公开(公告)号：US09112035B2

公开(公告)日：2015-08-18

申请号：US13410872

申请日：2012-03-02

申请人： Hisashi Yamada ,  Masahiko Hata ,  Masafumi Yokoyama ,  Mitsuru Takenaka ,  Shinichi Takagi ,  Tetsuji Yasuda ,  Hideki Takagi ,  Yuji Urabe

发明人： Hisashi Yamada ,  Masahiko Hata ,  Masafumi Yokoyama ,  Mitsuru Takenaka ,  Shinichi Takagi ,  Tetsuji Yasuda ,  Hideki Takagi ,  Yuji Urabe

IPC分类号： H01L29/02 ,  H01L29/786 ,  H01L21/762 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

CPC分类号： H01L29/78681 ,  H01L21/76251 ,  H01L21/76256 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66742

摘要： A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth.

摘要翻译： 半导体衬底包括衬底，绝缘层和半导体层。 绝缘层在衬底上并与衬底接触。 绝缘层包括无定形金属氧化物和无定形金属氮化物中的至少一种。 半导体层在绝缘层上方并与之接触。 半导体层通过晶体生长形成。

公开(公告)号：US08779471B2

公开(公告)日：2014-07-15

申请号：US13413216

申请日：2012-03-06

申请人： Masahiko Hata ,  Hisashi Yamada ,  Noboru Fukuhara ,  Shinichi Takagi ,  Mitsuru Takenaka ,  Masafumi Yokoyama ,  Tetsuji Yasuda ,  Yuji Urabe ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii

发明人： Masahiko Hata ,  Hisashi Yamada ,  Noboru Fukuhara ,  Shinichi Takagi ,  Mitsuru Takenaka ,  Masafumi Yokoyama ,  Tetsuji Yasuda ,  Yuji Urabe ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii

IPC分类号： H01L29/66

CPC分类号： H01L29/7786 ,  H01L21/26553 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66318 ,  H01L29/66522

摘要： Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0

摘要翻译： 提供了一种场效应晶体管，其包括栅极绝缘层，与栅极绝缘层接触的第一半导体晶体层和第二半导体晶体层与第一半导体晶体层的晶格匹配或伪晶格匹配。 这里，栅绝缘层，第一半导体晶体层和第二半导体晶体层按栅极绝缘层，第一半导体晶体层和第二半导体晶体层的顺序排列，第一半导体晶体层被制成 的In x Ga 1-x As y 1 P 1-y 1（0

公开(公告)号：US20120228673A1

公开(公告)日：2012-09-13

申请号：US13413216

申请日：2012-03-06

申请人： Masahiko HATA ,  Hisashi Yamada ,  Noboru Fukuhara ,  Shinichi Takagi ,  Mitsuru Takenaka ,  Masafumi Yokoyama ,  Tetsuji Yasuda ,  Yuji Urabe ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii

发明人： Masahiko HATA ,  Hisashi Yamada ,  Noboru Fukuhara ,  Shinichi Takagi ,  Mitsuru Takenaka ,  Masafumi Yokoyama ,  Tetsuji Yasuda ,  Yuji Urabe ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/20

CPC分类号： H01L29/7786 ,  H01L21/26553 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66318 ,  H01L29/66522

摘要： Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0

摘要翻译： 提供了一种场效应晶体管，其包括栅极绝缘层，与栅极绝缘层接触的第一半导体晶体层和第二半导体晶体层与第一半导体晶体层的晶格匹配或伪晶格匹配。 这里，栅绝缘层，第一半导体晶体层和第二半导体晶体层按栅极绝缘层，第一半导体晶体层和第二半导体晶体层的顺序排列，第一半导体晶体层被制成 的In x Ga 1-x As y 1 P 1-y 1（0

公开(公告)号：US20110233689A1

公开(公告)日：2011-09-29

申请号：US13133092

申请日：2009-11-27

申请人： Masahiko Hata ,  Noboru Fukuhara ,  Hisashi Yamada ,  Shinichi Takagi ,  Masakazu Sugiyama ,  Mitsuru Takenaka ,  Tetsuji Yasuda ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii ,  Akihiro Ohtake ,  Jun Nara

发明人： Masahiko Hata ,  Noboru Fukuhara ,  Hisashi Yamada ,  Shinichi Takagi ,  Masakazu Sugiyama ,  Mitsuru Takenaka ,  Tetsuji Yasuda ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii ,  Akihiro Ohtake ,  Jun Nara

IPC分类号： H01L29/78 ,  H01L29/04 ,  H01L21/336 ,  H01L29/20 ,  H01L21/20

CPC分类号： H01L29/045 ,  H01L29/20 ,  H01L29/7833 ,  H01L29/78681

摘要： There is provided a semiconductor device that includes a III-V Group compound semiconductor having a zinc-blende-type crystal structure, an insulating material being in contact with the (111) plane of the III-V Group compound semiconductor, a plane of the III-V Group compound semiconductor equivalent to the (111) plane, or a plane that has an off angle with respect to the (111) plane or the plane equivalent to the (111) plane, and an MIS-type electrode being in contact with the insulating material and including a metal conductive material.

摘要翻译： 提供了一种半导体器件，其包括具有锌闪光体型晶体结构的III-V族化合物半导体，与III-V族化合物半导体的（111）面接触的绝缘材料， 相当于（111）面的III-V族化合物半导体，或相对于（111）面或与（111）面相当的面的偏角的平面，和与MIS接触的MIS型电极 具有绝缘材料并且包括金属导电材料。

公开(公告)号：US07923752B2

公开(公告)日：2011-04-12

申请号：US10046739

申请日：2002-01-17

申请人： Hisashi Yamada ,  Noboru Fukuhara ,  Masahiko Hata

发明人： Hisashi Yamada ,  Noboru Fukuhara ,  Masahiko Hata

IPC分类号： H01L29/735 ,  H01L29/739

CPC分类号： H01L29/66318 ,  H01L29/205

摘要： A thin-film crystal wafer having a pn junction includes a first crystal layer of p GaAs, a second crystal layer of n InxAlyGa1−x−yP, the first and second crystal layers being lattice-matched layers that form a heterojunction, and a control layer of a thin-film of InxAlyGa1−x−yP differing in composition from the n InxAlyGa1−x−yP of the second crystal layer is formed at the interface of the heterojunction. The control layer enables the energy discontinuity at the interface of the InxAlyGa1−x−yP/GaAs heterojunction to be set within a relatively broad range of values and thus enables the current amplification factor and the offset voltage to be matched to specification values by varying the energy band gap at the heterojunction.

摘要翻译： 具有pn结的薄膜晶体晶片包括p GaAs的第一晶体层，n In x Al y Ga 1-x-y P的第二晶体层，第一和第二晶体层是形成异质结的晶格匹配层，以及控制 在异质结的界面处形成与第二晶体层的n In x Al y Ga 1-x-y P的组成不同的In x Al y Ga 1-x-y P的薄膜层。 控制层使InxAlyGa1-x-yP / GaAs异质结的界面处的能量不连续性设定在相对宽的值范围内，从而使电流放大系数和偏移电压能够通过改变 异质结能带隙。

公开(公告)号：US20110227042A1

公开(公告)日：2011-09-22

申请号：US13131523

申请日：2009-11-26

申请人： Tomoyuki Takada ,  Masahiko Hata ,  Hisashi Yamada

发明人： Tomoyuki Takada ,  Masahiko Hata ,  Hisashi Yamada

IPC分类号： H01L29/165 ,  H01L21/268 ,  G05D23/00

CPC分类号： H01L21/02532 ,  H01L21/02667 ,  H01L21/2686 ,  H01L21/67115 ,  H01L29/78

摘要： There is provided a method of producing a semiconductor wafer by thermally processing a base water having a portion to be thermally processed that is to be thermally processed. The method comprises a step of providing, on the base wafer, a portion to be heated that generates heat through absorption of an electromagnetic wave and selectively heats the portion to be thermally processed, a step of applying an electromagnetic wave to the base wafer, and a step of lowering the lattice defect density of the portion to he thermally processed, by means of the heat generated by the portion to be heated through the absorption of the electromagnetic wave.

摘要翻译： 提供了通过热处理具有待热处理部分的基础水来制造半导体晶片的方法。 该方法包括在基底晶片上提供通过吸收电磁波产生热并选择性地加热待热处理的部分的加热部分，向基底晶片施加电磁波的步骤，以及 借助于被加热部分通过吸收电磁波而产生的热，降低热处理部分的晶格缺陷密度的步骤。

公开(公告)号：US08709904B2

公开(公告)日：2014-04-29

申请号：US13131523

申请日：2009-11-26

申请人： Tomoyuki Takada ,  Masahiko Hata ,  Hisashi Yamada

发明人： Tomoyuki Takada ,  Masahiko Hata ,  Hisashi Yamada

IPC分类号： H01L21/331 ,  H01L21/336 ,  H01L21/46 ,  H01L21/78 ,  H01L21/26

CPC分类号： H01L21/02532 ,  H01L21/02667 ,  H01L21/2686 ,  H01L21/67115 ,  H01L29/78

摘要： There is provided a method of producing a semiconductor wafer by thermally processing a base wafer having a portion to be thermally processed that is to be thermally processed. The method comprises a step of providing, on the base wafer, a portion to be heated that generates heat through absorption of an electromagnetic wave and selectively heats the portion to be thermally processed, a step of applying an electromagnetic wave to the base wafer, and a step of lowering the lattice defect density of the portion to be thermally processed, by means of the heat generated by the portion to be heated through the absorption of the electromagnetic wave.

摘要翻译： 提供了通过热处理具有待热处理部分的基底晶片来制造半导体晶片的方法。 该方法包括在基底晶片上提供通过吸收电磁波产生热并选择性地加热待热处理的部分的加热部分，向基底晶片施加电磁波的步骤，以及 借助于通过吸收电磁波而被加热部分产生的热量来降低待热处理部分的晶格缺陷密度的步骤。

公开(公告)号：US20110227199A1

公开(公告)日：2011-09-22

申请号：US13131513

申请日：2009-11-26

申请人： Masahiko Hata ,  Tomoyuki Takada ,  Hisashi Yamada

发明人： Masahiko Hata ,  Tomoyuki Takada ,  Hisashi Yamada

IPC分类号： H01L29/02 ,  H01L21/20 ,  H05B6/10

CPC分类号： H01L21/8258 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02667 ,  H01L21/2686 ,  H01L21/67115 ,  H01L21/84

摘要： There is provided a method of producing a semiconductor wafer by thermally processing a base wafer having a portion to be thermally processed that has a single-crystal layer and is to be subjected to thermal processing and a portion to be protected that is to be protected from heal, to be added during the thermal processing. The method comprises a step of forming, above the portion to be protected, a protective layer for protecting the portion to be protected from an electromagnetic wave to be applied to the base wafer, and a step of annealing the portion to be thermally processed, by applying the electromagnetic wave to the entire base wafer.

摘要翻译： 提供了一种制造半导体晶片的方法，该方法通过热处理具有单晶层的热处理部分的基底晶片，并进行热处理和被保护的部分， 在热处理过程中加入。 该方法包括在待保护部分上形成用于保护被保护部分免受施加到基底晶片的电磁波的保护层的步骤，以及将要热处理的部分退火的步骤，通过 将电磁波施加到整个基底晶片。

公开(公告)号：US08459886B2

公开(公告)日：2013-06-11

申请号：US11920743

申请日：2006-07-03

申请人： Ichirou Furuki ,  Takaaki Kase ,  Keiki Yamada ,  Hisashi Yamada ,  Makoto Sakuwa ,  Yoshihito Matsuura

发明人： Ichirou Furuki ,  Takaaki Kase ,  Keiki Yamada ,  Hisashi Yamada ,  Makoto Sakuwa ,  Yoshihito Matsuura

IPC分类号： B41J11/70 ,  B41J11/42 ,  B41M7/00

CPC分类号： B41J11/703 ,  B41J3/54 ,  B41J11/0015 ,  B41J11/42 ,  B41J11/70 ,  B41J13/0009 ,  B41J15/04 ,  B41J2202/33 ,  B41M7/0027 ,  B65H20/02 ,  B65H20/04

摘要： A first cutter 130 (cutting unit) is provided between a color recording unit 120 (the first printing unit) and an overcoat recording unit 140 (the second printing unit). A portion whereon color printing is completed by the color recording unit 120 of a recording paper 200 (printing medium) is cut off by the first cutter 130 and detached. An overcoat recording unit 140 performs an overcoat process on the detached recording paper (printing medium strip). In parallel with this, the color recording unit 120 performs next color printing on the recording paper 200. This makes it possible to reduce a printing time in a printing device including a plurality of printing processes without deteriorating printing quality. Further, an useless paper feeding is eliminated by optimally arranging the color recording unit 120, the first cutter 130, the overcoat recording unit 140, and the second cutter 160, etc. in accordance with a size of a printing area.

摘要翻译： 第一切割器130（切割单元）设置在彩色记录单元120（第一印刷单元）和外涂层记录单元140（第二印刷单元）之间。 由记录纸200（打印介质）的彩色记录单元120完成彩色打印的部分被第一切割器130切断并分离。 外涂层记录单元140对分离的记录纸（打印介质条）执行外涂层处理。 与此并行地，彩色记录单元120在记录纸张200上执行下一次彩色打印。这使得可以在不降低打印质量的情况下减少包括多个打印处理的打印装置中的打印时间。 此外，通过根据打印区域的尺寸优化布置彩色记录单元120，第一切割器130，外涂层记录单元140和第二切割器160等来消除无用的进纸。

公开(公告)号：USRE43967E1

公开(公告)日：2013-02-05

申请号：US12476434

申请日：2009-06-02

申请人： Tadashi Kobayashi ,  Hisashi Yamada

发明人： Tadashi Kobayashi ,  Hisashi Yamada

IPC分类号： B32B3/02

CPC分类号： B29C65/48 ,  B29C45/263 ,  B29C65/521 ,  B29C66/1122 ,  B29C66/452 ,  B29C66/71 ,  B29C66/73161 ,  B29C66/73341 ,  B29C66/73365 ,  B29C66/8322 ,  B29C2045/2653 ,  B29D17/005 ,  B29L2017/005 ,  G11B7/24 ,  G11B7/263 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/21 ,  Y10T428/31678 ,  B29K2023/06 ,  B29K2025/04 ,  B29K2025/06 ,  B29K2033/12 ,  B29K2055/02 ,  B29K2059/00 ,  B29K2063/00 ,  B29K2069/00

摘要： An information recording medium comprising a substrate having a recording surface provided with emboss pits or guiding grooves, a reflective film formed on the recording surface of the substrate, and a first protective film formed on the reflective film. This information recording medium is featured in that both sides of the information recording medium are constituted by a first surface provided with the protective film and by a second surface formed opposite to the first surface, and that an irradiated light beam is irradiated through the first surface, a recorded information being reproduced based on changes in light intensity of the reflected light beam. The distance between the recording surface of the substrate and the light incident surface is smaller than a thickness of the substrate, and a surface roughness “R” of the light incident surface meets a relationship represented by the following formula (1): R≦λ/(8n)   (1) wherein λ is a wavelength of the light beam, and n is a refractive index of the first protective film to a light having the wavelength λ.