摘要:
A liquid crystal display includes a first substrate and a second substrate which face each other and each include a display area and a peripheral area, a liquid crystal layer in the display areas and between the first substrate and the second substrate, and a conductive sealant combining the first substrate and the second substrate. The first substrate includes a common electrode in the display and peripheral areas of the first substrate. The second substrate includes a first and signal lines in the peripheral area of the second substrate, a first insulating layer on the first signal line and the second signal line, and a conductor on the first insulating layer in the peripheral area and connected to the first signal line through a contact hole. The common electrode includes a cutout corresponding to the conductor, and the cutout is at a corner of the display areas.
摘要:
A liquid crystal display (LCD) is provided. The LCD includes at least one light source which provides light, a display panel which includes pixels reflecting the light from the light source, and at least one light guide plate (LGP) which is formed substantially parallel to a surface of the display panel and is separated from the display panel, wherein a predetermined space is defined between the LGP and the display panel, and the LGP guides the light emitted from the light source to the pixels and allows the light reflected by the pixels to pass through the LGP.
摘要:
A liquid crystal display (LCD) is provided. The LCD includes at least one light source which provides light, a display panel which includes pixels reflecting the light from the light source, and at least one light guide plate (LGP) which is formed substantially parallel to a surface of the display panel and is separated from the display panel, wherein a predetermined space is defined between the LGP and the display panel, and the LGP guides the light emitted from the light source to the pixels and allows the light reflected by the pixels to pass through the LGP.
摘要:
A wireless network system and method to secure Quality of Service (QoS) according to a type of Wireless Local Area Network (WLAN) service in a WLAN communication system based on IEEE 802.11 includes: an authentication server adapted to set a priority for an access category of a wireless network service requested by a user to perform an authentication procedure in response to a user terminal requesting authentication for access to a wireless network; and an Access Point (AP) adapted to receive and store access category information of the user terminal authenticated by the authentication server and to compare access category information contained in a packet received from the user terminal to the previously stored access category information of the user terminal to control access to the wireless network.
摘要:
A method and apparatus for amplifying the optical signals of a C-band (1550 nm wavelength band) and a L-band (1580 nm wavelength band) in a wide-band optical fiber amplifier, wherein the incoming optical signals are separated into the 1550 nm wavelength band and the 1580 nm wavelength band by a WVDM optical coupler and respectively amplified by a C-band EDFA and a L-band EDFA A backward ASE generated by the C-band EDFA is fed back to the L-band EDFA by a circulator as a supplementary pumping light to the amplification of the optical signals of the 1580 nm wavelength band.
摘要:
A L-band(long-band) optical fiber amplifier is provided. The L-band optical fiber amplifier includes an optical fiber doped with a rare-earth element, at least one pumping light source for emitting pumping light to the optical fiber, a seed beam source for emitting a seed beam at a predetermined wavelength band, and a seed beam coupler disposed between an input terminal and the optical fiber, for coupling an input optical signal with the seed beam and feeding the coupled light forward to the optical fiber. By use of the seed beam, the L-band optical fiber amplifier improves gain flatness characteristics at wavelengths of an optical signal and increases amplification efficiency when the length of the optical fiber and the intensities of the optical signal and the pumping light are changed.
摘要:
Disclosed is an electromagnetic wave EMI/RFI shielding resin composite material that includes a thermoplastic polymer resin, an electrically conductive filler having a polyhedral shape or being capable of forming a polyhedral shape, and a low-melting point metal, and a molded product made using the EMI/RFI shielding resin composite material.
摘要:
A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.
摘要:
A method of manufacturing a phase-change random access memory device includes forming an interlayer insulating film on a semiconductor substrate, on which a bottom structure is formed, and patterning the interlayer insulating film to form a contact hole, forming a spacer on the side wall of the contact hole; forming a dielectric layer in the contact hole, and removing the spacer to form a bottom electrode contact hole. Therefore, the contact area between the bottom electrode contact and the phase-change material layer can be minimized.
摘要:
A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.