-
公开(公告)号：US09064839B2
公开(公告)日：2015-06-23
申请号：US13470412
申请日：2012-05-14
IPC分类号： H01L29/76 , H01L29/74 , H01L29/36 , H01L29/66 , H01L29/739 , H01L29/861 , H01L29/08 , H01L29/10 , H01L29/16
CPC分类号： H01L29/66348 , H01L21/265 , H01L29/0615 , H01L29/0834 , H01L29/1095 , H01L29/1608 , H01L29/36 , H01L29/7397 , H01L29/8611
摘要： In an IGBT, defects generated by ion implantation for introduction of the P-type collector region or N-type buffer region into the N−-type drift region near the N-type buffer region remain to improve the switching speed, however the leak current increases by bringing a depletion layer into contact with the crystal defects at the off time. To avoid this, an IGBT is provided which includes an N-type buffer region having a higher concentration than that of an N−-type drift region and being in contact with a P-type on its backside, and a defect remaining region provided near the boundary between the N-type buffer region and the N−-type drift region. The N−-type drift region located on the front surface side with respect to the defect remaining region is provided with an N-type field stopping region having a higher concentration than that of the N−-type drift region.
摘要翻译： 在IGBT中，通过离子注入产生的缺陷将导致P型集电极区域或N型缓冲区域导入N型缓冲区域附近的N型漂移区域中，从而提高开关速度，但是漏电流 通过使耗尽层在关闭时与晶体缺陷接触而增加。 为了避免这种情况，提供了一种IGBT，其包括具有比N型漂移区的浓度高的N型缓冲区，并且在其背面与P型接触，并且在靠近 N型缓冲区和N型漂移区之间的边界。 相对于缺陷剩余区域位于前表面侧的N型漂移区设置有具有比N型漂移区的浓度高的N型场停止区。
-
公开(公告)号：US20070087501A1
公开(公告)日：2007-04-19
申请号：US11636520
申请日：2006-12-11
IPC分类号： H01L21/8242 , H01L21/76 , H01L29/94 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L29/66242 , B29C45/12 , B29C45/32 , H01L29/0821 , H01L29/1004 , H01L29/42304 , H01L29/7378
摘要： A sidewall-insulation film 9 is provided on a side surface of a first opening portion 8a formed in a base extraction electrode 5B of a hetero-junction bipolar transistor, and a portion of the sidewall-insulation film 9 extends so as to protrude from a surface opposite to a semiconductor substrate 1 toward a main surface of the semiconductor substrate 1 in the base extraction electrode 5B, and protruded length thereof is set to be equal to or smaller than one half of thickness of the insulation film 4 interposed between the main surface of the semiconductor substrate 1 and a lower surface of the base extraction electrode 5B.
摘要翻译： 侧壁绝缘膜9设置在形成在异质结双极晶体管的基极引出电极5B中的第一开口部分8a的侧表面上，并且侧壁绝缘膜9的一部分延伸以突出 从与半导体衬底1相对的表面朝向基极引出电极5B中的半导体衬底1的主表面，并且其突出长度被设置为等于或小于插入在绝缘膜4之间的绝缘膜4的厚度的一半 半导体衬底1的主表面和基极引出电极5B的下表面。
-
公开(公告)号：US07151035B2
公开(公告)日：2006-12-19
申请号：US10511541
申请日：2002-04-16
IPC分类号： H01L21/331
CPC分类号： H01L29/66242 , B29C45/12 , B29C45/32 , H01L29/0821 , H01L29/1004 , H01L29/42304 , H01L29/7378
摘要： A sidewall-insulation film 9 is provided on a side surface of a first opening portion 8a formed in a base extraction electrode 5B of a hetero-junction bipolar transistor, and a portion of the sidewall-insulation film 9 extends so as to protrude from a surface opposite to a semiconductor substrate 1 toward a main surface of the semiconductor substrate 1 in the base extraction electrode 5B, and protruded length thereof is set to be equal to or smaller than one half of thickness of the insulation film 4 interposed between the main surface of the semiconductor substrate 1 and a lower surface of the base extraction electrode 5B.
摘要翻译： 侧壁绝缘膜9设置在形成在异质结双极晶体管的基极引出电极5B中的第一开口部分8a的侧表面上，并且侧壁绝缘膜9的一部分延伸以突出 从与半导体衬底1相对的表面朝向基极引出电极5B中的半导体衬底1的主表面，并且其突出长度被设置为等于或小于插入在绝缘膜4之间的绝缘膜4的厚度的一半 半导体衬底1的主表面和基极引出电极5B的下表面。
-
公开(公告)号：US20050181569A1
公开(公告)日：2005-08-18
申请号：US10511541
申请日：2002-04-16
IPC分类号： B29C45/12 , B29C45/32 , H01L21/331 , H01L29/08 , H01L29/72 , H01L29/737 , H01L29/732 , H01L21/8222 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/66242 , B29C45/12 , B29C45/32 , H01L29/0821 , H01L29/1004 , H01L29/42304 , H01L29/7378
摘要： A sidewall-insulation film 9 is provided on a side surface of a first opening portion 8a formed in a base extraction electrode 5B of a hetero-junction bipolar transistor, and a portion of the sidewall-insulation film 9 extends so as to protrude from a surface opposite to a semiconductor substrate 1 toward a main surface of the semiconductor substrate 1 in the base extraction electrode 5B, and protruded length thereof is set to be equal to or smaller than one half of thickness of the insulation film 4 interposed between the main surface of the semiconductor substrate 1 and a lower surface of the base extraction electrode 5B.
摘要翻译： 侧壁绝缘膜9设置在形成在异质结双极晶体管的基极引出电极5B中的第一开口部分8a的侧表面上，并且侧壁绝缘膜9的一部分延伸以突出 从与半导体衬底1相对的表面朝向基极引出电极5B中的半导体衬底1的主表面，并且其突出长度被设置为等于或小于插入在绝缘膜4之间的绝缘膜4的厚度的一半 半导体衬底1的主表面和基极引出电极5B的下表面。
-
公开(公告)号：US20130087828A1
公开(公告)日：2013-04-11
申请号：US13805252
申请日：2010-06-21
申请人： Makoto Koshimizu , Hideki Niwayama , Kazuyuki Umezu , Hiroki Soeda , Atsushi Tachigami , Takeshi Iijima
发明人： Makoto Koshimizu , Hideki Niwayama , Kazuyuki Umezu , Hiroki Soeda , Atsushi Tachigami , Takeshi Iijima
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L29/0649 , H01L21/76205 , H01L21/76224 , H01L21/82385 , H01L21/823857 , H01L21/823878 , H01L27/0922 , H01L29/0638 , H01L29/0653 , H01L29/0661 , H01L29/0696 , H01L29/086 , H01L29/0878 , H01L29/1083 , H01L29/41758 , H01L29/42368 , H01L29/4238 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/66659 , H01L29/66689 , H01L29/7816 , H01L29/7835
摘要： A terrace insulating film (SL) to be overridden by a gate electrode (G) of an nLDMOS device is configured by LOCOS, and a device isolation portion (SS) is configured by STI. Furthermore, on an outermost periphery of an active region where a plurality of nLDMOS devices are formed, a guard ring having the same potential as that of a drain region (D) is provided. And, via this guard ring, the device isolation portion (SS) is formed in a periphery of the active region, thereby not connecting but isolating the terrace insulating film (SL) and the device isolation portion (SS) from each other.
摘要翻译： 要由nLDMOS器件的栅电极（G）覆盖的平台绝缘膜（SL）由LOCOS构成，器件隔离部分（SS）由STI构成。 此外，在形成有多个nLDMOS器件的有源区的最外周设置有与漏区（D）具有相同电位的保护环。 并且，通过该保护环，在有源区域的周围形成有器件隔离部（SS），由此不使绝缘膜（SL）与器件隔离部（SS）隔离。
-
-
-
-
搜索结果
5 条记录 (耗时 0.023 秒)
