公开(公告)号：US20190088453A1

公开(公告)日：2019-03-21

申请号：US15902799

申请日：2018-02-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yasushi SONODA ,  Naoki YASUI ,  Motohiro TANAKA ,  Koichi YAMAMOTO

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber, a radio frequency power source, and a magnetic-field generation unit. In the processing chamber, a sample is subjected to plasma processing. The radio frequency power source supplies radio frequency power for a microwave. The magnetic-field generation unit forms a magnetic field for generating plasma by an interaction with the microwave. The magnetic-field generation unit includes a first power source and a second power source. The first power source causes a current to flow in a first magnetic-field forming coil configured to forma magnetic field in the processing chamber. The second power source causes a current to flow in a second magnetic-field forming coil configured to form a magnetic field in the processing chamber. Sensitivity for magnetic-field changing by the first magnetic-field forming coil is higher than sensitivity for magnetic-field changing by the second magnetic-field forming coil. A response time constant of the first power source is smaller than a response time constant of the second power source.

公开(公告)号：US20160133530A1

公开(公告)日：2016-05-12

申请号：US14625931

申请日：2015-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Yasushi SONODA ,  Motohiro TANAKA

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber configured to perform a plasma processing on a sample, a first radio frequency power supply configured to generate a plasma, a sample stage configured to place the sample thereon, a second radio frequency power supply configured to supply a radio frequency power to the sample stage, a mass flow controller configured to supply a gas into the processing chamber, and a control device configured to change the radio frequency power supplied from the first radio frequency power supply or the second radio frequency power supply based on a change of plasma impedance after a first gas is switched to a second gas.

Abstract translation: 一种等离子体处理装置，包括：处理室，被配置为对样品进行等离子体处理;被配置为产生等离子体的第一射频电源;被配置为将样品放置在其上的样品台;第二射频电源， 对样品台的射频电力，被配置为将气体供应到处理室中的质量流量控制器，以及控制装置，被配置为基于从第一射频电源或第二射频电源提供的射频功率，基于 将第一气体切换到第二气体之后的等离子体阻抗的变化。

公开(公告)号：US20150024599A1

公开(公告)日：2015-01-22

申请号：US14509935

申请日：2014-10-08

Applicant: Hitachi High-Technologies Corporation

Inventor： Masahiro SUMIYA ,  Motohiro TANAKA

IPC: H01L21/3065

CPC classification number: H01L21/0206 ,  H01J37/32192 ,  H01J37/3266 ,  H01L21/02002 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02334 ,  H01L21/28123 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67259

Abstract: In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce the pressure therein, and introduction holes arranged above said sample stage to admit process gas into the processing chamber, the wafer having its top surface mounted with a film structure and the film structure being etched by using plasma formed by using the process gas, the film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before the wafer is mounted on the sample stage and the poly-silicon film underlying the mask film is etched, plasma is formed inside the processing chamber to cover the surface of members inside the processing chamber with a coating film containing a component of Si.

Abstract translation: 在包括设置在真空室中的处理室的等离子体处理装置中，设置在处理室下方并且其顶表面上安装有待加工晶片的样品台，用于抽出处理室内部的真空减压单元 为了降低其中的压力，以及设置在所述样品台上方的引入孔，以允许处理气体进入处理室，晶片的顶表面安装有膜结构，并且通过使用通过使用处理气体形成的等离子体蚀刻膜结构， 膜结构通过在基板上从顶部到底部依次层叠抗蚀剂膜或掩模膜，多晶硅膜和绝缘膜，并且在晶片安装在样品台上之前和多晶硅 蚀刻掩模膜下面的膜，在处理室内部形成等离子体，以覆盖处理室内的部件的表面 含有Si成分的膜。

公开(公告)号：US20140053983A1

公开(公告)日：2014-02-27

申请号：US14046773

申请日：2013-10-04

Applicant: Hitachi High-Technologies Corporation

Inventor： Masahiro SUMIYA ,  Motohiro TANAKA

IPC: H01L21/02

CPC classification number: H01L21/0206 ,  H01J37/32192 ,  H01J37/3266 ,  H01L21/02002 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02334 ,  H01L21/28123 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67259

Abstract: In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce the pressure therein, and introduction holes arranged above said sample stage to admit process gas into the processing chamber, the wafer having its top surface mounted with a film structure and the film structure being etched by using plasma formed by using the process gas, the film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before the wafer is mounted on the sample stage and the poly-silicon film underlying the mask film is etched, plasma is formed inside the processing chamber to cover the surface of members inside the processing chamber with a coating film containing a component of Si.

Abstract translation: 在包括设置在真空室中的处理室的等离子体处理装置中，设置在处理室下方并且其顶表面上安装有待加工晶片的样品台，用于抽出处理室内部的真空减压单元 为了降低其中的压力，以及设置在所述样品台上方的引入孔，以允许处理气体进入处理室，晶片的顶表面安装有膜结构，并且通过使用通过使用处理气体形成的等离子体蚀刻膜结构， 膜结构通过在基板上从顶部到底部依次层叠抗蚀剂膜或掩模膜，多晶硅膜和绝缘膜，并且在晶片安装在样品台上之前和多晶硅 蚀刻掩模膜下面的膜，在处理室内部形成等离子体，以覆盖处理室内的部件的表面 含有Si成分的膜。

公开(公告)号：US20180277402A1

公开(公告)日：2018-09-27

申请号：US15719149

申请日：2017-09-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masatoshi KAWAKAMI ,  Motohiro TANAKA ,  Yasushi SONODA ,  Kohei SATO ,  Naoki YASUI

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32449 ,  H01J37/32715 ,  H01J2237/334

Abstract: Provided is a plasma processing apparatus or method in which a procedure containing processing steps of supplying a predetermined amount of processing gas into a processing chamber disposed in a vacuum vessel through a gas supply unit, and processing a wafer placed on a sample table disposed in the processing chamber by generating plasma in the processing chamber using the processing gas supplied on each different condition. The procedure includes a first transition step of adjusting and supplying the rare gas to make a pressure of the rare gas equal to a condition of the processing gas used in the former processing step, and a second transition step of adjusting and supplying the rare gas after the first transition step such that a pressure and a flow rate of the rare gas come to be equal to a condition of the processing gas used in the later processing step.