公开(公告)号：US5325244A

公开(公告)日：1994-06-28

申请号：US843265

申请日：1992-02-28

申请人： Hisashi Takano ,  Kyo Akagi ,  Mikio Suzuki ,  Yoshibumi Matsuda ,  Takeshi Nakao ,  Yoshinori Miyamura ,  Fumio Kugiya ,  Masaaki Futamoto ,  Hideki Sawaguchi ,  Nobuyuki Inaba ,  Takayuki Munemoto ,  Kenji Mori ,  Hirotsugu Fukuoka ,  Tokuho Takagaki

发明人： Hisashi Takano ,  Kyo Akagi ,  Mikio Suzuki ,  Yoshibumi Matsuda ,  Takeshi Nakao ,  Yoshinori Miyamura ,  Fumio Kugiya ,  Masaaki Futamoto ,  Hideki Sawaguchi ,  Nobuyuki Inaba ,  Takayuki Munemoto ,  Kenji Mori ,  Hirotsugu Fukuoka ,  Tokuho Takagaki

IPC分类号： G11B5/02 ,  G11B5/00 ,  G11B5/39 ,  G11B5/55 ,  G11B5/596 ,  G11B5/60 ,  G11B5/65 ,  G11B5/66 ,  G11B5/74 ,  G11B5/82 ,  G11B13/04 ,  G11B21/10 ,  G11B5/58

CPC分类号： G11B5/3967 ,  G11B5/00 ,  G11B5/5552 ,  G11B5/59677 ,  G11B5/6005 ,  G11B5/74

摘要： A magnetic recording data storage system includes a magnetic recording medium having pits formed therein, the pits defining recording tracks on the magnetic recording medium and being arranged in a staggered manner relative to respective center lines of the recording tracks, a magnetic head including an inductive element for recording data on the recording tracks and a magnetoresistive element for reproducing data from the recording tracks, one of (1) a unit for magnetically producing a signal from the pits, and (2) an optical unit for optically producing a signal from the pits, the optical unit including a laser for illuminating the pits, servo means for positioning the head on the recording tracks based on the signal produced from the pits, the servo means including a dual-stage actuator including a rough movement portion and a fine movement portion.

摘要翻译： 磁记录数据存储系统包括其中形成有凹坑的磁记录介质，凹坑在磁记录介质上定义记录轨道并相对于记录轨道的相应中心线以交错方式布置，磁头包括电感元件 用于在记录磁道上记录数据和用于从记录磁道再现数据的磁阻元件，（1）用于从凹坑中产生信号的单元，以及（2）用于光学地产生来自凹坑的信号的光学单元 所述光学单元包括用于照亮所述凹坑的激光器，用于基于由所述凹坑产生的信号将所述磁头定位在所述记录磁道上的伺服装置，所述伺服装置包括双级致动器，所述双级致动器包括粗略运动部分和精细运动部分 。

公开(公告)号：US07054120B2

公开(公告)日：2006-05-30

申请号：US10700500

申请日：2003-11-05

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US06278593B1

公开(公告)日：2001-08-21

申请号：US09468309

申请日：1999-12-21

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B539

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semicondutor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件具有至少形成在相对的磁体上的端子 层，使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US20060152862A1

公开(公告)日：2006-07-13

申请号：US11371244

申请日：2006-03-09

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 从而电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US5736235A

公开(公告)日：1998-04-07

申请号：US740708

申请日：1991-08-06

申请人： Yoshibumi Matsuda ,  Masaaki Futamoto ,  Yoshinori Miyamura ,  Tokuho Takagaki ,  Hisashi Takano ,  Fumio Kugiya ,  Takeshi Nakao ,  Kyo Akagi ,  Mikio Suzuki ,  Hirotsugu Fukuoka ,  Takayuki Munemoto

发明人： Yoshibumi Matsuda ,  Masaaki Futamoto ,  Yoshinori Miyamura ,  Tokuho Takagaki ,  Hisashi Takano ,  Fumio Kugiya ,  Takeshi Nakao ,  Kyo Akagi ,  Mikio Suzuki ,  Hirotsugu Fukuoka ,  Takayuki Munemoto

IPC分类号： G11B5/64 ,  G11B5/65 ,  G11B5/66 ,  G11B5/73 ,  G11B5/738 ,  G11B5/85 ,  G11B5/851

CPC分类号： G11B5/66 ,  G11B5/64 ,  Y10S428/90 ,  Y10T428/24942 ,  Y10T428/2495

摘要： A magnetic recording medium, its fabrication method, and a magnetic recording apparatus in which both saturation induction and coercive force of a magnetic film is made high as they are near a surface of the recording medium. A high density information recording can be made higher than 50 kFCI in linear recording density even for spacing around 0.2 .mu.m.

摘要翻译： 一种磁记录介质，其制造方法和磁记录装置，其中磁记录介质的表面附近磁饱和感应和磁性膜的矫顽力均较高。 即使对于0.2μm左右的间隔，高密度信息记录也可以使线性记录密度高于50kFCI。

公开(公告)号：US07159303B2

公开(公告)日：2007-01-09

申请号：US11371244

申请日：2006-03-09

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B5/127

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US06687099B2

公开(公告)日：2004-02-03

申请号：US10270120

申请日：2002-10-15

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B539

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得构成磁阻效应元件的所有磁性层基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US06483677B2

公开(公告)日：2002-11-19

申请号：US09931897

申请日：2001-08-20

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B539

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US6011674A

公开(公告)日：2000-01-04

申请号：US626333

申请日：1996-04-02

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-denisity recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，可以极大地降低与磁记录介质的记录表面相对的磁性层的面积，因此可以通过具有一个磁记录介质的电流来检测来自高耐度记录磁记录介质的非常狭窄区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US5726837A

公开(公告)日：1998-03-10

申请号：US328090

申请日：1994-10-24

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。