公开(公告)号：US20210375978A1

公开(公告)日：2021-12-02

申请号：US17206566

申请日：2021-03-19

申请人： Hitachi, Ltd.

发明人： Kazuyuki Hozawa ,  Taiichi Takezaki

IPC分类号： H01L27/146 ,  G01T1/24

摘要： A technique capable of improving a performance of a semiconductor detector is provided. The semiconductor detector is made based on injection of an underfill into a gap between a first semiconductor chip and a second semiconductor chip in a flip-chip connection state, but the underfill is not formed in periphery of a connection structure connecting a reading electrode pad and a gate terminal through a bump electrode.

公开(公告)号：US11904356B2

公开(公告)日：2024-02-20

申请号：US16699185

申请日：2019-11-29

申请人： Hitachi, Ltd.

发明人： Taiichi Takezaki ,  Masakazu Kawano ,  Shuntaro Machida

IPC分类号： B06B1/02 ,  B81B3/00 ,  B81C1/00 ,  A61B8/12 ,  A61B8/00 ,  A61B5/00 ,  G01N29/24

CPC分类号： B06B1/0292 ,  A61B5/0095 ,  A61B8/12 ,  A61B8/4494 ,  B81B3/0021 ,  B81C1/00158 ,  G01N29/2406 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C2201/0105 ,  G01N2291/101

摘要： A highly-sensitive ultrasonic transducer with good yield is provided. The ultrasonic transducer includes a cavity layer, a pair of electrodes positioned above and below the cavity layer, insulating layers disposed above and below each of the pair of electrodes, and a filled hole that penetrates, in a vertical direction, at least a portion of the insulating layers positioned above the cavity layer. When the ultrasonic transducer is viewed from above, each electrode of the pair of electrodes includes, at a position that overlaps the embedded hole, a non-electrode region where the electrodes are not formed.

公开(公告)号：US11268937B2

公开(公告)日：2022-03-08

申请号：US16315676

申请日：2017-07-06

申请人： HITACHI, LTD.

发明人： Taiichi Takezaki ,  Shuntaro Machida ,  Daisuke Ryuzaki ,  Yasuhiro Yoshimura ,  Tatsuya Nagata ,  Naoaki Yamashita

IPC分类号： H04R19/00 ,  G01N29/24 ,  G01N29/265 ,  A61B8/00 ,  B06B1/02

摘要： A capacitive micromachined ultrasonic transducer 111A includes: a silicon substrate 101; an insulating film 102 formed over the silicon substrate 101; a lower electrode 103; insulating films 104 and 106; a cavity 105 constituted by a void formed in a portion of the insulating film 106; an upper electrode 107; insulating films 108 and 114; and a protective film 109. In addition, the insulating film 106, upper electrode 107, insulating film 108 and insulating film 114 above the cavity 105 configure a vibration film 110, and the protective film 109 above the vibration film 110 is divided into a plurality of isolated patterns regularly arranged with a gap 115 having a constant spacing formed therebetween.

公开(公告)号：US11417702B2

公开(公告)日：2022-08-16

申请号：US17206566

申请日：2021-03-19

申请人： Hitachi, Ltd.

发明人： Kazuyuki Hozawa ,  Taiichi Takezaki

IPC分类号： G01T1/24 ,  H01L27/146

摘要： A technique capable of improving a performance of a semiconductor detector is provided. The semiconductor detector is made based on injection of an underfill into a gap between a first semiconductor chip and a second semiconductor chip in a flip-chip connection state, but the underfill is not formed in periphery of a connection structure connecting a reading electrode pad and a gate terminal through a bump electrode.

公开(公告)号：US11376628B2

公开(公告)日：2022-07-05

申请号：US16534012

申请日：2019-08-07

申请人： Hitachi, Ltd.

发明人： Taiichi Takezaki ,  Hiroaki Hasegawa ,  Shuntaro Machida

IPC分类号： B06B1/02 ,  G01N29/24 ,  A61B8/00 ,  B06B1/06

摘要： A capacitive device includes a unit cell including a CMUT, and a transmission/reception plate for impedance matching which is provided above the unit cell via a connection portion, in which a membrane of the CMUT constituting the unit cell is connected to the transmission/reception plate via the connection portion having an area smaller than that of the transmission/reception plate. The area of the transmission/reception plate is desirably larger than the area of a hollow portion of the CMUT.

公开(公告)号：US09964635B2

公开(公告)日：2018-05-08

申请号：US14652039

申请日：2013-11-29

申请人： HITACHI, LTD.

发明人： Shuntaro Machida ,  Akifumi Sako ,  Taiichi Takezaki ,  Yasuhiro Yoshimura ,  Tatsuya Nagata ,  Naoaki Yamashita ,  Hiroki Tanaka

IPC分类号： G01S7/52 ,  A61B8/00 ,  B81C1/00 ,  B06B1/02 ,  G01S15/89

CPC分类号： G01S7/52079 ,  A61B8/4444 ,  A61B8/4494 ,  A61B8/54 ,  B06B1/0292 ,  B81C1/00301 ,  G01S15/8915

摘要： Both controlling damage when assembling an ultrasonic probe using a chip formed with a capacitive ultrasonic transducer and securing operational reliability are achieved. In a semiconductor substrate on which the capacitive ultrasonic transducer (CMUT) is formed on a first primary surface, a protective film is formed on the surface of the ultrasonic transducer which is formed on the first primary surface of the semiconductor substrate which is then thinned by polishing a second primary surface opposite to the first primary surface of the semiconductor substrate, an ultrasonic transducer chip is cutout of the semiconductor substrate, a sound absorbing material is provided on the surface opposite to the surface formed with the ultrasonic transducer, and the protective film formed on the surface of the ultrasonic transducer is removed.

公开(公告)号：US11331693B2

公开(公告)日：2022-05-17

申请号：US16361605

申请日：2019-03-22

申请人： Hitachi, Ltd.

发明人： Hiroaki Hasegawa ,  Kengo Imagawa ,  Shuntaro Machida ,  Taiichi Takezaki

IPC分类号： A61B8/00 ,  B06B1/02

摘要： Capacitors, each of which is electrically connected to a capacitor which is the cell of the CMUT mounted in a chip and is used as a DC block capacitor for protecting an amplifying circuit, are formed as many as plural aligned channels in the chip. The capacitor is an electrostatic capacitance element which is not vibrated acoustically.

公开(公告)号：US11317812B2

公开(公告)日：2022-05-03

申请号：US16223146

申请日：2018-12-18

申请人： HITACHI, LTD.

发明人： Shinsuke Onoe ,  Takahiro Matsuda ,  Yoshiho Seo ,  Satoshi Ouchi ,  Tomohiko Tanaka ,  Taiichi Takezaki ,  Ryo Imai

IPC分类号： G01S17/08 ,  A61B5/00 ,  G02B26/10 ,  H01L41/04 ,  H01L41/09 ,  G01N29/24 ,  G01S7/481 ,  G02B26/08 ,  G01S17/89

摘要： An optical scanning device includes: an optical scanning unit configured to repeatedly scan an irradiation destination of irradiation light to a predetermined trajectory; a light emission control unit configured to control light emission of the irradiation light to irradiate irradiation points to the predetermined trajectory; and a driving signal generation unit configured to generate a driving signal for driving the optical scanning unit, wherein the light emission control unit irradiates the irradiation points to the predetermined trajectory so that the irradiation points are substantially uniformly dispersed in a region in which a density of the irradiation points is relatively low in a region in which the irradiation light is irradiated.

公开(公告)号：US10751027B2

公开(公告)日：2020-08-25

申请号：US15325489

申请日：2015-06-19

申请人： Hitachi, Ltd.

发明人： Taiichi Takezaki ,  Shuntaro Machida ,  Daisuke Ryuzaki

IPC分类号： A61B8/00 ,  G01B17/02 ,  B06B1/02 ,  G01B21/04 ,  A61B8/08 ,  G01B7/14

摘要： Technique that enables precisely measuring cavity height and precisely grasping maximum transmission sound pressure in an ultrasonic probe is provided to the ultrasonic probe using CMUT. The ultrasonic probe according to the present invention includes plural cells each of which includes a lower electrode and an upper electrode arranged via a gap with respect to the lower electrode, and the plural cells include an ultrasonic cell the gap of which is void and which transmits/receives an ultrasonic wave and a reference cell the gap of which is filled with a conductive material. Electrostatic capacity of the ultrasonic cell and the reference cell is measured, parasitic capacity included in the measured electrostatic capacity as to the ultrasonic cell is corrected using parasitic capacity included in the measured electrostatic capacity as to the reference cell, and cavity height is calculated on the basis of the corrected electrostatic capacity of the ultrasonic cell.