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    Nonvolatile logic circuit, integrated circuit including the nonvolatile logic circuit, and method of operating the integrated circuit
    1.
    发明授权
    Nonvolatile logic circuit, integrated circuit including the nonvolatile logic circuit, and method of operating the integrated circuit 有权
    非易失性逻辑电路，包括非易失性逻辑电路的集成电路和操作集成电路的方法

    公开(公告)号：US08509004B2

    公开(公告)日：2013-08-13

    申请号：US12801502

    申请日：2010-06-11

    申请人： Ho-jung Kim ,  Jai-kwang Shin ,  Kwang-seok Kim ,  Kee-won Kim

    发明人： Ho-jung Kim ,  Jai-kwang Shin ,  Kwang-seok Kim ,  Kee-won Kim

    IPC分类号： G11C7/10

    CPC分类号： H03K19/1733 ,  G11C14/0054 ,  G11C14/0081 ,  G11C14/009 ,  H03K3/356008

    摘要： A nonvolatile logic circuit includes a latch unit including a pair of first and second latch nodes; and a pair of first and second nonvolatile memory cells electrically connected to the first and second of latch nodes, respectively. A write operation is performed on the first and second nonvolatile memory cells according to a direction of a current flowing through the first and second nonvolatile memory cells when a write enable signal is activated. The direction of flow of current determined based on data on the respective first and second latch nodes, and a logic value written on the first nonvolatile memory cells is different from a logic value written on the second nonvolatile memory cell.

    摘要翻译： 非易失性逻辑电路包括：锁存单元，包括一对第一和第二锁存节点; 以及分别电连接到第一和第二锁存节点的一对第一和第二非易失性存储单元。 当写入使能信号被激活时，根据流过第一和第二非易失性存储器单元的电流的方向在第一和第二非易失性存储器单元上执行写入操作。 基于相应的第一和第二锁存节点上的数据确定的电流的流动方向和写在第一非易失性存储器单元上的逻辑值与写入第二非易失性存储单元的逻辑值不同。

    Nonvolatile logic circuit, integrated circuit including the nonvolatile logic circuit, and method of operating the integrated circuit
    2.
    发明申请
    Nonvolatile logic circuit, integrated circuit including the nonvolatile logic circuit, and method of operating the integrated circuit 有权
    非易失性逻辑电路，包括非易失性逻辑电路的集成电路和操作集成电路的方法

    公开(公告)号：US20110122709A1

    公开(公告)日：2011-05-26

    申请号：US12801502

    申请日：2010-06-11

    申请人： Ho-jung Kim ,  Jai-kwang Shin ,  Kwang-seok Kim ,  Kee-won Kim

    发明人： Ho-jung Kim ,  Jai-kwang Shin ,  Kwang-seok Kim ,  Kee-won Kim

    IPC分类号： G11C7/10 ,  H03K19/173

    CPC分类号： H03K19/1733 ,  G11C14/0054 ,  G11C14/0081 ,  G11C14/009 ,  H03K3/356008

    摘要： A nonvolatile logic circuit includes a latch unit including a pair of first and second latch nodes; and a pair of first and second nonvolatile memory cells electrically connected to the first and second of latch nodes, respectively. A write operation is performed on the first and second nonvolatile memory cells according to a direction of a current flowing through the first and second nonvolatile memory cells when a write enable signal is activated. The direction of flow of current determined based on data on the respective first and second latch nodes, and a logic value written on the first nonvolatile memory cells is different from a logic value written on the second nonvolatile memory cell.

    摘要翻译： 非易失性逻辑电路包括：锁存单元，包括一对第一和第二锁存节点; 以及分别电连接到第一和第二锁存节点的一对第一和第二非易失性存储单元。 当写入使能信号被激活时，根据流过第一和第二非易失性存储器单元的电流的方向在第一和第二非易失性存储器单元上执行写入操作。 基于相应的第一和第二锁存节点上的数据确定的电流的流动方向和写在第一非易失性存储器单元上的逻辑值与写入第二非易失性存储单元的逻辑值不同。

    Oscillators and method of operating the same
    5.
    发明申请
    Oscillators and method of operating the same 审中-公开
    振荡器和操作方法相同

    公开(公告)号：US20120038428A1

    公开(公告)日：2012-02-16

    申请号：US12929388

    申请日：2011-01-20

    申请人： Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim ,  Ho-jung Kim ,  Hyun-sik Choi

    发明人： Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim ,  Ho-jung Kim ,  Hyun-sik Choi

    IPC分类号： H03B5/02

    CPC分类号： H03B15/006

    摘要： Oscillators and a method of operating the same are provided, the oscillators include at least one oscillation device including a first magnetic layer having a magnetization direction that is variable, a second magnetic layer having a pinned magnetization direction, and a non-magnetic layer disposed between the first magnetic layer and the second magnetic layer. The oscillation device is configured to generate a signal having a set frequency. The oscillators further include a driving transistor having a drain connected to the at least one oscillation device, and a gate to which a control signal for controlling driving of the oscillation device is applied.

    摘要翻译： 提供了振荡器及其操作方法，所述振荡器包括至少一个振荡器件，该振荡器件包括具有可变磁化方向的第一磁性层，具有钉扎​​磁化方向的第二磁性层和设置在第二磁性层之间的非磁性层 第一磁性层和第二磁性层。 振荡装置被配置为产生具有设定频率的信号。 振荡器还包括具有连接到至少一个振荡装置的漏极的驱动晶体管，以及施加用于控制振荡装置的驱动的控制信号的栅极。

    Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the same
    7.
    发明授权
    Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the same 有权
    磁性随机存取存储器件，驱动方法和数据写入和读取方法相同

    公开(公告)号：US08218362B2

    公开(公告)日：2012-07-10

    申请号：US12385124

    申请日：2009-03-31

    申请人： In-jun Hwang ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    发明人： In-jun Hwang ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    IPC分类号： G11C11/14 ,  G11C11/416 ,  G11C29/82

    CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08

    摘要： A magnetic memory device includes a lower structure or an antiferromagnetic layer, a pinned layer, an information storage layer, and a free layer formed on the lower structure or the antiferromagnetic layer. In a method of operating a magnetic memory device, information from the storage information layer is read or stored after setting the magnetization of the free layer in a first magnetization direction. The information is stored when the first magnetization direction is opposite to a magnetization direction of the pinned layer, but is read when the first magnetization direction is the same as the magnetization direction of the pinned layer.

    摘要翻译： 磁存储器件包括下结构或反铁磁层，钉扎层，信息存储层和形成在下结构或反铁磁层上的自由层。 在操作磁存储器件的方法中，在将自由层的磁化设定为第一磁化方向之后，来自存储信息层的信息被读取或存储。 当第一磁化方向与被钉扎层的磁化方向相反时，存储信息，但是当第一磁化方向与被钉扎层的磁化方向相同时被读取。

    Oscillators and methods of operating the same
    10.
    发明授权
    Oscillators and methods of operating the same 有权
    振荡器和操作方法相同

    公开(公告)号：US08421545B2

    公开(公告)日：2013-04-16

    申请号：US13099684

    申请日：2011-05-03

    申请人： Kwang-seok Kim ,  Sung-chul Lee ,  Kee-won Kim ,  Sun-ae Seo ,  Ung-hwan Pi

    发明人： Kwang-seok Kim ,  Sung-chul Lee ,  Kee-won Kim ,  Sun-ae Seo ,  Ung-hwan Pi

    IPC分类号： H03L7/26 ,  H03B28/00 ,  H01L29/82

    CPC分类号： H03B15/006

    摘要： Oscillators and methods of operating the same, the oscillators include a pinned layer having a fixed magnetization direction, a first free layer over the pinned layer, and a second free layer over the first free layer. The oscillators are configured to generate a signal using precession of a magnetic moment of at least one of the first and second free layers.

    摘要翻译： 振荡器及其操作方法，振荡器包括具有固定磁化方向的钉扎层，被钉扎层上的第一自由层，以及在第一自由层上的第二自由层。 振荡器被配置为使用第一和第二自由层中的至少一个的磁矩的进动来产生信号。