公开(公告)号：US20080105933A1

公开(公告)日：2008-05-08

申请号：US11977079

申请日：2007-10-23

申请人： HongYu Yu ,  Shou-Zen Chang ,  Jorge Kittl ,  Anne Lauwers ,  Anabela Veloso

发明人： HongYu Yu ,  Shou-Zen Chang ,  Jorge Kittl ,  Anne Lauwers ,  Anabela Veloso

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L21/28052 ,  H01L21/28194 ,  H01L21/31155 ,  H01L21/32155 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/785

摘要： A semiconductor device is disclosed that comprises a fully silicided electrode formed of an alloy of a semiconductor material and a metal, a workfunction modulating element for modulating a workfunction of the alloy, and a dielectric in contact with the fully silicided electrode. At least a part of the dielectric which is in direct contact with the fully silicided electrode comprises a stopping material for substantially preventing the workfunction modulating element from implantation into and/or diffusing towards the dielectric. A method for forming such a semiconductor device is also disclosed.

摘要翻译： 公开了一种半导体器件，其包括由半导体材料和金属的合金形成的完全硅化电极，用于调节合金的功函数的功函数调制元件和与完全硅化物电极接触的电介质。 与完全硅化电极直接接触的电介质的至少一部分包括用于基本上防止功函数调制元件注入和/或扩散到电介质的止动材料。 还公开了一种用于形成这种半导体器件的方法。

公开(公告)号：US20080136030A1

公开(公告)日：2008-06-12

申请号：US11977027

申请日：2007-10-23

申请人： Shou-Zen Chang ,  Jorge Adrian Kittl ,  HongYu Yu ,  Anne Lauwers ,  Anabela Veloso

发明人： Shou-Zen Chang ,  Jorge Adrian Kittl ,  HongYu Yu ,  Anne Lauwers ,  Anabela Veloso

IPC分类号： H01L23/48 ,  H01L21/425

CPC分类号： H01L21/28097 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/2807 ,  H01L21/32155 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4975 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is provided comprising a main electrode (4) and a dielectric (3) in contact with the main electrode (4), the main electrode (4) comprising a material having a work function and a work function modulating element (6) for modulating the work function of the material of the main electrode (4) towards a predetermined value. The main electrode (4) furthermore comprises a diffusion preventing dopant element (5) for preventing diffusion of the work function modulating element (6) towards and/or into the dielectric (3). Methods for forming such a semiconductor device are also described.

摘要翻译： 提供一种半导体器件，包括与主电极（4）接触的主电极（4）和电介质（3），主电极（4）包括具有功函数的材料和功函数调制元件（6） 用于将主电极（4）的材料的功函数调节到预定值。 主电极（4）还包括用于防止功函数调制元件（6）向电介质（3）和/或电介质（3）扩散的防扩散掺杂剂元件（5）。 还描述了形成这种半导体器件的方法。

公开(公告)号：US07759748B2

公开(公告)日：2010-07-20

申请号：US11977079

申请日：2007-10-23

申请人： HongYu Yu ,  Shou-Zen Chang ,  Jorge Adrian Kittl ,  Anne Lauwers ,  Anabela Veloso

发明人： HongYu Yu ,  Shou-Zen Chang ,  Jorge Adrian Kittl ,  Anne Lauwers ,  Anabela Veloso

IPC分类号： H01L29/58

CPC分类号： H01L21/28052 ,  H01L21/28194 ,  H01L21/31155 ,  H01L21/32155 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/785

摘要： A semiconductor device is disclosed that comprises a fully silicided electrode formed of an alloy of a semiconductor material and a metal, a workfunction modulating element for modulating a workfunction of the alloy, and a dielectric in contact with the fully silicided electrode. At least a part of the dielectric which is in direct contact with the fully silicided electrode comprises a stopping material for substantially preventing the workfunction modulating element from implantation into and/or diffusing towards the dielectric. A method for forming such a semiconductor device is also disclosed.

摘要翻译： 公开了一种半导体器件，其包括由半导体材料和金属的合金形成的完全硅化电极，用于调节合金的功函数的功函数调制元件和与完全硅化物电极接触的电介质。 与完全硅化电极直接接触的电介质的至少一部分包括用于基本上防止功函数调制元件注入和/或扩散到电介质的止动材料。 还公开了一种用于形成这种半导体器件的方法。

公开(公告)号：US08313993B2

公开(公告)日：2012-11-20

申请号：US12358188

申请日：2009-01-22

申请人： Hag-Ju Cho ,  Anabela Veloso ,  HongYu Yu ,  Stefan Kubicek ,  Shou-Zen Chang

发明人： Hag-Ju Cho ,  Anabela Veloso ,  HongYu Yu ,  Stefan Kubicek ,  Shou-Zen Chang

IPC分类号： H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/823462 ,  H01L27/088 ,  H01L27/092 ,  H01L29/513

摘要： A dual work function semiconductor device and method for fabricating the same are disclosed. In one aspect, a device includes a first and second transistor on a first and second substrate region. The first and second transistors include a first gate stack having a first work function and a second gate stack having a second work function respectively. The first and second gate stack each include a host dielectric, a gate electrode comprising a metal layer, and a second dielectric capping layer therebetween. The second gate stack further has a first dielectric capping layer between the host dielectric and metal layer. The metal layer is selected to determine the first work function. The first dielectric capping layer is selected to determine the second work function.

摘要翻译： 公开了一种双功能半导体器件及其制造方法。 一方面，一种器件包括在第一和第二衬底区域上的第一和第二晶体管。 第一和第二晶体管包括分别具有第一功函数的第一栅极堆叠和具有第二功函数的第二栅极堆叠。 第一和第二栅极堆叠各自包括主电介质，包括金属层的栅电极和它们之间的第二电介质覆盖层。 第二栅极堆叠还在主介质和金属层之间具有第一介电覆盖层。 选择金属层以确定第一功函数。 选择第一介电覆盖层以确定第二功函数。

公开(公告)号：US20090184376A1

公开(公告)日：2009-07-23

申请号：US12358188

申请日：2009-01-22

申请人： Hag-Ju Cho ,  Anabela Veloso ,  HongYu Yu ,  Stefan Kubicek ,  Shou-Zen Chang

发明人： Hag-Ju Cho ,  Anabela Veloso ,  HongYu Yu ,  Stefan Kubicek ,  Shou-Zen Chang

IPC分类号： H01L27/092 ,  H01L21/28

CPC分类号： H01L21/823857 ,  H01L21/823462 ,  H01L27/088 ,  H01L27/092 ,  H01L29/513

摘要： A dual work function semiconductor device and method for fabricating the same are disclosed. In one aspect, a device includes a first and second transistor on a first and second substrate region. The first and second transistors include a first gate stack having a first work function and a second gate stack having a second work function respectively. The first and second gate stack each include a host dielectric, a gate electrode comprising a metal layer, and a second dielectric capping layer therebetween. The second gate stack further has a first dielectric capping layer between the host dielectric and metal layer. The metal layer is selected to determine the first work function. The first dielectric capping layer is selected to determine the second work function.

摘要翻译： 公开了一种双功能半导体器件及其制造方法。 一方面，一种器件包括在第一和第二衬底区域上的第一和第二晶体管。 第一和第二晶体管包括分别具有第一功函数的第一栅极堆叠和具有第二功函数的第二栅极堆叠。 第一和第二栅极堆叠各自包括主电介质，包括金属层的栅电极和它们之间的第二电介质覆盖层。 第二栅极堆叠还在主介质和金属层之间具有第一介电覆盖层。 选择金属层以确定第一功函数。 选择第一介电覆盖层以确定第二功函数。

公开(公告)号：US20090283835A1

公开(公告)日：2009-11-19

申请号：US12428341

申请日：2009-04-22

申请人： HongYu Yu ,  Shou-Zen Chang ,  Thomas Y. Hoffmann ,  Philippe Absil

发明人： HongYu Yu ,  Shou-Zen Chang ,  Thomas Y. Hoffmann ,  Philippe Absil

IPC分类号： H01L27/092 ,  H01L21/8234

CPC分类号： H01L21/268 ,  H01L21/28176 ,  H01L21/324 ,  H01L21/823857 ,  H01L29/49 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： A method for manufacturing a dual workfunction semiconductor device and the device made thereof are disclosed. In one aspect, the method includes manufacturing a first transistor in a first region and a second transistor in a second region of a substrate, the first transistor including a first gate stack, the first gate stack having a first gate dielectric capping layer and a first metal gate electrode layer. The second gate stack is similar to the first gate stack. The method includes applying a first thermal budget to the first gate dielectric capping layer and a second thermal budget to the second gate dielectric capping material to tune the workfunction of the first and second gate stack, the first thermal budget being smaller than the second thermal budget such that after the thermal treatment the first and the second gate stack have different work functions.

摘要翻译： 公开了制造双功能半导体器件的方法及其制造的器件。 在一个方面，所述方法包括在衬底的第二区域中制造第一区域中的第一晶体管和第二晶体管，所述第一晶体管包括第一栅极堆叠，所述第一栅极堆叠层具有第一栅极介电覆盖层和第一栅极电介质覆盖层 金属栅电极层。 第二个栅极堆叠类似于第一个栅极堆叠。 该方法包括将第一热预算应用于第一栅极电介质封盖层，以及将第二热预算应用于第二栅极电介质封盖材料以调节第一和第二栅极堆叠的功函数，第一热预算小于第二热预算 使得在热处理之后，第一和第二栅极堆叠具有不同的功函数。

公开(公告)号：US08012827B2

公开(公告)日：2011-09-06

申请号：US12428341

申请日：2009-04-22

申请人： HongYu Yu ,  Shou-Zen Chang ,  Thomas Y. Hoffmann ,  Philippe Absil

发明人： HongYu Yu ,  Shou-Zen Chang ,  Thomas Y. Hoffmann ,  Philippe Absil

IPC分类号： H01L27/092

CPC分类号： H01L21/268 ,  H01L21/28176 ,  H01L21/324 ,  H01L21/823857 ,  H01L29/49 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： A method for manufacturing a dual workfunction semiconductor device and the device made thereof are disclosed. In one aspect, the method includes manufacturing a first transistor in a first region and a second transistor in a second region of a substrate, the first transistor including a first gate stack, the first gate stack having a first gate dielectric capping layer and a first metal gate electrode layer. The second gate stack is similar to the first gate stack. The method includes applying a first thermal budget to the first gate dielectric capping layer and a second thermal budget to the second gate dielectric capping material to tune the workfunction of the first and second gate stack, the first thermal budget being smaller than the second thermal budget such that after the thermal treatment the first and the second gate stack have different work functions.

摘要翻译： 公开了制造双功能半导体器件的方法及其制造的器件。 在一个方面，所述方法包括在衬底的第二区域中制造第一区域中的第一晶体管和第二晶体管，所述第一晶体管包括第一栅极堆叠，所述第一栅极堆叠层具有第一栅极介电覆盖层和第一栅极电介质覆盖层 金属栅电极层。 第二个栅极堆叠类似于第一个栅极堆叠。 该方法包括将第一热预算应用于第一栅极电介质封盖层，以及将第二热预算应用于第二栅极电介质封盖材料以调节第一和第二栅极堆叠的功函数，第一热预算小于第二热预算 使得在热处理之后，第一和第二栅极堆叠具有不同的功函数。

公开(公告)号：US07989898B2

公开(公告)日：2011-08-02

申请号：US12428054

申请日：2009-04-22

申请人： Shou-Zen Chang ,  HongYu Yu

发明人： Shou-Zen Chang ,  HongYu Yu

IPC分类号： H01L27/088

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

摘要： A dual workfunction semiconductor device and a device made thereof is disclosed. In one aspect, the device includes a first gate stack in a first region and a second gate stack in a second region. The first gate stack has a first effective workfunction, and the second gate stack has a second effective workfunction different from the first effective workfunction. The first gate stack includes a first gate dielectric capping layer, a gate dielectric host layer, a first metal gate electrode layer, a barrier metal gate electrode, a second gate dielectric capping layer, and a second metal gate electrode. The second gate stack includes a gate dielectric host layer, a first metal gate electrode, a second gate dielectric capping layer, and a second metal gate electrode.

摘要翻译： 公开了一种双功能半导体器件及其制造的器件。 在一个方面，该器件包括在第一区域中的第一栅极堆叠和在第二区域中的第二栅极堆叠。 第一栅极堆叠具有第一有效功函数，并且第二栅极堆叠具有与第一有效功函数不同的第二有效功函数。 第一栅极堆叠包括第一栅极介电覆盖层，栅极电介质主体层，第一金属栅极电极层，势​​垒金属栅电极，第二栅极介电覆盖层和第二金属栅极电极。 第二栅极堆叠包括栅极电介质主体层，第一金属栅极电极，第二栅极介电覆盖层和第二金属栅电极。

公开(公告)号：US20090261424A1

公开(公告)日：2009-10-22

申请号：US12428054

申请日：2009-04-22

申请人： Shou-Zen Chang ,  HongYu Yu

发明人： Shou-Zen Chang ,  HongYu Yu

IPC分类号： H01L27/088 ,  H01L21/8236

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

摘要： A dual workfunction semiconductor device and a device made thereof is disclosed. In one aspect, the device includes a first gate stack in a first region and a second gate stack in a second region. The first gate stack has a first effective workfunction, and the second gate stack has a second effective workfunction different from the first effective workfunction. The first gate stack includes a first gate dielectric capping layer, a gate dielectric host layer, a first metal gate electrode layer, a barrier metal gate electrode, a second gate dielectric capping layer, and a second metal gate electrode. The second gate stack includes a gate dielectric host layer, a first metal gate electrode, a second gate dielectric capping layer, and a second metal gate electrode.

摘要翻译： 公开了一种双功能半导体器件及其制造的器件。 在一个方面，该器件包括在第一区域中的第一栅极堆叠和在第二区域中的第二栅极堆叠。 第一栅极堆叠具有第一有效功函数，并且第二栅极堆叠具有与第一有效功函数不同的第二有效功函数。 第一栅极堆叠包括第一栅极介电覆盖层，栅极电介质主体层，第一金属栅极电极层，势​​垒金属栅电极，第二栅极介电覆盖层和第二金属栅极电极。 第二栅极堆叠包括栅极电介质主体层，第一金属栅极电极，第二栅极介电覆盖层和第二金属栅电极。

公开(公告)号：US20090206417A1

公开(公告)日：2009-08-20

申请号：US12389315

申请日：2009-02-19

申请人： Shou-Zen Chang ,  HongYu Yu ,  Thomas Y. Hoffman

发明人： Shou-Zen Chang ,  HongYu Yu ,  Thomas Y. Hoffman

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823857 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

摘要： A method for manufacturing a dual work function semiconductor device is disclosed. In one aspect, a method starts by forming a host dielectric layer over a first and second region of a substrate. A first dielectric capping layer is formed overlying the host dielectric layer on the first and second region and later selectively removed to expose an underlying layer on the first region. A Hf-based dielectric capping layer is formed overlying the underlying layer on the first region and the first dielectric capping layer on the second region. The Hf-based dielectric capping layer is selected to have a healing effect on the exposed surface of the underlying layer on the first region. A control electrode is formed overlaying the Hf-based dielectric capping layer on the first region and on the second region.

摘要翻译： 公开了一种用于制造双功能半导体器件的方法。 在一个方面，一种方法通过在衬底的第一和第二区域上形成主电介质层开始。 形成第一介电覆盖层，覆盖第一和第二区域上的主介电层，然后选择性地去除以暴露第一区域上的下层。 形成Hf基电介质覆盖层，覆盖第一区域上的下层和第二区域上的第一介电覆盖层。 选择Hf基介电覆盖层以对第一区域上的下层的暴露表面具有愈合效果。 在第一区域和第二区域上形成覆盖Hf基电介质覆盖层的控制电极。