公开(公告)号：US20210375978A1

公开(公告)日：2021-12-02

申请号：US17206566

申请日：2021-03-19

申请人： Hitachi, Ltd.

发明人： Kazuyuki Hozawa ,  Taiichi Takezaki

IPC分类号： H01L27/146 ,  G01T1/24

摘要： A technique capable of improving a performance of a semiconductor detector is provided. The semiconductor detector is made based on injection of an underfill into a gap between a first semiconductor chip and a second semiconductor chip in a flip-chip connection state, but the underfill is not formed in periphery of a connection structure connecting a reading electrode pad and a gate terminal through a bump electrode.

公开(公告)号：US20150187651A1

公开(公告)日：2015-07-02

申请号：US14638052

申请日：2015-03-04

申请人： Hitachi, Ltd.

发明人： Mayu Aoki ,  Kenichi Takeda ,  Kazuyuki Hozawa

IPC分类号： H01L21/82 ,  H01L21/52

CPC分类号： H01L21/82 ,  H01L21/52 ,  H01L21/76251 ,  H01L21/76898 ,  H01L23/3192 ,  H01L23/481 ,  H01L23/498 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/27 ,  H01L24/29 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/08145 ,  H01L2224/1145 ,  H01L2224/1148 ,  H01L2224/11602 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13686 ,  H01L2224/16145 ,  H01L2224/27416 ,  H01L2224/27618 ,  H01L2224/27848 ,  H01L2224/29005 ,  H01L2224/2919 ,  H01L2224/73104 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/83203 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/1461 ,  H01L2924/04941 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/206 ,  H01L2224/27 ,  H01L2224/11 ,  H01L2924/05442 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of manufacturing a semiconductor device includes: a step of forming an inorganic insulating film and an organic insulating film on one surface of a first substrate; a step of forming an opening portion by dry-etching a laminated film of them; a step of forming a bump electrode inside the opening portion; and a step (bonding step) of bonding the one surface of the first substrate having a bump electrode formed thereon and one surface of a second substrate having a bump electrode formed thereon to each other. A surface treatment on the inorganic insulating film is performed subsequent to the step of forming the opening portion but prior to the bonding step. By performing the surface treatment on the organic insulating film, connecting property between the substrates can be improved.

摘要翻译： 一种制造半导体器件的方法包括：在第一衬底的一个表面上形成无机绝缘膜和有机绝缘膜的步骤; 通过干法蚀刻它们的层压膜形成开口部的步骤; 在开口部内形成凸块电极的工序; 以及在其上形成有凸块电极的第一基板的一个表面和形成有凸块电极的第二基板的一个表面彼此接合的台阶（接合步骤）。 无机绝缘膜上的表面处理是在形成开口部分之后但是在接合步骤之前进行的。 通过对有机绝缘膜进行表面处理，能够提高基板间的连接性。

公开(公告)号：US20130285253A1

公开(公告)日：2013-10-31

申请号：US13837212

申请日：2013-03-15

申请人： HITACHI, LTD.

发明人： Mayu Aoki ,  Kenichi Takeda ,  Kazuyuki Hozawa

IPC分类号： H01L21/762 ,  H01L23/498

CPC分类号： H01L21/82 ,  H01L21/52 ,  H01L21/76251 ,  H01L21/76898 ,  H01L23/3192 ,  H01L23/481 ,  H01L23/498 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/27 ,  H01L24/29 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/08145 ,  H01L2224/1145 ,  H01L2224/1148 ,  H01L2224/11602 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13686 ,  H01L2224/16145 ,  H01L2224/27416 ,  H01L2224/27618 ,  H01L2224/27848 ,  H01L2224/29005 ,  H01L2224/2919 ,  H01L2224/73104 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/83203 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/1461 ,  H01L2924/04941 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/206 ,  H01L2224/27 ,  H01L2224/11 ,  H01L2924/05442 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of manufacturing a semiconductor device includes: a step of forming an inorganic insulating film and an organic insulating film on one surface of a first substrate; a step of forming an opening portion by dry-etching a laminated film of them; a step of forming a bump electrode inside the opening portion; and a step (bonding step) of bonding the one surface of the first substrate having a bump electrode formed thereon and one surface of a second substrate having a bump electrode formed thereon to each other. A surface treatment on the inorganic insulating film is performed subsequent to the step of forming the opening portion but prior to the bonding step. By performing the surface treatment on the organic insulating film, connecting property between the substrates can be improved.

摘要翻译： 一种制造半导体器件的方法包括：在第一衬底的一个表面上形成无机绝缘膜和有机绝缘膜的步骤; 通过干法蚀刻它们的层压膜形成开口部的步骤; 在开口部内形成凸块电极的工序; 以及在其上形成有凸块电极的第一基板的一个表面和形成有凸块电极的第二基板的一个表面彼此接合的台阶（接合步骤）。 无机绝缘膜上的表面处理是在形成开口部分之后但是在接合步骤之前进行的。 通过对有机绝缘膜进行表面处理，能够提高基板间的连接性。

公开(公告)号：US11417702B2

公开(公告)日：2022-08-16

申请号：US17206566

申请日：2021-03-19

申请人： Hitachi, Ltd.

发明人： Kazuyuki Hozawa ,  Taiichi Takezaki

IPC分类号： G01T1/24 ,  H01L27/146

摘要： A technique capable of improving a performance of a semiconductor detector is provided. The semiconductor detector is made based on injection of an underfill into a gap between a first semiconductor chip and a second semiconductor chip in a flip-chip connection state, but the underfill is not formed in periphery of a connection structure connecting a reading electrode pad and a gate terminal through a bump electrode.

公开(公告)号：US09153495B2

公开(公告)日：2015-10-06

申请号：US14638052

申请日：2015-03-04

申请人： Hitachi, Ltd.

发明人： Mayu Aoki ,  Kenichi Takeda ,  Kazuyuki Hozawa

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/82 ,  H01L21/52

CPC分类号： H01L21/82 ,  H01L21/52 ,  H01L21/76251 ,  H01L21/76898 ,  H01L23/3192 ,  H01L23/481 ,  H01L23/498 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/27 ,  H01L24/29 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/08145 ,  H01L2224/1145 ,  H01L2224/1148 ,  H01L2224/11602 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13686 ,  H01L2224/16145 ,  H01L2224/27416 ,  H01L2224/27618 ,  H01L2224/27848 ,  H01L2224/29005 ,  H01L2224/2919 ,  H01L2224/73104 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/83203 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/1461 ,  H01L2924/04941 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/206 ,  H01L2224/27 ,  H01L2224/11 ,  H01L2924/05442 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of manufacturing a semiconductor device includes: a step of forming an inorganic insulating film and an organic insulating film on one surface of a first substrate; a step of forming an opening portion by dry-etching a laminated film of them; a step of forming a bump electrode inside the opening portion; and a step (bonding step) of bonding the one surface of the first substrate having a bump electrode formed thereon and one surface of a second substrate having a bump electrode formed thereon to each other. A surface treatment on the inorganic insulating film is performed subsequent to the step of forming the opening portion but prior to the bonding step. By performing the surface treatment on the organic insulating film, connecting property between the substrates can be improved.

摘要翻译： 一种制造半导体器件的方法包括：在第一衬底的一个表面上形成无机绝缘膜和有机绝缘膜的步骤; 通过干法蚀刻它们的层压膜形成开口部的步骤; 在开口部内形成凸块电极的工序; 以及在其上形成有凸块电极的第一基板的一个表面和形成有凸块电极的第二基板的一个表面彼此接合的台阶（接合步骤）。 无机绝缘膜上的表面处理是在形成开口部分之后但是在接合步骤之前进行的。 通过对有机绝缘膜进行表面处理，能够提高基板间的连接性。