-
公开(公告)号：US09972776B2
公开(公告)日：2018-05-15
申请号：US15260351
申请日：2016-09-09
CPC分类号： H01L43/12 , B08B7/0035 , B08B9/08 , H01J37/321 , H01J37/3211 , H01J37/32165 , H01J37/32651 , H01J37/32853 , H01J37/32862 , H01J2237/334 , H01J2237/335 , H01L43/08 , H01L43/10
摘要： According to one embodiment of the present invention, there is provided a plasma processing method for forming a pattern of a mask on a laminated film of a magnetic film and a metal oxide film, and the plasma processing method includes: plasma etching the magnetic film in a chamber; and after the plasma etching, plasma cleaning the chamber, wherein the plasma cleaning performs first plasma cleaning of plasma cleaning using a gas mixture of chlorine element-containing gas and boron trichloride gas, and after the first plasma cleaning, second plasma cleaning of removing boron remaining in the chamber.
-
公开(公告)号：US20160133834A1
公开(公告)日：2016-05-12
申请号：US14995897
申请日：2016-01-14
IPC分类号： H01L43/12
摘要： In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.
-
公开(公告)号：US09269892B2
公开(公告)日：2016-02-23
申请号：US14181537
申请日：2014-02-14
摘要： In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.
摘要翻译： 在等离子体蚀刻等离子体蚀刻具有第一磁性膜的样品的等离子体蚀刻方法中，设置在第一磁性膜上方的第二磁性膜，设置在第一磁性膜和第二磁性膜之间的金属氧化物膜，设置第二金属膜 在所述第二磁性膜上形成上部电极，以及设置在所述第一磁性膜的下方并形成下部电极的第一金属膜，所述等离子体蚀刻方法包括以下步骤：蚀刻所述第一磁性膜，所述金属氧化物 薄膜和第二磁性薄膜通过使用一氧化碳气体; 以及在第一工序之后通过使用氢气和惰性气体的混合气体来蚀刻样品的第二工序。 在这种情况下，第一金属膜是其中含有钽的膜。
-
公开(公告)号：US09680090B2
公开(公告)日：2017-06-13
申请号：US14995897
申请日：2016-01-14
摘要： In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.
-
公开(公告)号：US09378758B2
公开(公告)日：2016-06-28
申请号：US14248376
申请日：2014-04-09
CPC分类号： G11B5/3163 , C23F4/00 , G01R33/098 , G11B5/1278 , G11B5/3909
摘要： The present invention provides, in a plasma etching method for plasma-etching a magnetic film, a plasma etching method that allows a desired etching depth to be obtained regardless of the opening size of a mask. The present invention is, in a plasma etching method for plasma-etching a magnetic film by using a tantalum film as a mask, characterized by including: a first process to plasma-etch the magnetic film to a desired depth by using a mixed gas of an ammonia gas and a helium gas; and a second process, after the first process, to plasma-etch the magnetic film etched to the prescribed depth by using a mixed gas of an ammonia gas and a gas containing the oxygen element or a mixed gas of an ammonia gas and a gas containing a hydroxyl group.
摘要翻译： 本发明在等离子体蚀刻磁性膜的等离子体蚀刻方法中，提供了能够获得期望的蚀刻深度的等离子体蚀刻方法，而不管掩模的开口尺寸如何。 本发明是通过使用钽膜作为掩模等离子体蚀刻磁性膜的等离子体蚀刻方法，其特征在于包括：通过使用混合气体等离子体刻蚀磁性膜至所需深度的第一工艺 氨气和氦气; 以及第二工序，在第一工序之后，通过使用氨气和含有氧元素的气体或氨气和含有气体的气体的混合气体，将蚀刻到规定深度的磁性膜进行等离子体蚀刻 羟基。
-
公开(公告)号：US09281470B2
公开(公告)日：2016-03-08
申请号：US14447614
申请日：2014-07-31
发明人： Takahiro Abe , Naohiro Yamamoto , Makoto Suyama , Masato Ishimaru
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , H01J37/321 , H01J37/32651
摘要： In a plasma processing method for plasma-etching magnetic layer by using a plasma processing device including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, a deposit layer is formed on the plasma-etched magnetic layer by plasma processing while applying radio-frequency voltage to the Faraday shield after the magnetic layer is plasma-etched.
摘要翻译： 在通过使用等离子体处理装置的等离子体处理方法中等离子体处理方法，该等离子体处理装置包括其中样品被等离子体处理的处理室，用于密封处理室的上部的密封的电介质窗口，设置在上面的电感耦合天线 电介质窗口，用于向电感耦合天线提供射频电力的射频电源和设置在感应耦合天线和电介质窗口之间的法拉第屏蔽，沉积层通过等离子体刻蚀的磁性层上形成 等离子体处理，同时在等离子体刻蚀了磁性层之后，向法拉第屏蔽层施加射频电压。
-
公开(公告)号：US20150349245A1
公开(公告)日：2015-12-03
申请号：US14447614
申请日：2014-07-31
发明人： Takahiro Abe , Naohiro Yamamoto , Makoto Suyama , Masato Ishimaru
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , H01J37/321 , H01J37/32651
摘要： In a plasma processing method for plasma-etching magnetic layer by using a plasma processing device including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, a deposit layer is formed on the plasma-etched magnetic layer by plasma processing while applying radio-frequency voltage to the Faraday shield after the magnetic layer is plasma-etched.
摘要翻译： 在通过使用等离子体处理装置的等离子体处理方法中等离子体处理方法，该等离子体处理装置包括其中样品被等离子体处理的处理室，用于密封处理室的上部的密封的电介质窗口，设置在上面的电感耦合天线 电介质窗口，用于向电感耦合天线提供射频电力的射频电源和设置在感应耦合天线和电介质窗口之间的法拉第屏蔽，沉积层通过等离子体刻蚀的磁性层上形成 等离子体处理，同时在等离子体刻蚀了磁性层之后，向法拉第屏蔽层施加射频电压。
-
公开(公告)号：US09017564B2
公开(公告)日：2015-04-28
申请号：US13761235
申请日：2013-02-07
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/302 , H01L21/461 , G11C11/02 , H01L43/12
摘要： A plasma etching method performs plasma etching on a sample, which has laminated films containing a variable layer of a magnetic film, a barrier layer of an insulating material, and a fixed layer of a magnetic film, using a hard mask, which includes at least one of a Ta film and a TiN film. The plasma etching method includes a first step of etching the laminated films using N2 gas; and a second step of etching the laminated films after the first step using mixed gas of N2 gas and gas containing carbon elements.
摘要翻译： 等离子体蚀刻方法使用硬掩模对具有包含磁性膜的可变层，绝缘材料的阻挡层和磁性膜的固定层的层叠膜的样品进行等离子体蚀刻，所述硬掩模至少包括 一个Ta膜和一个TiN膜。 等离子体蚀刻方法包括：使用N 2气蚀刻层叠膜的第一工序; 以及在第一步骤之后使用N 2气体和含有碳元素的气体的混合气体蚀刻层压膜的第二步骤。
-
公开(公告)号：US20150017741A1
公开(公告)日：2015-01-15
申请号：US14181537
申请日：2014-02-14
IPC分类号： H01L21/3065 , H01L43/12
摘要： In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.
摘要翻译： 在等离子体蚀刻等离子体蚀刻具有第一磁性膜的样品的等离子体蚀刻方法中，设置在第一磁性膜上方的第二磁性膜，设置在第一磁性膜和第二磁性膜之间的金属氧化物膜，设置第二金属膜 在所述第二磁性膜上形成上部电极，以及设置在所述第一磁性膜的下方并形成下部电极的第一金属膜，所述等离子体蚀刻方法包括以下步骤：蚀刻所述第一磁性膜，所述金属氧化物 薄膜和第二磁性薄膜通过使用一氧化碳气体; 以及在第一工序之后通过使用氢气和惰性气体的混合气体来蚀刻样品的第二工序。 在这种情况下，第一金属膜是其中含有钽的膜。
-
公开(公告)号：US09097754B2
公开(公告)日：2015-08-04
申请号：US13748665
申请日：2013-01-24
发明人： Makoto Satake , Jun Hayakawa , Tsutomu Tetsuka , Takeshi Shimada , Naohiro Yamamoto , Atsushi Yoshida
IPC分类号： B44C1/22 , H01L21/302 , H01L21/461 , G01R33/09 , H01L21/311 , H01J37/32 , H01L43/12 , H01L21/3065 , G11B5/31 , B82Y25/00 , H01F41/30
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/09 , G11B5/3116 , G11C11/161 , H01F41/307 , H01F41/308 , H01J37/32192 , H01J37/32229 , H01L21/3065 , H01L21/31138 , H01L43/12
摘要： The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element.
摘要翻译： 本发明提供一种制造具有高绝缘层与自由层的选择比的磁阻元件的方法。 制造磁阻元件的方法包括以下步骤：准备（左图，中间图）其上设置有自由层的基板，设置在第一磁性层下的固定层，以及设置在自由层之间的绝缘层的阻挡层 层和固定层，并且通过等离子体蚀刻处理（右图）自由层，其中构成阻挡层的绝缘层包含Ta元素或Ti元素。
-
-
-
-
-
-
-
-
-
搜索结果
12 条记录 (耗时 0.018 秒)
