mirror wafers includes a double side primary mirror polishing step and a single side final mirror polishing step. The method having the double side mirror polishing step is capable of higher flatness level wafer processing, suppression of fine dust or particles, thereby to increase the yield of semiconductor devices, higher productivity due to simplification of processes, higher quality processing with lower manufacturing cost than conventional methods.

摘要翻译： 制造半导体镜面晶片的方法包括双面主镜抛光步骤和单面最终镜面抛光步骤。 具有双面镜研磨工序的方法能够进行更高的平坦度晶片处理，抑制细粉尘或微粒，从而提高半导体器件的成品率，由于工艺简单，生产率提高，制造成本低，质量更高，制造成本低 常规方法。

公开(公告)号：US5827395A

公开(公告)日：1998-10-27

申请号：US455519

申请日：1995-05-31

申请人： Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo

发明人： Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo

IPC分类号： B24B37/20 ,  B24B37/24 ,  B24D13/14 ,  H01L21/304 ,  C23F1/02

CPC分类号： B24B37/24

摘要： A polishing pad composed of a rigid polyurethane added with CaCO.sub.3 particles is able to provide polished wafers having a surface roughness which is comparable to that attained by the conventional final polishing process. Even when polishing is achieved under a high load condition to improve the productivity, the polished wafers are free from deformation, such as concaving, and have an excellent flatness.

摘要翻译： 由添加有CaCO 3颗粒的刚性聚氨酯组成的抛光垫能够提供具有与通过常规最终抛光工艺获得的表面粗糙度相当的表面粗糙度的抛光晶片。 即使在高负载条件下进行抛光以提高生产率的情况下，抛光的晶片也不会变形，例如凹陷，并且具有优异的平坦度。

公开(公告)号：US5942445A

公开(公告)日：1999-08-24

申请号：US823746

申请日：1997-03-25

申请人： Tadahiro Kato ,  Hisashi Masumura ,  Sadayuki Okuni ,  Hideo Kudo

发明人： Tadahiro Kato ,  Hisashi Masumura ,  Sadayuki Okuni ,  Hideo Kudo

IPC分类号： B24B1/00 ,  C30B33/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/02013 ,  C30B33/00 ,  H01L21/02008 ,  H01L21/02019

摘要： According to the invention, the flatness and quality can be improved while simplifying the process even when large size wafers of 200 to 300 mm or above are processed. Basic steps involved are a slicing step E for obtaining thin disc-shape wafers by slicing, a chamfering step F for chamfering the sliced wafers, a flattening step G for flattening the chamfered wafers, an alkali etching step H for removing process damage layers from the flattened wafers, and a double-side polishing step K of simultaneously polishing the two sides of the etched wafers. If necessary, a plasma etching step is used in lieu of the flattening and etching steps G and H respectively.

摘要翻译： 根据本发明，即使处理200〜300mm以上的大尺寸晶片，也能够在简化工序的同时提高平坦度和质量。 所涉及的基本步骤是通过切片获得薄盘形晶片的切片步骤E，用于倒角切片晶片的倒角步骤F，用于使倒角晶片平坦化的平坦化步骤G，用于从工艺损伤层去除工艺损伤层的碱蚀刻步骤H 平坦化的晶片，以及双面研磨工序K，同时抛光被蚀刻的晶片的两面。 如果需要，分别使用等离子体蚀刻步骤代替平坦化和蚀刻步骤G和H.