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公开(公告)号：US07557386B2
公开(公告)日：2009-07-07
申请号：US11393542
申请日：2006-03-30
CPC分类号： H01L29/7397 , H01L29/0821 , H01L29/0834 , H01L29/0847 , H01L29/32
摘要： A reverse conducting insulated gate bipolar transistor (IGBT) includes a semiconductor substrate having a front side and a back side and a first conductivity region between the front and back sides. The first conductivity region includes a reduced lifetime zone, a first lifetime zone between the reduced lifetime zone and the front side, and an intermediate lifetime zone between the reduced lifetime zone and the back side. Charge carriers in the first lifetime zone have a first carrier lifetime, charge carriers in the reduced lifetime zone have a reduced carrier lifetime shorter than the first carrier lifetime, and charge carriers in the intermediate lifetime zone have an intermediate carrier lifetime shorter than the first carrier lifetime and longer than the reduced carrier lifetime.
摘要翻译： 反向导通绝缘栅双极晶体管（IGBT）包括具有前侧和后侧以及前侧和后侧之间的第一导电区的半导体衬底。 第一导电区域包括减小的寿命区域，减小的寿命区域和前侧之间的第一寿命区域以及减小的寿命区域和背面之间的中间寿命区域。 第一寿命区域中的电荷载体具有第一载流子寿命，减小寿命区中的电荷载流子具有比第一载流子寿命更短的载流子寿命，并且中间寿命区中的电荷载流子具有比第一载流子更短的中间载流子寿命 寿命长于载流子寿命缩短。
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公开(公告)号：US20070231973A1
公开(公告)日：2007-10-04
申请号：US11393542
申请日：2006-03-30
IPC分类号： H01L21/332
CPC分类号： H01L29/7397 , H01L29/0821 , H01L29/0834 , H01L29/0847 , H01L29/32
摘要： A reverse conducting insulated gate bipolar transistor (IGBT) includes a semiconductor substrate having a front side and a back side and a first conductivity region between the front and back sides. The first conductivity region includes a reduced lifetime zone, a first lifetime zone between the reduced lifetime zone and the front side, and an intermediate lifetime zone between the reduced lifetime zone and the back side. Charge carriers in the first lifetime zone have a first carrier lifetime, charge carriers in the reduced lifetime zone have a reduced carrier lifetime shorter than the first carrier lifetime, and charge carriers in the intermediate lifetime zone have an intermediate carrier lifetime shorter than the first carrier lifetime and longer than the reduced carrier lifetime.
摘要翻译： 反向导通绝缘栅双极晶体管（IGBT）包括具有前侧和后侧以及前侧和后侧之间的第一导电区的半导体衬底。 第一导电区域包括减小的寿命区域，减小的寿命区域和前侧之间的第一寿命区域以及减小的寿命区域和背面之间的中间寿命区域。 第一寿命区域中的电荷载体具有第一载流子寿命，减小寿命区中的电荷载流子具有比第一载流子寿命更短的载流子寿命，并且中间寿命区中的电荷载流子具有比第一载流子更短的中间载流子寿命 寿命长于载流子寿命缩短。
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公开(公告)号：US08344415B2
公开(公告)日：2013-01-01
申请号：US11924115
申请日：2007-10-25
IPC分类号： H01L29/739
CPC分类号： H01L29/0696 , H01L21/22 , H01L29/083 , H01L29/0834 , H01L29/36 , H01L29/7395 , H01L29/7397
摘要： A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell region is provided. The drift zone contains at least one region through which charge carriers flow in an operating mode of the semiconductor component in one polarity and charge carriers do not flow in an operating mode of the semiconductor component in an opposite polarity.
摘要翻译： 公开了半导体部件。 一个实施例提供一种半导体本体，其具有在后侧具有至少一个第一导电类型区域和至少一个第二导电类型区域的单元区域。 提供了单元区域中第一导电类型的漂移区。 漂移区包含至少一个区域，电荷载体在半导体组件的工作模式中以一个极性流动，并且电荷载体不以相反极性的半导体组件的工作模式流动。
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公开(公告)号：US20080135871A1
公开(公告)日：2008-06-12
申请号：US11924115
申请日：2007-10-25
IPC分类号： H01L29/739 , H01L21/331
CPC分类号： H01L29/0696 , H01L21/22 , H01L29/083 , H01L29/0834 , H01L29/36 , H01L29/7395 , H01L29/7397
摘要： A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell region is provided. The drift zone contains at least one region through which charge carriers flow in an operating mode of the semiconductor component in one polarity and charge carriers do not flow in an operating mode of the semiconductor component in an opposite polarity.
摘要翻译： 公开了半导体部件。 一个实施例提供一种半导体本体，其具有在后侧具有至少一个第一导电类型区域和至少一个第二导电类型区域的单元区域。 提供了单元区域中第一导电类型的漂移区。 漂移区包含至少一个区域，电荷载体在半导体组件的工作模式中以一个极性流动，并且电荷载体不以相反极性的半导体组件的工作模式流动。
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公开(公告)号：US07932583B2
公开(公告)日：2011-04-26
申请号：US12119751
申请日：2008-05-13
IPC分类号： H01L29/739 , H01L21/8222
CPC分类号： H01L29/7397 , H01L29/0834 , H01L29/1095 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device comprises a body of a first conductivity type having a source region and a channel, the body being in contact with a top contact layer. The device also comprises a gate arranged adjacent the channel and a drift zone of a second conductivity type arranged between the body and a bottom contact layer. An integrated diode is formed partially by a first zone of the first conductivity type within the body and being in contact with the top contact layer and a second zone of the second conductivity type being in contact with the bottom contact layer. A reduced charge carrier concentration region is formed in the drift zone having a continuously increasing charge carrier lifetime in the vertical direction so that the charge carrier lifetime is lowest near the body and highest near the bottom contact layer.
摘要翻译： 根据一个实施例，半导体器件包括具有源极区和沟道的第一导电类型的本体，该主体与顶部接触层接触。 该装置还包括布置在通道附近的栅极和布置在主体和底部接触层之间的第二导电类型的漂移区。 集成二极管部分地由主体内的第一导电类型的第一区域形成并与顶部接触层接触，并且第二导电类型的第二区域与底部接触层接触。 在漂移区中形成还原电荷载流子浓度区域，其在垂直方向上具有不断增加的电荷载流子寿命，使得电荷载体寿命在身体附近最低，并且在底部接触层附近最高。
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公开(公告)号：US20100117117A1
公开(公告)日：2010-05-13
申请号：US12267793
申请日：2008-11-10
IPC分类号： H01L21/331 , H01L29/10
CPC分类号： H01L29/66348 , H01L27/0611 , H01L29/167 , H01L29/32 , H01L29/7397
摘要： According to one embodiment, a power semiconductor device comprises a semiconductor substrate. A transistor gate structure is arranged in a trench formed in the semiconductor substrate. A body region of a first conductivity type is arranged adjacent the transistor gate structure and a first highly-doped region of a second conductivity type is arranged in an upper portion of the body region. A drift zone of the second conductivity type is arranged below the body region and a second highly-doped region of the second conductivity type is arranged below the drift zone. An end-of-range irradiation region is arranged adjacent the transistor gate structure and has a plurality of vacancies. In some embodiments, at least some of the vacancies are occupied by metals.
摘要翻译： 根据一个实施例，功率半导体器件包括半导体衬底。 晶体管栅极结构布置在形成在半导体衬底中的沟槽中。 第一导电类型的体区被布置为与晶体管栅极结构相邻，并且第二导电类型的第一高掺杂区域布置在身体区域的上部。 第二导电类型的漂移区布置在主体区域下方，并且第二导电类型的第二高掺杂区域布置在漂移区下方。 距离范围照射区域布置在晶体管栅极结构附近并且具有多个空位。 在一些实施例中，至少一些空位被金属占据。
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公开(公告)号：US20090283799A1
公开(公告)日：2009-11-19
申请号：US12119751
申请日：2008-05-13
IPC分类号： H01L29/739 , H01L21/331
CPC分类号： H01L29/7397 , H01L29/0834 , H01L29/1095 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device comprises a body of a first conductivity type having a source region and a channel, the body being in contact with a top contact layer. The device also comprises a gate arranged adjacent the channel and a drift zone of a second conductivity type arranged between the body and a bottom contact layer. An integrated diode is formed partially by a first zone of the first conductivity type within the body and being in contact with the top contact layer and a second zone of the second conductivity type being in contact with the bottom contact layer. A reduced charge carrier concentration region is formed in the drift zone having a continuously increasing charge carrier lifetime in the vertical direction so that the charge carrier lifetime is lowest near the body and highest near the bottom contact layer.
摘要翻译： 根据一个实施例，半导体器件包括具有源极区和沟道的第一导电类型的本体，该主体与顶部接触层接触。 该装置还包括布置在通道附近的栅极和布置在主体和底部接触层之间的第二导电类型的漂移区。 集成二极管部分地由主体内的第一导电类型的第一区域形成并与顶部接触层接触，并且第二导电类型的第二区域与底部接触层接触。 在漂移区中形成还原电荷载流子浓度区域，其在垂直方向上具有不断增加的电荷载流子寿命，使得电荷载体寿命在身体附近最低，并且在底部接触层附近最高。
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公开(公告)号：US07470952B2
公开(公告)日：2008-12-30
申请号：US11598243
申请日：2006-11-09
IPC分类号： H01L29/76
CPC分类号： H01L29/7396 , H01L29/0834 , H01L29/0847 , H01L29/0852 , H01L29/32
摘要： A power IGBT includes a semiconductor body having an emitter zone of a first conduction type and a drift zone of a second conduction type proximate to the emitter zone. The IGBT further includes a cell array, each transistor cell of the array having a source zone, a body zone disposed between the source zone and the drift zone, the body zone and source zone short-circuited, and a gate electrode configured to be insulated with respect to the source zone and the body zone. The cell array has a first cell array section with a first cell density and a second cell array section with a second cell density that is lower than the first cell density. The emitter zone has a lower emitter efficiency in a region corresponding to the second cell array section than in a region corresponding to the first cell array section.
摘要翻译： 功率IGBT包括具有第一导电类型的发射极区域和接近发射极区域的第二导电类型的漂移区域的半导体本体。 IGBT还包括单元阵列，阵列的每个晶体管单元具有源极区，设置在源极区和漂移区之间的体区，体区和源极区短路，以及被配置为绝缘的栅电极 相对于源区和身体区。 电池阵列具有具有第一电池密度的第一电池阵列部分和具有低于第一电池密度的第二电池密度的第二电池阵列部分。 发射极区在对应于第二单元阵列区的区域中比在与第一单元阵列区对应的区域中的发射极效率更低。
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公开(公告)号：US20070120181A1
公开(公告)日：2007-05-31
申请号：US11598243
申请日：2006-11-09
IPC分类号： H01L29/76
CPC分类号： H01L29/7396 , H01L29/0834 , H01L29/0847 , H01L29/0852 , H01L29/32
摘要： A power IGBT includes a semiconductor body having an emitter zone of a first conduction type and a drift zone of a second conduction type proximate to the emitter zone. The IGBT further includes a cell array, each transistor cell of the array having a source zone, a body zone disposed between the source zone and the drift zone, the body zone and source zone short-circuited, and a gate electrode configured to be insulated with respect to the source zone and the body zone. The cell array has a first cell array section with a first cell density and a second cell array section with a second cell density that is lower than the first cell density. The emitter zone has a lower emitter efficiency in a region corresponding to the second cell array section than in a region corresponding to the first cell array section.
摘要翻译： 功率IGBT包括具有第一导电类型的发射极区域和接近发射极区域的第二导电类型的漂移区域的半导体本体。 IGBT还包括单元阵列，阵列的每个晶体管单元具有源极区，设置在源极区和漂移区之间的体区，体区和源极区短路，以及被配置为绝缘的栅电极 相对于源区和身体区。 电池阵列具有具有第一电池密度的第一电池阵列部分和具有低于第一电池密度的第二电池密度的第二电池阵列部分。 发射极区在对应于第二单元阵列区的区域中比在与第一单元阵列区对应的区域中的发射极效率更低。
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公开(公告)号：US20090085103A1
公开(公告)日：2009-04-02
申请号：US11864238
申请日：2007-09-28
申请人： Frank Hille , Carsten Schaeffer , Frank Pfirsch , Holger Ruething
发明人： Frank Hille , Carsten Schaeffer , Frank Pfirsch , Holger Ruething
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0634 , H01L29/0834 , H01L29/1095 , H01L29/41766 , H01L29/4236 , H01L29/6634 , H01L29/66348 , H01L29/66727 , H01L29/66734 , H01L29/7396 , H01L29/7397 , H01L29/7805 , H01L29/7813
摘要： A semiconductor device and production method is disclosed. In one embodiment, the semiconductor device includes a first electrode and a second electrode, located on surfaces of a semiconductor body, and an insulated gate electrode. The semiconductor body has a contact groove for the first electrode in an intermediate oxide layer. Highly doped zones of a first conduction type are located in edge regions of the source connection zone. Below the highly doped zones of the first conduction type, there are highly doped zones of a body zone with a complementary conduction type. In a central region of the source connection zone, the body zone has a net charge carrier concentration with a complementary conduction type which is lower than the charge carrier concentration in the edge regions of the source connection zone.
摘要翻译： 公开了一种半导体器件和制造方法。 在一个实施例中，半导体器件包括位于半导体本体表面上的第一电极和第二电极以及绝缘栅电极。 半导体本体具有用于中间氧化物层中的第一电极的接触槽。 第一导电类型的高掺杂区域位于源极连接区域的边缘区域。 在第一导电类型的高掺杂区之下，存在具有互补导电类型的体区的高掺杂区。 在源极连接区域的中心区域，体区具有互补导电类型的净电荷载流子浓度，该互补导电类型低于源极连接区域的边缘区域中的载流子浓度。
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